• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.161-162
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• 2012

• Journal of the Korean Magnetics Society
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• v.26 no.3
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• pp.76-80
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• 2016

CoSiB is the amorphous ferromagnetic material and multilayer consisting of CoSiB and Pd has perpendicular magnetic anisotropic property. PMA has strong advantages for STT-MRAM. Moreover, amorphous materials have two advantages more than crystalline materials: no grain boundary and good thermal stability. Therefore, we studied the magnetic properties of multilayers consisting of the $Co_{75}Si_{15}B_{10}$ with PMA. In this study, we investigated the magnetic property of the [CoSiB (3, 4, 5, and 6) ${\AA}$/Pd(11, 13, 15, 17, 19,and $24{\AA})]_5$ multilayers and found the annealing temperature dependence of the magnetic property. The annealing temperature range is from room temperature to $500^{\circ}C$. The coercivity and the saturation magnetization of the CoSiB/Pd multilayer system have a close association with the annealing temperature. Moreover, the coercivity especially shows a sudden increasing at the specific annealing temperature.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.182-183
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 1992.03a
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• pp.14-15
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• 1992

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.143-143
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• 1999

Co/Ti 다층 박막을 제조하기 위해 직류원 마그네트론 스퍼터링 시스템을 이용하여 (100)실리콘 단결정 기판위에 Co와 Ti층을 각각 2/2, 5/5, 10/10 nm 정도의 두께로 조절하여 세가지 조성의 Co/Ti 다층 박막을 제조하였다. 이러한 Co/Ti 다층 박막의 후속 열처리는 Ar 가스분위기 하에서 Tube furnace를 이용하여 20$0^{\circ}C$와 30$0^{\circ}C$, 40$0^{\circ}C$의 온도에서 진행하였다. 증착초기에서부터 후속 열처리 공정을 진행하는 동안, Co/Ti 다층 박막에서의 계면반응을 미세 구조 변화 및 전기, 자기적 특성변화와 연관지어 관찰하였다. Co/Ti 다층 박막의 결정 구조와 미세 구조 변화를 관찰하기 위해 각각 X-선 회절기와 투과 전자 현미경을 사용하였고, 다층 박막의 전기적, 자기적 특성 변화를 관찰하기 위해 각각 4점 탐침기, 진동 시료형 자속계를 이용하였다. Co/Ti 다층 박막을 20$0^{\circ}C$의 저온에서 열처리를 한 경우에는 증착 초기의 계면반응에 의해 형성된 비정질 층이 성장하였고, 30$0^{\circ}C$와 40$0^{\circ}C$의 고온에서 열처리를 하는 경우에는 비정질 측의 성장보다는 새로운 화합물 CoTi 결정상이 형성되면서 비정질상은 오히려 감소하였다. 즉, Co/Ti 다층 박막의 계면 반응은 결정질 Co와 Ti을 계면 반응물로 소모시키면서 비정질 층을 성장시키는 비정질화 반응이 활발히 일어났다. 특히, 소모된 계면 반응물로 소모시키면서 비정질 층을 성장시키는 비정질화 반응일 활발히 일어났다. 특히, 계면 반응물로 소모시키면서 비정질 층을 성장시키는 비정질화 반응일 활발히 일어났다. 특히, 소모된 계면 반응물 Co와 Ti 중에서 Ti의 소모속도가 더 빠르게 관찰되었다. 이로부터 Ti 이 증착초기에서 저온 열처리 과정동안 Co/Ti 다층 박막의 계면에서 일어나는 비정질화 반응의 주 확산자로 작용했다는 것을 알 수 있다. 한편, 30$0^{\circ}C$와 40$0^{\circ}C$의 고온에서 열처리한 Co/Ti 다층 박막의 계면 반응은, 비정질 반응에 의한 비정질층의 형성보다는 새로운 화합물 결정질 CoTi상을 형성시키는 결정화 반응이 우세했다. Co/Ti 다층 박막의 전기적 저항은, 열처리에 의한 비정질 층의 생성 및 성장으로 인해 증가하였고 새로운 저저항 CoTi 결정상의 형성으로 인해 감소하는 것을 알 수 있었다. 또한 Co/Ti 다층 박막의 포화 자화값은, 열처리에 의한 계면에서의 비정질화 반응과 CoTi 결정화 반응으로 인해 강자성체인 Co 결정상이 감소됨에 따라 감소하는 경향을 나타냈다.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.124-127
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• 2007

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.29-36
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• 1992

The fundamental research about the amorphous ferrite, which is expected as the important material for electronic and information imdustry in future, was carried out in this work. Because the ferromagnetic amorphous ferrites reported recently are very inferior in magnetic properties than the crystalline ferrites, the development of the more ferromagnetic amorphous ferrites is required. In order to obtain the fundamental data for the preparation of amorphous ferrites, the hand-made twin-roller quenching apparatus was used for rapid quenching. Investigation on amorphous ferrite in the system $CaO-Bi_{2}O_{3}-Fe_{2}O_{3}$ has been carried out in the composition of 10-50 mole% CaO, 10-50 mole% $Bi_{2}O_{3}$, 40-70 mole% $Fe_{2}O_{3}$. Large magnetization values were obtained near the composition of the mixture of $BiFeO_{3}$ and $CaFe_{4}O_{7}$. Especially, an amorphous ${(CaO)}_{20}{(Bi_{2}O_{3})_{15}{(Fe_{2}O_{3})}_{65}$ specimen has a magmetization value of about 21.84 emu/g at 0K(10 kOe). Fe $M\"{o}ssbauer$ absorption spectrum indicates that this specimen is compsed of two amorphous phases, antiferromagnetic phase($\alpha$-phase) and ferromagnetic phase($\beta$-phase). Crystallization of this amorphous ferrite was happened in steps-$550^{\circ}C$ and $775^{\circ}C$, then observed crystal phases were perovskite phase of $BiFeO_{3}$ and $Fe_{2}O_{3}$ phase.

• Journal of the Korean Magnetics Society
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• v.23 no.4
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• pp.122-125
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• 2013

Perpendicular magnetic anisotropy (PMA) is the phenomenon of magnetic thin film which is preferentially magnetized in a direction perpendicular to the film's plane. Amorphous multilayer with PMA has been studied as the good candidate to realization of high density STT-MRAM (Spin Transfer Torque-Magnetic Random Access Memory). The current issue of high density STT-MRAM is a decrease in the switching current of the device and an application of amorphous materials which are most suitable devices. The amorphous ferromagnetic material has low saturated magnetization, low coercivity and high thermal stability. In this study, we presented amorphous ferromagnetic multilayer that consists of an amorphous alloy CoSiB and a nonmagnetic material Pd. We investigated the change of PMA of the $[CoSiB\;t_{CoSiB}/Pd\;1.3nm]_5$ multilayer ($t_{CoSiB}$ = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6 nm, and $t_{Pd}$ = 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6 nm) and $[CoSiB\;0.3nm/Pd\;1.3nm]_n$ multilayer (n = 3, 5, 7, 9, 11, 13). This multilayer is measured by VSM (Vibrating Sample Magnetometer) and analyzed magnetic properties like a coercivity ($H_c$) and a magnetization ($M_s$). The coercivity in the $[CoSiB\;t_{CoSiB}\;nm/Pd\;1.3nm]_5$ multi-layers increased with increasing $t_{CoSiB}$ to reach a maximum at $t_{CoSiB}$ = 0.3 nm and then decreased for $t_{CoSiB}$ > 0.3 nm. The lowest saturated magnetization of $0.26emu/cm^3$ was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_3$ multilayer whereas the highest coercivity of 0.26 kOe was obtained in the $[CoSiB\;0.3nm/Pd\;1.3nm]_5$ mutilayer. Additional Pd layers did not contribute to the perpendicular magnetic anisotropy. The single domain structure evolved in to a striped multi-domain structure as the bilayer repetition number n was increased above 7 after which (n > 7) the hysteresis loops had a bow-tie shapes.