• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.151-157
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• 1996

Magnetic properties and microstructures of FeTaNC thin films, which were deposited by magnetron reactive sputtering rrethod, were investigated as a function of $CH_{4}$ and $N_{2}$ gas partial pressures. Magnetic properties of FeTaNC films depended on total reactive gas pressure as well as $CH_{4}/N_{2}$ pressure ratios. For reactive gas partial pressures of 5~10 %, optimum magnetic properties were observed in the FeTaNC films with proper $CH_{4}/N_{2}$ ratio. On the other hand, at 15% of gas partial pressure, FeTaN and FeTaC films showed superior properties to FeTaNC films. Above 15%, the magnetic properties of films rapidly degraded due to an excess incorporation of C and/or N atoms. Excellent soft magnetic properties of 17 kG of Bs, 0.3 Oe of He, and 4000 of $\mu'$(at 5 MHz) were obtained in the FeTaNC films. High permeabilities of FeTaNC films could be explained by the Fe lattice distortion caused by N atoms, hence reduction of magnetic anisotopy. While precipitated TaN and TaC particles effectively supress the growth of $\alpha-Fe$ grains leading to a good soft magentic properties, FeN and FeC phases such as $Fe_3N$, $Fe_4N$, FexC have detrimental effects.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.6 no.1
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• pp.31-36
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• 2000

180g of fermented soy paste and 150g of red pepper paste were packaged in glass jars of 232 mL with different conditions of active packaging and then stored at $13^{\circ}C$ for about 170 and 128 days, respectively. During the storage, package atmosphere, surface color, pH, acidity and microbial flora were monitored to see the effect of packaging conditions. Test packaging conditions include package equipped with $Ca(OH)_2\;as\;CO_2$ absorber, package with pinhole and closed control one. Closed control packages of soypaste and red pepper paste showed the increased $CO_2$ partial pressure, the decreased $O_2$ partial pressure and the constant $N_2$ partial pressure to produce high pressure buildup with storage. The paste packages with $Ca(OH)_2$ maintained relatively low $CO_2$ partial pressure and thus the package pressure close to normal atmospheric pressure for initial storage period of 70 days. The packages with air pinhole channel had the partial pressures of $O_2\;and\;N_2$ decreased with storage time, while $CO_2$ partial pressure first increased to a maximum and then slowly decreased thereafter Without any pressure increase the packages with pinhole gave the lowest quality changes possibly due to the effect of package atmosphere, but it had problem of mold contamination and growth for soy paste after 120 days. There were no difference in microbial flora between the packages after about 70 day storage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.243-248
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• 1997

The effect of $O_2$ partial pressure on microstructure and soft magnetic properties of as-deposited Fe-Hf-O thin film alloys, which are produced by rf magnetron sputtering method in $Ar+O_2$ mixed gas atmosphere, are investigated. Saturation magnetization ($4{\pi}M_s$) of Fe-Hf-O film were decreased with increasing $O_2$ partial pressure, the best soft magnetic properties exhibit at $O_2$ partial pressure of 10%. With further increase of $O_2$ partial pressure, soft magnetic properties decreased continuously. The $Fe_{82}Hf_{3.4}O_{14.6}$ film with $P_{O2}=10%$ exhibits good soft magnetic properties with $4{\pi}M_s=17.7kG$, $H_c=0.7Oe$ and ${\mu}_ {eff}$ (1~100 MHz)=2,500, respectively. The addition of O is effective in grain refinement. In case of $P_{O2}=15%$, it is observed that $Fe_3O_4$ compound is formed and high frequency soft magnetic properties are decrease. The electrical resistvity($\rho$) of Fe-Hf-O film is increased with increasing $O_2$ partial pressure. Electrical resistivity of $Fe_{82}Hf_{3.4}O_{14.6}$ film was 5 times higher than that of the film without oxygen. Thus, it is considered that the good magnetic properties of $Fe_{82}Hf_{3.4}O_{14.6}$ film results from decreasing the $\alpha$-Fe grain size by precipitates (Hf and O), high electrical resistivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.187-191
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• 2019

Perovskite-type oxides have consistently attracted considerable attention for their applications in high-temperature electrochemical devices, such as electrolytes and electrodes of solid oxide fuel cells, oxygen permeating membranes and sensors etc. Among them, the electrical conductivity of 10 % Sr and 10 % Mg doped $LaAlO_3$ (LSAM9191) was measured using impedance spectroscopy and 4-probe d.c. method. Below $550^{\circ}C$, the grain boundary resistance mostly determined the overall conductivity; however, it nearly disappeared above $800^{\circ}C$. Using the defect model and curve fitting, the ionic and electronic conductivity contributions were also separated. In the temperature region where the sample resistance is mostly determined by the grain volume property, LSAM9191 was an oxygen ion conductor at low $Po_2$ and a mixed conductor at high $Po_2$. With increasing temperature, the ionic conduction region only slightly increased. Thus, LSAM9191 is a promising material as an oxygen ion conductor at high temperature and in low $Po_2$.

• Journal of the Korean Ceramic Society
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• v.38 no.6
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• pp.545-550
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• 2001

본 연구에서는 분사연소합성(SCS)을 위한 기초단계로서 용액연소합성에 대한 거동을 살펴보고자 알루미나 합성을 모델로 하였으며 이를 위해 전구체에 대한 열분해거동, 그리고 각 온도에서의 평형종 분압 계산 및 합성과정을 조사하였다. 각각의 열중량 분석(TGA) 결과 산화제와 환원제(연료)의 열분해 이력이 서로 다르게 나타났으며, 열역학 응용 프로그램인 ChemSag에 의한 평형종 분압의 계산에서 연소속도를 저하시킬 수 있는 $CO_2$와 수증기 가스 분압이 상당부분 존재하였다. 산화제/환원제 혼합물의 열분석(DTA/TG) 결과 산화제와 환원제의 열분해 거동의 차이, 그리고 매우 작은 시료의 양으로 인해 263$^{\circ}C$에서 발열피크가 매우 작게 나타났다. 열분석 시료에 비해 발열 에너지를 높이기 위해 산화제와 환원제 혼합 전구체를 비이커에서 증기압을 조절하며 가열시켜 본 결과 27$0^{\circ}C$에서 $\alpha$-Al$_2$O$_3$생성물을 얻을 수 있었다. 따라서 분사연소합성 반응을 통해 세라믹 원료를 합성하기 위해서는 연소과정 중 열분해 거동과 평형종의 분압을 고려하여야 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.216.2-216.2
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• 2013

Nano-indenter는 팁을 박막 표면으로부터 일정 깊이까지 일정한 비율로 힘을 팁에 인가하여 그에 따른 박막의 반응을 in-situ로 확인하기 위하여 고안된 장치이며, 박막은 물론 나노 구조물까지 다양한 범위에서 기계적 특성을 분석하기 위하여 사용되고 있다. 이 연구에서는 유전체 및 확산방지막으로 사용되는 Hf을 rf magnetron sputter로 증착하였으며 이때 Ar 가스와 함께 $N_2$ 가스의 혼합 비율을 다르게 하여 HfN을 증착하였다. 질소 분압에 따라 증착된 HfN 박막은 고온중에서 질소의 영향을 확인하기 위하여 $800^{\circ}C$로 질소 분위기에서 20분간 열처리하여 이후 박막의 nano-mechanical 특성을 nanoindenter를 사용하여 확인하였고 최대 압입력을 250 ${\mu}N$으로 고정하였다. 측정결과 고온 열처리후 HfN 박막은 증착시 질소 분압이 0%에서 5%로 증가함에 따라 surface hardness는 8.6 GPa에서 8.1 GPa로 elastic modulus는 123.7 GPa에서 134 GPa로 각각 변화되는 것을 확인할 수 있었다. 특히, 질소 분압이 2.5%로 증착된 HfN 박막은 열처리후 박막 표면의 물리적 특성이 깊이 방향으로 층을 이루고 있어 nano-indenter 압입시 다수의 pop-in이 나타남을 확인하였다.

• Journal of the Korean Magnetics Society
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• v.10 no.6
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• pp.285-290
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• 2000

BaM thin films were prepared by using RF magnetron sputtering system at room temperature, and then successively annealed to crystallize at 850$\^{C}$ using RTA. The structure and magnetic properties of post-annealed BaM films have been investigated using XRD and VSM, respectively. The dependences of partial oxygen gas pressure (Po2) on the characteristics of BaM films were investigated. Although mixing of spinel and BaM phase only was identified in 0.5 mTorr oxygen partial pressure, BaM phase only was identified in the range from 1 to 3 mTorr oxygen partial pressure. The saturation magnetization and perpendicular coercivity of BaM thin films decreases with increase of Po2 in the range of Pot between 0.5 and 3 mTorr.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.57.1-57.1
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• 2010

ITO(Indium Tin Oxide)는 전도도와 투과도 특성이 뛰어나 디스플레이, 태양전지, LED 등 여러 산업에서 전극 물질로 널리 사용 되어져 왔다. 최근 ITO의 사용이 급격히 증가하면서 이에 대한 연구가 활발히 진행되고 있다. ITO는 막의 특성을 좋게 하기 위하여 증착 시 Ar gas와 함께 $O_2$가스를 첨가하기도 한다. 본 연구에서는 산소 분압에 따른 ITO 박막의 전기적, 광학적 특성에 대하여 연구하였다. Corning사의 eagle 2000 glass 기판위에 스퍼터링을 이용하여 ITO layer를 증측하였고, 증착시, $O_2$ partial pressure를 0 - 0.5%까지 0.1% 간격으로 가변하였다. 증착된 샘플은 Sinton사의 UV-vis 장비를 이용하여 광학적 특성을 측정하였고, Hall measurement 장비를 이용하여 전기적 특성을 측정하였다. ITO 박막은 $O_2$의 partial pressure가 증가할수록 향상된 전기적, 광학적 특성을 나타내었다.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.50-54
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• 2016

본 논문에서는 전동차의 정차 시 발생하는 회생에너지를 Battery에 충전할 수 있는 전력 변환 장치를 제안한다. 제안된 전력 변환장치는 DC 1500~2000의 가선전압을 분압하여 저압스위칭 소자 적용하며, 고주파 절연 변압기를 적용하였다. 이를 통해 시스템의 스위칭 주파수를 상승시켜 수동 소자들의 사이즈 축소 및 비용 절감 효과를 높이고, 가선과 Battery의 전기적 절연으로 시스템의 안정성을 높였다. 또한 가선 전압 분압을 통해 입력 전압의 변화에 유동적으로 대응할 수 있으며, 시스템의 병렬 구성을 통해 용량의 확장성을 가지게 된다. 제안된 논문에서 제안된 회생에너지 전력 변환 장치는 20[kW] 회생 컨버터 모듈의 5직렬 구성을 통해 100[kW]급 회생 컨버터 유닛을 구성하였으며, 회생 컨버터 유닛을 5병렬로 구성하여 500[kW]급 회생 전력 변환시스템을 구성하였다. 제안된 회생에너지 시스템은 모의 가선 전압 장치 및 Battery 부하를 통해 시스템의 타당성을 검증 한다.