• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.45-50
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• 2005

To improve mean-life and reliability of power cable, in this study, we have investigated electrical properties and stress-strain showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the nine of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 25±1 [℃] and 90±1 [℃]. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/㎠] and 600[%]. In addition tests of stress-strain were progressed by aging specimens in air oven. From this experimental results, volume resistivity was high according to increasing the content of carbon black. And yield stress was increased, while strain was decreased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. We could know EEA was excellent more than other specimens from above experimental results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.4
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• pp.149-153
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• 2005

We have investigated thermal properties showed by changing the content of carbon black which is the component parts of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the nine of those for measurement. Heat capacity (${\Delta}$H), glass transition temperature (Tg) and melting temperature (Tm) were measured by DSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from -100($^{\circ}C$) to 100($^{\circ}C$), and heating rate was 4($^{\circ}C$/min). And then thermal diffusivity was measured by LFA 447. The dimension of measurement temperature was 25[$^{\circ}C$]. Glass transition temperature of specimens was showed near -25[$^{\circ}C$] and the heat capacity and the melting temperature from the DSC results were simultaneously decreased according to increasing the content of carbon black, while thermal diffusivity was increased according to increasing the content of carbon black. Because ionic impurities of carbon black having Fe, Co, Mn, Al and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.4
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• pp.154-160
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• 2005

We have investigated thermal properties showed by changing the content of carbon black which is the component parts of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the nine of those for measurement. Density of specimens was measured by density meter, and then stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400(Kgf/$cm^2$) and 600[$\%$]. In addition, tests of stress-strain were progressed by aging specimens at air oven. Finally surface profile was shown in order to looking for protrusion of specimens by using smoothness tester. Density was highly measured according to increasing the content of carbon black from this experimental result, and stress was decreased, while strain was increased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. Lastly surface of specimens smoothed generally.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1326-1331
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• 2004

In this paper, we have investigated thermal properties and Impurities content of specimens showing by changing the content of carbon black that is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICPAES(Inductively Coupled Plasma Atomic Emission Spectrometer). Heat capacity(ΔH) and melting temperature(Tm) were measured by DSC(Differential Scanning Calorimetry). The ranges of measurement temperature were from $0^{\circ}C$ to 20$0^{\circ}C$, and heating temperature was 4$^{\circ}C$/min. And then thermal diffusivity was measured by LFA 447. The measurement temperature was $25^{\circ}C$. Impurities content was highly measured according to increasing the content of carbon black from ICPAES results. And heat capacity and melting temperature from the DSC results were simultaneously decreased according to increasing the content of carbon black, while thermal diffusivity was increased according to increasing the content of carbon black. Because ionic impurities of carbon black containg Fe, Co, Mn, Al, and Zn were rapidly increasing kinetic energy by vibration of ionic impurities through the applied heat energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.893-897
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• 2004

In this paper, we studied the mechanical and thermal properties on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor. We evaluated mechanical property, thermal analysis, moisture analysis. Based on mechanical and thermal properties of the 22 kV XLPE sheet, elongation, mechanical strength, and melting point were evaluated to be 485.48 %, 1.74 kgf/$\textrm{mm}^2$ and $102.48^{\circ}C$, respectively. It was also evaluated from the mechanical and thermal properties of 154 kV XLPE sheet that elongation, mechanical strength, and melting point are 507.81 %, 1.8 kgf/$\textrm{mm}^2$, $106.9^{\circ}C$, respectively. A region shows a rapid increase in tension strength, and B region only shows increase in elongation under 1.0 kgf/$\textrm{mm}^2$, C region shows increase in both elongation and tension strength. Difference of melting point came from the chain of XLPE polymer and the difference of crystallization. Moisture density of semiconductor showed 800 ∼ 1200 ppm before extrude, 14000 ∼24000 ppm after extrude. These values were higher than the moisture density of XLPE (300∼560) ppm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.3
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• pp.1-9
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• 1973

Gallium phosphide light emitting diode (LED) has been fabricated first time for pilot lamp and numeric display purposes. Bright red light is obtained in forward bias at very low current of one to five mA. A typical p-n junction is formed by liquid phase epitaxial growth on a n-type gallium physphide substrate. The crystal growth is achieved at about 1300$^{\circ}$K after the equilibrium of the gallium solution followed by tipping operation. The ohmic contact is made by wire bonding by thermal compression technique. The entire process is well fit for laboratory scale to fabricate a few hundred diodes for mainly demonstration purpose. For mass production, a large sum of the capital investment is required. The great merit of gallium phosphide LED is at low current operation, and green light emission is also obtainable by nitrogen doping.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.9
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• pp.455-458
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• 2004

In this paper, we investigated impurities content and physical properties showing by changing the content of carbon black that is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter And then specific heat (Cp) was measured by DSC (Differential Scanning Calorimetry). A ranges of measurement temperature were from $0^{\circ}[C]$ to $200^{\circ}[C]$, and heating temperature was $4^{\circ}[C/min]$. Impurities content was highly measured according to increasing the content of carbon black from this experimental result, also density was increased according to these properties. Especially impurities content values of the Al and A2 of existing resins were measured more than 4000［ppm］. Specific heat from the DSC results was decreased according to increasing the content of carbon black. Because ionic impurities of carbon black having Fe, Co, Mn, Al and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.443-448
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• 2005

To measure modulus, damping properties and smoothness of semiconducting materials in power cable, we have investigated those of semiconducting materials showed by changing the content of carbon black. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm$^{2}$]. The content of conductive carbon black was the variable, and their contents were 20, 30 and 40[wt$\%$], respectively. The modulus and tans were measured by DMA 2980. The ranges of measurement temperature were from -50[$^{\circ}C$] to 100[$^{\circ}C$] and measurement frequency was 1[Hz3. The modulus of specimens was increased according to a increment of a carbon black content. And modulus was rapidly decreased at the glass transition temperature. The tans of specimens was decreased according to a increment of a carbon black content. The smoothness was measured by JSM-6400. EEA resin from SEM measurement was best the dispersion of carbon back in base resin.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.868-872
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• 2006

In this work, the effects of the corona treatment on surface properties of semiconducting silicone rubber were investigated in terms of contact angles, ATR-FTIR(Attenuated total reflection fourier transform infrared spectroscopy) and XPS(X-ray photoelectron spectroscopy). And the adhesive characteristics were studied by measuring the T-peel strengths. Based on chemical analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and C-OH on semiconducting silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiOx,\;x=3{\sim}4$. The Corona treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength.