• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.107-120
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• 1996

The research activities on the bulk crystal growth presented in the journal of the Korean Association of Crystal Growth from 1991 to 1995 have been reviewed.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1308-1318
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• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Journal of Korean Electronics
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• v.3 no.1
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• pp.75-81
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• 1983

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.43-50
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• 1992

$ LiNbO_3$ single crystals were grown using the Czochralski Method at various pulling speeds. Macroscopic defects such as cracks, bubbles and cellular structures were observed in some crystals. Cracks and bubbles observed in the crystals depended on the pulling speed and cooling rate. $ LiNbO_3$ crystals of about 15mm diameter could be grown properly at 6-7mm/h pulling speed and $ 20^{circ}C/h$ cooling rate. In order to investigate dielectric properties and optical properties for device application, these properties were measured for the sample cut along a axis and c axis at different temperatures.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.42-48
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• 1993

KTP(KTiOPO4) single crystals were grown by the TSSG(top seeded solution growth) method using the Ksp401s flux. A heat-pipe based growing furnace was used, and the temperature stability and the homogenity of the growing solution in the platinum crucible were within the level of It 0.5℃ and ±0.9℃, respectively. The effects of some operating variables such as operating temperature range, initial cooling rate, forced stirring, reuse of the flux were investigated. As the initial cooling rate was decreased to the degree of 0.1℃/hr and some proper stirring effect by the crystal rotation was introduced to the present experimental condition, bigger and better crystals without inclusion grew. A single crystal with the maximum sixte of 44 ×39 ×17mm3 was obtained and showed the SHG conversion efficiency of 21.39) even without the anti-refilection coating.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.3
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• pp.388-397
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• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1667-1675
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• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.205-210
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• 2003

Alexandrite-like cubic zirconia single crystals were grown by skull melting method. The R.F. generator (output power is 35 ㎾) used for skull melting was operated at 2 MHz. The grown crystals were doped with up to 1 or 1.5 wt% and 0.5 or 1 wt% of rare earth metal ion (Pr, Nd) on$ ZrO_2-Y_2O_3$ (12 mol%). The grown crystals were cut for slice (0.25 mm) and round brilliant (12 mm in diameter). The cut stones were heat treated in air and nitrogen at $1000^{\circ}C$ for 2 hours and their optical absorption spectra ($\lambda$ = 400∼700 nm) data were obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.8-13
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• 2016

A top-seeded solution growth (TSSG) is a method of growing SiC single crystal from the Si melt dissolved the carbon. In this study, multiphysics modeling was conducted using COMSOL Multiphysics, a commercialized finite element analysis package, to get analytic results about electromagnetic analysis, heat transfer and fluid flow in the Si melt. Experimental results showed good agreements with simulation data, which supports the validity of the simulation model. Based on the understanding about solution growth of SiC and our set-up, crystal growth was conducted on off-axis 4H-SiC seed crystal in the temperature range of $1600{\sim}1800^{\circ}C$. The grown layer showed good crystal quality confirmed with optical microscopy and high resolution X-ray diffraction, which also demonstrates the effectiveness of the multiphysics model to find a process condition of solution growth of SiC single crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.177-184
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• 2000

The effect of the buyancy and thermocapillarity for differnent aspect ratio of flow field on melt motion and mass transfer has been numerically investigated in magnetic Czochralski crystal growth of silicon. During the process of crystal growth, the melt depth of crucible reduces so the aspect ratio of flow field also reduces. Therefore the shape of magnetic field of the flow field changes and the flow pattern also changes significantly. Together with the melt flow which forms the Marangoni convection (or thermocapillary flow) that comes from the inside the flow field, a flow circulation is observed near the corner close both to the crucible wall and the free surface. Due to this circulation, buoyancy effect has been turned out to be local rather than global. As the aspect ratio decreases, the radial component of the magnetic field prevails compared with the axial component in the flow field. Under the influence of this magnetic field, the melt flow and the temperature distribution in a meridional plane tend to depend on the radial position. As the aspect ratio decreases, the temperature gradient near the edge of the crystal decreases yielding smaller thermocapillarity, and the oxygen concentration near the crystal and the oxygen incorporation rate also decrease.