• Title/Summary/Keyword: 반도지(半島池)

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Measurement of Impurities and Physical Properties at Semiconductive Shield of a Power Cable (전력케이블의 반도전 재료에서 불순물 및 물성 측정)

  • Lee Kyoung-Yong;Yang Jong-Seok;Choi Yong-Sung;Park Dae-Hee
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.12
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    • pp.601-605
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    • 2004
  • In this paper, we investigated ionic impurities and physical properties by change of carbon black content, which is asemiconductive material for underground power transmission. Specimens were made into sheet form with three existing resins and nine specimens for measurement. The ionic impurities of the specimens were measured using anICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer), and the density of specimens was measured by a density meter. Specific heat (Cp) was then measured using aDSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[$^{\circ}C$] to 200[$^{\circ}C$], and heating temperature was 4[$^{\circ}C$/min]. Ionic impurities were measured to be high according to increases in the content of carbon black from this experimental result and density was also increased according to these properties. In particular, the impurity content values of A1 and A2, and existing resins, were measured at more than 4000[ppm]. Specific heat from the DSC results was lowered according to augmentation in the content of carbon black. The ionic impurities of carbon black containing Fe, Co, Mn, Al and Zn are forms of rapidly passed kinetic energy that increase the number of times breaking occurs during unit time with the near particles according to an increase in the vibration of particles by the applied heat energy.

Electrical and Mechanical Properties of Semiconducting Shield for Power Cable by Carbon Nanotube Content (탄소나노튜브(CNT) 함량에 따른 전력케이블용 반도전 재료(층)의 전기적/기계적 특성 연구)

  • Yang Jong-Seok;Lee Kyoung-Yang;Shin Dong-Hoon;Park Dae-Hee
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.8
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    • pp.381-386
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    • 2006
  • In this study, we have investigated electrical and mechanical properties of semiconducting materials for power cable caused by CNT. Specimens were made of sheet form with the four of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both $23{\pm}\;1\;[^{\circ}C]\;and\;90{\pm}\;1\;[^{\circ}C]$. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm2] and 600[%]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between $23[^{\circ}C]\;and\;90[^{\circ}C]$. Also volume resistivity was low by increasing the content of CNT. It means that a small amount of CNT has a excellent electrical properties. And stress was increased, while strain was decreased by increasing the content of CNT. Thus, we could know that a small amount of CNT has a excellent electrical and mechanical oroperties.

Polymer thin film organic transistor characteristics with plasma treatment of interlayers (플라즈마 표면처리에 따른 유기트랜지스터 특성)

  • Lee, Boong-Joo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.6
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    • pp.797-803
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    • 2013
  • In this paper, we fabricated insulator thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the electrical characteristics of organic transistor, we treated the semiconductor thin film with $O_2$ plasma. As results, the surface energy of organic transistor was increased from $38mJ/m^2$ to $72mJ/m^2$ and the mobility of organic transistor was increased $0.057cm^2V^{-1}s^{-1}$, that is increased 29% average ratio. Therefore, we have known that oragnic transistor's mobility can improve with plasma treatment of semiconductor thin film's surface.

A Study on the Properties of Semiconducting Materials with contents of Carbon Nanotube in Power Cable (전력케이블에서 탄소나노튜브 함량에 따른 반도전층 재료의 특성 연구)

  • Yang, Jong-Seok;Shin, Dong-Hoon;Lee, Kyoung-Yong;Park, Dae-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.3
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    • pp.571-576
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    • 2007
  • In this paper, we have investigated chemical, mechanical and structural properties by changing the content of carbon nanotube, Which is a component part of semiconductive shield in underground power transmission cable. The multi luminescence spectrometer MLA-GOLDS was used to investigate chemical properties of specimens. Also, the density meter EW-200SG was used to investigate the mechanical properties of specimens, and the FE-SEM S-4300 in Hitachi was used for dispersion of CNT(Carbon nanotube). As a result, the cl intensity, which show the effect of oxidation, was decreased by CNT of 1 [wt%], and the density of semiconductive shield materials with CNT and EEA(Ethylene Ethyl Acrylate) is lower than that for commercial semiconductive shield materials. Also, the properties of dispersion showed an increase according to an increase in the ratio of CNT, and the properties were the best at 5 wt%. Therefore, excellent chemical, mechanical and structural properties can be improved with the small amount of CNT.

Structural and Electrical Properties of Semiconducting YBCO Thin Film Annealed at Various Temperatures for Uncooled Infrared Sensor Application (비냉각형 적외선 센서로 응용하기 위한 반도성 YBa2Cu3O6+x 박막의 열처리 온도에 따른 구조적 전기적 특성)

  • Lee, Tae-Ho;Lee, Sung-Gap;Yeo, Jin-Ho;Jung, Hye-Rin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.10
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    • pp.731-735
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    • 2013
  • YBCO thin films on $SiO_2$/Si substrate were fabricated by spin-coaing of an alkoxide-derived precursor and heat treatment. The structural and electrical properties of the YBCO films were investigated as functions of annealing temperature at $600{\sim}800^{\circ}C$. Although YBCO single phase was not synthesized, dense films of YBCO matrix phase and minor second phases have been successfully fabricated at the annealing temperatures of $650{\sim}800^{\circ}C$. Thickness and temperature coefficient of resistance (TCR) of YBCO thin films with annealing temperature of $750^{\circ}C$ were 0.31 ${\mu}m$ and $-2.92%/^{\circ}C$, respectively.

A Study on the Improvement of Mechanical and Chemical Properties in Nano Semiconducting Materials (나도 반도전층 재료의 기계적/화학적 특성 향상에 관한 연구)

  • Shin, Dong-Hoon;Kook, Jeong-Ho;Nah, Chang-Woon;Park, Dae-Hee;Yang, Jong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.4
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    • pp.739-744
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    • 2007
  • In this paper, we have investigated mechanical and chemical properties by changing the content of carbon nanotube, which is component part of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the eight of those for measurement. The condition of specimens was a solid sheet. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). Stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm] and 600[%]. We could observe (unctional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group [C=O] was high accor야ng to increasing the content of carbon nanotube. We could know CNT/EEA was excellent more than other specimens from above experimental results. In Addition, the elongation ratio was decreased, and yield strength was increased according to increasing the content of carbon nanotube. Also, from these experimental result, we could know that a small amount of CNT/EEA has a excellent mechanical and chemical properties.

Volume Resistivity Properties due to the Curing Condition of Silicone Gel for Semiconductor (반도체용 실리콘 젤의 경화조건에 따른 체적고유저항 특성)

  • 조경순
    • Journal of the Korea Computer Industry Society
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    • v.3 no.12
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    • pp.1747-1758
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    • 2002
  • In order to study the electrical properties of silicone gel due to the curing condition, AC breakdown test is researched. For experiment, we have made up several samples cured during each 30[Min], 1[H], 2[H] at 100[$^{\circ}C$], 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$], 180[$^{\circ}C$]. The equipment for this test can measure the dipole output voltage to 50[kV], with increasing rate of about 3[kV] per second. A material of electrode using to the breakdown test is a copper(purity : 99%), the gap between electrodes is to 1[mm]~3[mm], and it thickness is 0.2[mm]. As a result of the experiment, the electrical properties of specimen cured at 170[$^{\circ}C$] for 2[H] is superior.

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Specific Heat and Thermal Conductivity Measurement of CNT/EEA Semiconducting Materials and XLPE Insulator (CNT/EEA 반도전층 재료와 XLPE 절연체의 열적 특성)

  • Yang, Jong-Seok;Lee, Kyoung-Yong;Shin, Dong-Hoon;Park, Dae-Hee
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.11
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    • pp.514-519
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    • 2006
  • To improve the mean-life and the reliability of power cable, we have investigated specific heat (Cp) and thermal conductivity of XLPE insulator and semiconducting materials in 154[kV] underground power transmission cable. Specimens were made of sheet form with the seven of specimens for measurement. Specific heat (Cp) and thermal conductivity were measured by DSC (Differential Scanning Calorimetry) and Nano Flash Diffusivity. Specific-heat measurement temperature ranges of XLPE insulator were from $20[^{\circ}C]\;to\;90[^{\circ}C]$, and the heating rate was $1[^{\circ}C/min]$. And the measurement temperatures of thermal conductivity were $25[^{\circ}C],\;55[^{\circ}C]\;and\;90[^{\circ}C]$. In case of semiconducting materials, the measurement temperature ranges of specific heat were from $20[^{\circ}C]\;to\;60[^{\circ}C]$, and the heating rate was $1[^{\circ}C/min]$. And the measurement temperatures of thermal conductivity were $25[^{\circ}C]\;and\;55[^{\circ}]C$. From these experimental results both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature. We could know that a small amount of CNT has a excellent thermal properties.

Adhesion Characteristics of Semiconductive and Insulating Silicone Rubber by Oxygen Plasma Treatment (산소 플라즈마 처리에 의한 반도전-절연 실리콘 고무의 접착 특성)

  • Lee Ki- Taek;Huh Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.2
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    • pp.153-157
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    • 2006
  • In this work, the effects of plasma treatment on surface properties of semiconductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy (XPS) and contact angles, The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths, The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds(SiOx, x=3${\~}$4) increased, It is thought that semiconductive silicone rubber surfaces treated with plasma discharge led to an increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. However, the oxygen plama for 20 minute produces a damaged oxidized semiconductive silicone rubber layer, which acts as a weak layer producing a decrease in T-peel strength, These results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semiconductive silicone rubber.

Electrical and Mechanical Properties of Semiconductive Shield in Power Cable; Volume Resistivity and Stress-Strain Measurement (전력케이블내 반도전 재료의 전기적 및 기계적 특성; 체적저항과 Stress-Strain 측정)

  • Lee Kyoung-Yong;Yang Jong-Seok;Choi Yong-Sung;Park Dae-Hee
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.2
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    • pp.45-50
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    • 2005
  • To improve mean-life and reliability of power cable, in this study, we have investigated electrical properties and stress-strain showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 25±1 [℃] and 90±1 [℃]. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/㎠] and 600[%]. In addition tests of stress-strain were progressed by aging specimens in air oven. From this experimental results, volume resistivity was high according to increasing the content of carbon black. And yield stress was increased, while strain was decreased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. We could know EEA was excellent more than other specimens from above experimental results.