• Title/Summary/Keyword: 반사 전자기에너지

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Electronic Spectroscopy of Protonated Tyr-Ala Dipeptide Ions (Tyr-Ala 펩타이드 이온의 전자전이 분광 연구)

  • Choi, Chang-Min;Kwon, Jang-Sook;Kim, Hwan-Jin;Yoon, Tae-Oh;Yang, Min-O;Kim, Nam-Joon
    • Journal of the Korean Chemical Society
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    • v.51 no.4
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    • pp.318-323
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    • 2007
  • Electronic photofragmentation spectrum of protonated tyrosine-alanine dipeptide ions(YAH+) was obtained in the wavenumber region of 34500~36700 cm-1 using a quadrupole ion trap time-of-flight mass spectrometer (QIT-TOFMS). YAH+ ions were produced by electrospray ionization, stored in the ion trap and then irradiated by ultraviolet laser pulses which induced photofragmentation of the ions. The electronic photofragmentation spectrum was obtained by monitoring the photodissociation yields of YAH+ ions as a function of the laser wavelength. The spectrum exhibited two broad peaks which were assigned as S1 and S2 by theoretical calculations using a time-dependent density functional method. The broad widths of the peaks in the spectrum were explained by the overlaps of the peaks originated from various conformers of YAH+ ions which were present in the gas phase at room temperature and also by the contributions of the hot bands.

광대역 및 전방향 높은 투과도를 갖는 사파이어 나노구조 제작 및 광학적 특성연구

  • Kim, Myeong-Seop;Im, Jeong-U;Go, Yeong-Hwan;Jeong, Gwan-Su;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.338-338
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    • 2012
  • 사파이어 ($Al_2O_3$)는 높은 밴드갭 에너지 (~19.5 eV)를 가진 물질로서 우수한 내마모성, 강도, 전기 절연성 및 안정한 화학적 특성을 갖고 발광다이오드 기판, 보석재료 등 각종 산업 및 기술적 분야에서 널리 사용되고 있다. 특히, 플립칩 발광다이오드 구조의 경우 광추출효율을 향상시키기 위해 높은 투과도를 갖는 사파이어 기판이 요구되어 왔으며, 지금까지 건식/습식식각방법을 이용한 사파이어 표면에 마이크로 크기의 심한 거칠기 또는 요철이 형성된 나노크기의 격자구조를 형성시키는 연구가 진행되어 오고 있다. 그 중, 나노 크기의 격자구조는 공기에서 반도체 기판까지 선형적인 유효굴절률 분포를 갖기 때문에 표면에서 생기는 Fresnel 반사 손실을 줄일 수 있다. 이러한 구조를 형성하기 위해서는 식각 마스크가 필요한데, 형성 방법으로 레이저 간섭 리소그래피, 전자빔 리소그래피, 나노임프린트 리소그래피 등이 있으나, 비싼 가격과 복잡한 공정 절차 등의 단점을 지니고 있다. 따라서 본 연구에서는 식각 마스크 패턴을 위해, 보다 저렴하고 간단한 실리카 나노구 및 열적응집 금 나노 입자를 이용하였다. 양면 폴리싱 c-plane 사파이어 기판을 사용하였고, 단일 층의 주기적인 실리카 나노구를 기판 표면에 스핀코팅에 의해 도포한 후 유도결합플라즈마 식각 장비를 이용하여 식각하여 주기적인 패턴을 갖는 렌즈모양의 격자구조를 형성하였다. 그리고 주기적으로 형성된 격자 위에 열 증착기를 이용하여 금 박막을 증착한 후 급속열적어닐닝(rapid thermal annealing)을 이용하여 열처리함으로써 비주기적인 금 나노입자를 형성시켰다. 형성된 금 나노패턴을 이용하여 동일한 조건으로 식각함으로써 광대역 및 전방향성 높은 투과도를 갖는 원뿔 모양의 사파이어 나노구조를 제작하였다. 제작된 샘플의 패턴 및 식각 형상은 전자현미경을 사용하여 관찰하였으며, UV-vis-NIR 분광광도계 (spectrophotometer)를 사용하여 투과율을 측정하였다. 렌즈 모양 표면 위에 원뿔모양의 나노구조를 갖는 사파이어 기판은 일반적인 사파이어 기판보다 향상된 투과율 특성을 보였다.

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Development of Passive Millimeter-wave Security Screening System (수동 밀리미터파 보안 검색 시스템 개발)

  • Yoon, Jin-Seob;Jung, Kyung Kwon;Chae, Yeon-Sik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.7
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    • pp.138-143
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    • 2016
  • The designed and fabricated millimeter-wave security screening system receives radiation energy from an object and a human body. The imaging system consist of sixteen array antennas, sixteen four-stage LNAs, sixteen detectors, an infrared camera, a CCD camera, reflector, and a focusing lens. This system requires high sensitivity and wide bandwidth to detect the input thermal noise. The LNA module of the system has been measured to have 65.8 dB in average linear gain and 82 GHz~102 GHz in bandwidth to enhance the sensitivity for thermal noise, and to receive it over a wide bandwidth. The detector is used for direct current (DC) output translation of millimeter-wave signals with a zero bias Schottky diode. The lens and front-end of the millimeter-wave sensor are important in the system to detect the input thermal noise signal. The frequency range in the receiving sensitivity of the detectors was 350 to 400 mV/mW at 0 dBm (1 mW) input power. The developed W-band imaging system is effective for detecting and identifying concealed objects such as metal or plastic.

Research on Material Components and Production Method for Metal Bound Rim of 'Bowl, White Porcelain with Impressed Floral Design and Sliver Bound Rim' and 'Bowl, White Porcelain with Silver Bound Rim' (청백자인각화훼문은구완(靑白磁印刻花卉文銀鉤盌)과 백자은구대접(白磁銀鉤大楪)의 금속 테두리 재질 성분 및 제작 방법 연구)

  • Byun, Sungmoon;Hwang, Hyunsung
    • Conservation Science in Museum
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    • v.9
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    • pp.1-15
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    • 2008
  • We observed the section and microstructure by Scanning Electron Mirrorscope (SEM) for 4 'Bowls, white porcelain with impressed floral design and sliver bound rim' and 1 'Dish, white porcelain with sliver bound rim', which was manufactured by reverse firing and metal bound rim was wrapped to the part of not being spread glaze at inlet, in Jingdezhen white porcelains, the relics dug from the seabed of Shinan conserved in National Museum of Korea, and found that the ingredient of metal rim was not silver but tin as a result of measuring by BEI of Energy Dispersive Spectroscopy (EDS). And as a result of survey with Fourier transform infrared spectroscopy(FT-IR) for checking the method of joining metal rim of mouth part, it was found that joining was made with materials made of lacquer.

Growth of Ti on Si(111)-)-$7{\times}7$ Surface and the Formation of Epitaxial C54 $TiSi_2$ on Si(111) Substrate (Si(111)-$7{\times}7$ 면에서 Ti 성장과 C54 $TiSi_2$/Si(111) 정합 성장에 관하여)

  • Kun Ho Kim;In Ho Kim;Jeoung Ju Lee;Dong Ju Seo;Chi Kyu Choi;Sung Rak Hong;Soo Jeong Yang;Hyung Ho Park;Joong Hwan Lee
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.67-72
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    • 1992
  • The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

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