• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.59-63
• /
• 2003

체적 음향파 공진기(Film bulk acoustic resonator, FBAR)는 2~10 Ghz 대역의 차세대 이동 통신용 구현에 필수적인 부품이기 때문에 국내외에서 활발한 연구가 진행되고 있다. 본 논문에서는 FBAR 소자 제조를 위한 연구에서 원자층 증착(Atomic layer deposition, ALD) 방법에 의한 ZnO buffer layer 위에 스퍼터링 방법을 이용한 2-step 방법을 사용하여 제조하였다. ALD를 이용한 ZnO buffer layer는 diethylzinc(DEZn)/$H_2O$를 순차적으로 주입하여 증착하였다. 이 때 두 원료물질 사이에 고순도 Ar 가스를 purge gas로 사용하였다. 원료의 주입시간은 1초, 원료간 purge 시간은 23 초로 하고 증착하였다. 2-step 방법을 이용할 경우, 스퍼터링 방법만을 이용하였을 때 보다 우수한 c-축 배향성 및 박막의 표면형상이 관찰되었다. 2-step 방법을 FBAR 소자 제작에 적용할 경우 보다 우수한 특성의 공진기를 제작할 수 있을 것으로 기대된다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.68-77
• /
• 2003

TFT-LCD 모니터 및 TV의 핵심부품인 TFT/Color Filter를 제조하는 공장라인에서 제품의 품질에 중요한 역할을 하는 것은 유리기판에 TFT와 Color Filter을 형성시키는 노광공정(Exposure)이다. 이러한 TFT/Color Filter를 생산하는 공정내에서 노광기는 핵심기술이므로 진동에 대하여 엄격하게 관리되어지고 있다. 그리고, TV 및 TFT-LCD 모니터의 크기가 큰 것을 사용자의 요구로 TFT/Color Filter 생산 공장은 세대가 거듭될수록 사용되어지는 유리기판의 크기도 따라서 커지고 있다. 이러한 유리기판의 크기 증가는 공정라인에서 진동에 더욱더 취약해지는 결과를 초래하므로 보다 엄격하게 진동관리가 필요하게 된다. 이에, 본 논문에서는 기존 세대인 1～5세대 TFT-LCD 공장 현장에서 노광기의 진동실태를 수집하여 파악하고 Maker에서 제시하는 자료와 비교/평가하고, 문제점을 확인한다. 이를 기초로 수정/보완되어야 할 사항을 검토하며, 차세대인 6∼7세대 노광기에 대한 진동저감 대책을 위한 시스템을 설계하는 절차서에 대한 예를 들었으며, 최적의 진동저감 대책에 대한 설계안의 방향을 제시하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.86-88
• /
• 2003

Gate 산화막을 high-k 물질인 $HfO_2$ 박막을 이용하여 N-type MOS field effect transistor를 제작하였다. 전극은 poly-Si 전극을 사용하였다. Gate 산화막은 ALD 로 $Hf(N(CH_3)_2)_4$ 원료를 이용하여 $HfO_2$ 박막을 형성하였다. 산화제는 $H_{2}O$ 와 $O_3$ 를 사용하였는데, $H_{2}O$ 가 약간 우수하였으나 그 차이는 크지 않았다. $HfO_2$ 를 증착하기 전에 in-situ 로 $O_3$ 를 흘려 줌으로써 $SiO_2$를 얇게 형성하였는데, 이 결과 threshold voltage 가 약 0.2V 높아지고 saturation current 가 커지는 것이 관찰되었다. 이러한 결과는 $HfO_2$ 박막을 직접 channel 위에 증착하는 것보다 $O_3$ 를 이용 얇은 $SiO_2$ 를 형성하고 그 위에 $HfO_2$ 박막을 증착하는 방법이 transistor의 특성을 향상시키는 데 도움이 된다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.31-34
• /
• 2003

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data with errors less than 5% between simulation and experiment.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.122-125
• /
• 2003

We investigated the effect of the abrasive and additive concentrations in Nano ceria slurry on the pad surface temperature under varying pressure through chemical mechanical polishing (CMP) test using blanket wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with increase of the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surface during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increase of the additive concentration. This difference of temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, which means the higher friction coefficient.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.146-153
• /
• 2003

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate subjected to the combined influence of temperature change and moisture absorption. A boundary element analysis is employed to investigate the behavior of interface stresses. The film is assumed to be thermorheologically simple. It is further assumed that moisture effects are analogous to thermal effects. Numerical results are presented for a given viscoelastic model, indicating the singular residual stresses induced during cooling down from the curing temperature, and how they can be altered by subsequent moisture absorption at room temperature.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.182-185
• /
• 2003

We have suggested an equivalent circuit model for switching performance of bipolar spin transistor composed of a nonmagnetic metal film (N) sandwiched between two ferromagnetic metal films (F1 and F2). The 'ON' or 'OFF' operation of this equivalent circuit model is simulated by depending on the orientation of the magnetization of F1 and F2 rather than the strength of the external magnetic filed. Changing the coupling coefficient, turn number of two inductances, (L1:L2) like a transformer, and parallel variable resistance R4 connected to L2 at the collector region, we can explain the magnetic characteristics and the dependence of magneto resistance ratio on the orientation of spin-polarized electrons.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.1-6
• /
• 2003

Flow modulation chemical vapor deposition process has been reported as an alternative way to obtain low resistivity, low residual chlorine content and good step-coverage titanium nitride film. Flow and concentration characteristics in a vertical FMCVD reactor are analyzed by using computational fluid dynamics method. The results show that 1.0 second as Cl reduction period is too short and there is still $TiCl_4$ gas above the holder at the end of the period. Time variation of $TiCl_4$ gas concentration on the holder shows that at least 3.0 second is necessary as Cl reduction time for the sake of film characteristics.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.1
• /
• pp.7-15
• /
• 2011

In this paper, we implement measurement functionality for the 3GPP (Third Generation Partnership Project) WCDMA (Wideband Code Division Multiple Access) modem. Generally speaking, the receiving algorithms in normal modems cannot be used directly to the measurement system due to the lack of the measurement accuracy. In this paper, we propose the new measurement algorithm for precise 3GPP WCDMA signal measurements. In the measurement algorithm, 4-stage parameters estimation scheme is used. To improve the measurement accuracy, we increase the number of the received signal samples by interpolation. The proposed 3GPP WCDMA signal measurement algorithm can be used for verifying and implementing SoC/FPGA modem measurement systems.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.3
• /
• pp.88-92
• /
• 2019

Automotive industry requires high technologies to stabilize apparatuses for the EGR valve manufacturing. Vibrations of washing machine are one of the most critical factors for causing unwashed products, which are the main reasons of the defects.In this study, the structure of the washing machine was analyzed through the experiment and the computer simulation to investigate the main reasons of the vibrations, and further to alter the design for the improved stability. And the design alterations were applied to the machine to identify the effects of those alterations.The result of the study shows that design alterations of the washing machine can effectively suppress about 85% of the vibrations, and further can minimize the unwashed EGR valve.