• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.883-891
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• 2013

In wireless smart phone charging scenario, the transmitter pad is larger than the size of the receiver pad. Thus, it is important to supply a constant power to the receiver regardless of its location. In this paper, we propose a new method to regulate the receiver's power by adjusting a drain bias of class E power amplifier. The proposed LF-band wireless power transfer system is as follows: a buck converter power supply which is controlled by a pulse width modulation(PWM) IC TL494, a class E amplifier using a low cost IRF510 power MOSFET, a transmitter coil whose dimension is $16cm{\times}18cm$, a receiver coil whose dimension is $6cm{\times}8cm$, and a full bridge rectifier using Schottky diodes. A measured performance show a maximum output power of 4 W and system efficiency of 67 % if we fix the bias voltage. If we adjust the bias voltage, the received power can be maintained at a constant power of 2 W regardless of receiver pad location.

• Journal of Bio-Environment Control
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• v.25 no.3
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• pp.139-145
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• 2016

The objective of this study was to compare the growth and light use efficiency of red leaf lettuce grown under three types of combined light-emitting diodes (LEDs) and fluorescent lamps (FL) in a closed-type plant production system. The eighteen days-old lettuce seedlings of red leaf lettuce (Lactuca sativa L., 'Jeokchima') were transplanted to the close-type plant production system equipped with three types of combined LEDs with red (R, 655 nm), blue (B, 456 nm), green (G, 515 nm), and white (W, 456 nm + 558 nm) (R:B=8:2, R:W:B=8:1:1, R:G:B=8:1:1) and FL. The seedlings were grown under normal growth conditions ($20^{\circ}C$, $181{\pm}4{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$, 12 h photoperiod) for four weeks. Lettuce plants grown under FL had significantly higher leaf shape index than those under all LED treatments. Although growth of shoots and roots was not show any significant difference among LED treatments, all of the LED treatments induced about 34% higher shoot fresh weight than that of the FL. On the other hands, the total power consumption of FL was 145 kW for 4 weeks, while the mean value of LED treatments was 54 kW, which was about 3 times lower value than that of the FL. The light use efficiency based on dry matter in LED treatments was about 34 mg/W and this was about 3.5 times higher energy saving value than the FL. In conclusion, this study showed that irradiation of optimal combined LEDs in closed-type plant production systems can improve the lettuce growth as well as maximize in light use efficiency through energy saving than the FL.

• Progress in Medical Physics
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• v.17 no.1
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• pp.17-23
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• 2006

In Vivo dosimetry is a method to evaluate the radiotherapy; it is used to find the dosimetric and mechanical errors of radiotherapy unit. In this study, on-line In Vivo dosimetry was enabled by measuring the skin dose with MOSFET detectors attached to patient's skin during treatment. MOSFET dosimeters were found to be reproducible and independent on beam directions. MOSFET detectors were positioned on patient's skin underneath of the dose build-up material which was used to minimize dosimetric error. Delivered dose calculated by the plan verification function embedded in the radiotherapy treatment planning system (RTPs), was compared with measured data point by point. The dependency of MOSFET detector used in this study for energy and dose rate agrees with the specification provided by manufacturer within 2% error. Comparing the measured and the calculated point doses of each patient, discrepancy was within 5%. It was enabled to verify the IMRT by using MOSFET detector. However, skin dosimetry using conventional ion chamber and diode detector is limited to the simple radiotherapy.

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.61-68
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• 2010

Optical simulation methods were applied to the edge-lit LED backlight for LCD TV applications in order to optimize the optical structure of the light guide plate(LGP), and thus to improve the uniformity properties by removing the bright spots caused by LED's. The edge-lit LED backlight consisted of three white LED's with a lamp cover, a light guide plate, and a reflection film. When there was no pattern on the entrance side surface of the LGP, the illuminance uniformity was sensitively dependent on the distance d between the LED and the entrance surface. The illuminance uniformity increased with d but its increasing rate slowed down when d was beyond ~ 1.5 mm. When micro-patterns such as a lenticular lens array (LLA) or a serration pattern were formed on the entrance surface, the illuminance uniformity was improved substantially even for the case of very small d. At the same simulation condition, the lightguide with serration pattern showed a better uniformity than that with LLA pattern. Additional improvement could be achieved by changing the refractive index of the micro-patterns. These results suggest that using micro-patterns is a very effective way to reduce the bright spots due to their refracting function for the concentrated incident rays onto the LGP.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.71-80
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• 2007

This paper presents a new push-push VCO technique that extracts a second harmonic output signal from a capacitive commonnode in a negativegm oscillator topology. The generation of the $2^{nd}$ harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. Comparative investigations show the technique is more power efficient in the high-frequency region that a conventional push-push technique using an emitter common node. Prototype 12GHz and 17GHz MMIC VCO were realized in GaInP/GaAs HBT technology. They have shown nominal output power of -4.3dBm and -5dBm, phase noise of -108 dBc/Hz and -110.4 dBc/Hz at 1MHz offset, respectively. The phase noise results are also equivalent to a VCO figure-of-merit of -175.8 dBc/Hz and -184.3 dBc/Hz, while dissipate 25.68mW(10.7mA/2.4V) and 13.14mW(4.38mA/3.0V), respectively.

• Korean Journal of Optics and Photonics
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• v.16 no.1
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• pp.13-20
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• 2005

Fiber-Bragg-grating external cavity laser(FGL) modules were fabricated and experimentally analyzed. Proposed as a cost-effective solution for optical sources in the WDM-PON access network, FGL modules were packaged to TO-CAN type. We obtained a low threshold current of 13 mA, and an optical output power of 3.6 mW with a bias current of 60 mA at $25^{\circ}C$. The lasing wavelength dependencies on current and temperature were as small as 5.2 pm/mA and 30 pm/$^{\circ}C$, respectively. These change rates of the wavelength with the temperature and current are smaller than those of the DFB laser. Single-mode oscillations with the side-mode suppression ratio(SMSR) over 30 dB are maintained above the threshold current level. The FGL modules can be directly modulated at 155 Mbps, PRBS(2$^{23}$ -1) NRZ signal. Through the BER plots, we did not see the significant degradations before and after the transmission over 20km of the SMF at 155 Mb/s.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.122-129
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• 2003

In the case of a AIGalnP/GaP system rectangular parallelepiped high brightness LED which has side walls etched to be slanted off the vertical direction, we have studied the effects of lossy electrodes and material absorption and etching depth and angle of side walls on its light extraction efficiency. If LEDs have no electrodes, in order to obtain an 80％ light extraction efficiency of a TIP (truncated inverted pyramid) LED, the side-etched LEDs should have an etching angle of 22$^{\circ}$~45$^{\circ}$ and an etching depth of 8~17% of a dice height and an absorption coefficient less than 1 $cm^{-1}$ / In case of etching depth of 16~39% of a dice height, we can obtain a 90% light extraction efficiency of a TIP LED. But when LEDs have two electrodes and no absorption loss, in order to obtain an 80％ light extraction efficiency of a TIP LEBs, the side-etched LEDs should have an etching angle of 25$^{\circ}$-45$^{\circ}$ and an etching depth of 30～36% of a dice height. In case of etching depth of 57~71％ of a dice height, we can obtain a 90％ light extraction efficiency of a TIP LED.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.184-189
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• 2010

Organic light-emitting diodes (OLEDs) with single emissive layer structures using two fluorescent dopants were fabricated and the device was composed of ITO / NPB ($700{\AA}$) / MADN : C545T - 1.0% : DCJTB - 0.3% ($300{\AA}$) / Bphen ($300{\AA}$) / LiF ($10{\AA}$) /Al ($1,000{\AA}$). C545T and DCJTB were functioned as green fluorescent dye and red fluorescent dye under MADN as host material. Concentrations of C545T and DCJTB was changed in emissive layer of MADN. Optimized OLED device using two fluorescence dopants shows emission efficiency of 8.42 cd/A and luminescence of 3169 cd/$m^2$at 6 V with CIE color coordinate, (0.43, 0.50). Electroluminescence of optimized OLED showed two peak at 500 and 564 nm according to C545T and DCJTB. These results indicate that F$\ddot{o}$ster energy transfer energy transfer was from MADN to C545T and rather than to DCJTB continuously.

• Journal of rehabilitation welfare engineering & assistive technology
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• v.10 no.3
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• pp.237-242
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• 2016

The major advantage of slip-ring technology in Spiral CT is that it facilitates continuous rotation of the x-ray tube, so that volume data can be acquired from a patient quickly. Not only for such a fast scan, but also for the dose reduction purpose, high signal-to-noise ratio and fast data acquisition system is required. In this study, we have built a multi-channel photodetector and multi-channel data acquisition system for CT application. The detector module consisted of CdWO4 crystal and Si photodiode in 16 channels. For the performance test of the preamplifier stage, both the transimpedance and switched integrator types are optimized for the photodetector modules. Switched integrator showed better noise performance in the limited bandwidth which is suitable for the current CT application. The control sequence for data acquisition and 20 bit ADC is designed with VHDL(Very High Speed Integrated Circuit Hardware Description Language) and implemented on FPGA(Field Programmable Gate Array) chip. Our Si photodiode detector module coupled to CdWO4 crystal showed comparable signal with other commercially available photodiode for CT. Switched integrator type showed higher SNR but narrower bandwidth compared to transimpedance preamplifier. Digital hardware is designed by FPGA, so that the control signal could be redesigned without hardware alteration.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.