• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.177-177
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• 2010

본 연구에서는 반도체용 Si wafer에 마스크 공정 및 slit etching 공정을 적용하여 목표인 30um 이하의 Probe unit을 개발하기 위해 Deep Si Etching(DRIE) 장비를 이용하여 식각 공정에 따른 특성을 평가하였다. 마스크는 Probe block 조립에 적합한 패턴으로 설계 하였으며, slit의 에칭된 지점에 pin이 삽입될 수 있도록 그 폭을 최소한으로 설계하였다. 30um pitch와 20um pitch의 마스크를 각각 설계하여 포토공정에 의해 마스크패턴을 제작하였으며, 식각공정 결과 식각율 5um/min, profile angle $89^{\circ}{\pm}1^{\circ}$로 400um wafer의 양면관통 식각을 확인하였으며, 표면 및 단면 식각특성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.53-57
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• 2002

Reduction of insulation thickness would be beneficial not only for increasing the cable length but would also improve its thermal performance. An interfacial diffusion method was devised to reduce insulation thickness by improving the interfacial properties of XLPE cable insulation. In this paper, to evaluate superficially the interface properties between XLPE insulation and semiconducting layer, the dielectric and insulation properties of tan${\delta}$ and volume resistance were measured with temperature dependence. Above the results, dielectirc and insulation properties with semiconductor/XLPE were more anormal than its bulk caused by the interfacial properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.25-28
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• 2005

This paper was investigated the changes of surface properties of high-temperature-vulcanized(HTV) semiconductive silicone rubber due to oxygen plasma discharge. The modifications produced on the silicone surface by oxygen plasma were accessed using x-ray photoelectron spectroscopy(XPS), contact angle and Scanning Electron Microscope(SEM). The results of the chemical analysis showed that C-H bonds were broken due to plasma discharge and Silica-like bonds (SiOx. x=3~4) increased. It is thought that the above changes lead to the increase of surface energy of high-temperature-vulcanized(HTV) semiconductive silicone rubber. The micromorphology of surface and hydrophobicity due to plasma discharge based on our results were discussed.

• Electronics and Telecommunications Trends
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• v.8 no.4
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• pp.49-54
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• 1993

최근의 정보 통신 기기들은 정보 통신 서비스에 대한 요구에 따라 다기능, 고속 및 대용량화로 비약적인 발전을 하고 있으며 휴대 통신 단말기의 경우 이용자의 편리를 위하여 소형화 및 경박 단소화를 지향하고 있다. 따라서 부품에 대한 요구 사항도 이들 추세에 따라 소형화, 다기능화 및 고신뢰화를 요구하고 있다. 따라서, 하나의 소자로 복합적인 기능을 갖는 다기능성 소자의 개발이 바람직하다. $SrTiO_3$를 모체로 하는 세라믹 유전체는 반도체화 세라믹의 결정입계에 산화물로 절연층을 형성하여 하나의 소자로 Capacitor 와 Varistor 기능을 동시에 갖는 다기능 소자용 소재로 이용되고 있다. 본 실험에서는 $SrTiO_3$조성비 및 입계절연화제의 확산 온도에 따라 이들이 전기전도 특성에 미치는 영향에 대하여 검토하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.251-252
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• 2008

In this study, we have investigated electrical properties of semiconductive materials for power cable caused by copper tape shield structure. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both 23 [$^{\circ}C$] and 90 [$^{\circ}C$]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between 23 [$^{\circ}C$] and 90 [$^{\circ}C$].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.163-166
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• 1998

In this paper, breakdown strength and dielectric characteristics were experimented in the structures of insulation/insulation/insulation and insulation/semiconductor/insulation by using of insulation material of polyethylene terephthalate film. The breakdown strength and the permitivity of each specimen were measured as a function of temperature and frequency respectively. The breakdown strength of PET/PET/PET did not changed greatly but that of PET/SEMl/PEr increased as a function of temperature. As the frequency inclosed, the permitivity of PET/PET/PET and PET/SEMI/PET decreased. The tan $\delta$ of PET/PET/PET showed lower than that of PET/SEMl/PET in low frequency but higher in high frequency .

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.239-242
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• 1999

In this study, we evaluates the dependence of thickness and temperature in the breakdown strength of MDPE and effect of semiconductor. As the result, breakdown strength trend to decrease according to the increase of thickness and temperature but there is no dependence of temperature in the 70${\mu}{\textrm}{m}$ MDPE film. We obtained the result that the breakdown strength was a little lower in the structure of Semil/MDPE than Semi/MDPE/Semi, but breakdown strength of MDPE was greater both of all. Therefore we are investigating the effect of semiconductor in the breakdown strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1062-1067
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• 2007

In this paper, we have investigated thermal properties of semiconductive shield materials for power cables. EEA (Ethylene Ethyl Acrylate) was used for base polymer and TGA (Thermal Gravimetric Analysis) and AFM (Atomic Force Microscope) were investigated with various carbon black and CNT (carbon nanotube) contents. When CNT reinforced composites and conventional composite were investigated with TGA, we knew that thermal properties of CNT reinforced composite were better than them of conventional composite. To investigate roughness, we used AFM. Before and after aging, AFM was applied and after aging, roughness was increased. As a result, suitable CNT and CB(carbon black) content is CNT:CB=50:50.

• Electronics and Telecommunications Trends
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• v.3 no.2
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• pp.56-60
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• 1988

반도체 가스의 순도에 따라 반도체 박막의 특성이 좌우되기 때문에 현재의 고순도 가스에서 초고순도 가스로 사용하여야 한다. 최근 반도체 공정기술은 화학증착법으로 많은 특수 가스를 사용하는데 이런 가스들은 사전에 가스에 대한 전문 지식과 기술을 충분히 이해한 다음 사용하여야만 고성능화 공정기술이 가능하다. 반도체용 가스는 회로의 집적도가 높아짐에 따라 요구되는 가스의 품질이 점점 고순도화되고 있다. 따라서 현 반도체 공정에 사용되는 가스 순도를 초고순도화 시켜야만 초고집적 소자인 4M DRAM, 16M DRAM, 64M DRAM 제품 개발 및 제조가 가능하다. 다시말해서 공정에 따른 주변조건이 이루어져야 만 반도체 산업이 크게 신장 할 수 있다. 최근 반도체 공정 기술로는 플라즈마(Plasma), 드라이에칭(Dry etching), CVD(Chemical Vapor Deposition), MOCVD(Metal Organic Chemical Vapor Deposition), Ion Implantation, EPI 공정으로 거의 대부분 공정 가스가 가연성, 폭발성, 독성, 부식성 이기 때문에 한번 취급을 잘못하면 막대한 인명 및 재산 피해를 입히므로 취급상 특별한 주의를 요하고 사전에 가스의 전문 지식과 기술을 충분히 이해한 다음 사용하여야 한다.