• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.96-99
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• 2003

본 논문에서는 수치 해석 방법을 이용하여 $In_{x}Ga_{1-x}N/GaN$ (x=0.06~0.1) 양자우물 구조의 에너지 준위를 계산하였다. InGaN 벌크 샘플(bulk sample)의 PL(photoluminescence) 데이터로부터 bowing factor를 결정한 후 InGaN의 유효 에너지 밴드갭을 계산하였고, InGaN/GaN 양자우물 구조의 전도대와 가전자대의 오프셋(offset)을 0.67/0.33으로 정하였다. 다음으로, 양자화 효과에 의한 에너지 변위와 압전장(piezoelectric field)을 제외한 양축 압축 변형(biaxial compressive strain)에 의한 에너지 변위를 고려하여 기저준위 전자와 heavy hole(le-1hh)간의 천이 에너지를 계산하였다. 계산된 천이 에너지는 PL로 측정한 천이 에너지에 비해 약 9~15 meV 크게 관찰되었는데, 이것은 InGaN/GaN 양자우물 계면에 발생하는 압전장 때문인 것으로 생각된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.545-551
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• 2004

Magnetic suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing Ag$_2$O. Magnetic flux measurements of a toroidal magnet revealed a concave shaped field distribution with a null field along the axis of the torus at the point where the field reversed. The suspension effect was observed only for the Ag$_2$O doped and field cooled sample which is attributed to the enhanced flux pinning due to the field cooled condition. It has been cleared that Ag$_2$O acts as pinning center which plays an important role to the magnetic suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet has been investigated. It has been concluded that the magnetic suspension effect arises from the interaction between the pinning effect and the diamagnetic effect.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.93.1-93.1
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• 2012

세라믹 고온초전도체는 에너지 저장장치의 핵심소재로 사용된다. 초전도 플라이휠 에너지 저장장치(Superconductor flywheel energy storage system)는 전기 에너지를 운동 에너지로 변환하여 저장하는 친환경, 고효율 에너지 저장장치이다. 에너지를 최소화하는데 사용되는 초전도 베어링은 고온초전도체와 영구자석으로 구성된다. 베어링에는 희토류계 초전도 물질(RE-Ba-Cu-O, RE:Rare-earth elements)가 사용된다. 베어링의 효율은 영구자석의 자력크기, 초전도체의 자기부상력과 포획자력에 비례한다. 에너지 저장효율을 높이려면 고온 초전도체의 임계전류밀도(초전도체 내부에 흘릴 수 있는 전기량)를 높이고, 초전도 결정립의 크기를 키워야 한다. 결정크기를 키우는 공정으로 종자결정성장법(Seed growth process)이 사용된다. 초전도체 제조공정은 분말의 성형, incongruent melting을 포함하는 부분 용융, 액상에서의 입성장, 포정반응을 통한 초전도 결정의 성장과정을 포함한다. 본 발표에서는 초전도 에너지 저장장치의 기본 원리, 초전도 베어링의 구성, 베어링용 초전도체의 제조방법과 특성(자기부상력과 포획자력) 평가기술, 차세대 에너지 저장장치로서의 초전도 플라이휠 에너지 저장장치의 전망에 대해 요약하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.91-94
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• 2002

The conditions of zone-melting method such as a sample travel speed in a furnace, content of Nd422, control of melting temperature, and heat-treatment with/without Ar gas for $NdBa_{2}Cu_{3}O_{7-\delta}$ superconductor was optimized, As a results, a $NdBa_{2}Cu_{3}O_{7-\delta}$ sample with a surface area of $25mm^{2}$ showed a good superconducting properties when its travel speed was 6 mm/h, The improvement of superconductivity added with 10~20 wt% of Nd422 phase increasing pinning effect was also shown. The critical current density, $J_{c}$ was remarkable affected by the condition of heat-treatment temperature of $NdBa_{2}Cu_{3}O_{7-\delta}$superconductor with/without Ar ambient gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.677-680
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• 1999

Rapid developing automation technology enhances the need of sensors. Among many materials, silicon has the advantages of electrical and mechanical property, Single-crystalline silicon has different piezoresistivity on 야fferent directions and a current leakage at elevated temperature, but poly-crystalline silicon has the possibility of controling resistivity using dopping ions, and operation at high temperature, which is grown on insulating layers. Each wafer has slightly different thicknesses that make difficult to obtain the precisely same thickness of a diaphragm. This paper deals with the fabrication process to make poly-crystalline silicon based pressure sensors which includes diaphragm thickness and wet-etching techniques for each layer. Diaphragms of the same thickness can be fabricated consisting of deposited layers by silicon bulk etching. HF etches silicon nitride, HNO$_3$+HF does poly -crystalline silicon at room temperature very fast. Whereas ethylenediamice based etchant is used to etch silicon at 11$0^{\circ}C$ slowly.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.39.2-39.2
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• 2009

벌크 비정질 합금 및 공정 조직 합금은 기존의 상용 합금들에 비해 월등히 높은 강도 및 탄성 변형 한계를 나타내며, 고내식, 고마모 특성 등 매우 독특하며 유용한 특성을 보인다. 하지만 상온에서 지극히 제한적인 연성으로 인하여 우수한 특성에도 불구하고 많은 분야에 활용이 되지 못하고 있다. 이러한 단점을 보완하기 위하여 미세조직의 복합화를 통한 연성 부여에 대한 연구가 활발히 진행이 되고 있다. 본 연구에서는 Fe- 합금을 선택하고 비정질 형성능 향상을 위하여 Si를 첨가하였고 그 조성에 따른 미세조직 변화 및 기계적 특성을 관찰하였다. 기계적 특성 평가를 위해 압축시험을 실시하였으며, 미세조직 및 상분석을 통하여 기계적 특성과의 관계에 대해 조사를 하였다. 이때 미세조직 및 상분석 관찰을 위하여 TEM, XRD, SEM을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.185-188
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• 1997

The influence of slow cooling and annealing time in $O_2$ during melting and growth step in MPMG process on J$_{c}$ was investigated. Through the measurement of J$_{c}$ SEM and XRD, it can be observed that the critical characteristics were related with the slow cooling time and annealing time in 02 for melting and growth step of MPMG process. The distribution of critical current density with slow cooling time was the porabolic form and the value of J. was the highest at the 40 hour slow cooling time. And also, the value of J$_{c}$, along the annealing time in $O_2$ in the case of the slow cooling time 40 hour was inclined to increase with annealing time. Consequently, it can be suggested that proper slow cooling titre and annealing time along slow cooling in MPMG process be important to improve the critical characteristics.stics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.189-190
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• 2007

본 논문에서는 칼코게나이드 박막의 Ag 포토 도핑시 기판의 변화에 따른 Ag 이온의 도핑 특성을 예측하고자 하였다. 도핑 특성은 Ag 이온의 도핑으로 인한 굴절률 변화를 이용하여 진폭혈 회절격자 효율을 측정하여 확인하였다. 시료는 5N의 순도를 갖는 Ge, Se, Ag 물질을 준비하였고, 이중 GeSe를 조성의 비에 맞추어서 석영관에 진공 봉입후 용융 혼합하고 급냉하여 비정질 빌크를 제작한다. 만들어진 비정질 벌크와 Ag를 열 증착법을 이용하여 기판에 올리는 방법으로 샘플을 제작한다. 제작된 샘플에 레이저와 몇몇 광학 소자로 구성된 흩로-리소그라피 장치를 이용하여 격자구조로 442nm 의 빛을 조사 시킨다. 결론으로는 기판은 칼코게나이드 박막에의 Ag 도핑에 영향을 미친다는 것을 확인하였다.

• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.699-704
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• 2010

We investigated the cryogenic temperature plasticity of a bulk amorphous alloy. Experiments showed that as temperature decreases, the plasticity of the alloy increases, such that the alloy exhibited ~20% of plastic strain when tested at $-196^{\circ}C$. This enhancement in the plasticity at cryogenic temperatures was associated with the formation of abundant shear bands distributed uniformly over the entire surface of the sample. Nonetheless, the serrations, the characteristic feature of the plastic deformation of amorphous alloys, were unclear at $-196^{\circ}C$. In this study, both the enhanced plasticity and the unclear serrations exhibited by the amorphous alloy at cryogenic temperatures were clarified by exploring shear banding behaviors in the context of the velocity and the viscosity of a propagating shear band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.333-336
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• 2021

Oxide YBCO bulk superconductors are manufactured using the melt process. Because seed crystal growth method utilizes a slow-spreading layer-by-layer reaction, a long-term heat treatment is required to manufacture a single-crystal specimen of several cm. In this study, the melt process method was applied to compensate for the shortcomings of the seed crystal growth method. The thickness of the upper and lower pellets of the YBCO bulk was molded to 40 mm, and YBCO superconductor was produced by heat treatment. The measurement results of capture magnetism was in line with the literature. This results in a relationship that the higher the growth of Y211 particle in the YBCO, the higher the superconducting properties. We analyzed the YBCO superconductor, focusing on the Y₂BaCuO₅ particle distribution.