• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.366-375
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• 2005

A fabrication process of periodic electric field assisted poling of Ti-diffused channel waveguides in LiNbO3 (Ti:PPLN) has been developed and improved using a periodic 180o phase inversion along the z-axis. The zig for poling inversion and the Labview program of charge control have been devised. Pulse high voltage and duty cycle were adjusted based on the estimated charge required for poling inversion. Monitoring the change of leakage current under applied voltage less than the coercive voltage also minimized a breakdown.

• Ceramist
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• v.3 no.4
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• pp.76-81
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• 2000

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.306-307
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• 2000

1962년 Armstrong 등에 의해 second harmonic generation(SHG) 의 이론이 완성된 후 SHG 효율을 높이기 위한 방법으로 비선형성이 큰 물질의 개발과 더불어 위상정합(phase matching)을 만족시키는 여러가지 방법이 연구 되었다. 특히 위상정합의 경우 지금까지는 복굴절을 이용하는 방법이 널리 사용되었으나 이 경우 입사광의 파장이 제한적이고, 많은 무기물 결정에서 비선형광학계수의 가장 큰 텐서 성분인 $d_{zzz}$를 사용할 수 없다는 단점을 가지고 있다. 반면 유사위상정합(Quasi-phase matching:QPM) 은 비선형광학계수( $d_{zzz}$)의 방향을 결맞음 길이(coherence length)마다 분극반전 시켜주어 2차 조화파의 진폭을 길이방향으로 계속 증가시키는 방법으로 구역반전된 길이를 조절하면 거의 모든 파장에 대해 비임계 위상정합( $d_{zzz}$ 사용)이 가능하고, 2차 조화파가 기본파의 전파경로에서 벗어나는 walk-off 현상이 없어 SHG 전환효율을 극대화할 수 있다. (중략). (중략)

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.45-45
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• 1997

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.234-235
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• 2003

오늘날 급속한 인터넷 사용량 증가로 인해 광통신 시스템의 고속화와 대용량화의 필요성은 점점 커지고 있다. 이에 광신호 처리에 있어서 초고속 광 스위칭과 파장분할 다중화 방식이 활발히 연구되고있으며, 특히 주기적으로 분극 반전된 리튬나오베이트(LiNbO$_3$：PPLN)를 이용한 스위칭 소자나 파장 변환기에 대한 연구가 많이 진행되고 있다. PPLN 제작을 위하여 최근에는 고압의 전계를 리튬나오베이트(LiNbO$_3$)에 인가하는 방법이 우수한 특성으로 인하여 주로 사용되고 있다. (중략)

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.122-123
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• 2004

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.262-267
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• 2006

We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.53-58
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• 2006

When external field was applied to congruent $LiNbO_3$, it was investgated for domain formation and expansion of $LiNbO_3$. The domain wall velocities of 0.5 mm thickness $LiNbO_3$ were 28.70, 16.02 and $5.75{\mu}m/sec$ under poling field of 23.5, 22.0 and 21.0 kV/mm, respectively. As $1 M{\Omega}$ resistor was used in domain inversion system, harmonic domain inversion was not achieved by rapid domain expansion. And 50% duty cycle periodically poled $LiNbO_3$ have been fabricated by charge control using $10 M{\Omega}$ resistor.

• Journal of the Korean Applied Science and Technology
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• v.35 no.4
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• pp.1206-1212
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• 2018

In this study, the polarization reversal characteristics of thin film capacitors with a thickness of 100 nm or less fabricated with ferroelectric polymer were measured and analyzed. For the fixed film thickness, polarization reversal occurred at higher coercive fields as the applied maximum electric field increased. For the fixed maximum electric field, polarization reversal occurred at the same coercive field irrespective of the thickness of the thin film. The proportional constant values between the logarithmic electric field and the logarithmic scale frequency were $0.12{\pm}0.01$ for all measurements. As a result, the ferroelectric polymer capacitors consistently exhibited polarization reversal characteristics without any size effects up to a thickness of 40 nm. This study shows the possibility of a polymer memory device that can operate at low voltage, which is useful for predicting the behavior of a low-voltage operating polymer memory device.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.226-227
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• 2005