• Title/Summary/Keyword: 발광특성

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n-채널 OLED 구동 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 OLED 화소회로 (An OLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel OLED·Driving TFT)

  • 정훈주
    • 한국정보전자통신기술학회논문지
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    • 제15권3호
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    • pp.205-210
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    • 2022
  • 본 논문은 OLED 구동 박막 트랜지스터의 문턱전압 변동에 의한 AMOLED 디스플레이의 휘도 불균일도를 개선하기 위해 n-채널 박막 트랜지스터만을 사용한 새로운 OLED 화소회로를 제안하였다. 제안한 OLED 화소회로는 6개의 n-채널 박막 트랜지스터와 2개의 커패시터로 구성하였다. 제안한 OLED 화소회로의 동작은 커패시터 초기화 구간, OLED 구동 박막 트랜지스터의 문턱전압을 감지하는 구간, 영상 데이터 전압 기입 구간 및 OLED 발광 구간으로 구성되어 있다. SmartSpice 시뮬레이션 결과, OLED·구동 박막 트랜지스터의 문턱전압이 1.5±0.3 V 변동 시 제안한 OLED 화소회로는 OLED 전류 1 nA에서 최대 전류 오차가 5.18 %이고 OLED 음극 전압이 0.1 V 상승 시 제안한 OLED 화소회로가 기존 OLED 화소회로보다 OLED·전류 변화가 매우 적었다. 그러므로, 기존 OLED 화소회로보다 제안한 화소회로가 문턱전압 변동 및 OLED 음극 전압 상승에 뛰어난 보상 특성을 가진다는 것을 확인하였다.

페로브스카이트 할로겐화물 박막의 발광 측정 조건에 따른 특성 분석 (Photoluminescence Characterization of Halide Perovskite Films according to Measuring Conditions)

  • 조현아;이승민;노준홍
    • 한국재료학회지
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    • 제32권10호
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    • pp.419-424
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    • 2022
  • Halide perovskite solar cells (PSCs) have improved rapidly over the past few years, and research on the optoelectrical properties of halide perovskite thin films has grown as well. Among the characterization techniques, photoluminescence (PL), a method of collecting emitted photons to evaluate the properties of materials, is widely applied to evaluate improvements in the performance of PSCs. However, since only photons emitted from the film in the escape cone are included, the photons collected in PL are a small fraction of the total photons emitted from the film. Unlike PSCs power conversion efficiency, PL measuring methods have not been standardized, and have been evaluated in a variety of ways. Thus, an in-depth study is needed of the methods used to evaluate materials using PL spectra. In this study, we examined the PL spectra of the perovskite light harvesting layer with different measurement protocols and analyzed the features. As the incident angle changed, different spectra were observed, indicating that the PL emission spectrum can depend on the measuring method, not the material. We found the intensity and energy of the PL spectra changes were due to the path of the emitted photons. Also, we found that the PL of halide perovskite thin films generally contains limited information. To solve this problem, the emitted photons should be collected using an integrating sphere. The results of this study suggest that the emission spectrum of halide perovskite films should be carefully interpreted in accordance with PL measuring method, since PL data is mostly affected by the method.

ZnS:Cu-PDMS 기반 기계 발광 유연 나노 복합체의 CNT 혼입에 따른 전기 및 광학적 특성 향상에 대한 연구 (Enhancing Electrical and Optical Properties in Mechanoluminescent Flexible Nanocomposite Based on ZnS:Cu-PDMS by Mixing CNTs)

  • 김태민;김현우;윤종혁;김미희;전다빈;최대철;이성남
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.531-535
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    • 2023
  • Mechanoluminescence (ML) is a phenomenon where the application of mechanical force to ML materials generates an electric field and produces light, holding significant promise as an eco-friendly technology. However, challenges in commercializing ML technology has arisen due to its low brightness and short luminous lifetime. To address this, in this work, we enhance ML efficiency by mixing carbon nanotubes (CNTs) into a ZnS: Cu embedded in a polydimethylsiloxane composite ML device. The inclusion of CNTs boosts ML intensity by 98% compared to devices without CNTs, as the increasing CNT fraction elevates conductivity, thereby amplifying ML intensity. However, this increase in CNT fraction also leads to enhanced light absorption within the device. Consequently, we observe a trend where ML intensity rises initially but declines beyond a CNT fraction of 0.0015 wt%. Based on these findings, we anticipate that our research will make valuable contributions to the advancement of electrical powerless mechanoluminescent technology.

열처리 온도가 SrWO4:Sm3+ 박막의 구조, 표면, 발광 특성에 미치는 효과 (Effects of Annealing Temperature on the Structural, Morphological, and Luminescent Properties of SrWO4:Sm3+ Thin Films)

  • 조신호
    • 한국전기전자재료학회논문지
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    • 제36권6호
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    • pp.582-587
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    • 2023
  • The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO4:Sm3+ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO4:Sm3+ thin films. The crystal structure of the as-grown SrWO4:Sm3+ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO4:Sm3+ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO4:Sm3+ thin films can be controlled by varying annealing temperature.

Pr6O11의 함량 및 열처리 조건에 따른 YPO4:Pr3+ 형광체의 발광 특성 연구 (A Study on the Luminescent Characteristics of YPO4:Pr3+ Phosphor by the Content Ratio of Pr6O11 and Calcination Temperature)

  • 김민준;이성의
    • 한국전기전자재료학회논문지
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    • 제37권1호
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    • pp.68-73
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    • 2024
  • In this study, the praseodymium-doped yttrium phosphate (YPO4:Pr3+) powder, which is well known for its high luminescent efficiency, and long life in the UV range, was synthesized with various content ratios of Pr6O11 and calcination temperature. Crystal structure and luminescent properties of various phosphor powders based on different concentrations and calcination conditions were characterized by XRD (X-Ray Diffraction) and PL (photoluminescence) spectrometers. From the XRD analysis, the structure of YPO4:Pr3+ which is calcinated at 1,200℃ was stable tetragonal phase and crystal size was calculated about 25 nm by Scherrer equation. PL emission of YPO4:Pr3+ with a different content ratio of Pr6O11 by excitation λexc=250 nm shows that 0.75 mol% phosphor powder has maximum PL intensity and PL decreases with the increase of the ratio of Pr6O11 up to 1.25 mol% which is caused by changes of crystallinity of phosphor powders. With increasing dopant ratio, photo-luminescence Emission decreases due to Concentration quenching, which is commonly observed in phosphors. Currently, 0.75 mol% is considered the optimal doping concentration. A hybrid ultraviolet-emitting device incorporating YPO4:Pr3+ fluorescent material with plasma discharge was fabricated to enhance UV germicidal effects while minimizing ozone generation. UV emission from the plasma discharge device was shown at about 200 nm and 350 nm which caused additional emission of the regions of 250 nm, 315 nm, and 370 nm from the YPO4:Pr3+ phosphor.

라디오파 마그네트론 스퍼터링으로 성장한 녹색 발광 CaNb2O6:Tb3+ 박막의 특성 (Properties of Green-Emitting CaNb2O6:Tb3+ Thin Films Grown by Radio-Frequency Magnetron Sputtering)

  • 김선경;조신호
    • 한국재료학회지
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    • 제33권10호
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    • pp.400-405
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    • 2023
  • Tb3+-doped CaNb2O6 (CaNb2O6:Tb3+) thin films were deposited on quartz substrates at a growth temperature of 300 ℃ using radio-frequency magnetron sputtering. The deposited thin films were annealed at several annealing temperatures for 20 min and characterized for their structural, morphological, and luminescent properties. The experimental results showed that the annealing temperature had a significant effect on the properties of the CaNb2O6:Tb3+ thin films. The crystalline structure of the as-grown CaNb2O6:Tb3+ thin films transformed from amorphous to crystalline after annealing at temperatures greater than or equal to 700 ℃. The emission spectra of the thin films under excitation at 251 nm exhibited a dominant emission band at 546 nm arising from the 5D47F5 magnetic dipole transition of Tb3+ and three weak emission bands at 489, 586, and 620 nm, respectively. The intensity of the 5D47F5 (546 nm) magnetic dipole transition was greater than that of the 5D47F6 (489 nm) electrical dipole transition, indicating that the Tb3+ ions in the host crystal were located at sites with inversion symmetry. The average transmittance at wavelengths of 370~1,100 nm decreased from 86.8 % at 700 ℃ to 80.5 % at an annealing temperature of 1,000 ℃, and a red shift was observed in the bandgap energy with increasing annealing temperature. These results suggest that the annealing temperature plays a crucial role in developing green light-emitting CaNb2O6:Tb3+ thin films for application in electroluminescent displays.

BaZrO3:Eu3+ 적색 형광체의 발광과 농도 소광 특성 (Luminescence and Concentration Quenching Properties of BaZrO3:Eu3+ Red-Emitting Phosphors)

  • 응웬티김난;조신호
    • 한국전기전자재료학회논문지
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    • 제37권3호
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    • pp.274-279
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    • 2024
  • Eu3+-doped BaZrO3 (BaZrO3:Eu3+) phosphor powders were prepared using a solid-state reaction by changing the molar concentration of Eu3+ within the range of 0.5 to 30 mol%. Irrespective of the molar concentration of Eu3+ ions, the crystal structures of all the phosphors were cubic. The excitation spectra of BaZrO3:Eu3+ phosphors consisted of an intense broad band centered at 277 nm in the range of 230~320 nm. The emission spectra were composed of a dominant orange band at 595 nm arising from the 5D07F1 magnetic dipole transition of Eu3+ and two weak emission bands centered at 574 and 615 nm, respectively. As the concentration of Eu3+ increased from 0.5 to 10 mol%, the intensities of all the emission bands gradually increased, approached maxima at 10 mol% of Eu3+ ions, and then showed a decreasing tendency with further increase in the Eu3+ ions due to the concentration quenching. The critical distance between neighboring Eu3+ ions for concentration quenching was calculated to be 11.21 Å, indicating that dipole-dipole interaction was the main mechanism of concentration quenching of BaZrO3:Eu3+ phosphors. The results suggest that the orange emission intensity can be modulated by doping the appropriate concentration of Eu3+ ions.

Benzobisoxazole 분자를 활용한 치환기 효과의 표준화 (Standardization of Substituent Effects based on Benzobisoxazole Molecule)

  • 양창혁;정기호;고경철
    • 대한화학회지
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    • 제68권4호
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    • pp.185-190
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    • 2024
  • 최근에 benzobisoxazole (BBO) 분자가 HOMO와 LUMO 에너지 준위를 각각 독립적으로 조절하는데 사용될 수 있다는 연구가 보고되었다. 이 연구에서는 이 흥미로운 BBO 분자의 특성을 치환기에 따른 치환기 효과를 정량적으로 조사하는데 이용해보았다. BBO 분자를 중심으로 π-컨쥬게이션 길이를 확장시켜 4개의 BBO 모델 시스템을(1BBO, 2BBO, 3BBO, 4BBO) 디자인하고 제안했다. 치환은 두 방향(x-축, y-축), 총 15개의 치환기가 고려되었다. DFT 방법으로 계산된 x-축 치환 LUMO 에너지 준위와 y-축 치환 HOMO 에너지 준위 사이의 강한 상관관계로부터, BBO 모델 시스템들이 치환기 효과를 표준화 할 수 있음을 밝혔다. 또한 3BBO 시스템의 x-축 치환 HOMO 에너지 준위가 치환기 효과의 순서를 규정하는데 가장 적합한 것을 입증했다. 우리가 제안한 방법은 어떤 임의의 치환기에 대한 치환기 효과를 예측하는데 활용 될 수 있고, 유기 센서나 유기 발광 다이오드 개발에 활용될 수 있다.

고분자광섬유용 광통신 및 센서 모듈 (Optical Communication and Sensing Modules for Plastic Optical Fibers)

  • 박병욱;윤도영;김동식
    • Korean Chemical Engineering Research
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    • 제47권5호
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    • pp.558-564
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    • 2009
  • 고분자 광섬유(POF)는 유리광섬유에 비하여 경량성, 저가 그리고 다루기 쉬운 장점을 가지고 있다. 그러나 상대적으로 높은 전송손실과 낮은 대역특성으로 인하여 랜과 같은 단거리 네트워킹에 대한 사용이 적합하다. 전송손실을 낮게 하기 위한 고분자물질의 합성공정과 유연한 고분자광섬유의 활용을 보다 넓히기 위한 다양한 연구들이 진행되고 있다. 본 연구에서는 저잡음의 POF 모듈들이 개발되었으며, 이를 위하여 저잡음 증폭기와 저가의 650 nm의 발광다이오드(LED: Light Emitting Diode)가 최적화되었다. 광통신과 센서용 POF 모듈의 동적특성을 나타내기 위하여, 화상전송모듈, 광전송 속도측정모듈, RS-232용 광전송기와 음성전송모듈을 제작하여 그들의 신호특성을 평가하였다. 광전송속도의 측정에 있어서는 빠르고 간단한 측정으로서 모듈이 바로 사용될 수 있는 것으로 보여진다. 또한, 아날로그 증폭기, LED와 포토다이오드(PD: Photo Diode) 등을 활용하여, 소리와 화상의 전송은 POF를 통하여 최대 60 m까지 가능한 것으로 확인되었다. 또한 비례적분미분제어에서 확인한 실시간 데이터 전송효과는 산업용 공장의 설계와 제어에 있어서 매우 가치가 있을 것으로 고려된다.

고효율 OLED 제작을 위한 플라즈마 조건 변화에 따른 ITO 특성 분석 (Characteristic Analysis of ITO by Variation of Plasma Condition to Fabricate OLED of High Efficiency)

  • 김중연;강명구
    • 전자공학회논문지 IE
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    • 제44권2호
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    • pp.8-13
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    • 2007
  • 본 논문에서는 고효율의 유기발광소자 제작을 위해 플라즈마 조건 변화에 따른 ITO 특성을 분석하였다. $N_2$$O_2$ 가스로 RF 플라즈마 출력은 100 W, 200 W, 400 W로 가스압력은 12 mTorr, 120 mTorr로 변화실험을 하였다. $N_2$ 가스를 이용하여 플라즈마 처리한 ITO의 일함수는 $4.88{\sim}5.07$ eV의 값을 나타내었고 $O_2$ 가스를 이용하여 플라즈마 처리한 ITO는 $4.85{\sim}4.97$ eV의 일함수를 나타내었다. $N_2$ 가스에서 가스의 압력이 120 mTorr이면서 플라스마 출력이 200 W의 조건에서 RF 플라즈마 처리한 ITO의 특성이 우수하였다. ITO 표면의 rms roughness는 AFM 이미지에서 계산하여 나타낸 수치로써 $N_2$$O_2$ 가스가 주입된 플라즈마로 처리된 ITO는 플라즈마 출력이 200 W일 때 각각 $25.2\;{\AA}$$30.5\;{\AA}$로 나타났으며 플라즈마 처리되지 않은 ITO는 $44.5\;{\AA}$이었다. ITO 박막의 투과율 측정에서는 $N_2$$O_2$ 가스의 압력을 변화시켜도 ITO의 투과율은 거의 변동이 없었다.