• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Journal of Bio-Environment Control
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• v.24 no.2
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• pp.106-112
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• 2015

The objective of this study was to examine the growth reaction of strawberry plants to the mixed red and blue LED sources and their installation method. The artificial light sources were : LED PAR(PPFD $2{\sim}4{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$), LED BAR(PPFD $100{\sim}120{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) and incandescent(PPFD $2{\sim}4{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$) lamp. The lighting treatment was started at the first cluster flowering period as a night breaking lighting and was applied during 3 hours, between 22:00 and 01:00 every day. Plant height and leafstalk length were longer in plants treated with incandescent lamp, where as fresh and dry weight of shoot were heavier in LED PAR compared to incandescent lamp treatment. LED PAR treatment also resulted in the largest leaf area, chlorophyll content was increased by $0.36mg{\cdot}g^{-1}$ after 60 days from the starting of the artificial lighting. According to the experimental results application of 16W LED PAR lamps and W-type installation method can improve light environment in strawberry lighting culture.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.359-367
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• 1999

CsI(Li) single crystals doped with 0.02, 0.1, 0.2 and 0.3 mole% lithium as an activator were grown by Czochralski method. The lattice structure of grown CsI(Li) single crystal was bcc, its lattice constant was $4.568\;{\AA}$. The absorption edge of CsI(Li) single crystal was 245 nm, and the spectral range of luminescence was $300{\sim}600\;nm$, its maximum luminescence intensity appeared at 425 nm. The energy resolutions of CsI(Li) single crystal doped with 0.2 mole% lithium were 14.5% for $^{137}Cs$(662 keV), 11.4% for $^{54}Mn$(835 keV) and 17.7% and 7.9% for $^{22}Na$(511 keV and 1275 keV), respectively. The relation formula of $\gamma$-ray energy versus energy resolution was ln (FWHM%) = -0.893lnE + 8.456 and energy calibration formula was ${\log}E_r=1.455\;{\log}(ch.)-1.277$. The phosphorescence decay time of CsI(Li) crystal doped with 0.2 mole% lithium was 0.51 s at room temperature, and its time resolution measured by CFT(constant-fraction timing method) was 9.0 ns.

• Journal of the Korean Society of Radiology
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• v.15 no.3
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• pp.391-399
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• 2021

Eu²⁺ doped polyphosphate NaSr(PO₃)₃ blue-emitting phosphors were synthesized by the conventional solid state method in a reductive atmosphere. The phase formation of NaSr(PO₃)₃ phosphors were characterized by using the X-ray powder diffraction (XRD) measurement. The photoluminescence emission and excitation spectra of the NaSr(PO₃)₃:Eu²⁺ phosphor, and decay curves were measured. Under the near-UV excitation, the phosphor exhibits a band emission around 420 nm assigned to the 4f⁶5d→f7(8S^7/2) transition of Eu²⁺. The temperature dependent emission spectra and decay curves were measured to elevate the thermal properties of the Eu²⁺ doped phosphors. The as-prepared NaSr(PO₃)₃:Eu²⁺ phosphors show a strong temperature dependent performance, which can serve as a promising temperature sensor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.