• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.155-161
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• 2000

BN films composed of c-BN(70%) and h-BN(30%) phases have been synthesized by the ion beam assisted deposition (IBAD) process and stabilized by post-annealing. Boron was e-beam evaporated at 1.2 $\AA$/sec and nitrogen was ionized and accelerated at about 100 eV by the end-hall type ion gun. Substrates were negatively biased by DC 400 and 500 V, respectively, and heated at $700^{\circ}C$. Synthesized BN films were in-situ post-annealed at 700 or $800^{\circ}C$, respectively, for 1 hr without breaking vacuum. BN films without post-annealing were peeled off from substrates immediately when they were exposed to the air while those with post-annealing at $800^{\circ}C$ were stabilized. Post annealing reduced the film stress from 4.9 GPa to 3.4 GPa, but no considerable stress release in the c-BN phase was observed, contrary to previous reports that the stress relaxation in the c-BN phase is the main mechanism for the stabilization. Structural and chemical relaxation of non c-BN phase is supposed to be responsible for the film stress reduction and, in turn, stabilization, especially when the c-Bn content of the film is not high.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.95-99
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• 2018

High thermal conductivity films with electrically insulating properties have a great potential for the effective heat transfer as substrate and thermal interface materials in high density and high power electronic packages. There have been lots of studies to achieve high thermal conductivity composites using high thermal conductivity fillers such alumina, aluminum nitride, boron nitride, CNT and graphene, recently. Among them, hexagonal-boron nitride (h-BN) nano-sheet is a promising candidate for high thermal conductivity with electrically insulating filler material. This work presents an enhanced heat transfer properties of ceramic/polymer composite films using h-BN nano-sheets and PVA polymer resins. The h-BN nano-sheets were prepared by a mechanical exfoliation of h-BN flakes using organic media and subsequent ultrasonic treatment. High thermal conductivities over $2.8W/m{\cdot}K$ for transverse and $10W/m{\cdot}K$ for in-plane direction of the cast films were achieved for casted h-BN/PVA composite films. Further improvement of thermal conductivity up to $13.5W/m{\cdot}K$ at in-plane mode was achieved by applying uniaxial compression at the temperature above glass transition of PVA to enhance the alignment of the h-BN nano-sheets.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.8
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• pp.563-569
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• 1999

Boron doped CdS films were prepared by chemical bath deposition using boric acid$(H_3BO_3)$ as donor dopant source, and their electrical, optical properties were investigated as a function of doping concentration. In addition, effects of boron doping of CdS films on characteristics of CdS/CdTe solar cells were investigated. Boron doping highly decreased the resistivity and slightly increased optical band gap of CdS films. The lowest value of resistivity was $2 \Omega-cm \;at\; H_3BO_3/Cd(Ac)_2$ molar ratio of 0.1. For the molar ratio more than 0.1, however, the resistivity increased because of decreasing carrier concentration and mobility and showed similar value for undoped films. The photovoltaic characteristics of CdS/CdTe solar cells with boron doped CdS film improved due to the decrease of the conduction band-Fermi level energy gap of CdS films and the series resistance of solar cell.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.488-494
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• 2014

The effect of tungsten (W) addition on the hardenability of low-carbon boron steels was investigated using dilatometry, microstructural observations and secondary ion mass spectroscopy. The hardenability was discussed with respect to transformation behaviour aspects depending on the segregation and precipitation of boron at austenite grain boundaries. A critical cooling rate producing a hardness corresponding to 90 % martensite structure was measured from a hardness distribution plot, and was used as a criterion to estimate hardenability at faster cooling rates. In the low-carbon boron steel, the addition of 0.50 wt.% W was comparable to that of 0.20 wt.% molybdenum in terms of critical cooling rate, indicating hardenability at faster cooling rates. However, the addition of 0.50 wt.% W was not more effective than the addition of .0.20 wt.% molybdenum at slower cooling rates. The addition of 0.20 wt.% molybdenum completely suppressed the formation of eutectoid ferrite even at the slow cooling rate of $0.2^{\circ}C/s$, while the addition of 0.50 wt.% W did not, even at the cooling rate of $1.0^{\circ}C/s$. Therefore, it was found that the effect of alloying elements on the hardenability of low-carbon boron steels can be differently evaluated according to cooling rate.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.5
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• pp.241-247
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• 2013

Hardenability and mechanical properties of boron-bearing steels containing C, Mo and Cr were investigated in this study. Using quench dilatometer, the steel specimens were cooled down to room temperature at different cooling rates to construct continuous cooling transformation diagrams and then the transformation products from austenite were examined. A critical cooling rate was introduced as an index to quantitatively evaluate the hardenability. The C addition to boron-bearing steels did not significantly affect hardenability compared to boron-free steels although it increases the hardenability. With the same content, the Mo addition largely increased the hardenability of boron-bearing steels than the Cr addition because it decreased both the transformation start and finish temperatures at low cooling rates. In particular, the Mo addition completely suppressed the formation of eutectoid ferrite even at the slow cooling rate of $0.2^{\circ}C/s$, whereas the Cr addition nearly suppressed it at the cooling rates above $3^{\circ}C/s$.

• Journal of the Korean Society of Propulsion Engineers
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• v.15 no.5
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• pp.96-106
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• 2011

There are many advantages in applying gel propellant to a gel propulsion system. These include higher performances, the energy management of liquid propulsion system, reliable storability and low leakage characteristics. Additionally, gel propulsion system are preferable to the high density impulse of propulsion system. Also, when compared to liquid propellants, the gel propellants acquire greater heat energy. Gel propellants achieve a high specific impulse when metal particles with aluminum and boron are added. With respect to atomization, an inactive process occurs due to the variable viscosity of the metal particles and gelling agents. To improve the defect of atomization and combustion characteristics of gel propellant, a variety of issues related to spray and combustion is introduced here.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.2
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• pp.1-6
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• 1983

The reduction of threshold voltage and punchthrough voltage of short channel MOS transistors has been measured experimentally with silicon gate NMOS transistors. The effects of the gate oxide thickness and substrate doping concentration on the threshold voltage and punch-through voltage have also been measured with sample devices with boron implantation and gate oxide thickness of 50 nm and 70 nm. Hot electron emission has been measured by floating gate method for the samples with 3 ${\mu}{\textrm}{m}$ channel length. It has been concluded from this measurement that hot electron emission is not significant for the channel length of 3${\mu}{\textrm}{m}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.180-180
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• 2016

보론이 도핑된 $3{\times}3cm$ 크기의 p 형 다결정 실리콘 기판의 표면을 경면연마한 후, 다이아몬드 입자의 seeding을 위해 슬러리 중 다이아몬드 분말의 입도를 5 nm로 고정하고 초음파 전처리 공정을 진행한 후, 다이아몬드 박막을 증착하였다. 다이아몬드 증착은 Microwave Plasma Chemical Vapor Deposition 장비를 이용하였으며, 공정 조건은 초기 진공 $10{\times}10^{-3}Torr$, 공정 가스 비율 $Ar:CH_4=200:2$, 가스 유량 202 sccm, 공정압력 90 Torr, 마이크로웨이브 파워 600 W, 기판 온도 $600^{\circ}C$이었다. 기판에 DC bias 전압을 인가하는 것을 공정 변수로 하여 0, -50, -100, -150, -200 V로 변화시켜가며, 0.5, 1, 2, 4 h 동안 증착을 진행하였다. 주사전자현미경과 XRD, AFM, 접촉각 측정 장비를 이용하여 증착된 다이아몬드 입자와 막의 특성을 분석하였다. 각 bias 조건에서 초기에는 다이아몬드 입자가 형성되어 성장되었다가 시간이 증가될수록 연속적인 다이아몬드 막이 형성되었다. Table 1은 각 bias 조건에서 증착 시간을 4 h까지 변화시키면서 얻은 다이아몬드 입자 또는 박막의 높이(두께)를 나타낸 것이다. 2 h까지의 공정 초기에는 bias 조건의 영향을 파악하기 어려운데, 이는 bias에 의한 과도한 이온포격으로 입자가 박막으로의 성장에 저해를 받는 것으로 사료된다. 증착시간이 4 h가 경과하면서 -150 V 조건에서 가장 두꺼운 막이 성장되었다. 이는 기판 표면을 덮은 다이아몬드 박막 위에서 이차 핵생성이 bias에 의해 촉진되기 때문으로 해석된다. -200 V의 조건에서는 오히려 막의 성장이 더 느렸는데, 이는 Fig. 1에 보이듯이 과도한 이온포격으로 Si/diamond 계면에서 기공이 형성된 것과 연관이 있는 것으로 보인다.

• Korean Journal of Materials Research
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• v.25 no.9
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• pp.497-502
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• 2015

The hardenability of boron steel specimens with different molybdenum and chromium contents was investigated using dilatometry and microstructural observations, and then was quantitatively measured at a critical cooling rate corresponding to 90 % martensite hardness obtained from a hardness distribution plotted as a function of cooling rate. Based on the results, the effect of an austenitizing temperature on the hardenability and tensile properties was discussed in terms of segregation and precipitation behavior of boron atoms at austenite grain boundaries. The molybdenum addition completely suppressed the formation of pro-eutectoid ferrite even at the slowest cooling rate of $0.2^{\circ}C/s$, while the chromium addition did at the cooling rates above $3^{\circ}C/s$. On the other hand, the hardenability of the molybdenum-added boron steel specimens decreased with an increasing austenitizing temperature. This is associated with the preferred precipitation of boron atoms since a considerable number of boron atoms could be concentrated along austenite grain boundaries by a non-equilibrium segregation mechanism. The secondary ion mass spectroscopy results showed that boron atoms were mostly segregated at austenite grain boundaries without noticeable precipitation at higher austenitization temperatures, while they formed as precipitates at lower austenitization temperatures, particularly in the molybdenum-added boron steel specimens.

• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.1212-1213
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• 2004

The plasmid was used pBR 322 and ${\varphi}X174$ RF DNA. In neutron experiment, damage of pBR 322 and ${\varphi}X174$ RF DNA were observed according to increasing concentration of BSH and neutron dose. Damage of plasmid DNA appeared obvious by increasing of BSH and neutron irradiation. In ${\gamma}-$ radiation experiment, it was carried out like above neutron experiment but damages of two plasmid appeared no differences from the control unlike neutron result.