• Title/Summary/Keyword: 막저항

Search Result 853, Processing Time 0.028 seconds

The Fabrication of $n^+-p^+$ InP Solar Cells by the Diffusion of Sulphur (S확산에 의한 $n^+-p^+$ InP 태양전지의 제작)

  • Jung, Ki-Ung;Kim, Seon-Tai;Moon, Dong-Chan
    • Solar Energy
    • /
    • v.10 no.3
    • /
    • pp.60-65
    • /
    • 1990
  • [ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

  • PDF

Ultrastructural Changes on the Synovial Membrane of Rat Temporomandibular Joint under Mild Restraint and Cold Stresses (한냉, 중등도의 구속 스트레스시 웅성백서의 측두하악관절 윤활막의 미세구조 변화에 대한 전자현미경적 연구)

  • Ryu, Jung-Kyun;Mun, Kyung-Hwan;Chun, Yang-Hyun;Hong, Jung-Pyo
    • Journal of Oral Medicine and Pain
    • /
    • v.26 no.3
    • /
    • pp.205-214
    • /
    • 2001
  • 오늘날 스트레스라는 단어는 모든 현대인과 방송, 언론매체에서도 매일 거론되어질 정도로그 중요성이 대두되고 있다. 의학계에서도 스트레스를 단순한 심리적 문제로 국한시키지 않고 과도한 스트레스가 지속될 경우 신경계와 내분비계, 면역계의 변화를 초래해 인체의 항상성에 영향을 미쳐 질병을 일으킨다는 것을 인식하고 있으며 이에 대한 연구가 진행되고 있다. 이러한 질병의 발생과정에서 생체의 일부조직이 파괴됨으로써 기능과 형태변화가 초래될 때 apoptosis가 관여하고 있으며 이에 본 저자는 스트레스와 구강악안면영역에서 발생할 수 있는 질병과의 상관관계를 규명하기 위해 이종의 한냉 스트레스와 다소의 굴신을 허용한 중등도의 구속 스트레스를 부여한 후 측두하악관절 활막의 변화를 전자현미경관찰을 통해 밝혀내고자 한다. Sprague-Dawley계 웅성 백서(200-230 g/bw) 33마리를 구속스트레스부여군 (12마리), 한냉스트레스부여군 (12마리) 및 정상군 (3마리)으로 나누고 이들을 각각 구속장치에 구속한 후 1, 3, 5, 7일에 각각 희생시켰으며 측두하악관절 활막의 변화를 전자현미경으로 관찰하였다. 그 결과는 다음과 같다. 1. 중등도의 구속스트레스군에서 사립체는 부분적으로 농축된 소견을 보였으며 수와 크기에 있어 시간이 지남에 따라 점차 감소하는 소견을 보였다. 2. 중등도의 구속스트레스군에서 과립내형질망은 점점 확장되었으며 불규칙한 형태를 나타내었다. 3. 중등도의 구속스트레스군에서 물결모양의 핵막의 이중구조가 7일군에서 관찰되었다. 4. 한냉 스트레스군에서 사립체는 1일, 3일군에서 약간 부푼 형태를 가지고 그 수가 다소 감소되었으나 시간이 지남에 따라 5일, 7일군에서 건강한 모양으로 점차 증가되었다. 5. 한냉 스트레스군에서 과립내형질망은 1일, 3일군에서 불규칙하게 확장된 소견을 보였으나 5일, 7일군에서는 잘 발달된 형태로 핵 주위에서 다수 관찰되었다. 6. 한냉 스트레스군에서 핵은 전 기간에 걸쳐 큰 변화를 보이지 않았다. 이와 같은 결과를 토대로 측두하악관절 활막조직은 한냉 스트레스 및 중등도의 구속 스트레스에 대하여 중등도의 저항성을 가지고 있는 것으로 생각되며 생리적 적응한계를 넘는 과도하고 지속적인 스트레스에 의하여 활막조직이 apoptosis되어 측두하악관절에 병리적 변화를 초래할 가능성이 있다고 사료되어 이후 지속적인 연구가 요구된다.

  • PDF

Morphology Controlled Cathode Catalyst Layer with AAO Template in Polymer Electrolyte Membrane Fuel Cells (AAO를 사용한 고분자전해질 연료전지의 공기극 촉매층 구조 제어)

  • Cho, Yoon-Hwan;Cho, Yong-Hun;Jung, Nam-Gee;Ahn, Min-Jeh;Kang, Yun-Sik;Chung, Dong-Young;Lim, Ju-Wan;Sung, Yung-Eun
    • Journal of the Korean Electrochemical Society
    • /
    • v.15 no.2
    • /
    • pp.109-114
    • /
    • 2012
  • The cathode catalyst layer in polymer electrolyte membrane fuel cells (PEMFCs) was fabricated with anodic aluminum oxide (AAO) template and its structure was characterized with scanning electron microscopy (SEM) and Brunauer-Emmett-Teller (BET) analysis. The SEM analysis showed that the catalyst layer was fabricated the Pt nanowire with uniform shape and size. The BET analysis showed that the volume of pores in range of 20-100 nm was enhanced by AAO template. The electrochemical properties with the membrane electrode assembly (MEA) were evaluated by current-voltage polarization measurements and electrochemical impedance spectroscopy. The results showed that the MEA with AAO template reduced the mass transfer resistance and improved the cell performance by approximately 25% through controlling the structure of catalyst layer.

The Structural and Electrical Properties of Li doped ZnO Thin Films (Li이 도핑된 ZnO 박막의 구조적 및 전기적 특성)

  • You, Gyeon-Gue;Kwon, Dae-Hyuk;Jun, Choon-Bae;Kim, Jeong-Gyoo;Park, Ki-Cheol
    • Journal of Sensor Science and Technology
    • /
    • v.9 no.2
    • /
    • pp.146-152
    • /
    • 2000
  • Lithium doped zinc oxide(ZnO:Li) films are prepared by rf magnetron sputtering on Corning 7059 glass substrate using specifically designed ZnO targets containing different amount of $Li_2CO_3$ powder as the Li doping source. The structural properties of the Li doped ZnO films are investigated by XRD, SEM and AFM. The electrical properties of the ZnO:Li films are measured for various deposition conditions, such as the substrate temperature, $O_2$/Ar gas ratio and rf power. The effects of the $Li_2CO_3$ content in target and the deposition conditions on the structural and electrical properties were studied. When ZnO:Li films were sputtered at the substrate temperature of $200^{\circ}C$, $O_2$/Ar gas ratio of 100% and rf power of 100W with a target containing less than 1wt% content of $Li_2CO_3$, showed good surface morphology, strong c-axis orientation and high resistivity of more than $10^8{\Omega}cm$.

  • PDF

Ohmic Contact of Ti/Au Metals on n-type ZnO Thin Film (Ti/Au 금속과 n-type ZnO 박막의 Ohmic 접합 연구)

  • Lee, Kyoung-Su;Suh, Joo-Young;Song, Hoo-Young;Kim, Eun-Kyu
    • Journal of the Korean Vacuum Society
    • /
    • v.20 no.5
    • /
    • pp.339-344
    • /
    • 2011
  • The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.

Electrical and Optical Properties of the GZO Transparent Conducting Layer Prepared by Magnetron Sputtering Technique (마그네트론 스퍼터링법으로 제작된 GZO 투명전도막의 전기적 및 광학적 특성)

  • No, Im-Jun;Kim, Sung-Hyun;Shin, Paik-Kyun;Lee, Kyung-Il;Kim, Sun-Min;Cho, Jin-Woo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.24 no.4
    • /
    • pp.110-115
    • /
    • 2010
  • Transparent conducting gallium-doped zinc oxide (GZO) thin films which were deposited on Corning glass substrate using an Gun-type rf magnetron sputtering deposition technology. The GZO thin films were fabricated with an GZO ceramic target (Zn : 97[wt%], $Ga_2O_3$ : 3[wt%]). The GZO thin films were deposited by varying the growth conditions such as the substrate temperature, oxygen pressure. Among the GZO thin films fabricated in this study, the one formed at conditions of the substrate temperature of 200[$^{\circ}C$], Ar flow rate of 50[sccm], $O_2$ flow rate of 5[sccm], rf power of 80[W] and working pressure of 5[mtorr] showed the best properties of an electrical resistivity of $2.536{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $7.746{\times}10^{20}[cm^{-3}]$, and a carrier mobility of 31.77[$cm^2/V{\cdot}S$], which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

The Optimization of Removal Process of Humic Acid by Polysulfone Hollow-fiber Membrane (폴리설폰 중공사막에 의한 부식산 제거공정의 최적화)

  • Song, Kun-Ho;Lee, Kwang-Rae;Lee, Chan-Ki
    • Journal of Korean Society of Environmental Engineers
    • /
    • v.22 no.7
    • /
    • pp.1273-1284
    • /
    • 2000
  • In this study, ultrafiltration was performed to remove humic acid from aqueous solution. Since the effects of system variables on the ultrafiltration were tangled with non-linearly. Response Surface Methodology(RSM) was used to know optimum conditions of ultrafiltration process, relations among system variables, and the effects of system variables such as pressure difference across the membrane, concentration of humic acid, and feed flow rates. As concentrations of humic acid were 10ppm, 40ppm, and 70ppm in feed stream, permeation fluxes were 2.56, 2.27, and $2.10({\times}10^{-2}cc/cm^2{\cdot}min)$ respectively ; in other words, permeation fluxes of 10ppm, 40ppm and 70ppm feed concentration decreased by 17.7%, 26.7% and 32.2% of pure water permeation flux respectively. Concentration of humic acid in permeate side were 0.5ppm, 1.2 ppm, and 2.1ppm respectively. When pressure difference(${\Delta}P$) increased from 1atm to 2atm and 3atm, permeation fluxes of 40ppm feed concentration increased by 66% and 152% of permeation rate at 1atm respectively. However, concentrations of humic acid in permeate side increased from 0.5ppm to 1.5ppm and 3.5ppm. RSM showed that the optimum condition of system variables is 38.5~40ppm of humic acid concentration in feed stream, 30~30.7cc/min of feed flow rate, and 2atm of pressure difference.

  • PDF

Effect of Stuffing of TiN on the Diffusion Barrier Property (II) : Cu/TiN/Si Structure (TiN의 충진처리가 확산방지막 특성에 미치는 영향(II) : Cu/TiN/Si 구조)

  • Park, Gi-Cheol;Kim, Gi-Beom
    • Korean Journal of Materials Research
    • /
    • v.5 no.2
    • /
    • pp.169-177
    • /
    • 1995
  • The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

  • PDF

Study of the Effect of Hydrazine Form and Titanium Electrode Condition on Reduction of Uranium(VI) n Nitric Acid (질산중의 우라늄(VI) 환원에 대한 하이드라이진 형태와 티타늄 전극상태의 영향연구)

  • Kim, K.W.;Lee, E.H.;Y.J. Shin;J.H. Yoo;Park, H.S.;Kim, Jong-Duk
    • Nuclear Engineering and Technology
    • /
    • v.26 no.3
    • /
    • pp.425-432
    • /
    • 1994
  • Voltammogram analysis of U(VI) reduction at electrochemically non-pretreated/pretreated Ti electrodes in nitric acid and hydrazine($N_2$H$_4$)/protonated hydrazine($N_2$H$_{5}$$^{+}$) media was done in order to determine the effect of hydrazine form and Ti electrode condition on the reduction of U(VI) in nitric acid. In the case of non-pretreated Ti electrode, the reduction in nitric acid and hydrazine mono-hydrate solution needed a high activation overpotential and was affected by the ratio of hydrazine to nitric acid rather than by only absolute amount of hydrazine because of the decrease of solution conductivity and increase of iR drop, which were caused by proton consumption in the solution by the hydrazine. In the case of pretreated Ti electrode in nitric acid and protonated hydrazine solution, the reduction current peaks of U(VI) were clearer and higher enough to perform a kinetic analysis, compared with the case with the non-pretreated Ti electrode at the same potential, and the behavior was strongly affected by nitric acid. The presence of hydrazine was important in the reduction of U(VI) at the pretreated Ti electrode for preventing the reoxidation of U(IV), but the concentration of protonated hydrazine was not.t.

  • PDF

Studies on Economic Damage of Korean Rice Pests (벼해충의 경제적 피해에 관한 연구)

  • Catling H. D.;Lee S. C.
    • Korean journal of applied entomology
    • /
    • v.16 no.2 s.31
    • /
    • pp.79-86
    • /
    • 1977
  • Four experiments were carried out under farmer's field conditions to determine economic threshold levels of major rice pests aad attempt a reduction in the number of insecticide applications. In the experiments were included check treatments, insecticide schedules representing the official recommendations to farmers, and several corrective treatments. A careful record was kept of insect pest densities and disease incidence. i) In the north at Suweon and Icheon where Chilo suppresalis. (Walk.), the striped rice borer, was active in the first generation, no significant yield differences were obtained between plots receiving several insecticide applications and those left totally unprotected. The mean yields were high (5.2-7.6t/ha). ii) First generation borer activity rising to $8.6\%$ injured tillers was below the economic threshold since no yield reduction was recorded in either japonica varieties or the high-yielding Tongil variety. iii) Evidence was obtained thst berer damage was made good by replacement of infested tillers (compensatory growth), C. suppressalis populations were always low in the second generation. iv) The experimental results obtained at Suweon and Icheon do not justify the present official recommendations of 6-7 pesticide applications. v) further south at Iri a substantial yield reduction occurred due to an early outbreak of stripe disease transmitted by Laodelphax striatellus (Fallen), the small brown planthopper; a mean of 1-2 individuals/hill was recorded immediately after transplanting. C. suppressalis probably contributed to this yield reduction. vi) Several applications against the vector failed to prevent the rapid spread of stripe to the susceptible variety in the Iri experiment: in surrounding fields the resistant Tonsil varivety was ralatively unaffected. vii) Pests of lesser importance were Nephotettix cinctieps (Uhler), Nilaparvata lugens (Stil), Sogatella furcifera (Horv..), and leaf miners.

  • PDF