• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.94-99
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• 2010

This paper presents a charge pump architecture for correcting the current mismatch due to the PVT variation. In general, the current mismatch of the charge pump should be minimized to improve the phase noise and spur performance of the PLL. In order to correct the current mismatch of the charge pump, the current difference is detected by the replica charge pump and fed back into the main charge pump. This scheme is very simple and guarantees the high accuracy compared with the prior works. Also, it shows a good dynamic performance because the mismatch is corrected continuously. It is implemented in 0.13um CMOS process and the die area is $100{\mu}m\;{\times}\;160{\mu}m$. The voltage swing is from 0.2V to 1V at supply voltage of 1.2V. The charging and discharging currents are $100{\mu}A$, respectively and the current mismatch due to the PVT variation is less than 1%.

• Journal of the Korean Electrochemical Society
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• v.22 no.1
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• pp.36-42
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• 2019

A macroporous Sn thick film as a high capacity negative electrode for a lithium ion secondary battery was prepared by using a chemical etching method using nitric acid for a Sn film having a thickness of $52{\mu}m$. The porous Sn thick film greatly reduced the over-voltage for the alloying reaction with lithium by the increased reaction area. At the same time. The porous structure of active Sn film plays a part in the buffer and reduces the damage by the volume change during cycles. Since the porous Sn thick film electrode does not require the use of the binder and the conductive carbon black, it has substantially larger energy density. As the concentration of nitric acid in etching solution increased, the degree of the etching increased. The etching of the Sn film effectively proceeded with nitric acid of 3 M concentration or more. The porous Sn film could not be recovered because the most of Sn was eluted within 60 seconds by the rapid etching rate in the 5 M nitric acid. In the case of etching with 4 M nitric acid for 60 seconds, the appropriate porous Sn film was formed with 48.9% of weight loss and 40.3% of thickness change during chemical acid etching process. As the degree of etching of Sn film increased, the electrochemical activity and the reversible capacity for the lithium storage of the Sn film electrode were increased. The highest reversible specific capacity of 650 mAh/g was achieved at the etching condition with 4 M nitric acid. The porous Sn film electrode showed better cycle performance than the conventional electrode using a Sn powder.