• Journal of the KSME
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• v.50 no.6
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• pp.43-47
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• 2010

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.829-834
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• 2011

Exposure process is the most important technology to fabricate highly integrated circuit. Up to now, mask type lithography process has been generally used. However, it is not efficient for small quantity and/or frequently changing products. Therefore, maskless lithography technology is raised in exposure process. In this study, relations between multi-beam energy and overlay were analyzed. Exposure experiment of generating pattern was performed. It was from presented scan line by multi- beam simulation. As a result, optimal scan line distance was proposed by simulation, and micro pattern accuracy could be improved by exposure experiment using laser direct imaging system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.268-271
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• 2005

Etch resistance of mask layer on silicon substrate modified by AFM-based Tribo-Nanolithography (TNL) in Aqueous Solution in an aqueous solution was demonstrated. n consists or sequential processes, nano-scratching and wet chemical etching. The simple scratching can form a mask layer on the silicon substrate, which acting as an etching mask. For TNL, a specially designed cantilever with diamond tip, allowing the formation of mask layer on silicon substrate easily by a simple scratching process, has been applied instead of conventional silicon cantilever fur scanning. This study demonstrates how the TNL parameters can affect the etch resistance of mask layer, hence introducing a new process of AFM-based maskless nanolithography in aqueous solution.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.1
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.6
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• pp.834-840
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• 2010

Photo lithography process is very important technology to fabricate highly integrated micro patterns with high precision for semiconductor and display industries. Up to now, mask type lithography process has been generally used for this purpose; however, it is not efficient for small quantity and/or frequently changing products. Therefore, in order to obtain higher productivity and lower manufacturing cost, the mask type lithography process should be replaced. In this study, a maskless lithography system using the DMD(Digital Micromirror Device) is developed, and the exposure condition and optical properties are analyzed and simulated for a single beam case. From the proposed experimental conditions, required exposure experiments were preformed, and the results were investigated. As a results, 10${\mu}m$ spots can be generated at optimal focal length.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.33-39
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• 2009

A microlens array (MLA) was developed based on the wet-etched quartz substrate and coating of UV adhesive on the substrate for maskless lithography application. The developed MLA has the focal length of ${\sim}45\;{\mu}m$ and the spot size of ${\sim}1\;{\mu}m$. The spot size of the focused beam passing through the MLA was detected by CCD camera, and its intensity was monitored by beam profiler. Uniform spots with nearly identical intensities were observed on the focal plane when a beam passes through the fabricated MLA. The focal length was varied depending on thickness of the coated UV adhesive. The thicker the thickness of the UV adhesive was, the shorter the focal length of the MLA was. With a general mask aligner, UV beam focusing was tested onto photoresist (PR). The beams were well focused onto PR when UV passes through the MLA. Depending on the variable distances from the MLA, beam sizes onto PR were controlled. Even at high temperature for a long time, the performances of the MLA were not changed.