• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.49-55
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• 2005

In this paper, the phase locked harmonic oscillator(PLHO) using the analog PLL(Phase Locked Loop) is designed and implemented for a wireless LAN system. The harmonic oscillator is consisted of a ring resonator, a varactor diode and a PLL circuit. Because the fundamental fiequency of 8.5 GHz is used as the feedback signal for the PLL and the 2nd harmonic of 17.0 GHz is used as the output, a analog frequency divider for the phase comparison in the PLL system can be omitted. For the simple PLL circuit, the SPD(Sampling Phase Detector) as a phase comparator is used. The output power of the phase locked harmonic oscillator is 2.23 dBm at 17 GHz. The fundamental and 3rd harmonic suppressions are -31.5 dBc and -29.0 dBc, respectively. The measured phase noise characteristics are -87.6 dBc/Hz and -95.4 dBc/Hz at the of offset frequency of 1 kHz and 10 kHz from the carrier, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.152-158
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• 2004

A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The designed frequency synthesizer consists of a 1.75 GHz master oscillator - which also operates as a harmonic generator - and a 10.5 GHz slave oscillator. A 1.75 GHz master oscillator based on PLL technique used two transistors - one constitutes the active part of VCO and the other operates as a buffer amplifier as well as harmonic generator. The first stage operates a fixed locked oscillator and using the BJT transistor whose cutoff frequency is 45 GHz, the second stage is designed, operating as a harmonic generator. The 6th harmonic which is produced from the harmonic generator is injected into the following slave oscillator which also behaves as an amplifier having about 45 dB gain. The realized frequency synthesizer has a 7.4 V/49 mA, -0.5 V/4 mA of the low DC power consumption, 4.53 dBm of output power, and a phase noise of -95.09 dBc/Hz and -108.90 dBc/Hz at the 10 kHz and 100 kHz offset frequency, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.6
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• pp.539-545
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• 2016

In this paper, a novel coupled C type resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator. Oscillator using proposed shorted coupled C type resonator is designed, it has improved phase noise characteristics. At the fundamental frequency of 9.8GHz, 4.87dBm output power and -84.7 dBc@100kHz phase noise have been measured for oscillator with shorted coupled C type resonator. Next, we designed voltage controlled oscillator using proposed shorted coupled C type resonator with varactor diode. The VCO has 33.8MHz tuning range from 9.7807GHz to 9.8145GHz, and phase noise characteristic is -115~-112.5dBc/Hz@100KHz. Due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.7
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• pp.77-80
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• 2008

In this paper, low phase noise VCO using novel compact microstrip spiral resonator is proposed. A spiral resonator has super compact dimension, low insertion losses in the passband and high level of rejection in the stopband with sharp cutoff and a large coupling coefficient value, which makes a high Q value, and has reduced the phase noise. To increase the tuning range of VCO, varactor diode has been connected at the tunable negative resistance in VCO. This VCO has presented the oscillation frequency of $5.686{\sim}5.841GHz$, harmonics -29.83 dBc and phase noise of $-115.16{\sim}-115.17dBc/Hz$ at the offset frequency of 100 KHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.62-66
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• 2010

In this article, a oscillator at X-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve Ihe phase noise and output power. The proposed oscillator is required low phase noise and high output power for the high performance frequency synthesizer. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. This character makes phase noise excellent. The oscillator using DHMR is oscillated in X-band so as to apply frequency synthesizer of radar systems. The output power is 4.33 dBm and the phase noise is -108 dBc/Hz at 100 kHz offset of carrier frequency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.513-518
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• 2010

Improvement of phase noise characteristics in a different approach of HEMT VCO (Voltage Controlled Oscillator) with coupled microstrip lines to tune the oscillating frequency is investigated. Two HEMT VCOs of 9.8GHz are manufactured in the same configuration except for the frequency tuning circuit in order to empirically demonstrate the phase noise reduction. Experimental result shows that phase noise reduction can be enhanced 8dBc/Hz at 100KHz offset frequency from carrier by frequency tuning circuit with coupled microstrip lines over the conventional VCO.

• Journal of IKEEE
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• v.16 no.2
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• pp.121-126
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• 2012

In this paper, a push-push VCDRO (Voltage Controlled Dielectric Resonator Oscillator) with a modified frequency tuning structure is investigated. The push-push VCDRO designed at 16GHz is manufactured using a LTCC (Low Temperature Co-fired Ceramic) technology to reduce the circuit size. The frequency tuning structure is embedded in intermediate layer of A6 substrate by an advantage of LTCC process. Experimental results show that the fundamental frequency suppression is above 30dBc, the frequency tuning range is 0.43MHz over control voltage of 0 to 12V, and phase noise of push-push VCDRO presents a good performance of -103dBc/Hz at 100KHz offset frequency from carrier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.68-72
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• 2004

The integrated voltage-controlled-oscillator(VOC) operating at 1.75 ㎓ is designed using the InGaP/GaAs HBT process. The proposed noise removal circuit and FR-4 substrate structure in this letter show the better characteristic of the phase noise and reduce the size of the VCO. The frequency tuning range of the VCO is about 200 ㎒ and the phase noise at 120 ㎑ offset is -119.3 ㏈c/㎐. The power consumption of the VCO core is 11.2 ㎽ at 2.8 V supply voltage and the output power is -2 ㏈m. The calculated figure of merit(FOM) is 191.7, which shows the best performance compared with the previous FET or HBT VCO.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.9
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• pp.1277-1283
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• 2013

In this paper, a novel voltage controlled oscillator(VCO) using CSRR loaded microstrip line for X-band RADAR is proposed. Using the microstrip line loaded CSRR inserted between the oscillator and buffer to the filter, the harmonic suppression has been improved. The measured results of the fabricated oscillator shows that its oscillation frequencies are from 9.28 to 9.39GHz according to the tuning voltage 0~10V, its output power level are about 16.6dBm at 9.35GHz. Compared with VCO using the conventional VCO, VCO using CSRR loaded microstirp, the harmonic suppression characteristic has been improved in 10.4dB

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.787-792
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• 2004

This paper shows the design, fabrication and performance of oscillator appled to 5.5GHz RF module for local wireless communication system. Super low noise HJ FET of NE3210S01 is used to obtain a good phase noise Performance. The design Parameters for the optimum operating performance are simulated with ADS simulation. The measured out Power is 10 dBm at 5.5GHz, the second harmonic suppression -31 dBc, and the phase noise characteristics -98.83 dBc at 100kHz offset frequency, respectively. This implemented oscillator is available to local wireless Communication system.