• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.2-29.2
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• 2009

21세기 제 3의 산업혁명을 가져올 것으로 기대되는 나노기술(NT), 정보기술(IT), 바이오기술(BT)은 전 세계 과학자들의 마음을 사로잡고 있다. 이 가운데 나노기술은 전자산업에 응용 시 그 기대효과는 우리가 상상하는 이상의 것이라 예상하고 있다. 나노기술에 특히 관심을 가지는 이유는 물질이 마이크로미터 크기로 작아져도 벌크물질의 물리적 특성이 그대로 유지되지만, 나노미터 크기가 되면서 우리가 경험하지 못했던 새로운 물리적 특성들이 발현되기 때문이다. 그 특성에는 양자구속효과, Hall-Petch 효과, 자기효과 등이 있다. 나노기술의 구현은 양자점과 같은 영차원 나노입자, 나노와이어, 나노막대, 나노리본 등과 같은 직경이 100nm 이하의 일차원 구조의 나노물질 및 나노박막과 기타 100nm 이하의 나노구조물들이 사용된다. 현재 일차원 구조를 이용한 전자디바이스화 연구는 결정성장을 정확하게 조절하는 합성기술, 합성된 일차원 나노물질의 물리적 특성을 지배하는 각종 파라미터들과 물리적 특성들과의 상관관계 정립, 나노와이어를 이용한 Bottom-up 방식에 의한 조립기술 확보를 위해 활발히 진행 중이다. 하지만 나노구조의 특성을 확인하는 형태의 연구일 뿐, 실제 디바이스 구현에는 여전히 많은 과제를 안고 있다. 본 연구에서는 선택적 삼원계 단결정 씨앗층을 이용한 길이/직경 비가 매우 향상된 MgZnO 나노와이어를 interfacial layer 없이 수직으로 성장하여 산화물 전계방출 에미터로서의 가능성을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.783-786
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• 2000

In this paper, physical properties and dielectric characteristics of LLDPE and EVA which are used as a blending material to improve PE's performance are studied. LLDPE of 0.92[g/cm3] and EVA with the EVA contents of 12.5[%1 were selected as specimens, and X-ray diffraction(XRD) are used to analysis physical properties. We measured dielectric constant with the frequency range from 20[Hz] to 1 [MHz], applied voltage 6[V] and the temperature from 25[$^{\circ}C$] to 110[$^{\circ}C$]. From XRD, LLDPE has a crystallinity of 53[%] and, 46[%] for EVA. LLDPE has as low tan$\delta$ as of 10$^{-3}$ ~10$^{-4}$ and inflection point near 500[Hz]. At frequency region lower than 500[Hz], tan$\delta$ decreases with frequency and increases with temperature and it is considered to be caused by conductive carriers within specimen. Over 500[Hz], it is the reverse and we thought that it was caused by decrease of relaxation time due to Debye theory, EVA has tan$\delta$with the values of 10$^{-2}$ ~10$^{-3}$ , which is higher than that of LLDPE, and it has inflection point at 60[Hz]. It is shown that Dielectric characteristics of EVA are similar to LLDPE's.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.4
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• pp.293-297
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• 2020

This paper tried to find the best conditions that could be applied to solar cells by deposition of CdS thin film on ITO glass using multiplex displacement sputter system. RF power was changed to 50W, 100W, and 150W and sputtering time was set to 10 minutes. As a result of the measurement of transmittance, the average transmittance in the area of 400 to 800 nm was measured from 60% to 80% and the best characteristic was measured at 150W at 84%. The band gap was also measured at 3.762eV at 50W, 4.037eV at 100W and 4.052eV at 150W. In XRD analysis, even as RF power was increased, it was observed as a structure called Wurtzite (hexagonal) of CdS. And as RF power increased, the particles were large and uniformly deposited, but at 100W the particles were densely composed and dense. And the thickness measurement showed that the RF power increased uniformly.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.148-148
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• 2010

플래시 메모리로 대표되는 비휘발성 메모리는 IT 기술의 발달에 힘입어 급격한 성장세를 나타내고 있지만, 메모리 소자의 크기가 작아짐에 따라서 그 물리적 한계에 이르러 차세대 메모리에 대한 요구가 점차 높아지고 있는 실정이다. 따라서, 이러한 문제점에 대한 대안으로서 고속 동작 및 정보의 저장 시간을 향상 시킬 수 있는 nano-floating gate memory (NFGM)가 제안되었다. Nano-floating gate에서 사용되는 nanocrystal (NCs) 중에서 Si nanocrystal은 비휘발성 메모리뿐만 아니라 발광 소자 및 태양 전지 등의 매우 다양한 분야에 광범위하게 응용되고 있지만, NCs의 크기와 밀도를 제어하는 것이 가장 중요한 문제로 이를 해결하기 위해서 많은 연구가 진행되고 있다. 또한, 소자의 소형화가 이루어지면서 기존의 플래시 메모리 한계를 극복하기 위해서 터널베리어에 관한 관심이 크게 증가했다. 특히, 최근에 많은 주목을 받고 있는 개량형 터널베리어는 크게 VARIOT (VARIable Oxide Thickness) barrier와 CRESTED barrier의 두 가지 종류가 제안되어 있다. VARIOT의 경우에는 매우 얇은 두께의low-k/high-k/low-k 의 적층구조를 가지며, CRESTED barrier의 경우에는 반대의 적층구조를 가진다. 이와 같은 개량형 터널 베리어는 전계에 대한 터널링 전류의 감도를 증가시켜서 쓰기/지우기 특성을 향상시키며, 물리적인 절연막 두께의 증가로 인해 데이터 보존 시간의 향상을 달성할 수 있다. 본 연구에서는 박막의 $SiO_2$와 $Si_3N_4$를 적층한 VARIOT 타입의 개량형 터널 절연막 위에 전하 축적층으로 $SiN_x$층의 내부에 Si-NCs를 갖는 비휘발성 메모리 소자를 제작하였다. Si-NCs를 갖지 않는 $SiN_x$전하 축적층은 Si-NCs를 갖는 전하 축적층보다 더 작은 메모리 윈도우와 열화된 데이터 보존 특성을 나타내었다. 또한, Si-NCs의 크기가 감소됨에 따라 양자 구속 효과가 증가되어 느린 지우기 속도를 보였으나, 데이터 보존 특성이 크게 향상됨을 알 수 있었다. 그러므로, NFGM의 빠른 쓰기/지우기 속도와 데이터 보존 특성을 동시에 만족하기 위해서는 Si-NCs의 크기 조절이 매우 중요하며, NCs크기의 최적화를 통하여 고집적/고성능의 차세대 비휘발성 메모리에 적용될 수 있을 것이라 판단된다.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.151-154
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• 2001

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and $IrO_2$ are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in $O_2$ ambient. The leakage current mechanisms of PLZT capacitors with Pt and $IrO_2$ top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.180-187
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• 1997

$La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$ interconnector films ior pimar rypn solid oxide fuel (,ells were prepared under various sinteririg conditions and their bending strength. relative ilerisit~. m t l c:lec ~ ~ - i i ; i l condl~cti\.lt\ were niexiureti in order to study their mechanical and electrical propertics Th' Irndirig sriength of $La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$ lt the room temperature \vas increased with increasing sinrering temperature dnfl tinic. The relative densit\- of more than 94% was ohtained 1)). sintering at $1400^{\circ}C$ for 5hrs. The present irlvestigiition rovcals thcit sirileririg of $La_{0.68}Ca_{0.32}Cr_{0.97}O_{3}$ at lorn. temperature xyvas greatly assisted by formation oi Ca,,,(CrO,),, Also the i,leitriczl conductivity at $1000^{\circ}C$ \vas more than 100S; cm d t e r heating at $1400^{\circ}C$ for 7hrs.

• Analytical Science and Technology
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• v.22 no.3
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• pp.247-253
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• 2009

Porous silicon films are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid(HF). Careful control of etching conditions (current density, etch time, HF concentration) provides films with precise, reproducible physical parameters (morphology, porosity and thickness). The etched pattern could be varied due to (1) current density controls pore size (2) etching time determines depth and (3) complex layered structures can be made using different current profiles (square wave, triangle, sinusoidal etc.). The optical interference spectrum from Fabry-Perot layer has been used for forensic applications, where changes in the optical reflectivity spectrum confirm the identity. We will explore a method of identifying the specific pattern code and can be used for identities of individual code with porous silicon based encoded nanosized smart particles.

• Journal of Bio-Environment Control
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• v.25 no.2
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• pp.89-94
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• 2016

This study was conducted to determine the optimum nutrient solution, pH, irrigation interval, light intensity and planting density to growth of common ice plant (Mesembryanthemum crystallinum L.) in a closed-type plant production system. Three-band radiation type fluorescent lamps with a 12-h photoperiod were used. Nutrient film technique systems with three layers were used for the plant growth system. Environmental conditions, such as air temperature, relative humidity and $CO_2$ concentration were controlled by an ON/OFF operation. Treatments were comparison of the nutrient solution of Horticultural Experiment Station in Japan (NHES) and the nutrient solution of Jeju National University (NJNU), pH 6.0 and 7.0, irrigation interval 5 min and 10 min, light intensity 90 and $180{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, and within-row spacing 10 cm, 15 cm, 20 cm and 25 cm with between-row spacing 15 cm. Optimum macronutrients were composed N 7.65, P 0.65, K 4.0, Ca 1.6 and Mg $1.0mM{\cdot}L^{-1}$. There were no significant interactions between pH 6.0 and 7.0 about shoot fresh weight and shoot dry weight of common ice plant. Irrigation interval 5 min and 10 min was also the same result. Shoot fresh weight and shoot dry weight were highest at $180{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. Shoot fresh weight and shoot dry weight were decreased according to increasing the planting density. From the above results, we concluded that optimum nutrient solution, optimum levels of pH, irrigation interval, light intensity and planting density were 6.0-7.0 and 10 min, $180{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ and $15{\times}15cm$, respectively for growth of common ice plant in a closed-type plant production system.

• Horticultural Science & Technology
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• v.28 no.4
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• pp.580-584
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• 2010

The effect of planting densities on the growth of $Sedum$ $samentosum$ (4 collections) was investigated using nutrient film technique (NFT) with Yamazaki' lettuce nutrient solution (1982) from September 5th to October 24th in non-heating plastic film house. At 40 days, the plant height of 4 collections showed the range of 15.0-18.9 cm, and mean plant height was high the order of $10{\times}10$, $2.5{\times}2.5$, and $5{\times}5cm$. The growth of 'Pohang' and 'Wando' collections was better compared to that of 'Gunsan' and 'Wanju' collections. Number of node, stem diameter, and fresh and dry weight per plant were decreased in higher planting density. Despite the lower fresh weight per plant obtained, the fresh yield per $m^2$ was significantly increased in higher planting density. The mean fresh yield was $14.9kg{\cdot}m^{-2}$ in $2.5{\times}2.5cm$, and 'Pohang' collection showed the highest fresh yield ($17.6kg{\cdot}m^{-2}$). The first optimized harvesting time base on plant height was 30-40 days after NFT culture during autumn season. In eating quality, compression force of stem and bitterness of shoot were decreased in higher planting density. However, the heavy labor demanding high density cutting needs to be improved for hydroponic culture of $S.$ $samentosum$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.