• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.277-285
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• 1992

플라즈마 화학기상증착법과 저압 화학기상증착법을 사용하여 실리콘 기판 위에 텅 스텐 박막을 증착하였다. 반응기체로 WF6를 사용하였으며 환원기체로는 SiH4를 사용하였다. 플라즈마 증착법에 의한 텅스텐 박막의 성장은 환원기체의 유무에 상관없이 주로 기상 반응 에 의한 텅스텐 덩어리들의 증착에 의하여 이루어졌으며 비교적 균일도가 낮은 박막표면을 이루었다. 저압 화학증착법의 경우 환원기체를 사용하지 않았을 때에는 실리콘 기판에 의한 제한된 환원반응에 의해 텅스텐이 증착되었으나, 환원기체를 사용했을 때에는 초기의 실리 콘 기판에 의한 환원반응과 이어 일어나는 SiH4 기체와의 불균일계 환원반응의 두 단계반응 에 의하여 텅스텐 박막 증착이 이루어졌다. 저압 화학증착법의 경우 텅스텐 박막의 특성은 플라즈마 증착법에서 보다 우수하였으며 박막 성장은 island by island 양식을 따르는 것으 로 추정되었다. 박막은 $\alpha$-W의 체심입방 구조로 이루어졌으며 박막이 성장함에 따라 단결정 구조가 증가하였다.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.470-475
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• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.168-168
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• 2016

BDD(Boron Doped Diamond) 전극은 전위창이 넓고, 다른 불용성 전극에 비해 산소발생과전압이 높아 물을 전기화학적인 방법으로 처리하는 영역에 있어 매우 효과적일 뿐만 아니라, 전통적인 불용성 전극에 비해 전극 표면에서 수산화 라디칼(-OH)과 오존(O3)의 발생량이 월등히 높아 수처리용 전극으로서의 유용성이 매우 높다. 따라서 BDD 전극을 수처리용 전극에 사용하는 경우 수산화 라디칼(-OH)과 오존(O3), 과산화수소(H2O2) 등과 같은 산화제의 생성은 물론이고, 염소(Cl2)가 포함되어 있는 전해액에서는 차아염소산(HOCl)이나 차아염소산이온(OCl-)과 같은 강력한 산화제가 발생되어 전기화학적 폐수처리, 전기화학적 정수처리, 선박평형수 처리 등의 분야에 널리 활용될 수 있다. 본 연구에서는 상온 및 상압에서 운전이 가능하고 난분해성 오염물질 제거 효과가 뛰어난 전기화학적 고도산화공정(Electrochemical Advanced Oxidation Process, EAOP)에 적합한 대면적의 BDD 전극을 개발하고 자 하였다. 이러한 BDD 전극의 성막 방법으로는 필라멘트 가열 CVD, 마이크로파 플라즈마 CVD, DC 플라즈마 CVD 등이 널리 알려져 있는데 최근에는 설비의 투자비가 비교적 저렴하고, 대면적의 기판처리가 용의한 필라멘트 가열 화학기상증착법(Hot Filament Chemical Vapor Deposition, HFCVD)이 상업적으로 각광을 받고 있다. 따라서 본 연구에서는 HFCVD 방법을 이용하여 반응 가스의 투입비율, BDD 박막의 두께, 기판의 재질 등에 따른 여러 가지 성막 조건들을 검토하여 $100{\times}100mm$ 이상의 대면적 BDD 전극을 개발하였다. Fig. 1은 본 연구를 통하여 얻어진 BDD 전극의 표면 및 단면 SEM이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.270-276
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• 1996

As methane concentration was varied, the textures of diamond films deposited on Si(100)substrate were observed by XRD,SEM and Raman spectroscope. As a result, $O_{2}$ plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100)substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110)surface and the high quality diamond film with FWHM of Raman spectra being 3.8 $cm^{-1}$ / has been grown. As time goes by deposition time, the preferred orientation increases

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.990-997
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• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.