• Polymer Science and Technology
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• v.15 no.2
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• pp.228-233
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• 2004

본 기고부분에서는 레이저 라만 분광법을 이용하여 나노입자에 흡착된 자기조립박막의 구조를 밝히고 응용성을 모색하는 일을 소개하고자 한다 Au 나노입자는 최근 재료과학과 의학 및 생물학에서 그 쓰임의 폭이 넓어지고 있다. 나노입자가 처음 사용된 예들 중에 가장 잘 알려진 것은 고대 로마 시대의 Lycurgus 컵에 기인한다고 한다. 컵 안에 함유된 미량의 은이나 금 나노입자에 의해서 반사했을 때와 투과할 때의 빛깔이 다르게 보이며 이러한 성질은 중세건축물의 스탠드 글라스에 이용되어 왔다. 근대적인 의미에서 Au 콜로이드의 수용액이 작은 미세입자가 분산되어 있다고 생각한 사람은 전기화학의 창시자라 할 수 있는 영국의 Faraday라 할 수 있다.(중략)

• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.182-186
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• 2008

The prism spectrometer is a standard device for the measurement of refractive index; it is used in undergraduate laboratories. Typically, however, lots of attention is required in the alignment, and the accuracy of the obtained refractive index is not so high in spite of the durability of the device. The maximum and minimum deviation method, which compensates the disadvantages of the prism spectrometer, can be composed cost effectively using a length marking tape and a rotating platform. It can measure the refractive indices accurately by utilizing a wide screen. In this study, the equal sided hollow prism whose length is 26 mm was fabricated and measured the refractive indices of seven kind of liquids (pure water, $C_3H_5(OH)_2$, $CCl_4$, $C_6H_4NH_2$, $CS_2$, $C_6H_4(CH_3)_2)$ by using the prism spectrometer and maximum and minimum deviated laser beam method at the wavelengths of He-Ne laser (${\lambda}$= 632.8 nm) and YVO4 laser (${\lambda}$= 532 nm). The result shows that the data obtained by the latter method are more accurate and precise than those obtained by the former device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.363-364
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• 2012

기존 양자점에 대한 연구는 레이저 다이오드와 광증폭기등과 같은 광소자의 활성층에 사용되던 양자우물을 대체하기 위하여 고밀도, 고균일 양자점 성장에 관한 연구가 활발히 진행되었지만, 최근에는 양자점을 이용한 Single-photon source의 관심이 높아짐에 따라 저밀도 양자점 성장에 관한 연구가 주목 받고 있다. 본 연구에서는 수직형 저압 Metal organic chemical vapor deposition (MOCVD)를 이용하여 InP 기판 위에 저밀도 InAs 양자점을 성장하였다. 저밀도의 양자점을 성장하기 위하여 양자점과 덮개 층($1.1 {\mu}m$ InGaAsP)사이에 V족 원료 가스인 As만 공급하는 성장 중단 시간 (GI:Growth interruption)을 삽입하였다. 시료의 구조는 InP (100)기판위에 50 nm InGaAsP barrier, 1.5ML GaAs를 성장 후 InAs 1.9 ML를 성장하였다. 그 후 0, 1, 2, 5 분의 GI을 삽입한 후 InGaAsP 와 InP 덮개층을 성장하였다. 양자점의 밀도와 형상을 측정하기 위하여 Atomic force microscopy (AFM)을, 광학적 특성 분석을 위하여 저온 Micro Photoluminescence (${\mu}$-PL)을 측정하였다. 성장 중단 시간의 증가에 따라 InAs/InP 양자점의 높이와 넓이는 증가하고 밀도는 감소하였다. 성장 중단 시간 3분 이후에는 밀도 감소가 둔화 되었으며, 5분일 때 $3.2{\times}10^7/cm^2$의 극저밀도 InAs/InP 양자점이 성장되었다. 또한 저밀도 양자점 시료의 저온 ${\mu}$-PL을 측정하여 단일 양자점의 exciton과 bi-exciton peak가 측정되었다.

• Journal of Korean Ophthalmic Optics Society
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• v.10 no.4
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• pp.305-312
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• 2005

In this thesis, Lohmann's algorithm and FFT (fast Fourier transform) are used to synthesize binary-phase holograms. FFT computing is carried out for the calculation of complex wavefronts of $128{\times}128$ sampling points of an object that is numerically specified. Then using the Lohmann's algorithm, the amplitude and the phase of complex wavefronts are encoded in binary holograms on each sampling points. PC (personal computer) and laser printer are used to plot binary-phase holograms and CGH (computer generated holograms) films are obtained from this plot by photographic reduction. Holographic images of numerically specified objects are reconstructed from the He-Ne laser and the inverse Fourier optics system. We estimate the quality of holographic images according to the sampling number, application of random phase, amplitude clipping and bleaching the CGH film. We derive optimized conditions to reconstruct better holographic images and to reduce the speckle noise. FFT and Lohmann's algorithm are implemented with MS Visual BASIC 6.0 for the programming of binary-phase hologram.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.163-172
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• 2001

Fiber optic BOTDA (Brillouin Optical Time Domain Analysis) sensor was developed to be able to detect intrusion effect through several ten kilometer optical fiber. Fiber optic BOTDA sensor was constructed with 1 laser diode and 2 electro-optic modulators. The intrusion detection experiment was peformed by the strain inducing set-up installed on an optical table to simulating an intrusion effect. In the result of this experiment, the intrusion effect was well detected as the distance resolution of 3 m through the fiber length of about 4.81 km during 1.5 seconds.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.419-427
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• 1996

Thermally-stabilized fiber-optic current sensors are proposed and demonstrated. The sensor head is made of two coil formers combined perpendicularly. In this sensor head, bending-induced birefringences can be reduced to the level much smaller than those of the single former type because the eigen-axes of the two perpendicular coil formers are made orthogonal to each other. Moreover, thermal variation of the birefringence is also expected to be minimized by the orthogonality of the two polarization eigen-axes. We changed the temperature slowly in the range of 20~45$^{\circ}C$ during 100 minutes. The overall linearity of the sensor is better than 1.2% in the range of 0~1000A. The long-term fluctuation of the sensor is less than 1% when measured for 3 hours at 500A and room temperature. Two orthogonally-polarized laser diodes are combined together to make the incident beam unpolarized. In the signal processing, the signals are separated by two parts and normalized respectively, which minimize the efects of optical fluctuations coming from sources, connectors, etc.

• Journal of the Korean Magnetics Society
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• v.18 no.2
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• pp.71-74
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• 2008

In this paper, we have measured the effect of the optical spot size, incident upon the quadrant photodetector, on the optical displacement sensitivity of the optical beam deflection technique. We have built an optical displacement detection system based on the optical beam deflection method using 3 mW He-Ne laser and measured the displacement sensitivity with changing the optical spot size on the quadrant photodetector. We have also calculated the changes in the optical displacement sensitivity as a function of the incident laser spot size by modeling a circular optical spot with constant laser intensity. Our experimental and theoretical studies show that the optical displacement sensitivity increases with the decrease in the optical spot size. This suggests that in the design of the optical motion detection systems with sub-nanometer sensitivity, the displacement sensitivity can be optimized by reducing the size of the incident optical spot on the detector.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.23 no.1
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• pp.32-48
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• 2018

The mechanisms of $CH_4$ uptake into and release from the ocean are not well understood due mainly to complexity of the biogeochemical cycle and to lack of regional-scale and/or process-scale observations in the marine boundary layers. Without complete understanding of oceanic mechanisms to control the carbon balance and cycles on a various spatial and temporal scales, however, it is difficult to predict future perturbation of oceanic carbon levels and its influence on the global and regional climates. High frequency, high precision continuous measurements for carbon isotopic compositions from dissolved $CH_4$ in the surface ocean and marine atmosphere can provide additional information about the flux pathways and production/consumption processes occurring in the boundary of two large reservoirs. This paper introduces recent advances on optical instruments for real time $CH_4$ isotope analysis to diagnose potential applications for in situ, continuous measurements of carbon isotopic composition of dissolved $CH_4$. Commercially available, three laser absorption spectrometers - quantum cascade laser spectroscopy (QCLAS), off-axis integrated cavity output spectrometer (OA-ICOS), and cavity ring-down spectrometer (CRDS) are discussed in comparison with the conventional isotope ratio mass spectrometry (IRMS). Details of functioning and performance of a CRDS isotope instrument for atmospheric ${\delta}^{13}C-CH_4$ are also given, showing its capability to detect localized methane emission sources.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.