• Resources Recycling
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• v.19 no.4
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• pp.51-57
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• 2010

As a recycling of Si sludge from Si wafer process, a Si-SiC-CuO-C composite material was synthesized and investigated as an anode material for lithium batteries. The Si sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by organic washing, magnetic separation, and acid washing. The Si-SiC-CuO-C composite from the recovered Si-SiC mixture was prepared by high-energy mechanical milling. According to the electrochemical tests such as charge-discharge capacity and cycling behavior, it showed the improved cycle performance. The SiC and CuO-related phases were presumed to restrain the volume expansion of the anode and Fe, however, should be removed below 10 ppm prior to synthesis of the composite because it caused the capacity loss of the active material itself.

• Journal of the Mineralogical Society of Korea
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• v.19 no.1 s.47
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• pp.1-5
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• 2006

In this study, we have investigated the purification characteristics of quartz which size was 0.1mm to 0.3 mm by using physical separation techniques. The A and B samples which contained 95,864 mg/kg and 4,568 mg/kg of impurities were reduced upto 126 mg/kg and 174 mg/kg of impurities, respectively. So, removal ratios of the total impurities were about 97.85 wt.% and 96.19 wt.%, individually. At that time, the yields of the purified quartz (over 99.98 wt.% $SiO_2$) were 79.05 wt.% and 75.43 wt.% by using purification process including magnetic separation, gravity separation and scrubbing process. The most benefit in purification process of both different raw materials for iron element can be achieved by magnetic separation. Also, gravity separation is extremely successful for reducing aluminium element.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.85-97
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• 1992

EBFZM( Electron Beam Floating Zone Melting) 법을 이용하여 몰리브덴에서의 금속계 불순물과 침입형 불순물의 정련기구 및 단결정 성장기구를 연구하 였다. Fe, Cr, Co등의 금속계 불순물은 몰리브덴과의 평형증기압의 차이에 따른 불순물의 선택적 증발에 의하여 우수한 정련효과를 나타내며, 몰리브덴보다 응점이 높은 Ta, W는 잘 제거되지 않았다. 한편 대역 정제에 의한 정련효과는 미약함을 확인하였다. EBF ZM은 C,0,N등의 침입형 불순물의 정련에도 효과적 이었다. 본 연구의 모든 조건에서 몰리브덴은 단결정으로 성장하였으며 2차 재결정 epitaxy에 의한 단결 정 성장기구가 제시되었다. 몰리브덴 단결정 내의 전 위밀도는 strain-anneal법에 의한 단결정의 경우보다 높았으며,본 실험의 열처리 조건에서는 변화하지 않았다. The purification and single crystal growth mechanisms of molybdenum were analysed in EBFZM ( electron beam floating zone melting). Metallic impurities of Fe, Cr, Co were purified efficiently but Ta and W were not removed well in this study. It was due to a preferential evaporation of the elements caused by the difference in equillibrium vapor pressure between the elements and molybdenum. The pu- rification effect by zone refining was not significant. The EBFZM also refined the interstitial impurities of C, 0 and N, effectively. The single crystals of molybdenum were grown regardless of the experimental conditions and the secondary recrystallization epitaxy was surge sled as a growth mechanism. The dislocation density in single crystal was higher than that by strain-anneal method, and was not reduced by heat treatments.

• Applied Chemistry for Engineering
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• v.5 no.6
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• pp.925-934
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• 1994

Nickel recovered from the spent oil-hydrogenation catalysts was used in hydrogenation catalyst preparation. The spent catalyst contains approximately 21.8% Ni, 0.7% Mg, and small quantities of Al, Fe, and Zn. Nickel recovery was obtained by inorganic acid digestion in the order of HCI>$NHO_3$>$H_2SO_4$. For $HNO_3$, 3hour extraction with 3N solution was satisfactory. In the PH range of 6.5~9.0, Ni recovery was higher, but metallic impurities were found to be coprecipitated. The PH in the range of 7.0~9.0 seems to be the optimum condition for separation to obtain acceptable Ni precipitates without the decrease of purity. The catalysts prepared with reclaimed nickel by wet reduction methods showed catalytic activities close to those prepared using reagent nickel in the oil hydrogenation reaction. The surface areas of the support do not seem to affect the catalytic activity.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.837-842
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• 1998

As the size of the integrated circuit is scaled down the importance of Si cleaning has been emphasized. One of the major concerns is abut the removal of metallic impurities such as Cu and Fe on Si surface. In this study, we intentionally contaminated Cu and Fe on the Si wafers and cleaned the wafer by cleaning splits of the chemical mixture of $\textrm{H}_2\textrm{O}_2$ and HF and the combination of HF treatment with UV/$\textrm{O}_3$ treatment. The contamination level was monitored by TXRF. Surface microroughness of the Si wafers was measured by AFM. The Si wafer surface was examined by SEM. AES analysis was carried out to analyze the chemical composition of Cu impurities. The amount of Cu impurities after intentional contamination was abut the level of $\textrm{10}^{14}$ atoms/$\textrm{cm}^2$. The amount of Cu was decreased down to the level of $\textrm{10}^{10}$ atoms/$\textrm{cm}^2$ by cleaning splits. The repeated treatment exhibited better Cu removal efficiency. The surface roughness caused by contamination and removal of Cu was improved by repeated treatment of the cleaning splits. Cu were adsorbed on Si surface not in a thin film type but in a particle type and its diameter was abut 100-400${\AA}$ and its height was 30-100${\AA}$. Cu was contaminated on Si surface by chemical adsorption. In the case of Fe the contamination level was $\textrm{10}^{13}$ atoms/$\textrm{cm}^2$ and showed similar results of above Cu cleaning. Fe was contaminated on Si surface by physical adsorption and as a particle type.

• Applied Chemistry for Engineering
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• v.8 no.3
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• pp.389-394
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• 1997

The distribution of impurity included in benzene layer crystal was explored in layer crystallization of cyclohexane and benzene mixtures. The influence of crystal growth rate on crystal purity was investigated. All experimental results for bezene-cyclohexane system obtained in layer crystallizer have been evaluated with the criterion of Wintermantel. The purity of crystal decreases with increasing degree of subcooling, decreasing feed concentration and increasing crystal growth rate. The crystal growth rate was a key parameter to determine the inclusion of impurity in crystals. The results obtained from runs performed at increasing crystallization time(i.e. crystal thickness) have clearly shown that migration of inclusions within crystal layer to the melt, leading to the removal of impurity occurs. The diffusion of impurity which takes place during the crystallization from the beginning, enhances a further purification of the crystal layer if that underwent a thermal gradient after growth of the layer crystal stops.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.608-617
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• 1997

전자빔 용해법에 의해 고순도 티타늄잉고트 및 버튼시편을 제조하였다. 이들 중 18개의 금속불순물을 GDMS(Glow Discharge Mass Spectrometry)로 그리고 탄소, 질소, 산소의 함량을 고온연소법으로 측정한 후 이들과 전기비저항, 경도와의 관계를 조사하였다. 99%와 99.6%스폰지를 용해한 경우 대부분의금속불순물들이 대폭 감소하는 큰 휘발 정련효과가 나타났으며 비금속불순물들의 경우는 장비의 진공상태에 따라 큰 영향을 받으며 정련효과를 기대할 수 없었다. 금속 불순물중 철은 가장 제거하기 어려운 원소로 밝혀졌으며 이는 원료 스폰기중에서 철이 주불순물이기 때문이며 추가적인 예비정련이 필요한 것으로 나타났다. 상온 및 액체질소온도에서의 전기비저항은 가스불순물의 량이 증가함에 따라 직선적으로 증가하였으며 이들의 저항비($\rho$$_{RT}$ /$\rho$$_{N2}$)는 가스불순물의 총량이 1,000ppm이하의 경우 불순물량이 감소함에 따라 급격하게 저하하였으며 이 이상인 경우 완만하게 감소하였다. 이들의 경도는 가스불순물의 량이 증가하였으며 산소당량의 평방근에 비례하는 것으로 나타났다.다.

• Membrane Journal
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• v.32 no.5
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• pp.314-324
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• 2022

This study is aimed to design a membrane process that systematically removes contaminants including microplastics in sun-dried salt using a separation membrane. In this study, we selected the separation membrane material, pore size, and module suitable for the sun-dried salt fields, and proceeded with the experiments under the salt fields and laboratory conditions. A pilot plant was constructed and tested in our lab and in the actual saltern with the selected 200 kDa, 4 kDa ultrafiltration membranes, and 3 kDa nanofiltration membranes. Most of the impurities in the sea salt were 0.1 ㎛ in size, and more than 7 types of various microplastics were detected in the impurities. After that, as a result of checking the filtered water through the separation membrane process, no impurities were detected. As a result of comparing the existing sea salt component and the sea salt component prepared with separation membrane filtrate, impurities were effectively removed without change in the sea salt component.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.933-937
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• 2000

고기능성 전자재료용 TiO$_2$분말 및 박막제조에 사용되는 중간생성물인 TiCl$_4$는 99% 이상의 고순도가 요구된다. 고순도.미립의 TiO$_2$분말 및 TiCl$_4$는 황산법으로 제조한 저순도 TiO$_2$원료를 사용하여 염소화법으로 Ti-염화물 및 염화불순물로 제조한 후, 대부분의 염화불순물들은 3단계 과정을 거쳐 고순화 하였다. 대부분의 염화불순물은 분리.응축 및 분별증류로, VOCl$_3$는 mineral oil을 첨가하여 비등점을 변화시켜, 그리고 미량의 염화불순물은 열가수분해하여 침전시킨 후 유기용제 처리하여 제거하였다. 유기용제 처리는 TiO$_2$분말의 고순도화에 도움이 되었으며, 입자간의 응집을 적게 하여 TiO$_2$입자크기도 작아졌다. 또한 anatase에서 rutile 결정구조로의 전이온도도 낮아지는 부수적인 효과를 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.286-286
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• 2011

현재의 NEDO (New Energy and industrial technology Development Organization) style Si 정련은 두 단계로 구분되어 있다. 고출력 집속 전자빔을 이용한 금속 실리콘의 1차 용융과 대기압 근처의 플라즈마 아크 용해를 이용해서 B, P를 약간의 반응성 가스를 첨가 하여 제거하는 방법이다. 그러나 저가형 실리콘을 생산하려는 취지와 달리 두 가지의 고가 장비가 필요하다. E-beam melting 장치에서도 반응성이 높은 라디칼을 생성할 수 있다면 하나의 장비에서 두 가지의 정련 작업을 진행시킬 수 있다. 본 연구에서는 고진공에서(< 10-4 Torr) 동작하는 E-beam의 성능에 전혀 영향을 주지 않으면서 플라즈마를 용이하게 생성 시킬 수 있는 방법을 개발하고 이를 적용하여 실제 금속 순도 실리콘 내에 존재하는 B, P가 제거되는지 확인하는 것을 연구 내용으로 한다. 본 연구는 MG (Metal Grade) - Si 을 플라즈마 보조 전자빔 정련을 이용하여 정련한 Si 의 불순물 함량의 개선 효과를 조사하는 것이다. MG-Si 의 정련 방법 중에서 고출력 집속 전자빔을 이용하여 휘발성 오염물질을 제거 후, 플라즈마 아크 용해를 이용해서 B 를 제거하는 방법을 접목시켰다. MG-Si 에 DC power 와 전자빔을 집속시켜서 정련을 하면 챔버 내의 잔류 수증기가 플라즈마에 의해 분해되어 O를 생성하고, B와 반응을 하여 BO 형태로 제거가 된다. 방전 전압 700 V 와 전자빔 가속 전압이 4.5 kV, 방출 전류는 11 A, 진공 챔버 내의 압력은 $7.2{\times}10^{-4}$ Torr에서 정련을 진행하여 B를 제거했다.