• Journal of the Korean Vacuum Society
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• 제15권2호
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• pp.162-167
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• 2006

The symmetry of the conduction-band minimum of $GaAs_{1-x}N_{x}$ is probed by performing resonant Raman scattering (RRS) on thin layers of $GaAs_{1-x}N_{x}(x{\leq}0.7)$ epitaxially grown on Ge substrates. Strong resonance enhancement of the LO(longitudinal optical)-phonon Raman intensity is observed with excitation energies near the $E_0$ as well as $E_+$ transitions, However, in contrast to the distinct LO-phonon line-width resonance enhancement and activation of various X and L zone-boundary phonons brought about slightly below and near the $E_+$ transition, respectively, we have not observed any resonant LO-phonon line-width broadening or activation of sharp zone-boundary phonons near the $E_0$ transition. The observed RRS results reveal that the conduction-band minimum of GaAsN predominantly consists of the delocalized GaAs bulk-like states of ${\Gamma}$ symmetry.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.195.1-195.1
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• 2014

최근 반자성 물질인 $MoS_2$를 수소 기체 속에서 열처리하게 되면 약한 강자성이 유발된다는 연구가 보고되었다. 본 연구에서는 강자성 발현을 수반하는 물리적 및 화학적 변화를 이해하기 위해서 단일층 $MoS_2$에 대한 라만분광 및 광발광 연구를 수행하였다. 기계적 박리법을 이용하여 $MoS_2$ 결정으로부터 단일층 및 이중층 $MoS_2$를 분리하여 $SiO_2/Si$ 기판에 전사한 후, $200^{\circ}C{\sim}500^{\circ}C$ 영역의 특정 온도에서 1시간 동안 열처리하였다. 배경 기체가 열처리 도중 $MoS_2$에 미치는 영향을 이해하기 위하여 수소 속 반응을 진공 상태와 비교하였다. 라만 스펙트럼에서는 큰 변화가 없었으나, 광발광의 세기는 수소 속 반응 후에 감소하고 진공 속 반응 후에는 증가하는 대조적인 결과를 보였다. AFM 측정으로부터는 열처리 후에 $MoS_2$ 표면에 뚜렷한 변화가 일어나지 않는다는 사실을 확인하였다. 본 발표에서는 수소와 진공 조건에서 관찰된 상이한 광발광 특성과 그래핀/$SiO_2/Si$에서 관찰된 p-형 도핑과의 상관관계를 설명하고자 한다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• 제46권6호
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• pp.519-526
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• 2018

In order to analyze space resources, it had to be brought to earth. However, using laser-induced breakdown spectroscopy(LIBS) and Raman spectroscopy, it is possible to analyze qualitative and quantitative analysis of space minerals in real time. LIBS is a spectroscopic method in which a high energy laser is concentrated on a material surface to generate a plasma, and the emitted light is acquired through a spectroscope to analyze the atomic composition. Raman spectroscopy is a spectroscopic method that analyzes the molecular structure by measuring scattered light. These two spectroscopic methods are complementary spectroscopic methods for analyzing the atoms and molecules of unknown minerals and have an advantage as space payloads. In this study, data were analyzed qualitatively by using principal component analysis(PCA). In addition, a mixture of two minerals was prepared and a quantitative analysis was performed to predict the concentration of the material.

• Analytical Science and Technology
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• 제17권3호
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• pp.225-229
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• 2004

The effect of the silicon acrylate as a reactive additive on the UV-curing photopolymerization reaction was studied by micro raman technique. For the study, acrylate systems and Darocur 1173 were used as oligomer and monomers, and a photo initiator, respectively. The content of silicon acrylate was within the range of 0-3 wt%. The extent of photo-polymerization reaction as a function of depth from the air interface was obtained from the conversion ratio of acrylate double bond calculated from the intensities of measured bands at $1410cm^{-1}$ and at $1635cm^{-1}$. Micro raman spectroscopic technique can be an useful tool for the investigation of the factors, which can affect the reaction progress, such as oxygen inhibition, composition of the formulations, depth, etc.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.159.2-159.2
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• 2014

간접띠간격(indirect bandgap)을 갖는 층상형 반도체 $MoS_2$는 두께가 줄어들어 단일층이 되면 층간 상호작용의 변화로 인해 ~1.8 eV의 직접띠간격(direct bandgap)을 갖게 된다. 이러한 초박형 $MoS_2$의 발광 특성을 활용하기 위해서는 원자 크기 수준에서 두께와 물성을 조절할 수 있는 화학적 표면개질법에 대한 이해가 필요하다. 최근 아르곤(Ar) 플라즈마를 이용한 $MoS_2$의 층상(layer-by-layer) 식각과 표면제어에 관한 연구결과가 보고되었으나 자세한 반응 메커니즘은 알려져 있지 않다. 본 연구에서는 산소 플라즈마에 의한 단일층 및 복층 $MoS_2$의 산화반응을 원자힘 현미경(AFM), 광전자 분광법(XPS), 라만 및 광발광 분광법을 통해 관찰하고 반응 메커니즘을 이해하고자 한다. 플라즈마로 생성된 산소라디칼과의 반응시간이 증가함에 따라 $E{^1}_{2g}$와 $A_{1g}$-진동모드에서 기인하는 라만 신호, 그리고 A와 B-엑시톤에서 유래하는 광발광의 세기가 감소함을 확인하였다. XPS와 AFM을 통해 반응이 진행됨에 따라 $MoS_2$의 상층이 $MoO_3$로 산화되면서 나노입자로 응집되어 표면형태가 변화하는 것을 확인하였다. 이 결과는 플라즈마 산화반응을 이용하여 $MoS_2$ 표면에 구조적 결함(defect)과 층상 식각을 유발하고 광발광 특성 제어를 위해 전자구조를 조절할 수 있다는 가능성을 보여준다.

• Journal of the Korean Chemical Society
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• 제62권5호
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• pp.358-363
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• 2018

The purpose of this study is to show the possibility of using Cu catalyst in removal of $NO_x$ from automobile exhaust which is regarded as the primary source of fine dust PM2.5. The energy and the bond lengths of the three possible structures of Cu-NO complex, which is formed by binding NO molecule to Cu, and the changes in IR and Raman spectra are calculated using MPW1PW91 method on the level of 6-311(+)G(d,p) of basis sets with Gaussian 09 program. As a result, the enthalpy of formation of the Cu-NO complexes are obtained as ${\Delta}H=104.89$, 91.98, -127.48 kJ/mol for the linear, bent, and bridging forms of them, respectively. And the bond lengths between N and O in NO complexes, which becomes longer than NO molecule, indicates that O is easily reduced from Cu-NO. In addition, the Cu-NO complexes using Cu catalyst can be easily measured by infrared or Raman spectroscopy because in the IR and Raman spectra of the NO and Cu-NO complexes the positon and the intensity of bands are definitely different in each vibration mode.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.92.1-92.1
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• 2018

표면증강 라만 산란(Surface Enhancement Raman Scattering, SERS) 기판의 경우, 규칙적인 배열을 갖는 나노구조 및 나노패턴 기판과 금속 나노구조의 고밀도 패킹이 고감도 화학물질 검출에 중요하다. 또한 폭넓은 응용 가능성에도 불구하고 기판 제작의 비용이 높고 재현성이 떨어져 상용화에 어려움을 겪고 있다. 본 연구에서는 다공성 알루미나(Anodic Aluminum Oxide, AAO)를 사용하여 Ag 나노입자가 코팅된 나노기둥 배열(Nanopillar array)을 갖는 고분자 필름의 SERS-active 기판을 제작하여 공정비용을 낮추고, 대면적화로 생산성을 높이고자 한다. 다단계 양극산화 공정과 복제 기술을 통해 다양한 지름과 높이를 갖는 맥주병 형상의 나노기둥 배열을 제조하였고, aspect ratio가 2.3인 나노기둥 배열에서 최대의 SERS 신호 강도와 높은 재현성을 확인하였다. SERS 신호의 세기는 Ag 나노입자가 코팅된 나노기둥 배열의 열처리 온도와 분석 물질의 농도에 따라 비례하며 이를 바탕으로 정량적인 고감도 진단, 바이오 화학 물질 센서에 매우 적합함을 알 수 있다.

• Polymer(Korea)
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• 제27권6호
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• pp.603-608
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• 2003

Syndiotactic polystyrene (s-PS) presents a very complex polymorphic behavior depending on the sample preparation history and exhibits a solid-solid phase transition. Each different polymorphic structures of the s-PS sample were prepared by annealing the samples from room temperature to 220 $^{\circ}C$. The structural changes induced by annealing were investigated using FTIR and FT-Raman spectroscopy. Although the crystallization kinetics of s-PS are difficult to investigate with DSC due to its fast crystallization rate, it was possible to determine crystallinity changes in the s-PS sample using infrared characteristic peaks with Beer-Lambert's law.

• Journal of the Korean Wood Science and Technology
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• 제36권4호
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• pp.52-57
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• 2008

In this study, the effects of carbonization temperature on the physico-chemical properties of porous wood charcoal are studied by FT-IR and Raman spectroscopies. IR studies showed that cellulose and hemicellulose are mostly decomposed in the precarbonization stage at $500^{\circ}C$, while the decomposition reaction of relatively more stable lignin lasts up to $700^{\circ}C$. Above $900^{\circ}C$, the peak at $1575cm^{-1}$ disappears and a new peak at $1630cm^{-1}$, which seems to be related to the new carbon deposit phase, is evolved. The results of Raman studies, which show the red-shift of D-band and the increase in the relative intensity of D- to G-band, indicate that the size of the crystalline becomes smaller with increasing the carbonization temperature.

• Journal of the Korean Vacuum Society
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• 제7권4호
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• pp.348-354
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• 1998

To investigate an influence of the thermal preheating for the substrates exerted on the heteroepilayers, the ZnTe epilayers are grown on the GaAs (100) at the substrate temperature of 450~$630^{\circ}C$ by hot wall epitaxy (HWE). For this purpose, double crystal rocking curve (DCRC) and photoluminescence (PL) are measured. The full width at half maximum of DCRC are the smallest in the ZnTe epilayers grown on the GaAs thermally etched at around both $510^{\circ}C$ and $590^{\circ}C$. However, at around $550^{\circ}C$ they increase due to the reconstruction of the atoms in the surface. And they increase due to the oxide layer at below $490^{\circ}C$ and due to the surface defects at above $610^{\circ}C$. From PL analysis, the full width at half maximum of the light hole exciton $X_{1s,th}$ and of the second-order Raman line increase at around $550^{\circ}C$. With the increasing preheating temperature, the intensities of Y-bands and of the oxygen bound exciton (OBE) peak related to an oxide layer on the GaAs surface generally decrease. From these experimental results, it's confirmed that the GaAs substrate thermally etched influences the ZnTe pilayers.