• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.280-286
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• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.321-326
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• 2013

The effect of rapid thermal annealing (RTA) on the optical properties of digital-alloy InGaAlAs multiple quantum well (MQW) structures have been investigated by using photoluminescence (PL) and time-resolved PL measurements as a function of RTA temperature. The MQW samples were annealed from $700^{\circ}C$ to $850^{\circ}C$ for 30 s in a nitrogen atmosphere. The MQW sample annealed at $750^{\circ}C$ exhibited the strongest PL intensity and the narrowest FWHM (Full width at half maximum), indicating the reduced nonradiative recombination centers and the improved interfaces between the wells and barriers. The MQW samples annealed at $800^{\circ}C$ and $850^{\circ}C$ showed the decreased PL intensities and blueshifted PL peaks compared to $750^{\circ}C$-annealed sample. The blueshift of PL peak with increasing RTA temperatures are ascribed to the increase of aluminum due to intermixing of gallium (Ga) and aluminum (Al) in the interfaces of InGaAs/InAlAs short-period superlattices. The decrease of PL intensity after annealing at $800^{\circ}C$ and $850^{\circ}C$ are attributed to the interface roughening and lateral composition modulation caused by the interdiffusion of Ga and Al and indium segregation, respectively. With increasing RTA temperature the PL decay becomes slower, indicating the decrease of nonradiative defect centers. The optical properties of digital-alloy InGaAlAs MQW structures can be improved significantly with optimum RTA conditions.

• Journal of Digital Contents Society
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• v.18 no.7
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• pp.1451-1456
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• 2017

In this research we discuss an integrated actuator-control system for advanced control of a smart Shape Memory Alloy (SMA) actuator. Toward this goal, we designed and fabricated an actuator-control module combining two SMA actuating units with a single-chip microprocessor, two different sensing elements, and an actuator driver. In our proposed system, sensing elements include a 6-axis single-chip motion sensor for orientation measurement and a circuit for resistance measurement of SMA wires. We experimentally verified our proposed actuator-control system using actuator driving, sensor data readings, and communication tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.414-414
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• 2013

InGaAlAs/InP은 $1.3{\sim}1.55{\mu}m$ 레이저 다이오드 응용을 위한 InGaAsP/InP를 대체하기 위한 물질로 많은 관심을 받아왔다. 디지털 합금 InGaAlAs 다중양자우물(multiple quantum wells: MQWs) 시료는 MBE (molecular beam epitaxy) 장비를 이용하여 n-InP 기판 위에 성장하였다. 양자우물과 장벽은 각각 (InGaAs)0.8(InAlAs)0.2와 (InGaAs)0.4(InAlAs)0.6 SPSs (short-period superlattices)로 $510^{\circ}C$에서 성장하였다. 발광특성을 향상시키기 위하여 질소분위기에서 $700^{\circ}C$ $750^{\circ}C$ 또는 $800^{\circ}C$에서 30초간 열처리(rapid thermal annealing: RTA)하였다. RTA 온도에 따른 디지털 합금 InGaAlAs MQWs의 발광특성을 분석하기 위해 PL (photoluminescence)과 TRPL(time-resolved PL)을 이용하였다. RTA 온도에 따른 InGaAlAs MQWs 시료의 발광 메카니즘 및 운반자 동력학을 연구하기 위하여 발광파장 및 온도에 따른 TRPL을 측정하였다. 저온(10 K)에서 PL 피크는 RTA 온도를 $700^{\circ}C$에서 $750^{\circ}C$로 증가하였을 때 1,242 nm에서 1,245 nm로 장파장 영역으로 이동하였다가 $800^{\circ}C$에서 열처리하였을 때 단파장 영역으로 이동하여 1,239 nm에서 나타났다. 또한 PL 세기는 RTA 온도를 증가함에 따라 증가함을 보이다가 RTA 온도를 $800^{\circ}C$로 증가하였을 때 PL 세기는 감소하였다. 발광소자 개발을 위한 InAlGaAs MQWs 시료의 최적의 열처리 조건을 이러한 PL과 TRPL 결과로부터 결정할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.444-444
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• 2013

변형 다중양자우물은 전자 소자와 광전자 소자에 응용할 수 있는 가능성 때문에 연구가 많이 진행되고 있다. 합성 물질들의 초격자를 연속적으로 증착, 성장하는 디지털 합금은 다중양자우물을 활용한 광전자 소자에서 응용가치가 상당히 높다. 현재 디지털 합금을 이용한 다중양자우물의 성장과 관련한 연구가 활발히 진행되고 있고, 특히 InzGaxAl1-z-xP/InAlP 다중양자우물은 광전자 소자로서의 응용가치가 부각되고 있다. 그러나 InzGaxAl1-z-xP/InAlP 다중양자우물의 성장 및 광학적 성질에 대한 연구는 많이 진행되었으나, InzGaxAl1-z-xP/InAlP 다중양자우물에서의 변형효과를 고려한 전자적 성질에 대한 연구는 미흡하다. InzGaxAl1-z-xP/InAlP 다중양자우물에 대한 전자적 성질의 연구는 광소자의 성능 향상을 위해 매우 필요하다. 본 연구에서는 디지털 합금 성장 방법으로 형성한 InzGaxAl1-z-xP/InAlP 다중양자우물의 부띠 사이 천이와 전자 분포를 고찰하였다. 온도에 따른 광루미네센스의 측정을 통해 InzGaxAl1-z-xP/InAlP 다중양자우물에서 나타나는 부띠 사이의 천이를 관찰하였다. 가변 메시 유한 차분법을 이용한 이산적 모델을 통해 변형효과가 다중양자우물 구조에서 부띠에 주는 영향을 조사하였다. 격자의 불일치로 인한 변형 효과와 8-band envelope function approximation을 고려한 슈뢰딩거 방정식을 사용하여 InzGaxAl1-z-xP/InAlP 다중양자우물에서의 전자 부띠 에너지와 에너지 파동 함수를 계산하였다. 계산한 부띠 사이 천이 에너지와 광루미네센스 측정에서 보인 엑시톤 천이 에너지를 비교하였을 때, 작은 차이 값이 나타났다. 증착과정에서의 이종접합사이에서 발생하는 불확실성을 고려한다면 이 차이 값은 오차범위 안에 포함되며, 계산 값과 실험 값이 잘 일치하는 것으로 볼 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.160-160
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• 2006

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.4
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• pp.44-49
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• 2008

The characteristic of magnesium alloy is the most light in utility metal, the effect of electromagnetic wave interception, excellent specific strength and absorptiveness of vibration. Although magnesium alloy with above characteristic is a subject matter which is suitable in world-wide tendency of electrical component frame, sheet magnesium alloy is difficult to process. Therefore, forming analysis of sheet magnesium alloy and applying warm-working to process are indispensable. Among Finite element method, the static implicit finite element method is applied effectively to analyze sheet magnesium alloy stamping process, which include the forming stage. In this study, it was focused on the crack, wrinkling and spring back on sheet magnesium alloy stamping by the static implicit analysis. According to this study, the result of simulation will give engineers good information to access the forming technique on sheet magnesium alloy. And its application is being increased especially in the production of electrical component frame for the cost reduction, saving of defective ratio, and improvement of Productivity.

• Transactions of Materials Processing
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• v.30 no.1
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• pp.35-42
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• 2021

Magnesium alloys are used in electronic devices such as laptops due to their lightweight features as well as vibration absorption and electromagnetic shielding properties. However, the precision of electronics is limited by the large number of small and precise ribs, the cost-effective manufacture of which requires appropriate technology. Plate forging is an efficient manufacturing process that can address these challenges. In this study, plate forging of magnesium alloys was investigated specifically for the fabrication of laptop cover. The plate forging process with back-pressure was used for near-net shape formation. Finite element analysis was used to select appropriate variables for back-pressure formation to generate ribs of various sizes and shapes without defects. The reliability of the analysis was verified to manufacture the prototype. The effect of back-pressure can be verified via fabrication of prototypes as well as structure and forming analysis based on finite element method. The process design factor of back-pressure increases formability without defects of under-filling and flow-through. Moreover, the tensile strength was maintained even after high temperature plate forging at 370 ℃, and the elongation was improved.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.55-55
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• 2004

최근 전기 전자 장치의 사용이 급속하게 증가하고 있다. AC모터, 프린터, 디지털 컴퓨터, 계산기, 핸드폰 등과 같은 장비들은 많은 전자파를 방출하고 있다. 이러한 전자파에 노출로 암과 같은 질병이 발생할 수도 있다는 논란이 전 세계적으로 관심이 집중되고 있으며, 전자파에너지를 차패할 수 있는 재료 개발의 필요성이 절실히 요구되고 있는 실정이다. 일반적으로 금속과 합금이 전자파 차폐목적으로 사용되었다 그러나 이러한 재료들은 중량이 무겁고 가요성이 떨어지는 단점이 있다.(중략)

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.5
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• pp.14-20
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• 2006

In recent year, as the robot technology is developed, the researches on the artificial muscle actuator that enables robot to move dexterously like biological organ become active. Actuators are key technologies underpinning robotics. Breakthroughs in actuator technology, particular in terms of power-to-weight ratio, or energy-density, will have significant impacts upon the design and control of robotic system. In this paper, a new approach to design and control of shape memory alloy(SMA) actuator is presented to drive the robot hand. SMA wire is divided into many segments and their thermal states of the SMA are controlled individually in a binary manner. This control manner will reduce the hysteresis that the SMA material has and it becomes the fundamental technology to develop the anthropomorphic robot hand. In this paper, the mechanism In the digital step motor of the shape memory alloy that is driven by the segmented binary control, which is a new control technique, is studied. This SMA digital step actuator applies for the robot hand and the driving mechanism of the robot hand is investigated.