• Membrane Journal
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• v.31 no.6
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• pp.417-425
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• 2021

As the demand for high-capacity batteries increases, there has been growing researches on the lithium metal anode with a capacity (3,860 mAh/g) of higher than that of conventional one and a low electrochemical potential (-3.040 V). In this study, using the anatase phased TiO₂ nanoparticles synthesized by hydrothermal synthesis, a PVdF-HFP/TiO₂ organic/inorganic composite material was designed and used as an interfacial protective layer for a Li metal anode. As-formed organic/inorganic-lithium composite thin film was confirmed through the crystalline structure and morphological analyses. In addition, the electrochemical test (cycle stability and voltage profile) confirmed that the protective layer of PVdF-HFP/TiO₂ composite (10 wt% TiO₂ and 1.1 ㎛ film thickness) contributed to the enhanced electrochemical performance of the lithium metal anode (Colombic efficiency retention: 90% for 77 cycles). Based on comparative test with the untreated lithium electrode, it was confirmed that our protective layer plays an important role to stabilize/improve the EC performance of the lithium metal negative electrode.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.778-783
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• 2000

Effects of the $Al_2$O$_3$surface protective layer, deposited on the SnO$_2$sensing layer by aerosol flame deposition (AFD) method, on the sensing properties of SnO$_2$thin film ags sensors were investigated.Effects of Pt doping to the $Al_2$O$_3$surface protective layer on the selectivity of CH$_4$ gas were also investigated. 0.3$\mu\textrm{m}$ thick SnO$_2$thin sensing layers on Pt electrodes were prepared by R.F. magnetron sputtering with R.F. power of 50 W, at working pressure of 4mTorr, and at 20$0^{\circ}C$ for 30 min. $Al_2$O$_3$surface protective layers on SnO$_2$layers were prepared by AFD using a diluted aluminum nitrade (Al(NO$_3$).9$H_2O$) solution. The sensitivity of CO gas in the SnO$_2$gas sensor with an $Al_2$O$_3$surface protective layer was significantly decreased. But that of CH$_4$gas remained almost same with pure SnO$_2$gas sensor. This result shows that the selectivity of CH$_4$gas is increased because of the $Al_2$O$_3$surface protective layer. In the case of SnO$_2$gas sensors with Pt-doped $Al_2$O$_3$surface protective layers, low sensing property to CO gas and high sensing property to CH$_4$were observed. This results in the increasing of selectivity of CH$_4$gas selectivity are discussed.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.199-203
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• 2000

$Ta_2_O5$ and $Sr_0.8Bi_2.4Ta_2O_9$ films were deposited on p-type Si(100) substrates by a rf-magnetron sputtering and the metal organic decomposition (MOD), respectively.The electrical characteristics of the $Pt/SBT/Ta_2O_5/Si$ structure were obtained as the functions of $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering and $Ta_2_O5$ thickness. And to certify the role of $Ta_2_O5$ as a buffer layer, the electrical characteristics of $Pt/SBT/Ta_2O_5/Si$ were compared. $Pt/SBT/Ta_2O_5/Si$ capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering did now show typical C-V curve of metal/ferroelectric/insulator/semiconductor (MFIS) structure. The capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering had the largest memory window. And the memory window was decreased as the $Ta_2_O5$ gas flow ratio during the $Ta_2_O5$ sputtering was increased to 40%, 60%. In the C-V characteristics of the $Pt/SBT/Ta_2O_5/Si$ capacitors with the different $Ta_2_O5$ thickness, the capacitor with 26nm thickness of $Ta_2_O5$ had the largest memory window. The C-V and leakage current characteristics of the Pt/SBT/Si structure were worse than those of $Pt/SBT/Ta_2O_5/Si$ structure. These results and Auger electron spectroscopy (AES) measurement showed that $Ta_2_O5$ films as a buffer layer tool a role to prevent from the formation of intermediate phase and interdiffusion between SBT and Si.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Journal of the Korean Electrochemical Society
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• v.22 no.3
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• pp.128-137
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• 2019

A lithium is the lightest metal on the earth. It has some attractive characteristics as a negative electrode material such as a low reduction potential (-3.04 V vs. SHE) and a high theoretical capacity ($3,860mAh\;g^{-1}$). Therefore, it has been studied as a next generation anode material for high energy lithium batteries. The thin lithium electrode is required to maximize the efficiency and energy density of the battery, but the physical roll-press method has a limitation in manufacturing thin lithium. In this study, thin lithium electrode was fabricated by electrodeposition under various conditions such as compositions of electrolytes and the current density. Deposited lithium showed strong relationship between process condition and its characteristics. The concentration of electrolyte affects to the shape of deposited lithium particle. As the concentration increases, the shape of particle changes from a sharp edged long one to a rounded lump. The former shape is favorable for suppressing dendrite formation and the elec-trode shows good stripping efficiency of 92.68% (3M LiFSI in DME, $0.4mA\;cm^{-2}$). The shape of deposited particle also affected by the applied current density. When the amount of current applied gets larger the shape changes to the sharp edged long one like the case of the low concentration electrolyte. The combination of salts and solvents, 1.5M LiFSI + 1.5M LiTFSI in DME : DOL [1 : 1 vol%] (Du-Co), was applied to the electrolyte for the lithium deposition. The lithium electrode obtained from this electrolyte composition shows the best stripping efficiency (97.26%) and the stable reversibility. This is presumed to be due to the stability of the surface film induced by the Li-F component and the DOL effect of providing film flexibility.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.134-135
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• 2011

양자점은 전자와 양공을 3차원으로 속박 시키므로 기존의 bulk나 양자우물보다 양자점을 이용한 레이저 다이오드의 경우 낮은 문턱 전류, 높은 미분이득 및 온도 안전성의 장점이 있을 거라 기대되고 있다. 그러나, 양자점은 낮은 areal coverage 때문에 높은 속박효율을 얻지 못하고 있다. 이러한 양자점의 문제점을 해결하기 위해 양자점을 양자우물 안에 성장시켜 운반자들의 포획을 향상시키는 방법들이 연구되고 있다. 양자우물 안에 양자점을 넣으면 양자우물이 운반자들의 포획을 증가 시키고, 열적 방출도 억제하여 온도 안정성이 향상 되는 것으로 알려져 있다. 광통신 대역의 1.3 ${\mu}m$ 경우, GaAs계를 이용하여 InAs 양자점을 strained InGaAs 박막을 우물층으로 한 dot-in-a-well 구조의 연구는 몇몇 보고된 바 있다. 그러나 InP계를 사용하는 1.55 ${\mu}m$ 대역에서 dot-in-a-well구조의 연구는 아직 미미하다. 본 연구에서는 유기 금속 화학 증착법(metal organic chemical vapor deposition)을 이용하여 InP 기판 위에 InAs 양자점을 자발성장법으로 성장하였으며 dot-in-a-well 구조에서 우물층으로 1.35 ${\mu}m$ 파장의 $In_{0.69}Ga_{0.31}As_{0.67}P_{0.33}$ (1.35Q)를, 장벽층으로는 1.1 ${\mu}m$ 파장의 $In_{0.85}Ga_{0.15}As_{0.32}P_{0.68}$(1.1Q)를 사용하였다. 양자우물층과 장벽층은 모두 InP 기판과 격자가 일치하는 조건으로 성장하였다. III족 원료로는 trimethylindium (TMI)와 trimethylgalium (TMGa)을 사용하였으며 V족 원료 가스로는 $PH_3$ 100%, $AsH_3$ 100%를, carrier gas로는 $H_2$를 사용하였다. InP buffer층의 성장 온도는 640$^{\circ}C$이며 양자점 성장 온도는 520$^{\circ}C$이다. 양자점 형성은 원자력간 현미경(Atomic force microscopy)를 이용하여 확인하였으며, 박막의 결정성은 쌍결정 회절분석(Double crystal x-ray deffractometry)를 이용하여 확인하였다. 확인된 성장 조건을 이용하여 양자점 시료를 성장하였으며 광여기분광법(Photoluminescence)을 이용하여 광특성을 분석하였다. Fig. 1은 dot in a barrier 와 dot-in-a-well 시료의 성장구조이다. Fig. 1(a)는 일반적인 dot-in-a-barrier 구조로 InP buffer층을 성장하고 1.1Q를 100 nm 성장한 후 양자점을 성장하였다. 그 후 1.1Q 100 nm와 InP 100 nm로 capping하였다. Fig. 1(b)는 dot-in-a-well 구조로 InP buffer층을 성장하고 1.1Q를 100 nm 성장 후 1.35Q 우물층을 4 nm 성장하였다. 그 위에 InAs 양자점을 성장하였다. 그 후에 1.35Q 우물층을 4 nm 성장하고 1.1Q 100 nm와 InP 100 nm로 capping하였다. Fig. 2는 dot-in-a-barrier 시료와 dot-in-a-well 시료의 상온 PL data이다. Dot-in-a-barrier 시료의 PL 파장은 1544 nm이며 반치폭은 79.70 meV이다. Dot-in-a-well 시료의 파장은 1546 nm이며 반치폭은 70.80 meV이다. 두 시료의 PL 파장 변화는 없으며, 반치폭은 dot-in-a-well 시료가 8.9 meV 감소하였다. Dot-in-a-well 시료의 PL peak 강도는 57% 증가하였으며 적분강도(integration intensity)는 45%가 증가하였다. PL 데이터에서 높은 에너지의 반치폭 변화는 없으며 낮은 에너지의 반치폭은 8 meV 감소하였다. 적분강도 증가에서 dot-in-a-well 구조가 dot-in-a-barrier 구조보다 전자-양공의 재결합이 증가한다는 것을 알 수 있으며, 반치폭 변화로부터 특히 높은 에너지를 갖는 작은 양자점에서의 재결합이 증가 된 것을 알 수 있다. 이는 양자우물이 장벽보다 전자-양공의 구속력을 증가시키기 때문에 양자점에 전자와 양공의 공급을 증가시키기 때문이다. 따라서 낮은 에너지를 가지는 양자점을 모두 채우고 높은 에너지를 가지는 양자점까지 채우게 되므로, 높은 에너지를 가지는 양자점에서의 전자-양공 재결합이 증가되었기 때문이다. 뿐만 아니라 파장 변화 없이 PL peak 강도와 적분강도가 증가하고 낮은 에너지 쪽의 반치폭이 감소한 것으로부터 에너지가 낮은 양자점보다는 에너지가 높은 양자점에서의 전자-양공 재결합율이 급증하였음을 알 수 있다. 우리는 이와 같은 연구에서 InP계를 이용해 1.55 ${\mu}m$에서도 dot in a well구조를 성장 하여 더 좋은 특성을 낼 수 있으며 앞으로 많은 연구가 필요할 것이라 생각한다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

• Solar Energy
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• v.10 no.3
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• pp.60-65
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• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• Journal of the Korean Society of Radiology
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• v.3 no.3
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• pp.37-40
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• 2009

In this study, we made a high efficiency x-ray detecting sensor using the lead oxide(PbO) that are used in direct method of x-ray detector. PbO with nano size particles is produced by sol-gel method for high efficiency. The produced PbO with nano size is deposited on ITO(Induim Tin Oxide) glass in several temperature using the PIB(particle-in-binder) method. The thickness of the deposited PbO is about $200{\mu}m$. Through the measurement of dark current, sensitivity and SNR(Signal To Noise Ratio), an electrical properties of the produced PbO film are analyzed. Therefore, we show that an electrical properties are changed according to a temperature and that the PbO film that was treated at $500^{\circ}C$ in O2 atmosphere is the most high efficiency x-ray detecting sensor.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.214-220
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• 2013

Hydrophobic coating on a silicate-based yellow phosphor ($Sr_2SiO_4:Eu^{2+}$) was carried out by using hexamethyldisiloxane (HMDSO) precursor in an atmospheric pressure dielectric barrier discharge plasma reactor, eventually to improve the long-term stability and reliability of the phosphor. The phosphor powder samples were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM), a fluorescence spectrophotometer and a contact angle analyzer. After the coating was prepared, the contact angle of the phosphor powder increased to $133.0^{\circ}$ for water and to $140.5^{\circ}$ for glycerol, indicating that a hydrophobic layer was formed on its surface. The phosphor coated with HMDSO exhibited photoluminescence enhancement up to 7.8%. The SEM and TEM images of the phosphor powder revealed that the plasma coating led to a morphological change from grain-like structure to smooth surface with 31~46 nm thick hydrophobic layer. The light emitting diode (3528 1 chip LED) fabricated with the coated phosphor showed a substantial enhancement in the reliability under a special test condition at $85^{\circ}C$ and 85% relative humidity for 1,000 h (85/85 testing). The plasma-mediated method proposed in this work may be applicable to the formation of 3-dimensional coating layer on irregular-shaped phosphor powder, thereby improving the reliability.