• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.71-72
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• 2009

칼코게나이드(chalcogenide)계 비정질 반도체는 그들의 독특한 광학적, 전기적 특성 때문에 활발한 연구가 진행되고 있다. 비정질 Se는 유연한 원자구조로 인해 가장 먼저 광학적으로 상용화되었으며, 응용성이 매우 큰 반도체 재료중 하나로 Ge-Se와 같이 Se를 기본으로 한 칼코게나이드 유리 반도체가 주목받고 있다. 따라서 본 연구에서는 비정질 칼코게나이드 $Ge_xSe_{100-x}$(x=25,95) 조성에 대한 광학적 특성을 연구 하였다. 시료는 5N의 순도를 갖는 Ge, Se 물질을 준비하고 조성비에 맞추어서 석영관에 진공 봉입한 후 용융 혼합하여 $Ge_{25}Se_{75}$와 $Ge_{95}Se_5$조성의 두 가지 비정질 벌크를 제작하였다. 열증착 방법으로 유리 기판위에 박막을 제작하였고 UV-vis-NIR spectrophotometer를 사용하여 투과도를 측정하였다. 측정한 스펙트럼을 이용하여 Swanpoel method로 굴절률을 계산하고 특성을 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.141-142
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• 2008

다결정 실리콘 박막 트랜지스터를 만들기 위해 가장 많이 사용되는 제작방법은 비정질 실리콘을 기판에 형성한 뒤 결정화 시키는 방법이다. 고온에서 장시간 열처리하는 고상 결정화(SPC)와 레이저를 이용한 결정화(ELA)가 자주 사용되어진다. 그러나 SPC의 경우는 고온에서 장시간 열처리하기 때문에 유리 기판이 변형될 수 있고 ELA의 경우 장비가격이 비싸고 표면일 불균일하다는 문제점이 있다. 본 연구에서는 이 문제를 해결하기 위해서 화학 기상 증착법(저온 공정)을 이용하여 비정질 실리콘 박막을 증착 시키고, 이를 금속 촉매를 이용하여 금속 유도 결정화 방법(MIC)으로 결정화 시키는 공정을 이용하였다. 유리 기판 상부에 버퍼 층을 형성한 후 플라즈마 화학 기상 증착법(PECVD)을 이용하여 비정질 실리콘을 증착하고 Ni-solution을 이용하여 얇게 Ni 코팅하고 그 시료를 약 $650^{\circ}C$의 Rapid Thermal Annealing(RTA) 공정을 이용하여 비정질 실리콘을 다결정 실리콘으로 결정화 시키는 연구를 진행하였다. Ni 코팅시간은 20분, RTA 공정은 5시간의 진행시간을 거쳐야 최적의 결정화 정도를 만들어낸다.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.109-113
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• 1997

When the intensity of X-rays scattered from amorphous materials (very weakly absorbing materials) is measured using standard diffractometric technique, the intensity caused by multiple scattering is obtained in the measured X-ray intensity. Computer programs have been developed to estimate the intensity of the mul-tiple scattering obtained in vitreous SiO2 and B2O3 with various X-rays. Using the above computer program, the intensity ratios of multiple scattering to single scattering in vitreous SiO2 were 0.10~0.16% at CuK$\alpha$, 0.98~5.87% at MoK$\alpha$, and 1.88~17.86% at AgK$\alpha$ in the range of 2$\theta$=0~180$^{\circ}$. Therefore, pri-or to the structural analysis of vitreous SiO2 and B2O3 performed experimentally using X-ray diffractometric technique, the intensity data measured in MoK$\alpha$ and AgK$\alpha$ radiations must be corrected for multiple scattering effect.

• Korean Journal of Optics and Photonics
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• v.7 no.2
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• pp.129-135
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• 1996

We observed the absorptive optical bistability in the single layer amorphous $As_2S_3$ thin film which has an isolated electron pairs at roomtemperature, for the frist time, $Ar^+$ laser beam (λ=514.5 nm) was used as a light source and was focused by thin lens. The experiment was performed in cavityless system and the occurrence of optical bistability in this material could be explained by the temperature-dependent absorption coefficient of the sample. Also, this effect was explained by the reversible shift of the absorption edge in this material. The condition of optical bistability is determined by detuning value ($a_0L$) and this value was 0.12 when thikness of that sample was about 0.8 ${\mu}{\textrm}{m}$. The switching was observed clealy when light intensity is 150~180 mW and the swiching time was about $10^{-4}$ s.

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.293-297
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• 1992

The magnetic properties of the amorphous Fe/sub 32/Ni/sub 36/Cr/sub 14/P/sub 12/B/sub 6/ has been studied by Mossbauer spectroscopy in the temperature range of 88-400K. The analysis of the spectrum of B8K, the magnetic hyperfine field and quadrupole splitting are found to be 140.5kOe and almost zero, which means that the magnetic hyperfine field is randomly oriented with respect to the principal axes of the electric field gradient, respectively. The values of quadrupole splitting in paramagnetic phase with Tc=280K are independent on the changes of temperature. Debye temperature is found to be about 288k from the analysis of recoilless fraction.

• Journal of Korean Ophthalmic Optics Society
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• v.2 no.1
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• pp.103-110
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• 1997

This work presents experimental results on the electrical properties of hydrogenated amorphous carbon films(a-C : H) prepared by PECVD. Conductance of a-C: H was measured as a function of temperatures in the range of 100 to 423K. We studied two a -C: H films: one was well explanied by the Mott's variable range hopping(VRH) rule. But the other sample did not follow it. The conduction data of second sample were well fitted to Shimakawa's multi-phonon hopping(MPH) model according to which conductivity is proportional to Tm with m= 15~17. But, in our samples, m was 10~12.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.175-183
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• 1993

Amorphous Semicondyctor로서 Chalcogenide계의 Ge-Se-Bi계 비정질화와 결정화 실험을 통하여 전기전도도를 평가코자 하였다. 시료의 조성범위는 G $e_{15-25}$S $e_{65-85}$B $i_{2.5-15B}$의 범위에서 5N의 Ge, Se, Bi metal분말을 사용하였다. 시료는 석영관에 진공 장입후 용융시켜 비정질화 하였다. 이때 열처리 조건은 1000.deg.C에서 10시간 동안 가열하였으며 급냉 조건은 3834.deg.C/sec로 처리하였다. 비정질 sample의 결정화는 결정핵을 형성 시킨 후 온도 변화 및 시간의 변화를 주면서 결정을 성장시켰으며 이때 B $i_{2}$S $e_{3}$와 GeS $e_{2}$ 결정상을 관찰 할 수 있었다. 박막화는 위의 실험에 사용된 Bulk sample을 사용하여 박막을 제작하였으며 유리화 영역은 Ge 15 at%, Se 70 at% 이상, Bi가 10 at% 이하일 때 비정질화가 용이하였다. Bulk의 경우 Ge를 20 at%로 고정시 Bi의 at% 함량이 증가함에 따라 전기전도도가 증가했으며 Bi가 7.5 at%이상일때 급격한 전도도의 증가를 가져왔다. 박막의 경우엔 Bulk sample보다 Bi의 함량이 증가시 더욱 큰 전도도의 증가를 가져왔다. G $e_{20}$S $e_{77.5}$B $i_{2.5}$ 저성의 결정화 경우 330.deg.C에서 4hr 유지시킨 경우가 가장 양호하였다.다.하였다.다.

• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.55-59
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• 1991

The temperature-dependent magnetization curves of amorphous Fe-Co-(Nd, Sm, Gd, Tb)-B alloys were measured using a vibrating sample magnetometer from 77 K up to 900 K. The spin wave stiffness constants and the range of the exchange interaction were calculated from the saturation magnetization values at 0 K. Curie temperatures and the Bloch coefficients estimated from the saturation magnetization curves. The low temperature dependence of magnetization is in good agreement with Bloch relation, $M_{s}(T)=M_{s}(O)(1-BT^{3/2}-CT^{5/2})$. The spin wave stiffness constant and the range of exchange interaction are decreased by substitution of heavy rare earth (Tb, Gd).

• Journal of the Korean Magnetics Society
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• v.7 no.4
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• pp.180-185
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• 1997

Variations of core loss and coercivity with heat treatment condition have been studied in amorphous ribbon core specimens. All measurements were performed at 10 kHz with a maximum induction of 0.1 T. With increasing annealing time, both core loss and coercivity of core specimens decreased first, reaching minimum values, and increased thereafter. Specimen heat treated in an air showed better soft magnetic properties than those treated in Ar atmosphere. The specimens annealed under magnetic field higher than 6 Oe in radial direction showed reduced core loss and coercivity. The field annealing effects were increased with increasing cooling rate near Curie temperature of the material. The specimen annealed under an applied field in perpendicular direction of the core showed increased coercivity and decreased permeability.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.51-56
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• 2012

In the present study, we investigated the effect of mechanical alloying (MA) on the formation of amorphous VCo system through solid state reaction during ball milling. Two types of powder samples, ${\sigma}$-VCo intermetallic compound and $V_{50}Co_{50}$ powder mixture, were applied as a starting materials. With increasing milling time, a structural characteristics into the amorphous state is distinctly observed from the structural factor and radial distribution by X-ray diffraction. Amorphization has been observed in all two types of samples after the milling for 120 hrs. DSC spectrum of $V_{50}Co_{50}$ powder sample milled for 60 hrs indicates a sharp exothermic peak from the crystallization at $600^{\circ}C$. The structure factor, S(Q) and radial distribution function, RDF(r), observed by X-ray diffraction gradually change into a structure characteristic of an amorphous state with increasing MA time.