• Title/Summary/Keyword: 박막트랜지스터액정표시장치

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A Design for the Automated Process of LCD Module Assembly Line (LCD 모듈 조립라인의 공정 자동화 설계)

  • Song, Chun-Sam;Kim, Joo-Hyun;Kim, Jong-Hyeong
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.5
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    • pp.162-165
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    • 2007
  • TFT-LCD process has two advantages as compared with the semiconductor-process. It is that cycle time is short and number of the final products are small. But it needs complicated inspection / assembly line to be treated manually and much higher labor costs in the TFT-LCD process. Also, It is necessary to build PICS(Production Information and Control System) which is automated and intelligent. In this paper, an automated process of LCD module assembly line that can increase productivity and reduce the cost of production to strengthen the competitiveness corresponding with global market is planned in comparison with its manual/semi-auto. It is noted that The automated line for COG$\sim$FOG process replacing with the existing facilities had the following effects; the productivity is increased to about 1.5 times and labor cost reduced 85%. In addition, whole assembly line can be short and simple.

Electrical Properties of Transparent Indium-Tin-Zinc Oxide Semiconductor for Thin-Film Transistors

  • Lee, Gi-Chang;Choe, Jun-Hyeok;Han, Eon-Bin;Kim, Don-Hyeong;Lee, Jun-Hyeong;Kim, Jeong-Ju;Heo, Yeong-U
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.159-159
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    • 2008
  • 투명전도체 (transparent conducting oxides: TCOs) 는 일반적으로 $10^3\Omega^{-1}Cm^{-1}$의 전도도, 가시광 영역에서 80%이상의 투명성을 가지는 재료로서, 액정 박막 표시 장치(TFT-LCD), 광기전성 소자, 유기 발광 소자, 에너지 절약 창문, 태양전지(sollar cell) 등 전극으로 사용되고 있다. 최근에는 TCO의 전도도특성을 조절하여 반도성특성을 가진 투명 산화물 반도체(transparent oxide semiconductor: TOS) 을 이용한 박막 트랜지스터 연구가 활발히 진행 중이다. 기존의 실리콘을 기반으로 하는 박막 트랜지스터의 낮은 이동도, 불투명성의 특성을 가지고 있지만, 산화물 박막트랜지스터는 높은 이동도를 발현 할 수 있을 뿐만 아니라, 넓은 밴드갭 에너지를 갖는 산화물을 이용하므로 투명한 특성도 발현 할 수 있어 차세대 디스플레이의 구동소자로서 응용연구가 되고 있다. 이에 본 연구에서는 박막트랜지스터 channel layer로서의 Indium-Tin-Zinc oxide 적용특성을 조사하였다. Indium, Tin, Zinc 의 혼합비율을 다양하게 조절하여 타겟을 제작하였다. 이를 RF magnetron sputtering 를 이용하여 박막으로 성장시켰으며, 기판으로는 glass 기판을 사용하였다. 박막 성장시 아르곤과 산소의 비율을 다양하게 조절하였다. 성장시킨 박막은 Hall effect, Transmittance, Work function, XRD등을 이용하여 전기적, 광학적, 구조특성을 평가하였다. Indium-Tin-Zinc Oxide(ITZO) 을 channel layer로 사용하여 Thin-film transistor 을 제작하여, TFT의 I-V 및 stability특성을 평가하였다.

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A Study of Head Up Display System for Next Generation Vehicle (차세대 자동차 통합스마트 모니터 시스템에 관한 연구)

  • Yun, Sung-Ha;Son, Hui-Bae;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.3
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    • pp.439-444
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    • 2011
  • In this paper, we implemented the intelligent smart monitor system for next generation which is most commonly viewed information in a vehicle from the instrument cluster, where speed, tachometer, fuel, engine temperature, fuel gauge, turn indicators and warning lights and provide the driver with an array of informations. Designed Smart HUD(Head-Up-Display) monitor system is composed TFT LCD, LCD Back light led, plane mirror, lens and controllers parts and it was assembled to intelligent integrated smart monitor system. Finally, we analyze intelligent integrated smart monitor system for driver safety vehicles and present the possibility to apply to smart intelligent HUD total monitor system for next generation.

Room Temperature Fabrication of Silicon Oxide Thin Films by ECR PECVD (ECR PECVD 에 의한 상온 실리콘 산화막 형성)

  • 이호영;전유찬;주승기
    • Journal of the Korean Vacuum Society
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    • v.2 no.4
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    • pp.462-467
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    • 1993
  • ECR PECVD(Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition )장치를 이용하여 (100) 실리콘 기판 위에 실리콘 산화막을 상온에서 증착하였다. 기체 유량비(SiH4/O2)가 막의 성질에 미치는 영향을 고찰하여 최적의 증착 조건을 도출하였다. 기체 유량비가 0.071일 때 비가역 파괴 전장은 9~10MV/cm 이었고, 4~5MV/cmm의 전장하에서 누설 전류는 ~10-11 A/$ extrm{cm}^2$이었다. 이러한 수치들은 액정 표시 소자용 박막 트랜지스터와 같이 저온의 제조공정이 요구되는 소자를 만들기에 충분하다.

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A Study of Intelligent Head Up Display System for Next Generation Vehicle (차세대 자동차를 위한 HUD 모니터 시스템에 관한 연구)

  • Yun, Sung-Ha;Son, Hui-Bae;Rhee, Young-Chul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.4 no.1
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    • pp.23-31
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    • 2011
  • In this paper, the intelligent smart monitor system is implemented for the next generation vehicle. to mitigate the numerous effects of distractions within the vehicle, it is vital to put critical information where the driver can use it without affection focus on the road ahead. Audible alarms are useful supplements when used in conjunction with visual displays. But driving is an overwhelmingly visual task. To optimize a vehicle's active safety systems, more than just audible alarms are necessary. The driver needs a visual interface that focuses his or her attention on the road ahead. The most commonly viewed information in a vehicle is from the instrument cluster, where speed, tachometer, fuel, engine temperature, fuel gauge, turn indicators and warning lights provide the driver with an array of fundamental information. TFT LCD, LCD Back light led, plane mirror, lens and controllers parts were designed to intelligent integrated smart monitor system. Finally, in this paper, we analyze intelligent integrated smart monitor system for driver safety vehicles.

Study on The Anti-Shock Performance Evaluation of TFT-LCD module for Mobile IT Devices (이동형 정보통신 기기용 화면표시 장치의 내충격 평가 방법 연구)

  • Kim Byung-Sun;Kim Jung-Woo;Lee Dock-Jin;Choi Jae-Boong;Kim Young-Jin;Baik Seung-Hyun;Chu Young-Bee;Koo Ja-Choon
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.7 s.184
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    • pp.130-137
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    • 2006
  • TFT-LCD(Thin Film Transistor Liquid Crystal Display) module is representative commercial product of FPD(Flat Panel Display). Thickness of TFT-LCD module is very thin. It is adopted for major display unit for IT devices such as Cellular Phone, Camcorder, Digital camera and etc. Due to the harsh user environment of mobile IT devices, it requires complicated structure and tight assembly. And user requirements for the mechanical functionalities of TFT-LCD module become more strict. However, TFT-LCD module is normally weak to high level transient mechanical shock. Since it uses thin crystallized panel. Therefore, anti-shock performance is classified as one of the most important design specifications. Traditionally, the product reliability against mechanical shock is confirmed by empirical method in the design-prototype-drop/impact test-redesign paradigm. The method is time-consuming and expensive process. It lacks scientific insight and quantitative evaluation. In this article, a systematic design evaluation of TFT-LCD module for mobile IT devices is presented with combinations of FEA and testing to support the optimal shock proof display design procedure.

No.1 Safety Engineer - 아사히초자화인테크노한국(주) 김태권 과장

  • Kim, Seong-Dae
    • The Safety technology
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    • no.194
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    • pp.24-25
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    • 2014
  • 최근 스마트폰, 태블릿 PC 등 각종 디지털기기가 대중화되면서 디스플레이(화면) 산업도 다양한 변화를 맞았다. 이러한 디스플레이 산업의 발달은 유리 소재에 대한 기술 개발을 더욱 촉진하는 역할을 하고 있다. 경북 구미시에 위치한 아사히초자화인테크노한국(이하 AFK)은 전 세계 디스플레이용 글라스 시장에서 압도적인 점유율을 기록하고 있는 일본의 AGC 그룹에 의해 2004년 설립된 곳이다. 특히 AFK는 박막 트랜지스터 액정표시장치인 TFT-LCD 용 유리 기판을 제조하는 곳으로 AGC 그룹의 디스플레이용글라스에 관한 최점단 기술이 집결된 곳이라고 할 수 있다. 이곳 AFK에서 안전관리업무를 맡고 있는 이가 오늘의 주인공인 김태권 과장이다. 그는 회사 설립 초기부터 자체적인 안전시스템을 구축해 나가면서 고도의 기술력과 안전이 조화된 일터를 만들어가고 있다. 안전관리업무의 좋은 본보기가 되고 있는 김태권 과장을 찾아가 그만의 안전철학을 들어봤다.

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Temperature-Dependence of Poly-Si Thin film Transistors (다결정 실리콘 박막 트랜지스터의 온도 의존성)

  • 이정석;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1999.05a
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    • pp.403-406
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    • 1999
  • The influence of temperature variation (25~125$^{\circ}C$) on poly-Si thin-film transistors (TFT's) was investigated by examining the electrical properties change of poly-Si films formed by solid phase crystallization (SPC). The n-channel poly-Si TFT's fabricated by SPC with channel length of 1.5 and loon ,respectively, exhibit good characteristics with a high ${\mu}$$\sub$FE/ ($\geq$82 and $\geq$60$\textrm{cm}^2$/V-s in 1.5 and 10$\mu\textrm{m}$, respectively), low V$\sub$t/, ($\leq$1.52 and $\leq$ 2.75V in 1.5 and 10$\mu\textrm{m}$, respectively), low S$\sub$t/, and good ON-OFF characteristics in spite of temperature variation. Thus, poly-Si films formed by SPC can be applied for the application to poly-Si TFT liquid crystal display with peripheral integrated circuits.

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Integrated IR Photo Sensor for Display Application (디스플레이 패널에 집적이 가능한 적외선 포토센서)

  • Jeon, Ho-Sik;Heo, Yang-Wook;Lee, Jae-Pyo;Han, Sang-Youn;Bae, Byung-Seong
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.11
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    • pp.1164-1169
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    • 2012
  • This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a-SiGe:H TFT was suitable for IR.