• Title/Summary/Keyword: 복소 스펙트럼

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Determination of optical constants and thickness of organic electroluminescence thin films using variable angle spectroscopic ellipsometry (가변입사각 분광타원 법을 이용한 유기 발광 박막의 광학상수 및 두께 결정)

  • 김상열;류장위;김동현;정혜인
    • Korean Journal of Optics and Photonics
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    • v.12 no.6
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    • pp.472-478
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    • 2001
  • We determined the optical constants and thickness of organic electroluminescence thin films using variable angle spectroscopic ellipsometry. Using the measured transmittance spectra and the spectroscopic ellipsomeoy data of the organic films on glass substrates in the optically transparent region, we determined the effective thickness and the refractive indices of organic thin films. Then by applying a numerical inversion method to variable angle spectro-ellipsometry data, we determined the complex refractive index at each wavelength including the optically absorbing region, as well as the thickness and surface micro-roughness of the organic thin films. The calculated transmittance spectra showed a tight agreement with the measured ones, confining the validity of the present model analysis.

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Complex Impedance Characteristics and Electrical Conductivity of ${Nd_{1-x}}{Sr_x}{Ga_{1-x}}{Mg_x}{O_{3-\delta}$ Electrolytes (${Nd_{1-x}}{Sr_x}{Ga_{1-x}}{Mg_x}{O_{3-\delta}$ 고체전해질의 복소임피던스 특성과 전기전도도)

  • ;Allan J. Jacobson
    • Journal of the Korean Ceramic Society
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    • v.38 no.4
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    • pp.325-330
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    • 2001
  • 고상반응법으로 이론 밀도의 약 97%의 소결 밀도를 갖는 N $d_{1-x}$S $r_{x}$G $a_{1-x}$M $g_{x}$ $O_{3{\delta}}$(x=0, 0.03, 0.07, 0.1) 고체전해질을 제조하였다. X선 회절 분석 결과, x=0.03일 때의 X선 회절도는 순수한 NdGa $O_3$와 같았으나, x=0.07, 0.1일 때에는 불순물이 나타났다. 교류 복소임피던스는 4$50^{\circ}C$~90$0^{\circ}C$의 온도 범위에서 공기 중에서 측정하였으며, 각 조성에 대하여 상호 비교 분석하기 위하여 복소비저항 스펙트럼으로 변환하여 해석하였다. 전기전도도는 N $d_{0.93}$S $r_{0.07}$G $a_{0.93}$M $g_{0.07}$ $O_{0.97}$(x=0.07) 시편이 90$0^{\circ}C$에서 6$\times$$10^{-3}$ S$cm^{-1}$ /로 가장 우수하였으며, 활성화 에너지는 저온 영역에서는 1 eV, 고온 영역에서는 0.74 eV이었다.다.

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Determination of optical constants for organic light emitting material of Alq3 using Forouhi-Bloomer dispersion relations (포로히-블루머(Forouhi-Bloomer) 분산식을 이용한 유기발광물질 Alq3의 광학 상수 결정)

  • 정부영;우석훈;이석목;황보창권
    • Korean Journal of Optics and Photonics
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    • v.14 no.1
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    • pp.1-7
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    • 2003
  • We determined the optical constants of organic light emitting material of Alq$_3$ in a spectral range between 1.5 and 6 eV using the physical model introduced by Forouhi and Bloomer[Phys. Rev. B 34, pp. 7018-7026, 1986.]. The initial parameters of $A_i,\;B_i,\;C_i$ of Forouhi-Bloomer dispersion relations were determined from the absorption peaks and widths of absorption spectra of the Alq$_3$ film. The refractive index of substrate, a fused silica, is derived from the Sellmeier equation with the measured transmittance and reflectance spectra. Then, the complex refractive index and thickness of the Alq$_3$ film were calculated by use of a nonlinear least square fitting program with the Forouhi-Bloomer dispersion relation and the measured transmittance and reflectance spectra.

Organ Recognition in Ultrasound images Using Log Power Spectrum (로그 전력 스펙트럼을 이용한 초음파 영상에서의 장기인식)

  • 박수진;손재곤;김남철
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.9C
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    • pp.876-883
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    • 2003
  • In this paper, we propose an algorithm for organ recognition in ultrasound images using log power spectrum. The main procedure of the algorithm consists of feature extraction and feature classification. In the feature extraction, as a translation invariant feature, log power spectrum is used for extracting the information on echo of the organs tissue from a preprocessed input image. In the feature classification, Mahalanobis distance is used as a measure of the similarity between the feature of an input image and the representative feature of each class. Experimental results for real ultrasound images show that the proposed algorithm yields the improvement of maximum 30% recognition rate than the recognition algorithm using power spectrum and Euclidean distance, and results in better recognition rate of 10-40% than the recognition algorithm using weighted quefrency complex cepstrum.

Directional Harmonic Wavelet Analysis (방향성 조화 웨이블렛 해석 기법)

  • 한윤식;이종원
    • Journal of KSNVE
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    • v.8 no.5
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    • pp.957-963
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    • 1998
  • A new signal processing technique, the directional harmonic wavelet map(dHWM), is presented to characterize the instantaneous planar motion of a measurement point in a structure from its transient complex-valued vibration signal. It is proven that the directional auto-HWM essentially tracks the shape and directively of the instantaneous planar motion, whereas the phase of the directional cross-HWM indicates its inclination angle. Finally, the technique is suessfully applied to an automobile engine for characterization of its transient motion during crank-on/idling/engine-off.

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Analysis of Vibration Transmissibility for Compressor of Refrigerator by Vector Synthesis Method (벡터합성법에 의한 냉장고 압축기의 진동전달 해석)

  • 오재응;조준호;김진동
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.1
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    • pp.14-21
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    • 1995
  • General Mechanical Structures have various and complex vibration transmission paths. In order to identify the mechanism of vibration transmission. The correct estimation of exciation forces and the exact modeling of transmission paths are required. In this paper, vector synthesis technique is employed to identify the characteristics of vibration input and it's transmission to body structure for the mounting system of a compressor in a refrigerator. Vibration reduction efficiency of each transmission path is evaluated by comparing individual vector components obtained before and after the paths from experimental research. The degree of effect is used to estimate the contribution of vibration input components to total output. And this paper presents a new technique based on simulation studies using vector synthesis dragram, by which the effects of change of the magnitude and phase of transmission paths can be predicted.

Signal Parameter Estimation via Transfer Matrix Analysis (전달 행렬 분석에 의한 신호변수 추정 기법 연구)

  • 조운현
    • The Journal of the Acoustical Society of Korea
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    • v.17 no.4
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    • pp.82-87
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    • 1998
  • 여러 음원들에 의해 형성된 파동장내에서 각 신호음의 주파수 특성과 시간 지연 (time delay)을 추정할 수 있는 알고리즘을 개발하였다. 이 알고리즘의 관련 수식은 두 개의 상호 간섭하는 신호가 입사하고 여기에 주변 환경에 의한 랜덤 잡음이 첨가된다고 가정하여 유도되었으며 두 개 이상의 신호음이 있는 상황에 대해 확장이 가능하다. 본 논문에서 시간 지연이 일정한 수신 신호 영역에 등간격으로 놓여진 수신기로부터 각 센서에 수신된 신호의 스펙트럼은 M개의 센서에 대해 K개의 음원 스펙트럼과 K개의 조정 벡터(steering vector) 의 선형 조합(linear combination)으로 주파수에서 모델된다. 각 음원의 주파수 특성과 음원 으로 들어오는 신호의 입사각을 결정하기 위하여 본 알고리즘은 전달 행렬(transfer matrix) 을 계산하고 그 전달 행렬의 고유값(eigenvalue)과 고유벡터(eigenvector)를 분석한다. 이 고 유값들은 복소수이며 그 크기는 진폭 변환 계수를 결정한다. 위상은 수신기의 간격으로부터 시간 지연을 결정하는 기울기를 갖는 주파수의 선형 함수이다. 전달 행렬에의 입력 자료들 은 동일 간격 소자간의 cross-power spectra이다.

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Determination of the complex refractive index of $Ge_2Sb_2Te_5$ using spectroscopic ellipsometry (분광타원해석법을 이용한 $Ge_2Sb_2Te_5$ 의 복소굴절율 결정)

  • Kim, S. J.;Kim, S. Y.;Seo, H.;Park, J. W.;Chung, T. H.
    • Korean Journal of Optics and Photonics
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    • v.8 no.6
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    • pp.445-449
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    • 1997
  • The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

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Measurements of Acoustic Properties of Materials by Spectral Analysis of Ultrasonic Pulses (초음파 펄스의 주파수해석에 의한 재료의 음향특성 측정)

  • Ha, Kang-Lyeol;Kim, Moo-Joon;Lee, Jong-Kyu;Kim, Sung-Boo;Noriyoshi, Chubachi
    • The Journal of the Acoustical Society of Korea
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    • v.14 no.6
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    • pp.40-47
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    • 1995
  • A system for measurement of ultrasonic velocity, attenuation and complex modulus of materials by using the spectral analysis method of pulses has been constructed and its performances are estimated. The system has a mechanical scanning part of an acoustic microscope with a ZnO plane wave transducer of the resonant frequency of 85MHz. Ultrasonic velocity has been obtained by the intervals of maxima (or minima) on the power spectrum of a pulse train reflected from the surface and bottom of a specimen, and attenuation has been obtained by the power spectra of three pulses reflected from the surface and the bottom of a specimen and the surface of a standard specimen. The measured results for materials such as fused quartz, polyester show that the system has very high accuracy.

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Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry (타원 분광기를 이용한 CdTe/GaAs 박막의 복소 유전함수에 관한 연구)

  • Jeen, Gwang-Soo;Jo, Jae-Hyuk;Park, Hyo-Yeol
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.4
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    • pp.157-161
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    • 2005
  • Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.