• Title/Summary/Keyword: 밴드구조

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상온에서 제작된 다결정 인듐갈륨 산화물(IGO) 투명 박막트랜지스터 제조 및 특성 연구

  • Jo, Gwang-Min;Jeong, Yeon-Hu;Lee, Jun-Hyeong;Kim, Jeong-Ju;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.345-345
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    • 2014
  • 최근 디스플레이 기술은 급속도로 발전해 가고 있다. 정보화 기술의 발전으로 언제 어디서나 쉽게 정보를 얻을 수 있는 유비쿼터스 시대로 접근하고 있으며, 휴대가 간편하고 이동성을 가진 휴대용 기기가 인기를 끌고 있다. 이에 따라 더 얇고 더 가벼우며 휴대하기 쉬운 디스플레이가 요구 되고 있고, 더 나아가 떨어뜨려도 깨지지 않고 유연하며, 디자인 변형이 자유로우며, 때론 종이처럼 접거나 휘어지거나 두루마리처럼 말을 수 있는 이른바 "플렉서블 디스플레이"에 대한 필요성이 점점 대두되고 있다. 이러한 첨단 디스플레이의 핵심 소자 중 하나는 산화물 박막 트랜지스터 이다. 산화물 반도체는 넓은 밴드갭을 가지고 가시광선 영역에서 투명하며, 높은 이동도를 가지고 있어 차세대 평판디스플레이, 투명디스플레이 및 플렉서블 디스플레이용 박막트랜지스터(TFT)를 위한 채널층으로써 광범위하게 연구되고 있다. 하지만 현재 대부분의 산화물 박막 트랜지스터 제조 공정은 고온에서의 열처리를 필요로 한다. 고온에서의 열처리 공정은 산화물 박막의 제조 공정 단가를 증가시키는 문제점이 있으며, 산화물 박막이 형성되는 기판의 녹는점이 낮은 경우에는 상기 기판의 변형을 가져오므로(예를 들면, 플라스틱 기판, 섬유 기재 등), 상기 산화물 박막이 적용되는 기판의 종류에 제한이 생기는 문제점이 있었다. 이에 플렉시블 디스플레이 등을 위해서는 저온공정이 필수로 선행 되어야 한다. 산화물 TFT는 당초, ZnO계의 재료가 연구되었지만 2004년 말에 Hosono 그룹이 Nature지에 "IGZO (In, Ga, Zn, O)"을 사용한 TFT를 보고한 이후 IGZO, IZO, ISZO, IYZO, HIZO와 같은 투명 산화물반도체가 TFT의 채널물질로써 많이 거론되고 있다. 그 중에서 인듐갈륨 산화물(IGO)는 삼성분계 n-형 산화물 반도체이고, 채널 이동성이 좋고 광투과도가 우수해 투명 TFT에 매우 유용하게 사용할 수 있다. 이 실험에서 우리는 인듐갈륨 산화물 박막 및 트랜지스터 특성 연구를 진행하였다. 인듐갈륨 산화물 박막은 상온에서 rf-magnetron sputtering법을 사용하여 산소분압 1~10%에서 증착 되었다. 증착된 인듐갈륨 산화물 박막은 cubic $In_2O_3$ 다결정으로 나타났으며, 2차상은 관찰 되지 않았다. 산소분압이 10%에서 1%로 변함에 따라 박막의 전도도는 $2.65{\times}10^{-6}S/cm$에서 5.38S/cm 범위에서 조절되었으며, 이를 바탕으로 인듐갈륨 박막을 active층으로 사용하는 bottom gate 구조의 박막트랜지스터를 제작 하였다. 인듐갈륨산화물 박막트랜지스터는 산소분압 10%에서 on/off 비 ${\sim}10^8$, field-effect mobility $24cm^2/V{\cdot}S$를 나타내며 상온에서 플렉서블용 고 이동도 소자 제작의 가능성을 보여준다.

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A Study on the Luminescence Properties of LiGd9(SiO4)6O2:Ce3+ (LiGd9(SiO4)6O2:Ce3+ 형광 특성 연구)

  • Jin, Seongjin
    • Journal of the Korean Society of Radiology
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    • v.9 no.3
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    • pp.169-174
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    • 2015
  • $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ phosphors were synthesized by solid-state reaction method. The structural characteristic was investigated by X-ray powder diffraction analysis. The emission and excitation spectra of the $Ce^{3+}$ ions doped $LiGd_9(SiO_4)_6O_2$ phosphors were obtained under the UV excitation. The emission spectra of $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ shows the band at 410 nm corresponding to the $^2F_{5/2}$ and $^2F_{7/2}$ states of $Ce^{3+}$. The red shift of $Ce^{3+}$ emission is found as the $Ce^{3+}$ concentration increases, which could be explained by the change in crystal-field symmetry and strength with increasing $Ce^{3+}$ concentration. Fluorescence decay time of $Ce^{3+}$ was about 20 ns. When the concentration of $Ce^{3+}$ increases life time was slightly reduced.

Characteristics of CuGa precursor deposited by sputter as Electron beam irradiation (Sputtering 방법을 이용하여 증착된 CuGa precursor의 전자빔조사에 따른 특성분석)

  • Park, Insun;Kim, Chaewoong;Jung, Seungchul;Kim, Dongjin;Kwon, Hyuk;Kim, Jinhyeok;Jung, Chae Hwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.52.1-52.1
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    • 2011
  • 최근에 에너지 자원의 고갈이 다가오는 상황에서 태양전지 분야가 주목받고 있으며 이에 대한 시장이 급격하게 확대되고 있다. 그러나 현재의 태양전지는 주를 이루고있는 실리콘태양전지의 경우 원재료 수급이 불안정하여 가격 변동이 심하다. 따라서 이를 대체할 2세대 태양전지인 박막형 태양전지의 연구가 활발히 이루어지고 있다. 박막형 태양전지 중에서도 주목받고 있는 것은 Cu(In,Ga)$Se_2$(CIGS)박막 태양전지이다. CIGS는 Ga의 농도에 따라 1.02~1.68eV의 다양한 에너지 밴드갭을 갖는 직접천이형 반도체 물질이다. 또한 $1{\times}10^5cm^{-1}$의 높은 광흡수계수를 가지고 있으며, $450{\sim}590^{\circ}C$의 고온공정에서도 매우 안정하여 열화현상이 거의 보이지 않아 박막형 광흡수층 재료로서 적합하다. 흡수층을 제조하는 방법은 여러 가지가 있지만, 본 연구에서는 균일성이 뛰어나고 원료사용효율이 높은 sputtering 방법을 사용하였다. 그리고 결정화하기위해서 유독기체를 사용하는 셀.렌.화. (selenization) 방법 대신 전자빔을 조사하는 방법을 채택하였다. sputtering을 통한 CIGS precursor을 제조하기위해 2~3개의 화합물target을 사용하는데, 대표적인 방법으로 동시에 sputtering하는 co-sputtering 방법과 각각의 단일 층을 쌓아 제조하는 stack형으로 분류된다. 본 연구는 CIGS precursor를 제조하기 앞서 CuGa 단일 층만을 제조하여 공정조건에 따른 박막을 제조하였다. 제조된 CuGa 단일층은 전자빔 처리에 따른 영향을 알아보기 위해 전자빔의 세기와 공정시간을 달리하여 특성을 알아보았다. 실험에서는 Cu:75wt%,Ga:25wt% 조성의 target을 사용하여 공정 압력을 각각 10~1mTorr로 변화시키며 실험을 실시하였으며 공정 power는 50W, 70W, 100W로 변화 시키며 실험을 실시하였다. 이때 실험의 초기진공은 turbo-molecular pump를 이용하여 $1{\times}10^{-6}torr$ 이하로 하였으며, Target과 기판사이의 거리는 모두 같은 조건으로 고정하여 실험을 실시하였다. 박막의 균일성을 증가시키기 위하여 5 rpm의 속도로 기판을 회전하였으며 기판 온도는 가열하지 않고 상온에서 전구체를 증착하였다. 그 후 전자빔의 세기를 고정 시킨 후 전자빔 조사 시간을 조절하여 전자빔 조사 전후의 특성을 각각 분석하였다. 전기적특성은 Hall effect, 4-point probe, 구조적 특성은 SEM,EDS, XRD, XRF 를 이용하여 분석하였다.

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Substrate Specificities of ${\alpha}$-Galactosidase from Mortierella sp. (Mortierella sp. 유래 ${\alpha}$-Galactosidase의 기질특이성)

  • Park, Gwi-Gun
    • Microbiology and Biotechnology Letters
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    • v.39 no.3
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    • pp.245-251
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    • 2011
  • [ ${\alpha}$ ]Galactosidase was purified from a culture filtrate of Mortierella sp. by CM-sephadex C-50, and subsequent Sephadex G-100 column chromatography. The final preparation thus obtained showed a single band on SDS-polyacrylamide gel electrophoresis. The molecular weight was determined to be 56 kDa. $Gal^3Man^4$ ($6^3$-mono-O-${\alpha}$-D-galactopyranosyl-4-O-${\beta}$-D-mannotetraose), $Gal^{2,3}Man_5$ ($6^{2,3}$-di-O-${\alpha}$-D-galactopyranosyl-4-O-${\beta}$-D-mannopentaose), $Gal_2Man_3$ ($6^2$-mono-O-${\alpha}$-D-galactopyranosyl-4-O-${\beta}$-D-mannotriose), $Gal^2Man_6$ ($6^2$-mono-O-${\alpha}$-D-galactopyranosyl-4-O-${\beta}$-D-mannohexaose) and $Gal^2Man_5$ ($6^2$-mono-O-${\alpha}$-D-galactopyranosyl-4-O-${\beta}$-D-mannopentaose), prepared from 3 types of microbial ${\beta}$-mannnanase, were used as substrates. $Gal^3Man_4$ and $Gal^2Man_3$ had a stubbed ${\alpha}$-galactosyl residue on the $2^{nd}$ and $3^{rd}$ mannose from the reducing end of mannotetraose and mannotriose, thus ${\alpha}$-galactosidase showed a preference for stubbed ${\alpha}$-galactosyl residue. ${\alpha}$-Galactosidase hydrolyzed $Gal^3Man_4$ more rapidly than $Gal^2Man_3$. However, ${\alpha}$-galactosidase hardly acted on $Gal^{2,3}Man_5$, $Gal^2Man_6$ or $Gal^2Man_5$. The enzyme hydrolyzed melibiose to galactose and glucose, raffinose to galactose and sucrose, and also stachyose to galactose and raffinose.

Vehicle Detection using Feature Points with Directional Features (방향성 특징을 가지는 특징 점에 의한 차량 검출)

  • Choi Dong-Hyuk;Kim Byoung-Soo
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.42 no.2 s.302
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    • pp.11-18
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    • 2005
  • To detect vehicles in image, first the image is transformed with the steerable pyramid which has independent directions and levels. Feature vectors are the collection of filter responses at different scales of a steerable image pyramid. For the detection of vehicles in image, feature vectors in feature points of the vehicle image is used. First the feature points are selected with the grid points in vehicle image that are evenly spaced, and second, the feature points are comer points which m selected by human, and last the feature points are corner Points which are selected in grid points. Next the feature vectors of the model vehicle image we compared the patch of the test images, and if the distance of the model and the patch of the test images is lower than the predefined threshold, the input patch is decided to a vehicle. In experiment, the total 11,191 vehicle images are captured at day(10,576) and night(624) in the two local roads. And the $92.0\%$ at day and $87.3\%$ at night detection rate is achieved.

Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) (투과전자현미경과 전자후방산란회절을 이용한 AlN의 미세구조 분석)

  • Joo, Young Jun;Park, Cheong Ho;Jeong, Joo Jin;Kang, Seung Min;Ryu, Gil Yeol;Kang, Sung;Kim, Cheol Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.4
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    • pp.127-134
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    • 2015
  • Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

Copyright Protection for Fire Video Images using an Effective Watermarking Method (효과적인 워터마킹 기법을 사용한 화재 비디오 영상의 저작권 보호)

  • Nguyen, Truc;Kim, Jong-Myon
    • KIPS Transactions on Software and Data Engineering
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    • v.2 no.8
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    • pp.579-588
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    • 2013
  • This paper proposes an effective watermarking approach for copyright protection of fire video images. The proposed watermarking approach efficiently utilizes the inherent characteristics of fire data with respect to color and texture by using a gray level co-occurrence matrix (GLCM) and fuzzy c-means (FCM) clustering. GLCM is used to generate a texture feature dataset by computing energy and homogeneity properties for each candidate fire image block. FCM is used to segment color of the fire image and to select fire texture blocks for embedding watermarks. Each selected block is then decomposed into a one-level wavelet structure with four subbands [LL, LH, HL, HH] using a discrete wavelet transform (DWT), and LH subband coefficients with a gain factor are selected for embedding watermark, where the visibility of the image does not affect. Experimental results show that the proposed watermarking approach achieves about 48 dB of high peak-signal-to-noise ratio (PSNR) and 1.6 to 2.0 of low M-singular value decomposition (M-SVD) values. In addition, the proposed approach outperforms conventional image watermarking approach in terms of normalized correlation (NC) values against several image processing attacks including noise addition, filtering, cropping, and JPEG compression.

Experimental Study on Fatigue Characteristics of the Single Spot Welded Joint (점용접재(点熔接材)의 피로(疲勞) 특성(特性)에 관한 실험적(實驗的) 연구(硏究))

  • Chang-Min Suh;Sung-Soo Kang;Nam-Seong Hwang;Yong-Ich Cho
    • Journal of the Society of Naval Architects of Korea
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    • v.29 no.4
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    • pp.214-226
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    • 1992
  • In this paper, the characteristics of fatigue crack growth in the spot welded joint of the same kinds of specimens($HS{\times}HS,\;GA{\times}GAB$) and different kinds of specimens($HS{\times}GA,\;HS{\times}GAB$) which consist of dual phase high strength steel(HS) and monogalvanized steel(GA) were examined with static tension tests and axial tension fatigue tests. Some of the important results are as follows : 1. The divergence of tensile strengths among the same and different kinds of spot welds under the same conditions is comparatively low regardless of the difference of stiffness. 2. At the low load bevel and long life legion, the fatigue crack is initiated near the nugget. However, in the high load level and short life region, it occurs a tittle far from the nugget. 3. It has shown a linear relation between maximum stress Intensity factor, Kmax and fatigue life, $N_f$ among each of the spot welds and has gathered in a narrow band on the log-log graph paper. $Kmax=H{\cdot}{N_f}^{P}$ where H and P are a material constant.

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Performance Evaluation of a Peak Windowing-Based PAPR Reduction Scheme in OFDM Polar Transmitters (OFDM polar transmitter에서 피크 윈도잉 기반의 PAPR 감소기법의 성능평가)

  • Seo, Man-Jung;Shin, Hee-Sung;Im, Sung-Bin;Jung, Jae-Ho;Lee, Kwang-Chun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.12
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    • pp.42-48
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    • 2008
  • Next generation wireless communication systems require RF transceivers that enable multiband/multimode operations. Polar transmitters are known as good candidates for high data rate systems such as EDGE (Enhanced Data Rates for GSM Evolution), WCDMA (Wideband Code Division Multiple Access), and WLAN (Wireless Local Area Network) because they can obtain high efficiency by using efficient switched-mode RF power amplifiers. In this paper, we investigate the performance of a simple peak windowing scheme for the OFDM (Orthogonal frequency Division Multiplexing) polar transmitter, which requires no change of a receiver structure or no additional information transmission. The approach we employed is to apply the peak windowing scheme to the amplitude modulated signals of the polar transmitter to reduce the PAPR (Peak-to-Average Power Ratio). The BER (Bit Error Rate) and EVM (Error Vector Magnitude) performances are measured for various window types and lengths. The simulation results demonstrate that the proposed algorithm mitigates out-of-band distortion introduced by clipping along with PAPR reduction.

Ordinary Magnetoresistance of an Individual Single-crystalline Bi Nanowire (자발 성장법으로 성장된 단결정 Bi 단일 나노선의 정상 자기 저항 특성)

  • Shim, Woo-Young;Kim, Do-Hun;Lee, Kyoung-Il;Jeon, Kye-Jin;Lee, Woo-Young;Chang, Joon-Yeon;Han, Suk-Hee;Jeung, Won-Young;Johnson, Mark
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.166-171
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    • 2007
  • We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.