• Title/Summary/Keyword: 논

Search Result 436,053, Processing Time 0.345 seconds

Study of Downward Speed Limit of Main Roads on Traffic Accident and Effect Analysis - In Busan Metropolitan City - (간선도로 최고속도제한 하향이 교통사고에 미치는 영향 및 효과분석 - 부산광역시를 중심으로 -)

  • Lim, Chang-Sik;Choi, Yang-Won
    • KSCE Journal of Civil and Environmental Engineering Research
    • /
    • v.38 no.1
    • /
    • pp.81-90
    • /
    • 2018
  • The purpose of this study is to evaluate the effect of downward speed limit of urban arterial roads at 29 sites in Busan Metropolitan Police Agency to reduce road traffic accidents from '10 to '15. As a result of analyzing the traffic accidents occurred for 1~3 years after the decrease in the speed limit, the number of traffic accidents decreased by 3.09% and the number of injured persons decreased by 8.76%, but the number of deaths decreased by 36.73% The results of this study are as follows. The average speed reduction rate of 6.31km/h was decreased by investigating the change of the vehicle speed before and after the downward speed limit, and the change of average speed was statistically significant in most of the sections. The rate of compliance with the speed limit increased by 10.26% p, which is considered to have greatly improved overall traffic safety. A survey conducted by residents near the target area with a lower speed limit showed that 57.9% of the respondents felt the driving speed of the vehicle was lowered. However, this project was focused on vehicles with limited speed road signs and traffic safety signs, Only 25.8% of respondents said walking safety was improved. In the future, it is necessary to consider the safety of pedestrians by improving roads around roads such as road curvature and separation. In addition, there is a clear positive result in terms of decreasing the fatal accidents in the downward speed limit zone of Busan Metropolitan Subway. However, more detailed analysis is needed for the 29 accidents. Therefore, it is expected that traffic practitioners will be able to utilize it as a basis to increase the accident reduction effect by setting an appropriate speed limit based on the easy and objective grounds.

Development of Convenience Evaluation Method of Urban Railway Station based on Universal Design - Focusing on Suseo Station - (유니버설디자인 기반 도시철도역사 편의성 평가방법 개발 - 수서역을 대상으로 -)

  • Lee, Sang Hwa;Kim, Hwang Bae;Kim, Hyun Joo
    • KSCE Journal of Civil and Environmental Engineering Research
    • /
    • v.38 no.1
    • /
    • pp.159-165
    • /
    • 2018
  • In recent years, universal design concepts have been introduced that are designed to make everybody more comfortable and safe to use for products, buildings, environments, services, and so on. In the case of urban railroad history, it is important to maintain facilities that incorporate the universal design concept because it is an important facility that serves as a base of city life and there are various users. This research is the last annual task of 5 years as part of the project of "Development of Technique to Improve the Convenience of Urban Railway History User" by the National Institute of Transportation Technology Promotion Agency. The purpose of this study is to develop criteria and method of facilities convenience evaluation based on UD and to evaluate user convenience by selecting test bed station. For this purpose, the UD principle of the historic facilities of Weihai Urban Railway was established and detailed evaluation criteria were presented. As a result of evaluating the test bed history using the 5-point Likert scale of the joint research institute / railway operating agency / expert, 50.3% of convenience improvement was achieved. As a result of evaluating the applicability according to the UD principle, 48.7% Respectively. The evaluation criteria and methodology based on the UD suggested in this study is a quantitative method for evaluating UD application of urban railway facilities in the future.

Effectiveness Analysis and Application of Phosphorescent Pavement Markings for Improving Visibility (축광노면표시 시인성 개선에 따른 경제성 분석 및 적용방안)

  • Yi, Yongju;Lee, Kyujin;Kim, Sangtae;Choi, Keechoo
    • KSCE Journal of Civil and Environmental Engineering Research
    • /
    • v.37 no.5
    • /
    • pp.815-825
    • /
    • 2017
  • Visibility of lane marking is impaired at night or in the rain, which thereby threatens traffic safety. Recently, various studies and technologies have been developed to improve lane marking visibility, such as the extension of lane marking life expectancy (up to 1.5 times), improvement of lane marking equipment productivity, improvement of lane marking visibility by applying phosphorescent material mixed paint. Cost-benefit analysis was performed with considering various benefit items that can be expected. About 45% of traffic accidents would be prevented by improving lane marking visibility. Additionally, accident reduction benefit and traffic congestion reduction benefit were calculated as much as 246 billion KRW per year and 12 billion KRW per year, respectively, by reducing repaint cycle due to enhanced durability. 45 billion KRW per year is expected to reduced with improved lane detection performance of autonomous vehicle. Meanwhile, total increased cost when introducing phosphorescent material mixed paint to 91,195km of nationwide road is identified as 1922 billion KRW per year. However, economic feasibility could not be secured with 0.16 of cost-benefit ratio when applied to the road network as a whole. In case of "Accident Hot Spot" analyzing section window (400m), one or more fatality or two or more injured (one or more injured in case of less than 2 lanes per direction) per year were caused by pavement marking related accident, economic feasibility was secured. In detail, 3.91 of cost-benefit ratio is estimated with comparison of the installation cost for 5,697 of accident hot spot and accident reduction benefit. Some limitations and future research agenda have also been discussed.

Impact Evaluation of Water Footprint on Stages of Drainage Works (배수공 각 작업 단계별 물발자국 영향평가)

  • Chen, Di;Kim, Joon-Soo;Batagalle, Vinuri;Kim, Byung-Soo
    • KSCE Journal of Civil and Environmental Engineering Research
    • /
    • v.40 no.2
    • /
    • pp.225-231
    • /
    • 2020
  • Fresh water that can be used by a person of the total amount of water on the planet is increased because it is less than 0.01 % except underground water, ice and snow, etc. water management response need. In order to protect and efficiently utilize water resources, major countries are conducting water footprint studies that can quantitatively estimate the amount of water put into the operating phase of the resource harvesting phase, mainly agriculture. Korea has also recently developed a number of policies in order to cope with water shortages, and in the construction industry, as well as the need for basic research to support it has been emphasized. This study was constructed DB up to the raw material harvesting step, the transport step, the production stage in order to estimate the water consumption of resources to be put into the work process to target the drainage of the road. Water usage estimation method was utilized the method presented in the Water Footprint Manual and the environmental score card certification guide, unit water usage each drainage main method was calculated after estimating the water footprint considering the water character factor, indirect water and the direct water, the water consumption factor of material input to each process. Brown asphalt, rebar, remicon of the drainage material as a result of the water footprint calculation accounted for 97 % of the total. Drainage method is a culvert, a side channel, a culvert wing wall, reinforced concrete open channel accounted for 92.2 % of the total. Drainage total step-by-step calculated water consumption and water footprint was found in order of raw material harvesting step, transport stage, production stage. Water footprint each drainage method or total drainage material calculated in this study can be used as a base data in the agricultural and construction sectors. In order to increase the reliability of the analysis, it is believed that further overseas databases will be needed for continuous review and research.

An Application of Generalizability Theory to Self-introduction Letter and Teacher's Recommendation Letter Used in Identification of Mathematical Gifted Students by Observations and Nominations (관찰.추천에 의한 수학영재 선발 시 사용되는 자기소개서와 교사추천서 평가에 대한 일반화가능도 이론의 활용)

  • Kim, Sung-Chan;Kim, Sung-Yeun;Han, Ki-Soon
    • Communications of Mathematical Education
    • /
    • v.26 no.3
    • /
    • pp.251-271
    • /
    • 2012
  • The purpose of this study is: 1) to determine error sources and the effects of each error source, 2) to investigate optimal measuring conditions from holistic and analytic scoring methods, and 3) to compare the value of reliability between Cronbach's alpha and the generalizability coefficient in self-introduction letter and teacher's recommendation letter based on the generalizability theory in identification of mathematical gifted students by observations and nominations. Data of this study were collected from the science education institute for the gifted attached to the university located within in a capital city for the 2011 academic year. Scores form two raters using holistic and analytic scoring methods in both assessment types were used. The results of this study were as follows. First, as to both assessment types, error sources for people were relatively large regardless of scoring methods. However, error sources for raters in holistic scoring methods had a more significant impact than those of analytic scoring methods. Second, to set optimal measuring conditions in the self-introduction letter and teacher's recommendation letter, if we fixed the number of raters into 2 based on holistic scoring methods, at least 5 and 10 content domains were needed, respectively. In addition, the number of items in teacher's recommendation letter should be more than 3 when we fixed the number of content domains into 4, and the number of items in self-introduction letter should be more than 8 when we fixed the number of content domains into 6 using analytic scoring methods. Third, Cronbach's alpha having only a single source of errors was higher than the generalizability coefficient regardless of assessment types and scoring methods. Hence we recommend that generalizability coefficient based on various error sources such as raters, content domains, and items should be considered to keep a satisfactory level of reliability in both assessment types.

InSb 적외선 소자제작을 위한 $SiO_2$, $Si_3N_4$증착 온도에 따른 계면 특성 연구

  • Kim, Su-Jin;Park, Se-Hun;Lee, Jae-Yeol;Seok, Cheol-Gyun;Park, Jin-Seop;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.57-58
    • /
    • 2011
  • III-V족 화합물 반도체의 일종인 InSb는 77 K에서 0.23 eV의 작은 밴드 갭을 가지며 높은 전하 이동도를 가지고 있기 때문에 대기권에서 전자파 흡수가 일어나지 않는 3~5 ${\mu}m$범위의 장파장 적외선 감지가 가능하여 중적외선 감지 소자로 이용되고 있다. 하지만 InSb는 밴드 갭이 매우 작기 때문에, 소자 제작시 누설전류에 의한 소자 특성의 저하가 문제시 되고 있다. 또한 다른 화합물 반도체에 비해 녹는점이 낮고, 휘발성이 강한 5족 원소인 Sb의 승화로 기판의 화학양론적 조성비(stoichiometry)가 변하기 쉬워, 계면특성 저하의 원인이 된다. 따라서 우수한 특성을 가지는 적외선 소자의 구현을 위해서, 저온에서 계면 특성이 우수한 고품질의 절연막 증착 연구가 필수적이다. 본 연구에서는 InSb 기판 위에 $SiO_2$, $Si_3N_4$의 절연막 형성시 증착온도의 변화에 따른 계면 트랩 밀도를 분석하였다. $SiO_2$, $Si_3N_4$ 절연막은 플라즈마 화학 기상 증착법(PECVD)을 이용하여 n형 InSb 기판 위에 증착하였으며, 증착온도를 $120^{\circ}C$부터 $240^{\circ}C$까지 변화시켰다. Metal oxide semiconductor(MOS) 구조 제작을 통하여, 커패시턴스-전압(C-V)분석을 진행하였으며, 절연막과 InSb 사이의 계면 트랩 밀도를 Terman method를 이용하여 계산하였다[1]. 또한, $SiO_2$$Si_3N_4$의 XPS 분석과 TOF-SIMS 분석을 통하여 계면 트랩 밀도의 원인을 밝혀 보았다. $120{\sim}240^{\circ}C$ 온도 범위에서 계면 트랩 밀도는 $Si_3N_4$의 경우 $2.4{\sim}4.9{\times}10^{12}cm^{-2}eV^{-1}$, $SiO_2$의 경우 $7.1{\sim}7.3{\times}10^{11}cm^{-2}eV^{-1}$ 값을 나타냈고, 두 절연막 모두 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 그러나 모든 샘플에서 $Si_3N_4$의 경우, flat band voltage가 음의 전압으로 이동한 반면, $SiO_2$의 경우, 양의 전압으로 이동하는 것을 확인할 수 있었다. 계면 트랩 밀도 증가의 원인을 확인하기 위해서, oxide를 $120^{\circ}C$, $240^{\circ}C$에서 증착시킨 샘플을 XPS 분석을 통하여 깊이에 따른 성분분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 계면에서 $In_2O_3$$Sb_2O_3$ 피크의 증가를 확인하였다. 이는 계면에서 oxide양이 증가함을 의미하며, 이렇게 생성된 oxide는 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. Nitride 절연막을 증착시킨 샘플은 TOF-SIMS 분석을 통해, 계면에서의 성분 분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 In-N, Sb-N, Si-N 결합의 감소를 확인하였다. 이렇게 분해된 결합들의 dangling 결합이 늘어 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. 최종적으로, 소자특성을 확인 하기 위하여 계면 트랩 밀도가 가장 낮게 측정된 $200^{\circ}C$ 조건에서 $SiO_2$ 절연막을 증착하여 InSb 적외선 소자를 제작하였다. 전류-전압(I-V) 분석 결과 -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3{\Omega}cm^2$의 RoA(zero bias resistance area)를 얻을 수 있었다. 절연막 증착조건의 최적화를 통하여, InSb 적외선 소자의 특성이 개선됨을 확인할 수 있었다.

  • PDF

Characterization of InAs Quantum Dots in InGaAsP Quantum Well Grown by MOCVD for 1.55 ${\mu}m$

  • Choe, Jang-Hui;Han, Won-Seok;Song, Jeong-Ho;Lee, Dong-Han
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.134-135
    • /
    • 2011
  • 양자점은 전자와 양공을 3차원으로 속박 시키므로 기존의 bulk나 양자우물보다 양자점을 이용한 레이저 다이오드의 경우 낮은 문턱 전류, 높은 미분이득 및 온도 안전성의 장점이 있을 거라 기대되고 있다. 그러나, 양자점은 낮은 areal coverage 때문에 높은 속박효율을 얻지 못하고 있다. 이러한 양자점의 문제점을 해결하기 위해 양자점을 양자우물 안에 성장시켜 운반자들의 포획을 향상시키는 방법들이 연구되고 있다. 양자우물 안에 양자점을 넣으면 양자우물이 운반자들의 포획을 증가 시키고, 열적 방출도 억제하여 온도 안정성이 향상 되는 것으로 알려져 있다. 광통신 대역의 1.3 ${\mu}m$ 경우, GaAs계를 이용하여 InAs 양자점을 strained InGaAs 박막을 우물층으로 한 dot-in-a-well 구조의 연구는 몇몇 보고된 바 있다. 그러나 InP계를 사용하는 1.55 ${\mu}m$ 대역에서 dot-in-a-well구조의 연구는 아직 미미하다. 본 연구에서는 유기 금속 화학 증착법(metal organic chemical vapor deposition)을 이용하여 InP 기판 위에 InAs 양자점을 자발성장법으로 성장하였으며 dot-in-a-well 구조에서 우물층으로 1.35 ${\mu}m$ 파장의 $In_{0.69}Ga_{0.31}As_{0.67}P_{0.33}$ (1.35Q)를, 장벽층으로는 1.1 ${\mu}m$ 파장의 $In_{0.85}Ga_{0.15}As_{0.32}P_{0.68}$(1.1Q)를 사용하였다. 양자우물층과 장벽층은 모두 InP 기판과 격자가 일치하는 조건으로 성장하였다. III족 원료로는 trimethylindium (TMI)와 trimethylgalium (TMGa)을 사용하였으며 V족 원료 가스로는 $PH_3$ 100%, $AsH_3$ 100%를, carrier gas로는 $H_2$를 사용하였다. InP buffer층의 성장 온도는 640$^{\circ}C$이며 양자점 성장 온도는 520$^{\circ}C$이다. 양자점 형성은 원자력간 현미경(Atomic force microscopy)를 이용하여 확인하였으며, 박막의 결정성은 쌍결정 회절분석(Double crystal x-ray deffractometry)를 이용하여 확인하였다. 확인된 성장 조건을 이용하여 양자점 시료를 성장하였으며 광여기분광법(Photoluminescence)을 이용하여 광특성을 분석하였다. Fig. 1은 dot in a barrier 와 dot-in-a-well 시료의 성장구조이다. Fig. 1(a)는 일반적인 dot-in-a-barrier 구조로 InP buffer층을 성장하고 1.1Q를 100 nm 성장한 후 양자점을 성장하였다. 그 후 1.1Q 100 nm와 InP 100 nm로 capping하였다. Fig. 1(b)는 dot-in-a-well 구조로 InP buffer층을 성장하고 1.1Q를 100 nm 성장 후 1.35Q 우물층을 4 nm 성장하였다. 그 위에 InAs 양자점을 성장하였다. 그 후에 1.35Q 우물층을 4 nm 성장하고 1.1Q 100 nm와 InP 100 nm로 capping하였다. Fig. 2는 dot-in-a-barrier 시료와 dot-in-a-well 시료의 상온 PL data이다. Dot-in-a-barrier 시료의 PL 파장은 1544 nm이며 반치폭은 79.70 meV이다. Dot-in-a-well 시료의 파장은 1546 nm이며 반치폭은 70.80 meV이다. 두 시료의 PL 파장 변화는 없으며, 반치폭은 dot-in-a-well 시료가 8.9 meV 감소하였다. Dot-in-a-well 시료의 PL peak 강도는 57% 증가하였으며 적분강도(integration intensity)는 45%가 증가하였다. PL 데이터에서 높은 에너지의 반치폭 변화는 없으며 낮은 에너지의 반치폭은 8 meV 감소하였다. 적분강도 증가에서 dot-in-a-well 구조가 dot-in-a-barrier 구조보다 전자-양공의 재결합이 증가한다는 것을 알 수 있으며, 반치폭 변화로부터 특히 높은 에너지를 갖는 작은 양자점에서의 재결합이 증가 된 것을 알 수 있다. 이는 양자우물이 장벽보다 전자-양공의 구속력을 증가시키기 때문에 양자점에 전자와 양공의 공급을 증가시키기 때문이다. 따라서 낮은 에너지를 가지는 양자점을 모두 채우고 높은 에너지를 가지는 양자점까지 채우게 되므로, 높은 에너지를 가지는 양자점에서의 전자-양공 재결합이 증가되었기 때문이다. 뿐만 아니라 파장 변화 없이 PL peak 강도와 적분강도가 증가하고 낮은 에너지 쪽의 반치폭이 감소한 것으로부터 에너지가 낮은 양자점보다는 에너지가 높은 양자점에서의 전자-양공 재결합율이 급증하였음을 알 수 있다. 우리는 이와 같은 연구에서 InP계를 이용해 1.55 ${\mu}m$에서도 dot in a well구조를 성장 하여 더 좋은 특성을 낼 수 있으며 앞으로 많은 연구가 필요할 것이라 생각한다.

  • PDF

New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.100-101
    • /
    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

  • PDF

Sputtering방식을 이용한 Indium Thin oxide박막의 넓이에 따른 X-ray 검출기 특성 연구

  • Kim, Dae-Guk;Sin, Jeong-Uk;O, Gyeong-Min;Kim, Seong-Heon;Lee, Yeong-Gyu;Jo, Seong-Ho;Nam, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.321-322
    • /
    • 2012
  • 의료용 방사선 장비는 초기의 아날로그 방식의 필름 및 카세트에서 진보되어 현재는 디지털 방식의 DR (Digital Radiography)이 널리 사용되며 그에 관한 연구개발이 활발히 진행되고 있다. DR은 크게 간접방식과 직접방식의 두 분류로 나눌 수 있는데, 간접방식은 X선을 흡수하면 가시광선으로 전환하는 형광체(Scintillator)를 사용하여 X선을 가시광선으로 전환하고, 이를 Photodiode와 같은 광소자로 전기적 신호로 변환하여 방사선을 검출하는 방식을 말하며, 직접 방식은 X선을 흡수하면 전기적 신호를 발생 시키는 광도전체(Photoconductor)를 사용하여 광도전체 양단 전극에 고전압을 인가한 형태를 취하고 있는 가운데, X선이 조사되면 일차적으로 광도전체 내부에서 전자-전공쌍(Electron-hole pair)이 생성된다. 이들은 광도전체 양단의 인가되어 있는 전기장에 의해 전자는 +극으로, 전공은 -극으로 이동하여 아래에 위치한 Active matrix array을 통해 방사선을 검출하는 방식이다. 본 연구에서는 직접방식 X-ray 검출기에서 활용되는 a-Se을 ITO (Indium Thin oxide) glass 상단에 Thermal evaporation증착을 이용하여 두께 $50{\mu}m$, 33 넓이로 증착 시킨 다음, a-Se상단에 Sputtering증착을 이용하여 ITO를 11 cm, 22 cm, $2.7{\times}2.7cm$ 넓이로 증착시켜 상하부의 ITO를 Electrode로 이용하여 직접방식의 X-ray검출기 샘플을 제작하였다. 제작 과정 중 a-Se의 Thermal evaporation증착 시, 저진공 $310^{-3}_{Torr}$, 고진공 $2.210^{-5}_{Torr}$에서 보트의 가열 온도를 두 번의 스텝으로 나누어 증착 시켰다. 첫 번째 스텝 $250^{\circ}C$, 두 번째 스텝은 $260^{\circ}C$의 조건으로 증착하여 보트 내의 a-Se을 남기지 않고 전량을 소모할 수 있었으며, 스텝간의 온도차를 $10^{\circ}C$로 제어하여 균일한 박막을 형성 할 수 있었다. Sputtering증착 시, 저진공 $2.510^{-3}$, 고진공 $310^{-5}$에서 Ar, $O_2$를 사용하여 100 Sec간 플라즈마를 생성시켜 ITO를 증착하였다. 제작된 방사선 각각의 검출기 샘플 양단의 ITO에 500V의 전압을 인가하고, 진단 방사선 범위의 70 kVp, 100 mA, 0.03 sec 조건으로 X-ray를 조사시켜 ITO넓이에 따른 민감도(Sensitivity)와 암전류(Dark current)를 측정하였다. 측정결과 민감도(Sensitivity)는 X-ray샘플의 두께에 따른 $1V/{\mu}m$ 기준 시, 증착된 ITO의 넓이가 11 cm부터 22 cm, $2.7{\times}2.7cm$까지 각각 $7.610nC/cm^2$, $8.169nC/cm^2$, $6.769nC/cm^2$로 22 cm 넓이의 샘플이 가장 높은 민감도를 나타내었으나, 암전류(Dark current)는 $1.68nA/cm^2$, $3.132nA/cm^2$, $5.117nA/cm^2$로 11 cm 넓이의 샘플이 가장 낮은 값을 나타내었다. 이러한 데이터를 SNR (Signal to Noise Ratio)로 합산 하였을 시 104.359 ($1{\times}1$), 60.376($2{\times}2$), 30.621 ($2.7{\times}2.7$)로 11 cm 샘플이 신호 대 별 가장 우수한 효율을 나타냄을 알 수 있었다. 따라서 ITO박막의 면적이 클수록 민감도는 우수하나 그에 따른 암전류의 증가로 효율이 떨어짐을 검증 할 수 있었으며, 이는 ITO면적이 넓어짐에 따른 저항의 증가로 암전류에 영향을 끼침을 할 수 있었다. 본 연구를 통해 a-Se의 ITO 박막 면적에 따른 전기적 특성을 검증할 수 있었다.

  • PDF

Role of Citrate Synthase in Acetate Utilization and Protection from Stress-Induced Apoptosis

  • Lee, Yong-Joo;Kang, Hong-Yong;Maeng, Pil Jae
    • Proceedings of the Microbiological Society of Korea Conference
    • /
    • 2008.05a
    • /
    • pp.39-41
    • /
    • 2008
  • The yeast Saccharomyces cerevisiae has been shown to contain three isoforms of citrate synthase (CS). The mitochondrial CS, Cit1, catalyzes the first reaction of the TCA cycle, i.e., condensation of acetyl-CoA and oxaloacetate to form citrate [1]. The peroxisomal CS, Cit2, participates in the glyoxylate cycle [2]. The third CS is a minor mitochondrial isofunctional enzyme, Cit3, and related to glycerol metabolism. However, the level of its intracellular activity is low and insufficient for metabolic needs of cells [3]. It has been reported that ${\Delta}cit1$ strain is not able to grow with acetate as a sole carbon source on either rich or minimal medium and that it shows a lag in attaining parental growth rates on nonfermentable carbon sources [2, 4, 5]. Cells of ${\Delta}cit2$, on the other hand, have similar growth phenotype as wild-type on various carbon sources. Thus, the biochemical basis of carbon metabolism in the yeast cells with deletion of CIT1 or CIT2 gene has not been clearly addressed yet. In the present study, we focused our efforts on understanding the function of Cit2 in utilizing $C_2$ carbon sources and then found that ${\Delta}cit1$ cells can grow on minimal medium containing $C_2$ carbon sources, such as acetate. We also analyzed that the characteristics of mutant strains defective in each of the genes encoding the enzymes involved in TCA and glyoxylate cycles and membrane carriers for metabolite transport. Our results suggest that citrate produced by peroxisomal CS can be utilized via glyoxylate cycle, and moreover that the glyoxylate cycle by itself functions as a fully competent metabolic pathway for acetate utilization in S. cerevisiae. We also studied the relationship between Cit1 and apoptosis in S. cerevisiae [6]. In multicellular organisms, apoptosis is a highly regulated process of cell death that allows a cell to self-degrade in order for the body to eliminate potentially threatening or undesired cells, and thus is a crucial event for common defense mechanisms and in development [7]. The process of cellular suicide is also present in unicellular organisms such as yeast Saccharomyces cerevisiae [8]. When unicellular organisms are exposed to harsh conditions, apoptosis may serve as a defense mechanism for the preservation of cell populations through the sacrifice of some members of a population to promote the survival of others [9]. Apoptosis in S. cerevisiae shows some typical features of mammalian apoptosis such as flipping of phosphatidylserine, membrane blebbing, chromatin condensation and margination, and DNA cleavage [10]. Yeast cells with ${\Delta}cit1$ deletion showed a temperature-sensitive growth phenotype, and displayed a rapid loss in viability associated with typical apoptotic hallmarks, i.e., ROS accumulation, nuclear fragmentation, DNA breakage, and phosphatidylserine translocation, when exposed to heat stress. Upon long-term cultivation, ${\Delta}cit1$ cells showed increased potentials for both aging-induced apoptosis and adaptive regrowth. Activation of the metacaspase Yca1 was detected during heat- or aging-induced apoptosis in ${\Delta}cit1$ cells, and accordingly, deletion of YCA1 suppressed the apoptotic phenotype caused by ${\Delta}cit1$ mutation. Cells with ${\Delta}cit1$ deletion showed higher tendency toward glutathione (GSH) depletion and subsequent ROS accumulation than the wild-type, which was rescued by exogenous GSH, glutamate, or glutathione disulfide (GSSG). Beside Cit1, other enzymes of TCA cycle and glutamate dehydrogenases (GDHs) were found to be involved in stress-induced apoptosis. Deletion of the genes encoding the TCA cycle enzymes and one of the three GDHs, Gdh3, caused increased sensitivity to heat stress. These results lead us to conclude that GSH deficiency in ${\Delta}cit1$ cells is caused by an insufficient supply of glutamate necessary for biosynthesis of GSH rather than the depletion of reducing power required for reduction of GSSG to GSH.

  • PDF