• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.220-228
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• 1996

CdTe single crystals were grown by vertical Bridgman method using double furnace with two siliconit heating elements. When the peak temperature of the upper furnace was fixed at $1150^{\circ}C$ and that of the lower furnace was $800^{\circ}C$, the temperature gradient was about $22.5^{\circ}C$/cm. The lattice constant $a_0$ was $6.482\AA$ from the X-ray diffraction and the band gap energy obtained from the optical absorption experiment at room temperature was 1.478 eV. PL spectrum showed that the bound exciton emission peak was resolved into ($A^0,X$) (1.5902, 1.5887 eV), ($h\;D^0$) (1.5918 eV) and ($D^0,X$ (1.5928, 1.5932 eV), and we have also calculated binding energy and ionization energy of the neutral donor and acceptor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.6
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• pp.1375-1381
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• 2010

LED(Light Emitting Diode) is an emitting device which energy is same to the bandgap energy of p-type and n-type semiconductor junction. Recently high brightness LED is used in fish-luring light and traffic signal light alternative of normal light bulb, and widely used in the area of display pannel. Moreover nowadays LED has been used as a back light of LCD display. Recently, visible light communication(VLC) using LED, that allow two-way serial data communication between LEDs over a distance of sveral centimeters or meters, has been widely studied in the area of digital information transmission along with illumination and display. In this paper, we present LED communication system and their applications.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.209-215
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• 1997

Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.392-392
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• 2008

나노크기의 반도체 물질은 표면적/부피 비와 그 크기에 의해 광학적, 전기적 특성이 크게 영향을 받는다. 나노크기의 반도체 재료 중 ZnO는 3.37eV의 넓은 에너지 밴드갭을 가지고 있으며, 60meV의 큰 엑시톤(exciton) 결합에너지의 특성을 가지고 있어 UV 영역의 소스로서 가장 활용도가 클것으로 예상된다. 1 차원 ZnO 나노구조는 청색과 자외선 발광소자 및 광전자 소자, 화학적 센서로 활용이 가능하다. whisker, nanowires, norods, nanonail, nanoring 등과 같은 ZnO 나노구조의 형태와 크기는 합성장비와 공정조건에 크게 영향을 받고 서로 다른 광 특성 결과를 나타낸다. ZnO 나노구조의 합성을 위해 다양한 금속 촉매를 이용한 기상-액상-고상(VLS)의 성장 메카니즘이 연구되었다. 그러나 이 방법은 촉매로 사용된 금속이 불순물로 작용하는 결점을 가지고 있다. 최근에는 기판위에 아무런 촉매도 사용하지 않은 ZnO 의 합성에 대해 많은 연구가 진행되고 있다. 그러나 촉매없이 합성된 나노구조의 형태와 성장방향은 초기단계에서 불규칙한 원자배열로 인해 합성상태의 제어 (방향, 형상 등)가 매우 어렵다. MOCVD 장비 금속 촉매를 이용하지 않고도 미량의 Zn 와 $O_2$ 량을 일정하게 조절함으로써 형상 및 방향성을 제어 할 수 있다는 장점을 가지고 있다. 또한 본 연구에 사용된 MOCVD 장비의 경우 추가적인 케리어 가스 유입을 통해 나노막대의 aspect ratio 조절이 가능하다. 본 연구는 MOCVD 장비를 이용해 촉매를 사용하지 않고 1 차원 ZnO 나노막대를 합성하였고, 추가적 케리어 가스 유량을 변화시킴으로써 형태 변화 및 발광특성에 관한 영향을 연구하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.111-111
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• 2008

태양전지는 태양에너지를 직접 전기에너지로 변환시켜주는 광전 소자로서 구조적으로 단순하고 제조 공정도 비교적 간단하지만, 실용화를 위해서는 비용적인 측면이 많은 걸림돌이 되고 있다. 기존의 실리콘 태양전지는 낮은 광흡수율, 고비용임에도 불구하고 가장 많이 활용되고 있는 태양전지 기술이다. 그러나 태양전지의 경제성 향상과 실용화를 위해서는 기존의 실리콘 태양전지 보다 고효율 및 고신뢰도의 박막형 태양전지의 개발이 필요하다. 박막헝 태양전지의 재료로는 비정질 실리콘, 다결정 실리콘. CIGS, CdTe 등이 있다. 그 중에서도 박막형 태양전지에 광흡수층 물질로는 밴드갭 에너지 (l.4eV 부근), 변환 효율, 경제성 등을 고려했을 때 II-VI족 화합물인 CdTe가 가장 적합한 것으로 각광받고 있다. 하지만 아직까지 실리콘 태양전지에 비해 효율이 많이 떨어지는 단점을 가지고 있기 때문에 효율을 더 끌어올리기 위한 연구가 활발히 진행되고 있는 실정이다. 또한 CMP(chemical mechanical polishing) 공정은 반도체 박막 분야뿐만 아니라 물리, 화학 반응의 기초 연구에도 널리 응용이 되는 기술로써, 시료와 연마 패드 사이의 회전마찰에 의한 기계적 연마와 연마제 (abrasive) 에 의한 화학적 에칭으로 박막 표면을 평탄화하는 기술이다. 본 연구에서는 sputtering 법에 의해 증착된 CdTe 박막에 CMP 공정을 적용하여 표면 특성을 개선한 뒤 태양전지 변환 효율과 직접적인 연관성을 가지고 있는 표면 및 광특성의 변화를 CMP 공정 전과 후로 비교하였다. 표면의 변화를 관찰하기 위해서 AFM(atomic forced microscope) 과 SEM(scanning electron microscopy) 을 이용하였으며, 광특성의 비교를 위해서 흡수율과 PL특성을 측정하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.46-53
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• 1998

A new method to form the double structured active layers of a-Si/a-SiN$_{x}$ of polycrystalline thin film transistor is proposed and poly-Si TFTs employed double structure active film are fabricated. Nitrogen ions were added to bottom amorphous silicon active film(a-SiN$_{x}$ ) and pure a-Si film deposition on a-SiN$_{x}$ was followed. The XeCl excimer laser was irradiated to crystallize double structure active film. The grain growth of upper a-Si film was also promoted in the double structured active layers of a-Si/a-SiN$_{x}$ due to the mitigation of solidification process of lower a-SiN$_{x}$ layer. Our experimental results show that the ratio of NH$_3$/SiH$_4$ is required to maintain below 0.11 for the reduction of contact resistance of n$^{+}$ poly-SiN$_{x}$ layer.r.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.837-840
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• 2015

Graphene is a single layer of carbon material which shows very high electron mobility, so many kinds of research on the devices using graphene layer have been performed so far. Graphene material is adequate for high frequency and fast operation devices due to its higher mobility. In this research, the actual graphene layer is evaluated using RT-CVD method which can be available for mass production. The mobility of $7,800cm^2/Vs$ was extracted, that is more than 7 times of that in silicon substrate. The graphene transistor model having no band gap is evaluated using both of pMOS and nMOS based on the measured mobility values. And then the response of graphene transistor model regarding to gate length and width is examined.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.239-244
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• 2013

This paper presents a design of the CMOS LDO regulator with a UVLO protection function for a high speed PMIC. Proposed LDO regulator circuit consists of a BGR reference circuit, an error amplifier and a power transistor and so on. UVLO block between the power transistor and the power supply is added for a low input protection function. Also, UVLO block showed normal operation with turn-off voltage of 2.7V and turn-on voltage of 4 V in condition of 5 V power supply. Proposed circuit generated fixed 3.3 V from a supply of 5V. From SPICE simulation results using a $1{\mu}m$ high voltage CMOS technology, simulation results were 5.88 mV/V line regulation and 27.5 uV/mA load regulation with load current 0 mA to 200 mA.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.12
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• pp.39-48
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• 2001

We have studied the design of the photonic bandgap (PBG) structure on the microstrip line that can effectively control the fractional bandwidth of the passband formed in the stopband by adding the stub in the cell of the microstrip PBG structure. As the length of the stub increases, the cutoff frequency and the center frequency of the stopband are decreased, while the bandwidth of the stopband is increased. We have also found that the fractional bandwidth of the passband formed in stopband by the introduction of defect decreases as the stub length is increased. These results mean that adding the stub in the normal PBG structure is an effective way to control the fractional bandwidth. As an application example, we have implemented a microwave duplexer using the proposed structure.