• 한국레이저가공학회지
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• 제3권3호
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• pp.39-45
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• 2000

The volume and depth of the craters produced on silicon samples during high power laser ablation show a strong nonlinear change as the laser irradiance increases across a threshold value, approximately 2.2$\times$10$\^$10/ W/㎠. Time-resolved shadowgraph images of the ablation plume reveal the ejection of large particulates from the sample for laser irradiance above the threshold, with a time delay of about 300-400 ㎱. The numerically estimated thickness of the superheated liquid layer, considering the transformation of liquid metal into liquid dielectric near the critical state, agrees with the measured agrees with crater depths. It is suggested that a phase explosion of the deep superheated liquid layer near the critical state is responsible for the measured sudden increase of crater volume and the ejection of large particulates.

• 한국레이저가공학회지
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• 제6권3호
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• pp.37-45
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• 2003

Pulsed laser ablation is important in a variety of engineering applications involving precise removal of materials in laser micromachining and laser treatment of bio-materials. Particularly, detailed numerical simulation of complex laser ablation phenomena in air, taking the interaction between ablation plume and air into account, is required for many practical applications. In this paper, high-power pulsed laser ablation under atmospheric pressure is studied with emphasis on the vaporization model, especially recondensation ratio over the Knudsen layer. Furthermore, parametric studies are carried out to analyze the effect of laser fluence and background pressure on surface ablation and the dynamics of ablation plume. In the numerical calculation, the temperature, pressure, density, and vaporization flux on a solid substrate are obtained by a heat-transfer computation code based on the enthalpy method. The plume dynamics is calculated considering the effect of mass diffusion into the ambient air and plasma shielding. To verify the computation results, experiments for measuring the propagation of a laser induced shock wave are conducted as well.

• 한국레이저가공학회지
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• 제10권2호
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• pp.17-24
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• 2007

We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

• 한국추진공학회지
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• 제12권3호
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• pp.1-8
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• 2008

본 연구에서는 고출력 레이저에 의한 고에너지 물질의 점화 현상 모델을 제시하였다. 본 모델에서는 강판에 긴 조사 시간을 가진 펄스 레이저를 조사하여 발생한 어블레이션에 의한 열 확산을 고려하였고, 수 kW의 continuous 레이저를 폭약에 조사하여 폭약이 열에 의하여 점화하는 현상을 실험 결과와 비교를 통해 검증하였다. 여기서는 매우 짧은 조사 시간(femto- 혹은 pico-second)을 가진 펄스 레이저에서 나타나는 전자에 의한 효과는 무시 되었다. 본 연구에 사용된 폭약은 RDX, TATB 그리고 HMX이며, 제시한 모델은 실험 결과와 흡사한 결과를 도출하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 추계학술대회 논문집
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• pp.385-386
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• 2006

• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 2003년도 추계학술대회 논문집
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• pp.199-199
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• 2003

During the cleanup of US Department of energy facilities, contaminated materials, toxic and hazardous radionuclides (e.g., Th, Cs, and U) and heavy metals (e.g., Cr, Hg, Pb, and Ni)-laden ultrafine particles are generated. The size of the particles is up to about 200 nm. Understanding of the production of these nanometer size particles is critical in determining the surface cleaning efficiently. (omitted)

• 한국기계가공학회지
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• 제14권6호
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• pp.104-110
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• 2015

LED has added value as a lighting source in the illuminating industry because of its high efficiency and low power consumption. In LED production processes, the chip cutting process, which mainly uses a scribing process with a laser has an effect on quality and productivity of LED. This scribing process causes problems like heat deformation, decreasing strength. The inner laser method, which makes a void in wafer and induces self-cracking, can overcome these problems. In this paper, cutting sapphire wafer for fabricating LED chip using the inner laser scribing process is proposed and evaluated. The aim is to settle basic experiment conditions, determine parameters of cutting, and analyze the characteristics of cutting by means of experimentation.

• 한국레이저가공학회지
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• 제18권4호
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• pp.17-22
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• 2015

In this paper, ablation rate of $Al_2O_3$ ceramics by femtosecond laser fluence is derived with experimental method. The automatic three axis linear stage makes laser optics to move with high spatial resolution. With 10 times objective lens, minimal pattern width of $Al_2O_3$ is measured in the focal plane. Ablated surface area is shown as linear tendency increasing number of machining times with various laser power conditions. Machining times is most sensitive condition to control $Al_2O_3$ pattern width. Also, the linear increment of pattern width with laser power change is investigated. In high machining speed, the ablation volume rate is more linear with fluence because pulse overlap is minimized in this condition. Thermal effect to surrounding medium can be minimized and clean laser process without melting zone is possible in high machining speed. Ablation volume rate decelerates as increasing machining times and multiple machining times should be considered to achieve proper ablation width and depth.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.543-546
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• 2000

본 논문에서는, 모의 진공차단기 내에서의 구리 증기입자의 공간적 및 시간적 밀도분포를 레이저유기형광법 (LIF)에 의해 계측하였다. 레이저 트리거 방전에 의해 생성된 어블레이션(ablation) 플라즈마에서의 구리입자를 324.75nm의 Nd:YAG 레이저를 이용하여 여기시키고, 이때 여기준위에서 기저준위로 천이할 때의 형광신호(510.55nm)를 분광기 및 광전자증배관을 이용하여 계측하였다. 음극점으로부터 넓은 각도를 가지고 전자가 튀어나오며, 넓은 범위에 걸쳐 전자나 이온이 존재하는 것을 알 수 있었다. 또한 음극으로부터 8mm ( x=0, y=8mm 진 위치에서 가장 강한 신호와, 2mm ( x=0, y=2mm 가장 약한 신호를 얻을 수 있었다.

• 한국레이저가공학회지
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• 제14권4호
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• pp.21-27
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• 2011

In this work, we have studied on time-resolved transient reflective image of single crystalline Si surface after single-shot fs-laser irradiation with varying the laser fluence under two different laser spot sizes. The temporal profiles of transient reflectivity changes as well as its maximum values at the early delay time were found to be strongly dependent on both the laser beam spot size and laser fluence. We have interpreted the dependence of transient reflectivity changes on the laser spot size in terms of a relaxation of the generated free carriers to the bulk silicon, which should be interacted with the plasma.