• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.521-527
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• 2010

The Paved Track is applied to reduce maintenance cost of conventional line. The Paved Track could be used in all types of lines including earthwork, bridge, tunnel and turnout sections. In case of earthwork section, the construction joint is the most critical factor to track durability. The construction joint does not affect to the track structure directly, but the gap due to discontinuity of slabs may affect to the long-term serviceability. To evaluate this problem, the accelerated track test has been performed on the construction joint and the middle part to of the real scale Paved Track. The purpose of this test is that evaluate the vulnerability of construction joint section comparing the trends of settlement and earth pressure under repeated loads of construction joint with those of the middle slab part.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.9
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• pp.613-623
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• 2013

This study is purposed to evaluate the airborne asbestos concentrations in life environment surroundings in Seoul. In study, we investigated airborne asbestos concentrations in thirteen subway stations, four monitoring networks and each vicinity roadside, six stream surroundings, four tunnels quarterly and we also investigated relationship between the airborne asbestos concentrations and ambient temperature in monitoring networks and time-based airborne asbestos concentration variability for two typical monitoring networks, two subway stations transferred and used by lots of people through Phase Contrast Microscopy (PCM) and Transmission Electron Microscopy (TEM). The airborne asbestos concentrations by PCM for 4 objects of study were less than the detection limit (7 fiber/$mm^2$) in 111 (50%) out of 223 samples. The highest concentration was 0.0130 f/cc. But additional TEM analysis result for samples exceeding the guideline value for indoor air quality (0.01 f/cc) proposed by the Ministry of Environment (Korea), no asbestos was detected. Similarly TEM analysis result for 124 samples, no asbestos was detected. The average airborne asbestos concentrations by PCM in subway stations, monitoring networks, streams and tunnels were $0.0041{\pm}0.0027$ f/cc, $0.0015{\pm}0.0011$ f/cc, $0.0024{\pm}0.0012$ f/cc and $0.0016{\pm}0.0020$ f/cc. All objects of study were satisfied with the guideline value for indoor air quality. The relationship between the airborne asbestos concentrations and ambient temperature in monitoring networks was generally positive correlation (r = 0.660). The higher ambient temperature was and the more transient population was, the airborne asbestos concentrations by time for two subway stations were increased. While the airborne asbestos concentrations for two monitoring networks showed no variation pattern according to time.