• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.81-90
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• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.252-253
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• 2000

본 실험에서는 수 MW/$ extrm{cm}^2$ 의 매우 낮은 영역의 세기에서 순수한 GaAs의 bulk에 대하여 실험한 결과 비선형 흡수가 나타남을 관찰 하였으며, 더불어 자유전하 흡수 계수를 여러 가지 세기의 빛에서 측정한 결과 자유전하 흡수 단면적이 빛의 세기에 따라 변화하는 것을 관찰하였다.$^{(1)}$ GaAs의 굴절률이 3.6으로 매우 커서 Fabry-Perot 효과가 나타나므로 시료의 한쪽 면을 SiN로 무반사 코팅을 하여 실험 하였다. GaAs의 표면은 쉽게 레이저 빛에 의해 손상을 입는 것을 고려하여 같은 자리에서 여러 번의 실험을 하여 같은 결과가 나오는 것을 확인하여 실험 결과를 얻었다. 사용된 레이저는 Nd:YAG 레이저로서 1.064 $mu extrm{m}$의 파장에서 7 나노초의 펄스를 방출한다. 빛의 세기는 편광기와 half wave plate를 이용하여 변화 시켰다. (중략)

• Korean Journal of Optics and Photonics
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• v.13 no.6
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• pp.506-509
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• 2002

An optical system for a stereoscopic video recorder is designed with the field of view 42$^{\circ}$ and effective diameter 22 mm. We can use it by attaching it to the front lens of any video camera or camcorder to record a stereoscopic scene. This system is a double Kepler type afocal system to make the image erect and a bi-ocular type to record and display the stereoscopic scene. The optical tube length is folded with several flat mirrors and a beam splitter to be compact. This optical system is composed of 4 groups of lenses and each group serves as a relay lens for minimizing the vignetting effect. Whole field stereoscopic scenes may be captured by perpendicularly polarized alternated recording with a chopper and two perpendicular polarizers, without any loss of light energy. The displayed images may be seen stereoscopically with polarized spectacles and are kinetic because of an afterimage effect.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.156-161
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• 1998

We developed aerosol flame deposition method and made stress-free Pyrex-based optical waveguide on silicon substrate using this method. Zr is doped to control the refractive index of Pyrex waveguide layers. The refractive index of the film changes from 1.460 to 1.475 as the content of Zr changes from 0 to 3 wt%. Er is doped to see the possibility of applying this Pyrex waveguide as PLC-type (Planar Lightwave Circuit) optical amplifier. The refractive index of the film changes from 1.460 to 1.465 as the content of Zr changes from 0 to 1 wt%. Light launching using a prism coupler to the fabricated waveguide showed good quality for application to PLC. The polarization dependence of refractive-index of the Pyrex film is measured to be less than $2{\times}10^{-4}$.

• Korean Journal of Optics and Photonics
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• v.23 no.6
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• pp.264-268
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• 2012

In this paper, we propose a new method for broadcasting in a WDM-PON system which has the merits of a simple and cost effective structure. It can be constructed using only an ASE (Amplified Spontaneous Emission) light source and a PI-RSOA (Polarization Independent - Reflective Semiconductor Optical Amplifier). Error-free broadcast signal transmission over 30 Km for 24 channels at 1.25 Gb/s has been successfully demonstrated.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.56-61
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• 1997

I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As pseudomorphic high electron mobility transistor (P-HEMT) structures were grown on semi-insulating InP substrates by molecular beam epitzxy method. The hall effect measuremetn was used to measure the electrical properties and the photoluminescence (PL) measurement was used to measure the electrical properties and the photoluminescence(PL) measurement for optical propety. By the cross-sectional transmission electron microscopy (XTEM) investigation of the V and X shape defects including slip with angle of 60.deg. C and 120.deg. C to surface in the sampel, the defects formation mecahnism in the I $n_{0.52}$A $l_{0.48}$As epilayers on InP substrates could be explained with the different thermal expansion coefficients between I $n_{0.52}$A $l_{0.48}$As epilayers and InP substrate.d InP substrate.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.12 no.5
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• pp.1-12
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• 2013

Road's accidents caused by Ice, snow, Wet of roads surface conditions and weather conditions situations that are constantly occurring. That is, driver's negligence and safe driving ability of individuals due to lack of awareness, and Road management main agent(the government and the public, etc.) due to road conditions, if there is insufficient information. So Related research needs is a trend that is required. In this study, gather Camera(Stereo camera)'s image data, and analysis polarization coefficients and wavelet transform. And unlike traditional single-dimensional classification algorithms as multi-dimensional analysis by using SVM classification techniques, develop an algorithm to determine road conditions. Four on the road conditions (dry, wet, snow, ice) recognition success rate for the detection and analysis of experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.358-359
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• 2012

최근 분극 특성이 상이한 무분극 GaN 에피성장에 관한 심도 있는 연구와 함께 전자-전공 캐리어의 주입 및 캐리어의 거동, 방출되는 편광 특성 및 다양한 물리적 특성들에 대해 보고되고 있으며, 광학적 특성 및 물리적 특성의 확보를 위한 많은 연구가 활발히 진행 중이다 [1]. GaN의 ohmic 접촉(ohmic contact)의 형성은 발광 다이오드(light emitting diode), 레이저 다이오드(Laser), 태양전지(solar cell)와 같은 고신뢰도, 고효율 광전자 소자를 제조하기 위해서는 매우 중요하다 [2]. 그러나 이와 함께 병행 되어야 할 무분극 p-GaN 의 ohmic contact에 관한 연구는 많이 이루어지고 있지 않는 실정이다. 따라서 본 논문에서는 r-plane 사파이어 기판 상에 성장된 p-GaN에서의 ohmic 접촉 형성 연구를 위하여 Ni/Au ohmic 전극의 접촉저항 특성을 연구하였다. 본 실험에서는 성장된 a-plane GaN의 Hole농도가 $3.09{\times}1017cm3$ 인 시편을 사용하였다. E-beam evaporation 장비를 이용하여 Ni/Au를 각각 20 nm 그리고80 nm 증착 하였으며 비접촉저항을 측정하기 위해 Circle-Transfer Length Method (C-TLM) 패턴을 사용하였다. 샘플은 RTA (Rapid Thermal Annealing)를 사용하여 $300^{\circ}C$에서 $700^{\circ}C$까지 온도를 변화시키며 전기적 특성을 비교하여 그림 1(a) 나타내었다. 그림에서 알 수 있듯이 $400^{\circ}C$에서 가장 낮은 비접촉저항 값인 $6.95{\times}10-3{\Omega}cm2$를 얻을 수 있음을 발견하였다. 이 때의 I-V curve 도 그림1(b)에 나타낸 바와 같이 열처리에 의해 크게 향상됨을 알 수 있다. 그러나, $500^{\circ}C$ 이상 온도를 증가시키면 다시 비접촉 저항이 증가하는 것을 관찰하였다. XRD (x-Ray Diffraction) 분석을 통하여 $400^{\circ}C$ 이상열처리 온도가 증가하면 금속 표면에 $NiO_2$가 형성되며, 이에 따라 오믹특성이 저하 된다고 사료된다. 또한 $Ni_3N$의 존재를 확인 하였으며 이는 nonpolar surface의 특성으로 인해 nitrogen out diffusion 현상이 동시에 발생하여 계면에는 dopant로 작용하는 질소 공공을 남기고 표면에 $Ni_3N$을 형성하여 ohmic contact의 특성이 저하되기 때문인 것으로 사료된다.

• Korean Journal of Optics and Photonics
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• v.24 no.5
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• pp.224-230
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• 2013

Laser Lift-Off (LLO) is a process that removes a GaN or AIN thin layer from a sapphire wafer to manufacture vertical-type LEDs. It consists of a light source, an attenuator, a mask, a projection lens and a beam homogenizer. In this paper, we design an attenuator and a projection lens. We use the 'ZEMAX' optical design software for analysis of depth of focus and for a projection lens design which makes $7{\times}7mm^2$ beam size by projecting a beam on a wafer. Using the 'LightTools' lighting design software, we analyze the size and uniformity of the beam projected by the projection lens on the wafer. The performance analysis found that the size of the square-shaped beam is $6.97{\times}6.96mm^2$, with 91.8 % uniformity and ${\pm}30{\mu}m$ focus depth. In addition, this study performs dielectric coating using the 'Essential Macleod' to increase the transmittance of an attenuator. As a result, for 23 layers of thin films, the transmittance total has 10-96% at angle of incidence $45-60^{\circ}$ in S-polarization.

• Journal of the korean academy of Pediatric Dentistry
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• v.26 no.3
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• pp.538-553
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• 1999

The purpose of this study was to compare the shear bond strength and the anticariogenicity of glass ionomer cement with conventional bonding resin and fluoride releasing resin. After the shear bond strength test, scanning electron microscopic observation was performed for the evaluation of the fracture patterns in each group. Under the polarizing light microscope, artificially induced carious lesions were evaluated and the lesion depths of the samples were measured using image analyzing program(Image-Pro $PLUS^{TM}$, USA). 50 sound maxillary premolars were used for the bond strength test and another 30 for the anticariogenic test. Data collected were analyzed statistically using Oneway-ANOVA and Scheffe test. The results were as follows: 1. Glass ionomer groups(G-III, IV, V) generally showed the lower bond strength values than resin groups(G-I, II). 2. Among the two resin groups, G-I showed the higher bond strength than G-II without statistically significant difference between them(p>.05). 3. Within glass ionomer groups, statistical significance was found between G-III and G-V with the superior bond strength in G-V (p<.05). 4. Under the SEM, adhesive failure was the predominant fracture pattern in G-I and II, whereas cohesive failures were mainly observed in G-III. In G-IV and V, mixed type of pattern where the both fracture patterns coexisted within samples could be seen. 5. In evaluation of the depth of artificially developed carious lesion, glass ionomer group showed shallower depth than resin groups with statistical significance between G-III and G-I, II(p<.05). Among resin groups, fluoride releasing resin(G-II) showed the shallower depth than conventional resin(G-I)(p<.05).