• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1062-1067
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• 2007

In this paper, we have investigated thermal properties of semiconductive shield materials for power cables. EEA (Ethylene Ethyl Acrylate) was used for base polymer and TGA (Thermal Gravimetric Analysis) and AFM (Atomic Force Microscope) were investigated with various carbon black and CNT (carbon nanotube) contents. When CNT reinforced composites and conventional composite were investigated with TGA, we knew that thermal properties of CNT reinforced composite were better than them of conventional composite. To investigate roughness, we used AFM. Before and after aging, AFM was applied and after aging, roughness was increased. As a result, suitable CNT and CB(carbon black) content is CNT:CB=50:50.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.8
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• pp.1091-1098
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• 2012

This paper describes frequency response and propagation characteristics considering semiconducting screen in distribution cables. In CIGRE WG 21-05, Simplified Approach(SA) and Rigorous Approach(RA) which can revise the permittivity considering semiconducting screen propose for more detailed EMTP model and frequency dependant analysis. In this paper, the frequency dependent characteristics of complex permittivity are variously analysed by cole-cole function of RA. The attenuation, propagation velocity and surge impedance according to frequency range(1 kHz to 500 MHz) and cable length are also analysed by SA and EMTP simulation in distribution cables. The propagation velocity considering semiconducting screen is slower, and it is saturated over the range of 1 MHz. The signal is significantly attenuated as frequency range is high.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.227-234
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• 2000

Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.571-576
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• 2021

The use of forklift trucks in logistical warehouses, etc. is generalized; however, the accidents of rollover of the forklift truck have occurred frequently. In general, in order to solve a problem, many people attempt to solve the problem by using computer simulation or simulators which is composed of reduced hardware. Therefore, in this paper, we analyze the problem existed in forklift truck and we also explain the concept of a mechanism to prevent the rollover of forklift truck. In addition, we propose the configuration of simulator system and a designed simulator to prevent the rollover of forklift truck.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.6
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• pp.1249-1256
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• 2018

Recently the research on artificial intelligence is actively processing in the fields of diagnosis and prediction. In this paper, we acquire the data of electrical current, revolution per minute (RPM) and vibration that is occurred in the motor and pump where hey are installed in the industrial fields. We train the acquired data by using the k-nearest neighbors. Also, we propose the status diagnosis methods that judges normal and abnormal status of motor and pump by using the trained data. As a proposed result, we confirm that normal status and abnormal status are well judged.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.05a
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• pp.197-202
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• 2005

The electromagnetic signals associated with the seismic activity in the south-east offshore of Kii peninsula, Japan, were clearly recorded at the MT sites in Jeju island, Korea. In this research, we have identified the co-seismic electromagnetic signals associated with the seismic activity and have analyzed the characteristics of significant electromagnetic variations. The analysis of phase velocity, power spectral density, MT impedance and polarization direction shows that the significant earthquake signals have the frequency band of about 0.05 to 0.5 Hz and that the sources of electromagnetic field are local effects of passing seismic waves. The simple approximation using electrokinetic effect successfully explains the co-seismic EM signals coincides with measured data but cannot explain the localities of electromagnetic variations.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.11
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• pp.477-482
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• 2005

We have investigated volume resistivity and thermal properties showed by changing the content of carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both 25$\pm$1[$^{\circ}C$] and 90$\pm$1[$^{\circ}C$]. And specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The measurement temperature ranges of specific heat using the BSC was from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min]. And the measurement temperatures of thermal conductivity using Nano Flash Diffusivity were both 25[$^{\circ}C$] and 55[$^{\circ}C$]. Volume resistivity was high according to an increment of the content of carbon black from these experimental results. And specific heat was decreased, while thermal conductivity was increased by an increment of the content of carbon black. And both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.5
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• pp.1-8
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• 1976

Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.