• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.1
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• pp.12-20
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• 2009

In this paper, we introduced the large signal model of a PIN diode and presented the measurement methods for each parameter of the large signal model. The elements of the PIN diode model are classified into the elements with a constant value and the elements depending on the junction voltage. We implemented the constant elements by lumped elements and the voltage-dependent elements by a SDD in ADS. The developed large signal model was successfully worked with various circuit simulations, such as simple DC, AC, S-parameter, Transient, and HB simulations. In order to verify the developed large signal model, we compared that the measured results of a limiter and a attenuator with the simulated results using the PIN diode model, which are in good agreement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.1 s.92
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• pp.92-101
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• 2005

In this paper, the Gunn diode mount is experimentally designed for use in a W-band waveguide voltage controlled oscillator(VCO). The role of the Gunn diode mount is to match the low impedance of the Gunn diode to the high impedance of waveguide. Computer simulations of VCO characteristics such as center frequency, frequency tuning range, and output power are carried out for various values of disc diameter, disc height, post diameter, and utilized in the experimental optimization of the Gunn diode mount. The designed VCO shows excellent characteristics; 93.9 GHz center fiequency, 600 MHz frequency tuning range with $2{\%}$ linearity, 16 dBm output power.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.34-40
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• 1994

First observation of uranium using a diode laser was published recently. The experiment was performed by the optogalvanic spectroscopy using diode lasers. A laser source causes the current change in a hollow cathode discharge lamp when metal atoms in plasma absorb the diode laser light. The optogalvanic signal is collected by detecting the current change. This work is the extended investigation of our previous research, the uranium detection using a diode laser. New electronic transitions of uranium and thorium in 775∼850 nm were investigated using diode lasers. In addition, the Rb(Ⅰ) optogalvanic spectra at 780.02 nm and 794.76 nm were studied. The Rb(Ⅰ) spectrum at 780.02 nm showed the isotopic features and hyperfine splittings. This work provides a key idea that the diode lasers are useful in the specrochemical analysis of the radioactive actinides that have a rich spectrum with transitions which can be easily reached with AlGaAs diode lasers. Also, this study shows that the diode lasers can be an important tool to find the spectroscopic parameters of actinides and rare earth elements which have not known.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.3
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• pp.258-264
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• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.814-819
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• 2008

In this paper, a design of broadband detectors utilizing two ultra-wideband transitions is described for the first time, and the implementation method and measurement results of the detectors are provided. Two ultra-wideband transitions are used for input/output matching circuits for the diode detectors. Two detectors have been implemented using general Schottky diodes and zero-bias Schottky diodes. With general Schottky diodes, the fabricated detector provides less than 10 dB return loss from 11 GHz to 20 GHz, and the detector sensitivity is 30 mV/mW. The detector with zero-bias Schottky diodes shows significantly higher detection sensitivity(300 mV/mW).

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.1
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• pp.63-67
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• 2015

White light-emitting diode (WLED) is growing interest in using both illumination and communications. This paper reports visible light communication (VLC) composed of a super bright white light-emitting diode, low cost commercial photo-diode and a Fresnel lens. LED driver is consisted of the power MOSFET and MOSFET driver that switches the LED on and off. The modulation bandwidth of the LED used was determined to be 8 MHz. However, it was possible to communicate up to 1 Mbps under illumination of 500 lx because of the weak signal power and a low spectral sensitivity of the SHF213 as a PIN photodiode. In order to enhance the system bandwidth, the LED light was focused on the PIN photodiode by use of the Fresnel lens. As a result of that, visible light link was operated up to modulation bandwidth of the LED. The signal to noise ratio can be improved by 40 dB using an optical concentration at the receiver.

• Journal of Advanced Navigation Technology
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• v.21 no.5
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• pp.501-507
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• 2017

When zenor diode load current is necessary to be controlled by input voltage as a circuit load, existing voltage controlling method cannot be applied to it because the output current of zenor diode is changed due to breakdown voltage variations. We propose input voltage controlled output current source regardless of zenor breakdown voltage variation due to degradation resulted from severe current applied electronic component life test as a circuit load in this paper. We show breakdown voltage characteristics of this zenor diode circuit through simulation, applying adequate values for each component in order to verify the circuit composed of that method, and then show the result in which output current is controlled by input voltage. We confirmed the output current varies proportional to input voltage, and developed circuit shows a constant value independent of zenor diode breakdown voltage variations due to component degradations.

• Journal of the Korean Institute of Telematics and Electronics
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• v.7 no.2
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• pp.33-42
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• 1970

This report is concerned with the fahrication with the falricationof silicon VVC diode by the double diffusion planer technique. At first, some design charts for VVC diode were derived by considering the voltage-capacitance relations, the critical field intensity at the metallurgical junction, and the cut-off frequency of the diode. These charts enables the fabrication engineers to design VVC diode easily without going into the sophisticated design theory. We started with a 2.5 ohm-cm n-type epitaxial silicon wafer. The phosphorous was diffused by POCl3 impurity source. Then boron diffusion followed make hyperabrupt p-n junction by BN source. The maximum to minimum capacitance ratio of the diode as a tuning diode for a TV tuner made in these experiments was 4:1. Measured electrical characteristics of the sample diodes showed in good agreement with the theoretical expectations. Slicing and polishing technique of the silicon wafer and diffusion technique of the impurity atoms, which were employed in our study, are also stated briefly in this report.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.278-284
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• 2010

In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.