• Title/Summary/Keyword: 분광 감응도

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Fabrication of the Fast Scanning Spectrophotometer Using Si-Photodiode Array (실리콘 광다이오드 어레이를 이용한 초고속 분광분석기 제작)

  • 정만호
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.11 no.4
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    • pp.51-58
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    • 1997
  • I배열형 광다이오드인 EG&G Reticon을 사용하여 측정시간이 약 10[ms]인 광측정용 초고속 분광광도계를 제작하였다. 핵심 부품인 배열형 광다이오드의 물리적 특성인 화소의 균일성, 선형성, 분광감응도를 측정하였다. 화소의 균일성과 선형성은 각각 0.5[%] 이내에서 일치하였으며, 분광감응도는 400[nm]에서 900[nm]까지 표준검출기를 사용하여 구하였다. 제작된 분광광도계는 2[nm]의 대역폭으로 측정이 가능하며 측정불확도는 2[%] 정도였다. 성능평가를 위해 미표준국의 표준기준물인 2009 didymium 필터와 수은 선광원을 측정한 결과 양호한 값을 얻었다.

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A Study on the Characteristics Analysis and Design of High Sensitivity Silicon Photodiode for Laser Detector (레이저 검출용 고감도 실리콘 포토다이오드 제조 및 특성 분석에 관한 연구)

  • Lee, Jun-Myung;Kang, Eun-Young;Park, Keon-Jun;Kim, Yong-Kab
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.5
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    • pp.555-560
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    • 2014
  • In order to improve spectrum sensitivity of photodiode for detection of the laser wavelength at 850 nm ~ 1000 nm of near-infrared band, this study has produced silicon-based photodiode whose area is $5000{\mu}m{\times}2000{\mu}m$, and the thickness is $280{\mu}m$. It was packed by the TO-5 type. The electrical properties of the dark currents have valued of approximately 0.1 nA for 5 V reverse bias, while the capacitance showed 32.5 pF at frequency range of 1 kHz and about 32.4 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was as fast response as 20.92 ns for 10V. For the optical properties, the best spectrum sensitivity was 0.57 A/W for 890 nm, while it was relatively excellent value of 0.37 A/W for 1,000 nm. Over all, there were good spectrum sensitivity for this diode over the range of 870 ~ 920 nm.

Characteristics of Photodetectors for spectral radiance measurements (분광복사휘도 측정용 광검출기의 특성 평가)

  • 서정철;박승남;김봉학
    • Korean Journal of Optics and Photonics
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    • v.12 no.5
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    • pp.376-381
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    • 2001
  • We have fabricated a spectroadiometric system to measure spectral radiance of optical sources and evaluated its characteristics such as spectral responsivity, nonlinearity, and so on. The measurement system with PMT, Si, InGaAs, and IR-enhanced InGaAs detectors has shown a good linearity and a wide spectral responsivity of 250∼2500 nm. This spectroradiometric system will be used as the primary national standard system of spectral radiance measurements.

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Photocatalytic Reaction of Sensitizer, Rose Bengal and Supersensitizer, Allylthiourea (감응제 Rose Bengal과 초감응제 AIIylthiourea의 광촉매 반응)

  • Yoon, Kil-Joong;Lee, Beom-Gyu
    • Analytical Science and Technology
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    • v.11 no.1
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    • pp.13-19
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    • 1998
  • In the dye sensitization for the solar energy conversion with a photoelectrochemical cell containing allylthiourea, the time profile of the sensitized photocurrent showed a rise and fall with the irradiation time. The dye solution before and after irradiation was analyzed by means of spectroscopic methods. A new precipitation reaction between sensitizer and supersensitizer and photobleaching of the dye appeared to be involved in the decreased photocurrent.

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Photocatalytic Reaction of Sensitizer, Rose Bengal and Supersensitizer, Thiourea (감응제 Rose Bengal과 초감응제 Thiourea의 광촉매 반응)

  • Yoon, Kil-Joong
    • Analytical Science and Technology
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    • v.9 no.1
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    • pp.62-71
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    • 1996
  • The enhancement of the solar energy conversion efficiency into the electrical energy by the dye sensitization with a photoelectrochemical cell was studied. The magnitude of the rose bengal sensitized photocurrent containing the supersensitizer, thiourea was five times greater than that in the absence of thiourea. It was observed, however, that the long time span of irradiation causes the decrease in the photocurrent. Spectroscopic analysis of the dye solution showed that the dye molecule was photobleached and the insoluble aggregate which settles down in the solution, was formed as a result of the possible photocatalytic reaction and the disappearance of dye from the solution was the cause of the decreased photocurrent in the sensitization run.

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Preparation of Dye Sensitized Solar Cell Using Coumarin Dyes Extracted from Plants (식물에서 추출한 천연 쿠마린계 염료를 이용한 염료감응 태양전지의 제조)

  • Jung, Onyu;Lee, Sang-Soo
    • Korean Chemical Engineering Research
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    • v.51 no.1
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    • pp.157-161
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    • 2013
  • Low priced and environment-friendly natural dye from coumarin- containing plants for the dye sensitized solar cell (DSSC) was developed. Dyes were extracted from cinnamon and angelica that contained coumarin derivatives, and DSSCs employing these dyes were prepared. PV efficiency of 0.75% was obtained from cinnamon dye, which is comparable to the highest efficiency reported in precedent studies about natural dye DSSC. It was confirmed by UV-visible and FT-IR spectroscopy that coumarin derivatives in the plants acted as photosensitive material.

A Study on the Photocatalytic Dimerization of Rose Bengal and Allylthiourea (Rose Bengal과 Allylthiourea의 광촉매 이합체화 반응에 관한 연구)

  • Yoon, Kil-Joong;Hahm, Eun-Jeong;Kim, Kang-Jin
    • Analytical Science and Technology
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    • v.11 no.1
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    • pp.20-28
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    • 1998
  • Fluorimetric and absorption spectroscopic studies were performed to elucidate the photocurrent decay with time in the conversion process of solar energy into electrical energy using a photoelectrochemical cell containing rose bengal as a sensitizer, and allylthiourea as a supersensitizer. Spectra of dye solution before and after irradiation revealed a new photocatalytic dimerization reaction between sensitizer and supersensitizer. It was also found that the geometrical arrangement of the transition dipoles is oblique in the dimer of dye molecules.

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Analysis of Electrical and Optical Characteristics of Silicon Based High Sensitivity PIN Photodiode (Silicon기반 고감도 PIN Photodiode의 전기적 및 광학적 특성 분석)

  • Lee, Jun-Myung;Kang, Eun-Young;Park, Keon-Jun;Kim, Yong-Kab;Hoang, Geun-Chang
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.6
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    • pp.1407-1412
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    • 2014
  • In order to improve spectrum sensitivity of photodiode for detection of the laser at 850 nm ~ 1000 nm of near-infrared wavelength band, this study has produced silicon-based fast film PIN photodiode and analyzed electrical and optical properties. The manufactured device is packaged in TO-18 type. The electrical properties of the dark currents both Anode 1 and Anode 2 have valued of approximately 0.055 nA for 5 V reverse bias, while the capacitance showed 19.5 pF at frequency range of 1 kHz and about 19.8 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was verified to have fast response time of about 30 ns for 10 V. For the optical properties, the best spectrum sensitivity was 0.66 A/W for 880 nm, while it was relatively excellent value of 0.45 A/W for 1,000 nm.