• Journal of Korea Technology Innovation Society
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• v.10 no.4
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• pp.789-807
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• 2007

Technology Readiness Levels were initially proposed by NASA in 1995. TRL's definition and range were modified within adopted feilds such as hardware and software products. Many national R&D programs have similar evaluation conditions. However, they are influenced by the experts' ability. Relatively, they have shown the little reliance and the low performance of the developed prototype and technology. The purpose of this study is to apply the TRL to the materials and components development program. We defined TRLs for the program and devided them in three technology fields. Proposals, which were submitted for the program in 2007, were assessed with our TRL definitions for the study on the applicability. As a result, we could understand the characteristic TRLs of the technical proposals to the materials and components development program. This shows that the objective tools such as TRLs are required as the R&D program management factors. For the sake, it is the important factor that the detail directives to assess TRL should be developed according to the branches of industrial technology fields.

• International Area Studies Review
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• v.18 no.3
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• pp.205-229
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• 2014

Global production networks (GPNs) emerged as multinational companies strategically relocated different stages of their value chain over many regions. Since GPNs require moving materials, parts, components and finished products across national borders multiple times, as well as coordinating it efficiently, they are intensified further within an integrated region. Within the region, developed countries which enjoy a comparative advantage in higher value-added tasks specialize in the production of ICT parts and components and exhibit high export RCA indices while developing countries show high import RCA indices. But, as developing countries upgrade technological capabilities and achieve industrial upgrading through participation in GPNs, their level of sophistication improves. East Asian countries have participated in GPNs to a greater degree when compared to countries in other regions because of a variety of factors. They have benefited much as shown by a significant increase in the level of ICT sophistication and export shares, which in turn led to uneven regional developments of GPNs in the ICT parts and components industry.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Korean Journal of Materials Research
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• v.32 no.11
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• pp.489-495
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• 2022

This research investigated how adding Sb (0.75, 1.0, 2.0 and 5.0 wt%) to as-extruded aluminum alloys affected their microstructure, mechanical properties, electric and thermal conductivity. The addition of Sb resulted in the formation of AlSb intermetallic compounds. It was observed that intermetallic compounds in the alloys were distributed homogenously in the Al matrix. As the content of Sb increased, the area fraction of intermetallic compounds increased. It can be clearly seen that the intermetallic compounds were crushed into fine particles and homogenously arrayed during the extrusion process. As the Sb content increased, the average grain size decreased remarkably from 282.6 ㎛ (0.75 wt%) to 109.2 ㎛ (5.0 wt%) due to dynamic recrystallization by the dispersed intermetallic compounds in the aluminum matrix during the hot extrusion. As the Sb content increased from 0.75 to 2.0 wt%, the electrical conductivity decreased from 61.0 to 59.8 % of the International Annealed Copper Standard. Also, as the Sb content increased from 0.75 to 2.0 wt%, the ultimate tensile strength did not significantly change, from 67.3 to 67.8 MPa.

• 기계와재료
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• v.21 no.2
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• pp.50-73
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• 2009

본 고는 중대형 풍력터빈의 핵심부품인 로터 블레이드, 대형베어링, 증속기, 발전기, 전략변환장치, 타워 등에 사용되는 주요재료에 대한 설명과 제조방법 및 평가 방법 등에 대해 다루어 졌다. 일반적으로 풍력터빈을 구성하는 소재는 금속소재와 비금속재료로 구분되며, 비금속재료는 대부분 복합재료로써 풍력 블레이드에 적용되고 있다. 현재 육상용 풍력터빈의 한계를 극복하기 위한 대안으로, 해상용 풍력터빈에 대한 관심이 집중되고 있으며, 이러한 극지 해상의 대형 시스템에 활용되고 있는 금속소재의 경우, 고강도, 저온인성, 내피로, 내식성 등이 우수한 강재를 요구하기에 이르렀다. 이에 따라, 여러 소재 측면의 요구를 충족하기 위한 소재설계의 비중이 점차 고조되고 있으며, 이러한 시점에 본 고를 통해 풍력터빈에 활용되고 있는 소재의 전반적인 내용과 관련 소재부품의 제조 및 평가 방법등의 이해를 돕고자 한다.

• Transactions of Materials Processing
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• v.14 no.4 s.76
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• pp.303-309
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• 2005

Reverse Engineering 기술을 이용하여 금형 형상을 측정하고 이를 이용하여 자동차 주요 대형 성형 부품에 대하여 유한 요소 성형 해석을 수행하여 성형 인자들의 영향에 대하여 분석한 결과 다음과 같은 결론을 얻었다. (1) Reverse Engineering 기술의 사용은 대형 자동차 성형 부품에 대하여 성형 해석을 위한 금형 CAD 데이터를 확보하는데 유용함을 알 수 있었다. 그러나 보다 적극적으로 사용되기 위해서는 곡면 생성의 시간 단축과 제품 면에 발생한 주름에 의한 형상 차이 등의 문제를 해결하여야 할 과제가 남아 있다. (2) 성형 해석을 위하여 자동차 외판 부품 Trunk lid outer에 대하여 성형 해석을 수행 결과 부픔의 성형성에 영향을 주지 않는 한도 내에서 r값과 n 값이 낮은 소재를 사용하는 것이 부품의 형상 동결성을 확보하는데 유리한 것을 알 수 있었다. (3) 판재 성형 부품에 대한 적절한 소재의 재질 선정 방법으로서 유한 요소 해석이 매우 유용한 것을 알 수 있었다.

• Proceedings of the Korean Reliability Society Conference
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• 2001.06a
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• pp.113-124
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• 2001

• Journal of Korean Electronics
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• v.5 no.6
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• pp.6-11
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• 1985

• Journal of Korean Electronics
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• v.4 no.9
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• pp.2-7
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• 1984

• Journal of Korean Electronics
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• v.29 no.2
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• pp.16-25
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• 2009