• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.189-195
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• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.513-516
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• 2017

When stored for long periods in a powder-based device (PMD), the explosive power in the device is aged and the explosive power is changed. Thus, The gunpowder used in the PMD must be chemically and physically stable for both internal and external factors. Since $BKNO_3$ and THPP are used as representative gunpowder, thermodynamic and kinetic analyzes were performed based on these gunpowders. Differential scanning calorimeter (DSC) was used to analyze the calorific value and reaction rate. As a result, there was no significant change in caloric value and reaction rate in THPP. In addition, XPS and TEM-EDS analyzes were performed to confirm the formation of oxide films directly related to aging, and no oxide films were observed as a result of thermal analysis. In addition, XPS and TEM-EDS analyzes were performed to confirm the formation of oxide films directly related to aging. As a results, no oxide films were observed. It can be concluded that THPP is the most famous gunpowder in terms of long-term stability.

• Membrane Journal
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• v.1 no.1
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• pp.44-54
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• 1991

Sulfonated polystyrene-divinylbenzene(PS-DVB) copolymer membranes were prepared using different diluents (toluene, cyclohexane, cyclohexanol), various diluent ratio and DVB contents. And initial fluxes of organic acids were investigated by varying pH and initial concentration. As a results, water content and ion-exchange capacity decreased with increasing DVB concetration. Among used diluents, cyclohexanol was the most efficient for building up the highest water content and ion-exchange capacity. In the experiment of permeation, carboxylic acid such as formic acid and acetic acid showed higher fluxes when pH was lower than pKa and amino add such as L-alanine showed minimum flux when pH was isoelectric value. The relationaship between initial fluxes and initial concentrations has been expressed by saturation kinetics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.486-486
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• 2014

CIGS 박막태양 전지는 I-III-VI2 Chalcopyrite 결정구조를 가진 화합물 반도체 태양전지로 인위적인 밴드갭 조작이 용이하여 효율 향상에 높은 가능성을 보이고 있다. 4원소 화합물인 CIGS 광흡수층의 대표적인 제조 방법으로는 co-evaporation 공정법이 있다. 동시 증발법은 CIGS 결정을 최적화하기 위하여 박막이 증착되는 동안 기판의 온도를 3단계로 변화시켜주는 3-stage 공정을 통하여 제작된다. 일반적으로 CIGS 박막태양전지는 전면전극으로 투명전도막이 사용되며 높은 광투과성과 전기전도성을 가져야 한다. 투명전도막의 광학적, 전기적 특성은 CIGS 박막태양전지의 효율에 영향을 미치기 때문에 최적화된 조건이 요구된다. 본 연구에서는 CIGS 광흡수층은 Ga/(In+Ga)=0.31, Cu/(In+Ga)=0.86으로 최적화 시켰으며, 투명전도막은 Al이 도핑된 ZnO 박막을 RF 마그네트론 스퍼터링법을 이용하여 증착하였다. ZnO:Al 박막의 두께를 가변하여 증착하였으며 박막의 특성을 평가하고, CIGS 광흡수층에 이를 적용함으로써 태양전지 변환효율 특성을 연구하였다. CIGS 박막 태양전지의 투명전극인 ZnO:Al 박막의 두께가 500 nm 일 때, Jsc=29.521 mA/cm2, Voc=564 mV, FF factor=71.116%, Efficiency=12.375%의 광 변환효율을 얻을 수 있었으며, 이에 따른 투명 전도막의 전기적, 광학적 특성을 통해 CIGS 박막태양전지에 미치는 영향에 대해 조사하였다.

• Clinical and Experimental Pediatrics
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• v.45 no.4
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• pp.466-472
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• 2002

Purpose : The diagnosis of Meckel's diverticulum is difficult and delayed because it presents with various clinical symptoms. We evaluated clinical, imaging and pathologic findings of Meckel's diverticulum to facilitate detection of Meckel's diverticulum in children. Methods : Review of clinical, imaging, surgical and pathological findings in 10 children aged 7 days to 14 years with Meckel's diverticulum during an 8-year period, 1993-2001, at Ewha Womans University Hospital was undertaken. Results : The male to female ratio was 2.3 : 1. The chief complaint was painless lower gastrointestinal( GI) bleeding; others were abdominal pain, abdominal distention and vomiting, in order of frequency. The diagonsis before surgery were Meckel's diverticulum in 5 patients, non-reducible intussusception in 3 patients and intestinal obstruction in 2 patients. The diverticulum was located between 35 cm to 70 cm proximal to the ileocecal valve. The length of the diverticulum ranged from 4 cm to 12 cm and 80% of it was within 5 cm. A Meckel scan($^{99m}Tc-pertechnetate$ scintigraphy) after cimetidine administration was done in 6 cases. All 5 cases that presented with lower GI bleeding had ectopic gastric mucosa confirmed on pathology. Out of 5 cases of ectopic gastric mucosa, only 4 cases were positive on the Meckel's scan. Conclusion : In cases of unexplained GI bleeding, obstruction, or inflammation diagnostic workup should be carried out to rule out Meckel's diverticulum. Laparoscopy, high resolution ultrasonography and computed tomography of the abdomen may be indicated in the assessment of pediatric patient with lower GI bleeding, especially in patients with suspected bleeding from Meckel's diverticulum showing negative Meckel's scan.

• Membrane Journal
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• v.28 no.5
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• pp.340-350
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• 2018

In the present study, crystallographically b- and c-axis oriented mordenite zeolite membranes were prepared and their pervaporative ethanol dehydration was investigated. The seed layer with a high coverage grew to be c-axis oriented dense layer, while the seed layer with a low coverage grew to be b-axis oriented layer. This phenomenon could be explained by the evolutionary selection growth mechanism. The b-axis grown membrane with 8-membered rings showed a high separation factor of above 1000 and a considerable total flux of around $0.2kg/m^2h$. The c-axis grown, columnar structured membrane with 8- and 12-membered rings showed a low separation factor of less than 200 and a relatively high total flux of around $0.25kg/m^2h$. The high performance of b-axis grown membrane was due to the relatively small opening of 8-membered rings. Water molecules can freely permeate through the openings, but ethanol molecules, difficultly. Therefore, in the present study, we introduced a new method to control crystallographic orientation of mordenite membrane by changing seeding amount of needle-like crystals, and elucidated that b-axis oriented mordenite membrane showed better performance than c-axis grown mordenite membrane.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.374-379
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• 1998

$Mn_1-xCr_xPt_3$ alloy films have been prepared by depositing (Mn, Cr)/Pt multilayers using a rf magnetron sputterer followed by heat treatment. Small and wide angle x-ray diffractometry, magnetic hysteresis loops and Kerr rotation angle spectra of the films have been measured and used to investigate structural, magnetic and magneto-optic properties of the films. The films had a crystal structure of ordered AuCu$_3$ type and the strong preferred orientation of a (111)plane parallel to the film surface. The saturation magnetization of the films was decreased with Cr content reaching almost zero near x=0.58 and then increased for further increasement of Cr content up to x=0.77 over that stayed almost constant. This indicated that Cr atoms were antiferromagnetically coupled with Mn atoms. The magnetic easy axis of MnPt$_3$(x=0) film was parallel to the film surface but those of the films with x$\geq$0.58 increased as Cr content increased reaching about 4 kOe at x=1(CrPt$_3$). The dependence of the Kerr rotation angle on the Cr content was similar to that of the saturation magnetization on the Cr content. The films with x=0.77 and x=1 showed the larger Kerr rotation angle at the wavelengths of near infrared compared to the magneto-optic recording medium, TbFeCo, currently being used.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.1-7
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• 2008

We studied a growth behavior of Intermetallic compounds(IMCs) during solder bumping with two reflow methods. Ti(50 nm), Cu($1{\mu}m$), Au(50 nm) and Ti(50 nm) thin films were deposited on $SiO_2$/Si wafer using the DC magnetron sputtering system as the under bump metallization(UBM). And the $5{\mu}m$ thick Cu bumps and $20{\mu}m$ thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.705-705
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• 2013

CIGS 박막태양 전지는 I-III-VI Chalcopyrite 결정구조를 가진 화합물 반도체 태양전지로 인위적인 밴드갭 조작을 통하여 효율 향상에 용이하다. 4원소 화합물인 CIGS 광흡수층의 대표적인제조 방법으로는 co-evaporation 공정법이 있다. 동시 증발법은 CIGS 결정을 최적화하기 위하여 박막이 증착되는 동안 기판의 온도를 3단계로 변화시켜주는 3-stage 공정을 통하여 제작된다. 일반적으로 CIGS 박막태양전지는 전면전극으로 투명전도막이 사용되며 높은 광투과성과 전기전도성을 가져야 한다. 투명전도막의 광학적, 전기적 특성은 CIGS 박막태양전지의 효율에 영향을 미치기 때문에 최적화된 조건이 요구된다. 본 연구에서는 CIGS 광흡수층은 Ga/(In+Ga)=0.31, Cu/(In+Ga)=0.86으로 최적화 시켰으며, 투명전도막은 Ga이 도핑된 ZnO박막을 RF 마그네트론 스퍼터링법을 이용하여 증착하였다. CIGS 박막 태양전지 직렬저항 성분인 투명 전도막의 비저항이 $4.46{\times}{\square}10{\square}-3{\square}$(${\Omega}$-cm)에서 $9.3{\times}{\square}0{\square}-4{\square}$(${\Omega}$-cm) 으로 변화함에 따라 Efficiency가 9.67%에서 16.47%으로 증가하였으며, Voc가 508 mV에서 596 mV으로, Jsc가 29.27 mA/$cm^2$에서 37.84 mA/$cm^2$으로, FF factor가 64.99%에서 72.96%로 증가하였다. 이에 따른 투명 전도막의 전기적, 광학적 특성을 통해 CIGS 박막태양전지에 미치는 영향에 대해 조사하였다.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.75-80
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• 2012

$InSb$ films were fabricated by DC magnetron sputtering and the effects of deposition temperature, heat treatment, passivation from evaporation and multi-layered structure were investigated. Electron mobility and electron concentration were linearly increased with deposition temperature for as-deposited specimens. It was found that the mobilities depend on the grain size rather than the stoichiometry for the samples with very low mobilities. The mobilities largely increased for the specimens with evaporation passivation compared with those without passivation layer. The mobility also increased with the amount of indium deposition in the multi-layer structured $InSb$ films. It was found that the mobility increments in both cases are due to the matching of the stoichiometry in $InSb$ films. For the heat treated and passivated specimens, the mobilities increased with annealing time and the maximum mobility was measured as 1612 $cm^2$/Vs.