• Title/Summary/Keyword: 낸드 플래시 메모리

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The Proposed of the Encryption Method and Designed of the Secure Key Using Initial Bad Block Information Physical Address of NAND Flash Memory (NAND Flash Memory의 초기 Bad Block 정보 물리주소를 이용한 보안키 설계와 암호화 기법 제안)

  • Kim, Seong Ryeol
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.12
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    • pp.2282-2288
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    • 2016
  • Security key generation method by hardware or software related techniques have been variously proposed. This study analyzed the existing security key generation techniques, and propose the design of a new NAND Bad block based security key(NBSK) using a Bad Block information in the NAND flash memory, and propose a new encryption method using the same. Bad Block present in the NAND flash memory is also generated during production and sometimes occur during operations. Initial Bad Block information generated during production is not changed, Bad Block information that may occur during operation has a characteristic that can be changed periodically. This study is designed of the new secure key using initial Bad Block information physical address generated during manufacturing a NAND flash memory, and proposed of the new encryption method. With the proposed key and method can satisfy the general security characteristics, such as the creation and distribution of the secure key authentication and confidentiality and the simplicity of the security key.

An Efficient Resource Optimization Method for Provisioning on Flash Memory-Based Storage (플래시 메모리 기반 저장장치에서 프로비저닝을 위한 효율적인 자원 최적화 기법)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.9 no.4
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    • pp.9-14
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    • 2023
  • Recently, resource optimization research has been actively conducted in enterprises and data centers to manage the rapid growth of big data. In particular, thin provisioning, which allocates a large number of resources compared to fixedly allocated storage resources, has the effect of reducing initial costs, but as the number of resources actually used increases, the cost effectiveness decreases and the management cost for allocating resources increases. In this paper, we propose a technique that divides the physical blocks of flash memory into single-bit cells and multi-bit cells, formats them with a hybrid technique, and manages them by dividing frequently used hot data and infrequently used cold data. The proposed technique has the advantage that the physical and allocated resources are the same, such as thick provisioning, and can be used without additional cost increase, and the underutilized resources can be managed in multi-bit cell blocks, such as thin provisioning, which can allocate more resources than typical storage devices. Finally, we estimated the resource optimization effectiveness of the proposed technique through experiments based on simulations.

A Design of Temperature Management System for Preventing High Temperature Failures on Mobility Dedicated Storage (모빌리티 전용 저장장치의 고온 고장 방지를 위한 온도 관리 시스템 설계)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.10 no.2
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    • pp.125-130
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    • 2024
  • With the rapid growth of mobility technology, the industrial sector is demanding storage devices that can reliably process data from various equipment and sensors in vehicles. NAND flash memory is being utilized as a storage device in mobility environments because it has the advantages of low power and fast data processing speed as well as strong external shock resistance. However, flash memory is characterized by data corruption due to long-term exposure to high temperatures. Therefore, a dedicated system for temperature management is required in mobility environments where high temperature exposure due to weather or external heat sources such as solar radiation is frequent. This paper designs a dedicated temperature management system for managing storage device temperature in a mobility environment. The designed temperature management system is a hybrid of traditional air cooling and water cooling technologies. The cooling method is designed to operate adaptively according to the temperature of the storage device, and it is designed not to operate when the temperature step is low to improve energy efficiency. Finally, experiments were conducted to analyze the temperature difference between each cooling method and different heat dissipation materials, proving that the temperature management policy is effective in maintaining performance.

Performance Analysis of Flash Memory SSD with Non-volatile Cache for Log Storage (비휘발성 캐시를 사용하는 플래시 메모리 SSD의 데이터베이스 로깅 성능 분석)

  • Hong, Dae-Yong;Oh, Gi-Hwan;Kang, Woon-Hak;Lee, Sang-Won
    • Journal of KIISE
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    • v.42 no.1
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    • pp.107-113
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    • 2015
  • In a database system, updates on pages that are made by a transaction should be stored in a secondary storage before the commit is complete. Generic secondary storages have volatile DRAM caches to hide long latency for non-volatile media. However, as logs that are only written to the volatile DRAM cache don't ensure durability, logging latency cannot be hidden. Recently, a flash SSD with capacitor-backed DRAM cache was developed to overcome the shortcoming. Storage devices, like those with a non-volatile cache, will increase transaction throughput because transactions can commit as soon as the logs reach the cache. In this paper, we analyzed performance in terms of transaction throughput when the SSD with capacitor-backed DRAM cache was used as log storage. The transaction throughput can be improved over three times, by committing right after storing the logs to the DRAM cache, rather than to a secondary storage device. Also, we showed that it could acquire over 73% of the ideal logging performance with proper tuning.

WWCLOCK: Page Replacement Algorithm Considering Asymmetric I/O Cost of Flash Memory (WWCLOCK: 플래시 메모리의 비대칭적 입출력 비용을 고려한 페이지 교체 알고리즘)

  • Park, Jun-Seok;Lee, Eun-Ji;Seo, Hyun-Min;Koh, Kern
    • Journal of KIISE:Computing Practices and Letters
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    • v.15 no.12
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    • pp.913-917
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    • 2009
  • Flash memories have asymmetric I/O costs for read and write in terms of latency and energy consumption. However, the ratio of these costs is dependent on the type of storage. Moreover, it is becoming more common to use two flash memories on a system as an internal memory and an external memory card. For this reason, buffer cache replacement algorithms should consider I/O costs of device as well as possibility of reference. This paper presents WWCLOCK(Write-Weighted CLOCK) algorithm which directly uses I/O costs of devices along with recency and frequency of cache blocks to selecting a victim to evict from the buffer cache. WWCLOCK can be used for wide range of storage devices with different I/O cost and for systems that are using two or more memory devices at the same time. In addition to this, it has low time and space complexity comparable to CLOCK algorithm. Trace-driven simulations show that the proposed algorithm reduces the total I/O time compared with LRU by 36.2% on average.

나노 와이어의 직경 변화가 나노 와이어 전계효과 트렌지스터의 전기적 특성에 미치는 효과

  • Jeong, Hyeon-Su;Kim, Tae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.213.2-213.2
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    • 2015
  • 모바일 기기의 성장세로 인해 낸드 플래시 메모리에 대한 수요가 급격히 증가하면서 높은 집적도의 소자에 대한 요구가 커지고 있다. 그러나 기존의 MOSFET 구조의 소자는 비례 축소에 의한 게이트 누설 전류, 셀간 간섭, 단 채널 효과 같은 여러 어려움에 직면해 있다. 특히 트윈 실리콘 나노 와이어 전계 효과 트랜지스터 (TSNWFETs)는 소자의 크기를 줄이기 쉬우며 게이트 비례 축소가 용이하여 차세대 메모리 소자로 각광받고 있다. 그러나 TSNWFETs의 공정 방법과 실험적인 전기적 특성에 대한 연구는 많이 이루어 졌지만, TSNWFETs의 전기적 특성에 대한 이론적인 연구는 많이 진행되지 않았다. 본 연구는 직경의 크기가 다른 나노 와이어를 사용한 TSNWFETs의 전기적 특성에 대해 이론적으로 계산하였다. TSNWFETs과 실리콘 나노 와이어를 사용하지 않은 전계 효과 트랜지스터(FET)를 3차원 시뮬레이션 툴을 이용하여 계산하였다. TSNWFETs와 FETs의 드레인 전류와 문턱전압 이하 기울기, 드레인에 유기된 장벽의 감소 값, 게이트에 유기된 드레인 누설 전류 값을 이용하여 전류-전압 특성을 계산하였다. 이론적인 결과를 분석하여 TSNWFETs의 스위칭 특성과 단 채널 효과를 최소화하는 특성 및 전류 밀도를 볼 수 있었으며, 나노 와이어의 직경이 감소하면 증가하는 드레인에 유기된 장벽의 감소를 볼 수 있었다.

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안전현장 스케치 - SK 하이닉스 최첨단 안전관리시스템 기반으로 반도체 선두기업 도약

  • Yeon, Seul-Gi
    • The Safety technology
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    • no.182
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    • pp.24-26
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    • 2013
  • SK하이닉스는 PC, 모바일 등 각종 IT기기의 필수부품인 D램과 낸드플래시 등 메모리반도체를 비롯해 CIS와 같은 시스템반도체 등을 생산하는 기업이다. 1984년 국내 최초로 16Kb S램을 시험 생산한 이래, 세계 최초 최소 최고속 최저전압의 혁신적인 제품을 연이어 시장에 선보이며 이제는 반도체업계의 선두기업 반열에 당당히 올라섰다. 세계 메모리반도체 2위, 세계 최대 반도체 시장인 중국 등 신흥시장에서 D램 부문 1위 등이 그 증거다. 우리 식탁의 기본인 쌀처럼 반도체는 IT산업의 핵심으로 꼽힌다. 더불어 반도체는 단순한 부품을 넘어 이제 IT제품의 성능을 구분 짓는 잣대로까지 평가받고 있다. 때문에 고품질의 반도체를 생산하기 위한 이곳 임직원들의 열정과 노력은 상당하다. 환경안전 관리는 바로 이런 노력을 뒷받침하는 주축이다. 이런 신념에 따라 이곳은 쾌적한 근무환경 조성에 매진하는 한편 안전을 최우선으로 하여 모든 작업을 진행하고 있다. 반도체분야 최정상 기업의 지리를 유지하기 위해 환경안전관리에 매진하고 있는 SK하이닉스 이천 본사를 찾아가봤다.

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The Analysis of Efficient Disk Buffer Management Policies to Develop Undesignated Cultural Heritage Management and Real-time Theft Chase (실시간 비지정 문화재 관리 및 도난 추적 시스템 개발을 위한 효율적인 디스크 버퍼 관리 정책 분석)

  • Jun-Hyeong Choi;Sang-Ho Hwang;SeungMan Chun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.18 no.6
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    • pp.1299-1306
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    • 2023
  • In this paper, we present a system for undesignated cultural heritage management and real-time theft chase, which uses flash-based large-capacity storage. The proposed system is composed of 3 parts, such as a cultural management device, a flash-based server, and a monitoring service for managing cultural heritages and chasing thefts using IoT technologies. However flash-based storage needs methods to overcome the limited lifespan. Therefore, in this paper, we present a system, which uses the disk buffer in flash-based storage to overcome the disadvantage, and evaluate the system performance in various environments. In our experiments, LRU policy shows the number of direct writes in the flash-based storage by 10.7% on average compared with CLOCK and FCFS.

A Study on the Performance Measurement and Analysis on the Virtual Memory based FTL Policy through the Changing Map Data Resource (멥 데이터 자원 변화를 통한 가상 메모리 기반 FTL 정책의 성능 측정 및 분석 연구)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.9 no.1
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    • pp.71-76
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    • 2023
  • Recently, in order to store and manage big data, research and development of a high-performance storage system capable of stably accessing large data have been actively conducted. In particular, storage systems in data centers and enterprise environments use large amounts of SSD (solid state disk) to manage large amounts of data. In general, SSD uses FTL(flash transfer layer) to hide the characteristics of NAND flash memory, which is a medium, and to efficiently manage data. However, FTL's algorithm has a limitation in using DRAM more to manage the location information of NAND where data is stored as the capacity of SSD increases. Therefore, this paper introduces FTL policies that apply virtual memory to reduce DRAM resources used in FTL. The virtual memory-based FTL policy proposed in this paper manages the map data by using LRU (least recently used) policy to load the mapping information of the recently used data into the DRAM space and store the previously used information in NAND. Finally, through experiments, performance and resource usage consumed during data write processing of virtual memory-based FTL and general FTL are measured and analyzed.

In-Time Cache Eviction To Reduce Inefficient SSD Garbage Collection (SSD 가비지 콜렉션 비용을 줄이는 효율적인 적시 캐시 방출 기법)

  • Kim, Kyung-Min;Ha, Rhan
    • Proceedings of the Korean Information Science Society Conference
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    • 2012.06a
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    • pp.349-351
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    • 2012
  • 낸드 플래시 메모리에서 가비지 콜렉션은 블록의 유효한 데이터들을 새로운 블록으로 옮기고 오래된 블록을 지우는 과정이다. 가비지 콜렉션에 의해 옮겨지는 페이지들은 작업의 양과 형태에 따라 오랫동안 유효한 페이지로 존재하기도 하고 그렇지 않은 경우도 있다. 본 논문에서는 반도체 디스크(Solid State Drive, 이하 SSD)에서 가비지 콜렉션이 비효율적으로 일어나는 경우를 정의하고 비효율적 가비지 콜렉션 과정으로 인한 비용을 줄이는 캐시 방출 기법을 소개한다. 이 기법을 시뮬레이션 해본 결과 작업 형태가 순차적일 때 LRU 캐시 알고리즘과 같이 사용되면 가비지 콜렉션에 의해 옮겨지는 페이지를 12%, 전체 쓰기 연산 횟수를 9%까지 줄일 수 있었고 블록 단위 LRU 알고리즘과 사용했을 때도 보다 좋은 성능을 보였다.