• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.100-103
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• 2001

In this study, the adhesion and thermal property of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu/TaN/Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature far the multilayered Cu/TaN/Si specimen which was annealed at Ar gas. The adhesion property of Cu 171ms was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than those of sputtered Cu film and evaporated Cu film.

• Korean Journal of Materials Research
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• v.6 no.1
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• pp.116-123
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• 1996

CVD와 무전해 도금법을 이용하여 TiN 기판상에 구리막을 성장시켰고 그 각각에 대해 증착조건에 따른 성장막의 morphology, 성장기구 및 비저항, 막의 치밀성 등의 물리적 특성을 조사하였다. CVD 증착막의 결정립 크기와 입간의 기공은 막두께에 비례하여 커지는 경향을 나타내었으며 비저항은 4.7$\mu$$\Omega$cm로 구리의 체적비저항값과 거의 비슷한 것으로 나타났다. 무전해 도금막은 초기에는 layer-by-layer mode로 나중에는 is-land growth mode로 성장하는 경향을 보였다. CVD구리막의 막질은 후열처리 분위기에 따라서도 상당한 차이를 보였다. CVD구리막의 막질은 후열처리 분위기에 따라서도 상당한 차이를 보였으며, 활성화 에너지로부터 35$0^{\circ}C$를 기준으로 증착기구가 변하는 것을 확인할 수 있었던 반면, 무전해 도금은 60-8$0^{\circ}C$의 온도 구간에서 증착기구는 변하지 않았으나 도금 온도가 높을수록 막표면이 거칠어지는 경향을 나타내었다. 7:1 BHF 에칭 실험의 결과 무전해도금에 의한 구리막에 비해 CVD구리막의 에칭속도가 더 빨랐으며 막질도 덜 치밀한 것으로 나타났다.

• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.384-390
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• 2007

In this study, electroless plating of copper was performed on PET film by using the blend of supercritical $CO_2$ and plating solution. The optimum volumetric ratio of supercritical fluid and plating solution was found to be 1:9 and dispersion property was poor at $CO_2$ vol% langer than 10%. Electroless plating of copper was best at $25^{\circ}C$ and 15 MPa. Role of added supercritical $CO_2$ is not to increase solubility but to disperse and maintain Cu-particles as the 1st particles.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.37-37
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• 2013

무전해도금법 (electroless plating)은 Brenner와 Riddell이 1946년에 처음으로 환원제를 이용한 금속의 침적을 electroless plating이라고 명명한 뒤 전기를 이용하지 않고 금속막을 얻을 수 있는 방법으로 인지되어왔다. 초기에는 용액이 불안정하였으나 용액의 안정성을 향상시키면서 꾸준히 산업체에 쓰여왔다. 무전해도금의 응용이 처음에는 니켈에 국한되었으나 구리의 무전해도금이 PCB에 사용되면서 80년대부터 전자산업에서 많이 쓰이게 되었다. 최근에는 무전해도금을 이용한 전자산업뿐만 아니라 MEMS와 같이 전기도금을 위한 전기접촉이 어려우면서 정밀한 균일도를 요구하는 분야에도 많이 쓰이고 있다. 본 발표에서는 무전해도금법의 일반적인 원리와 이를 이용한 IT 산업에서의 응용에 대하여 알아본다.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.633-637
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• 2007

Electroless plating of Co-alloy thin films as capping layers for Cu interconnection has been investigated using alkali-free precursors such as $(NH_4)_2Co(SO_4)_2{\cdot}6H_2O$, $(NH_4)_2WO_4$, $(NH_4)H_2PO_4$, etc. The characteristics of the Co-alloy thin films were discussed by analyses of the effects of pH, Co-precursor concentration, and deposition temperature on the thickness and surface morphology of the films. The thickness of the Co-alloy thin films increased with increasing pH, Co-precursor concentration, and deposition temperature, similarly to the results of electroless plating of Co-alloy thin films using alkali-containing chemicals. The SEM images of the surface of the Co-alloy thin films showed that the proper ranges of pH and deposition temperature were 8.5~9.5 and $75{\sim}85^{\circ}C$, respectively. This work found a feasibility that Co-alloy thin films as capping layers for Cu interconnection could be electroless plated using alkali-free chemicals.

• Polymer(Korea)
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• v.25 no.2
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• pp.302-310
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• 2001

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless Cu plated layer and polyester (PET) film, the effect of pretreatment conditions such as etching method and mixed catalyst composition, and accelerator was investigated. Compared to NaOH etching medium, PET film was more finely etched by HCl solution, resulting in an improvement in adhesion between Cu layer and PET film. However, there were no significant differences in electromagnetic interference shielding effectiveness as a function of etching medium. The surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$ : SnCl$_2$ from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, the adhesion and the shielding effectiveness of Cu plated PET film were increased. Furthermore, HCl was turned out to be a better accelerator than NaOH in order to enhance the activity of the mixed PdCl$_2$/SnCl$_2$ catalyst, which facilitated the formation of more uniform copper deposit on the PET film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.29.2-29.2
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• 2007

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.923-928
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• 2001

An electrolytic silver plating process has been successfully developed for terminated electrode parts of dielectric ceramic resonator. High adhesion strength and high Qu is obtained and blister occurance is minimized under plating condition with $HNO_3$750 $m\ell/\ell$ and HF $ 250m\ell/\ell$ solution at $25^{\circ}C$ for 20 minutes. Adhesion strength has the highest value, 3.2 kg/mm$^2$ at etching temperature of $25^{\circ}C$. Adhesion strength, Qu and blister occurance are monotonically increased with the thickness of electrodeposition layer. In case of electrodeposition of Ag, Qu value of 380 has obtained higher than in case of electrolytic Cu plating with Qu value of 325. Therefore, terminated electrode parts of dielectric ceramic resonator reducing dielectric loss can be obtained using prensent process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.9
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• pp.4015-4021
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• 2011

The purpose of this study is to investigate the effect of compositional ratio of additives, such as potassium ferrocyanide, aminoacetic acid (=glycine) and 2,2'-dipyridyl, on the physical properties of copper layer deposited by environment-friendly electroless plating reaction. The highest plating rate of copper layer, $9.5mg{\cdot}cm^{-2}{\cdot}hr^{-1}$, was obtained at 20 mg/L of potassium ferrocyanide and 0.01 mol/L of aminoacetic acid, which coincided with the change in the hardness of the copper layer. In the additives used in this study, potassium ferrocyanide was considered to improve the plating rate, aminoacetic acid increased the hardness value of deposited films and 2,2'-dipyridyl enhanced the brightness of copper deposited films.