• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1062-1067
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• 2007

In this paper, we have investigated thermal properties of semiconductive shield materials for power cables. EEA (Ethylene Ethyl Acrylate) was used for base polymer and TGA (Thermal Gravimetric Analysis) and AFM (Atomic Force Microscope) were investigated with various carbon black and CNT (carbon nanotube) contents. When CNT reinforced composites and conventional composite were investigated with TGA, we knew that thermal properties of CNT reinforced composite were better than them of conventional composite. To investigate roughness, we used AFM. Before and after aging, AFM was applied and after aging, roughness was increased. As a result, suitable CNT and CB(carbon black) content is CNT:CB=50:50.

• 전기학회논문지
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• 제61권8호
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• pp.1091-1098
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• 2012

This paper describes frequency response and propagation characteristics considering semiconducting screen in distribution cables. In CIGRE WG 21-05, Simplified Approach(SA) and Rigorous Approach(RA) which can revise the permittivity considering semiconducting screen propose for more detailed EMTP model and frequency dependant analysis. In this paper, the frequency dependent characteristics of complex permittivity are variously analysed by cole-cole function of RA. The attenuation, propagation velocity and surge impedance according to frequency range(1 kHz to 500 MHz) and cable length are also analysed by SA and EMTP simulation in distribution cables. The propagation velocity considering semiconducting screen is slower, and it is saturated over the range of 1 MHz. The signal is significantly attenuated as frequency range is high.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.227-234
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• 2000

Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

• 대한전자공학회논문지
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• 제24권3호
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

• 한국전자통신학회논문지
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• 제16권3호
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• pp.571-576
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• 2021

물류 창고 등에서 지게차 사용은 일반화되어 있으나 최근에는 지게차 전도 사고가 빈번하게 발생하고 있다. 또한 일반적으로 어떤 문제를 해결하기 위해서는 컴퓨터를 이용한 시뮬레이션이나 축소된 하드웨어로 구성한 시뮬레이터를 이용한 문제 해결을 시도하고 있다. 이에 본 논문에서는 지게차의 전도 예방을 위해 기존 지게차의 문제점을 분석하고 지게차의 전도 예방을 위한 기구 개념을 설명한다. 또한 지게차 전도 예방을 위한 시뮬레이터 시스템 구성과 설계된 시뮬레이터를 제시하고자 한다.

• 한국전자통신학회논문지
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• 제13권6호
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• pp.1249-1256
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• 2018

최근 인공지능에 대한 연구가 진단과 예측 분야에서 활발하게 진행되고 있다. 본 논문에서는 산업 현장에 설치되어 있는 모터와 펌프에서 발생하는 진동, 회전 수, 전류 데이터 취득한다. 취득한 데이터로부터 k-최근접 이웃(k-nearest neighbors) 알고리즘을 적용하여 이들 데이터를 학습하고, 학습한 데이터를 이용하여 펌프와 모터의 이상상태와 건전 상태를 판단하는 상태진단법을 제안한다. 제안 결과 정상상태와 이상상태가 잘 구분됨을 확인할 수 있었다.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2005년도 공동학술대회 논문집
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• pp.197-202
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• 2005

최근 제주도에서 실시된 자기지전류(Magnetotelluric) 탐사 자료에서 일본의 Kii 반도 남동쪽 해상에서 발생한 지진활동과 관련된 전자기 현상이 관측되었으며, 이러한 동지진 전자기장 신호의 특성과 메카니즘을 분석하였다. 전파속도, 파워 스펙트럼의 특성, 지진 기록과의 비교, MT 임피던스의 변화, 타원분극 방향 등의 분석으로부터 전자기장 변동이 지진파 전파 과정에서 측점 주변에서 유도된 전자기장으로 판단되며, 측점 주변의 지전기 및 수리지질학적 구조에 의해 전자기장 변동이 크게 좌우됨을 알 수 있다. 전기역학적 효과의 간단한 고찰을 통해 관측된 전자기장의 크기가 이론적 근사와 유사함을 알 수 있었으며 전자기장의 파워가 가속도 파워와 밀접히 관련되어있음을 알 수 있으나 측점에 따라 전자기장의 크기와 방향이 크게 차이가 나는 것은 설명하기 위해서는 전기역학적 메카니즘 이외의 효과를 고려할 필요가 있다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권11호
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• pp.477-482
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• 2005

We have investigated volume resistivity and thermal properties showed by changing the content of carbon black which is the component parts of semiconducting shield in underground power transmission cable. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the preheated oven of both 25$\pm$1[$^{\circ}C$] and 90$\pm$1[$^{\circ}C$]. And specific heat (Cp) and thermal conductivity were measured by Nano Flash Diffusivity and DSC (Differential Scanning Calorimetry). The measurement temperature ranges of specific heat using the BSC was from 20[$^{\circ}C$] to 60[$^{\circ}C$], and the heating rate was 1[$^{\circ}C$/min]. And the measurement temperatures of thermal conductivity using Nano Flash Diffusivity were both 25[$^{\circ}C$] and 55[$^{\circ}C$]. Volume resistivity was high according to an increment of the content of carbon black from these experimental results. And specific heat was decreased, while thermal conductivity was increased by an increment of the content of carbon black. And both specific heat and thermal conductivity were increased by heating rate because volume of materials was expanded according to rise in temperature.

• 대한전자공학회논문지
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• 제13권5호
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• pp.1-8
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• 1976

게이트의 길이가 2mm인 GaAb 금속반도체전계치과트랜지스터를 HP8545 자동회로망분석기에 의하여 주파수 1∼2GHz 사이에서 산란계수를 측정하였고, 산란계수의 도움으로 완전한 등가회로를 구현하였다. 본 논문에서는 50Ω의 높은 입출력 Impedance로 정합시키기 위하여 Microstrip을 사용하여 GaAs MESFET증폭기를 개발하였으며 전력이득이 8dB, 정재파비가 1.5보다 적은 결과를 얻었다. Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.