• KOREAN JOURNAL OF CROP SCIENCE
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• v.52 no.2
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• pp.162-168
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• 2007

Compatible and incompatible interactions of near-isogenic lines containing one of Xa1, Xa3, and Xa7 resistance genes with Japanese bacterial blight isolates (T7174, T7147, and T7133) were examined in order to determine the variation of bacterial blight resistance and the stability of resistance gene. IRBB 101 line having a Xal gene was compatible (host susceptible) with T7147 and T7133 isolates but incompatible (host resistant) with T7174 isolate at all the tested rice growth stages. IRBB 103 line having a Xa3 gene was susceptible or moderately resistant to the three isolates at seedling and maximum tillering stage but resistant at heading stage. IRBB 101 line having a Xa7 gene was semi-compatible with the three isolates at seedling stage but incompatible at the other growth stages. Overall there were clear differences between compatible and incompatible interactions of rice with Xanthomonas oryzae pv. oryzae races. In the mixed inoculations of compatible and incompatible isolates, the lesion length from near-isogenic lines decreased as the ratios of incompatible races increased. When the distinction between compatible and incompatible isolates was unclear, there was almost no variation of lesion length regardless of mixed ratios. The pathogenicity of the mixed races in the incompatible Interactions increased rather than the individual inoculation whereas the lesion length of compatible interactions was similar to that of the individual inoculation. These data indicate the incompatible races inhibit the virulence of a compatible race but compatible races increase the disease occurrence due to incompatible races. Furthermore, IRBB 107 line that showed resistance to all the isolates at all the tested growth stages was considered as a good parent f3r breeding of resistant variety.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.30.1-30.1
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• 2009

정보화가 급속히 진전됨에 따라 보다 많은 양의 정보를 전송, 처리, 저장하게 되면서 이를 위해 대용량, 고속, 비휘발성의 특징을 갖는 차세대 메모리의 개발이 절실히 요구되고있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 TiO2, Al2O3, NiO2, HfO2, ZrO2 등의 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Offstate)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time 이105 배 이상 빠르고, 5V 이하의 낮은 전압에서도 동작이 가능하다. 또한 구조가 간단하여 공정 단순화가 가능하고 소자의 집적화도 쉽다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 본연구에서는 DC-magnetron Sputtering 방법으로 전이금속 박막을 증착하고, Dry furnace로 산화시켜 전이금속산화물 박막을 제작한 후 저항변화 특성을 연구하였다. 두 개의 전이금속산화물 박막을 dual-layer로 형성시켜 저항변화특성을 관찰하였으며 또한, 전이금속산화물 박막의 조성을 달리 하여 저항변화를 관찰 하였다. 전이금속산화물 박막의 전기적 특성을 알아보기 위해 Si(100) wafer 위에 Pt를 이용 MIM 형태로 capacitor 시편을 제작 하여, probe station으로 I-V 측정을 하였고 조성 및 표면 분석을 위해서는 AES와 AFM을, 미세구조를 분석을 위해서는 TEM과 SEM 을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.96-98
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• 1999

유기전계발광소자(OELD)의 성능 향상을 위한 많은 연구가 진행되고 있지만 아직까지 금속전극과 유기발 광층 사이의 접촉저항(Contact Resistance)에 관한 연구는 거의 보고되지 않고 있다. Ohmic 접합에서 접촉 저항은 효율적이고 신뢰성 있는 소자제작에 있어서 간과되어서는 안될 매우 중요한 부분이다. 본 연구에서는 금속전극과 유기발광충 사이의 접촉저항에 관해서 논의하고자 한다. 본 연구에서 제작된 샘플은 금속전극으로 Ag, 유기발광재료로서 Alq$_3$를 사용하였으며, Alq3의 두께를 100 $\AA$에서 500 $\AA$까지 각각 다르게 하여 서로 다른 두께의 유기발광층을 가지는 샘플을 제작하였다. 금속전극의 매트릭스 구조에 의해 형성된 적선의 크기는 3 mm x 2 mm이며, 제작된 샘플의 접촉비저항은 TLM(Transmission Line Measurement) 방법을 이용하여 구하였다. Planar한 TLM model로부터 새로운 vertical model을 유추하였으며, 이를 근거로 접촉저항 및 transfer length 등을 계산하였다. 상온에서 측정된 전체 저항값은 유기발광층의 두께가 증가함 에 따라 증가하는 경향을 나타냈으며, 이 때 계산된 접촉비저항은 1.49$\times$$10^1$ $\Omega$-$\textrm{cm}^2$ 이다. 접촉저항은 전극 사이의 거리의 증가에 따라 증가하지만, 측정시간의 thermal budget의 영향으로 상대적으로 전체저항이 감 소하였으나, 저항감소분의 포화에 따라서, 거리에 비례하여 다시 저항이 증가하였다.

• 한국지구물리탐사학회:학술대회논문집
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• 2000.09a
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• pp.70-86
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• 2000

The primary objective of this study is to develope an investigating method to identify spatial variability of plumes and contaminants at contaminated sites. The electrical resistivity method was used to characterize contaminated sites. This technique is expected to use actively at contaminated sites in order to remedy the contaminated sites in the future. It was studied by appling electrical resistivity method into contaminated wastes disposal sites and verified that it was suitable method for the contaminated site characterization.

• Journal of the Korean Applied Science and Technology
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• v.37 no.3
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• pp.571-581
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• 2020

The purpose of this study was to investigate the effect of endurance and resistance exercise by using different intensity on diabetic-related blood profiles in impaired glucose tolerance mice. 54 C57BL/6 mice were divided into (1) Control group (CO, n=9), (2) impaired glucose tolerance group (IGT, n=9), (3) IGT + 50% of VO_2max endurance exercise group (IGT50A, n=9), (4) IGT + 75% of VO_2max endurance exercise group (IGT75A, n=9), (5) IGT +50% of 1RM resistance exercise group (IGT50R, n=9), 그리고 (6) IGT + 75% of 1RM resistance exercise group (IGT75R, n=9). Endurance exercise program was performed 40 min/day, 5 days a week for 8 weeks on treadmill. Resistance exercise program was consisted in ladder-climbing 8 set/day, 5 days a week for 8 weeks. After completed the exercise program, there was no different insulin level in the groups. The fasting glucose was significantly lower in CO than in other groups, and it was not different among the exercised groups. However, IGT75R was statistically lower than IGT. HOMA-IR was only different between CO and IGT. HbA1c was higher in IGT than in other groups. As compared with exercised groups, IGT 75A was lower than IGT50R. TC was lower in CO than in other groups, but there was no different in TG. Endurance exercise groups showed higher than CO and IGT in HDL-C level. LDL-C was lower in CO than other groups. In addition, IGT75A was lower than IGT and IGT50R in LDL-C level. In conclusion, 75% of 1RM resistance exercise had more positive effect on fasting glucose, and 75% of VO_2max endurance exercise improved HbA1c and LDL-C level. In addition, endurance exercise had more effective in HDL-C improvement as compared with resistance exercise.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.433-438
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• 1993

전자의 파동성에 기인하는 여러 가지 양자간섭 현상을 연구하기 위하여, 금속의 미세고리구조을 제작하였다. 전자의 양자간섭과 가간섭 역충돌 효과에 의한 자기저항의 진동형상이 관측되었으며, 자기저항의 비주기 섭동 현상과 비국재현상도 관찰되어 중시적 전기 전도도의 일반식에 의하여 설명되었다. 또한 AlGaAs/GaAs 의 이차원 전자가스총을 이용한 고리구조도 제작되어, 양자 효과와 탄동적 수송의 영역에서 자기저항이 측정되었다.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.544-545
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• 2012

본 논문에서는 3상 4선식 UPS 인버터에 대한 저항성 수하 제어 방식 병렬운전 알고리즘을 제안하고, PSIM 시뮬레이션을 통해서 제안된 병렬운전 알고리즘과 강인 전압제어기를 적용한 2병렬 UPS 인버터의 운전 결과를 제시한다. 3상 UPS 인버터 2대로 병렬운전 환경을 구축하였고, 주파수-전압 강하 방식의 저항성 수하 제어를 이용하여 저항 부하, 유도성 부하, 비선형 부하에 대한 전력분담을 확인하였다.

• Geophysics and Geophysical Exploration
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• v.10 no.3
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• pp.211-218
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• 2007

In this study, vertical electrical sounding (VES) data and ordinary kriging are used to identify the alluvial depth of each area that Korea Resources Corporation (KORES) conducted groundwater survey at Miryang area in Gyeongsangnam-do and Pocheon area in Gyeonggi-do from 2003 to 2004. To verify the applicability of VES data to ordianry kriging, regression analysis of VES data versus drillhole data is conducted. Comparing the alluvial depth distributions using ordinary kriging with existing drillhole data, the result shows that the depth distributions are reasonably depicted along with the topography and the basin. So, the ordinary kriging of VES data is useful to identify the alluvial depth distributions.

• Geophysics and Geophysical Exploration
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• v.13 no.2
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• pp.175-180
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• 2010

The small loop electromagnetic (EM) method is a fast and convenient geophysical tool which can provide resistivity distribution of shallow subsurface. Especially, it can be a useful alternative of resistivity method in a very conductive environment such as a reclaimed saline land. We applied the multi-frequency small loop EM method for the site investigation of reclaimed saline land. We inverted the measured EM data using one dimensional (1D) inversion program and merged to obtain three dimensional (3D) resistivity distribution over the survey area. Finally, comparing he EM results with the drill log and measured soil resistivity sampled at 16 drill holes, we can define the site character such as thickness of landfill, salinity distribution, and etc.

• Korean Journal of Materials Research
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• v.1 no.1
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• pp.23-28
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• 1991

The resistivity of polycrystalline silicon film deposited by low pressure chemical vapor deposition and doped by arsenic Implantation has been investigated as a function of dopant concentration and testing temperature ranging from $25^{\circ}C$ to $105^{\circ}C$ . The resistivity vs. doping concentration curve had a peak point with highest activation energy with respect to the dependence of the resistivity on temperature. We showed that $O_2$ plasma anneal followed by heat-treatment in $N_2$ ambient was able to recover the resistivity degraded by the plasma deposited passivation layers.