• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.99.1-99.1
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• 2000

• Composites Research
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• v.15 no.1
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• pp.32-40
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• 2002

This study developed fabrication process of $SiC_p/Al$ metal matrix composites as electronic packaging materials by squeeze casting method. The $SiC_p$ preform were fabricated in newly designed preform mold using about 0.8 % of inorganic binder(SiO$_2$) and 5 vol.% of $Al_2O_3$fiber. To infiltrate the molten metal into the preform, fabrication condition such as the temperature and the pressure were selected. Applying the fabrication conditions, heat transfer analysis were preformed using finite element method and thus analyzed the temperature distribution and cooling characteristic during the squeeze casting. For the fabricated composites, impact toughness and thermal expansion coefficient were measured. The metal matrix composites developed in this study have 0.2~0.3 J impact toughness, $8~10 ppm/^{\circ}C$ thermal expansion coefficient and $2.9~3.0g/cm^3$density which is appropriate properties for electronic packaging application.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.166.2-166.2
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• 2016

최근 생산 장비의 발달로 인해 절삭공구, 전기전자 부품, 항공 및 자동차 부품 생산에 필요한 생산 장비의 수명연장, 고속 절단 및 고성능화가 중요시 되면서 우수한 내구성, 내마모성 및 고온 안정성을 갖는 기계부품 및 공구를 요구하게 되었다. 내마모성을 가지는 표면을 얻기 위해서는 TiN, TiC, AlN, Al2O3, CrN, ZrO2와 같은 경도 높은 물질을 증착하여 특성을 개선시키는 방법이 있다. 특히 AlN은 비교적 우수한 경도와 고온 안정성을 가지고 있어, 생산 장비의 고속 절단 및 반복되는 정밀 작업으로 인한 열충격과 마모를 완화시키는 역할을 하는 코팅재로 사용하기 적합하다. 본 실험에서는 RF-magnetron sputtering 방법을 이용하여 AlN 박막을 파워 150W, 질소가스 분압비에 따라 25%, 50%, 75%, 100%의 조건으로 금속기판 위에 증착하였다. 금속 기판 위에 제작된 AlN막은 XRD (X-ray Diffraction)을 사용하여 배향성을 확인하였고, HM-220 (Micro-vickers hardness tester)을 사용하여 AlN박막의 경도를 측정하였으며, SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope)을 이용하여 표면의 구조와 거칠기를 측정하였다. 이 실험을 통하여 우수한 물성과, 치밀한 조직의 AlN박막이 고속 절삭 공구, 유공압 실린더, 베어링과 같은 금속부품의 코팅소재로 적용가능 할 것으로 기대된다.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1043.1-1048
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• 1996

알루미나 매트릭스 복합재료를 AIZnMg(7075)-합금의 직접적인 용융산화를 통하여 제조하였다. 충전재료는 17$\mu\textrm{m}$ 크기의 모서리가 둥근 연마재용 SiC 입자를 사용하였다. 산화촉진재 SiO2를 사용한 경우와 사용하지 않은 경우를 비교하였다. 매트릭스 형성 매카니즘과 반응거동을 온도와 SiO2사용량을 중심으로 연구하였으며, 얻어진 AI2O3/SiC/금속 복합재료의 미세구조를 관찰하였다.

• Korean Journal of Materials Research
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• v.3 no.3
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• pp.282-291
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• 1993

Joining ${Al}_{2}{O}_{3}$ and STS 304 stainless steel by active metal brazing method with using CuI Owt % Ti and Cu -7 .5wt % Zr insert metal, their interfaces were analyzed and strength of the joint brazed with Cu-7.5wt % Zr insert metal also investigated with shear strength testing method. In brazing with Cu-lOwt% Ti insert metal, the single reaction layer was formed by the reaction with Ti and ${Al}_{2}{O}_{3}$ at the interface between ${Al}_{2}{O}_{3}$ and insert metal, but the double reaction layer was found in brazing with Cu-7.5wt % Zr insert metal because of the difference of their wettability on the surface of ${Al}_{2}{O}_{3}$. Fracture shear strength about 86MPa was obtained from ${Al}_{2}{O}_{3}$/Cu-7.5wt% Zr/STS 304 stainless steel joint and reasonable strength of the joints is attributed to the formation of double reaction layer at the interface.

• Journal of Power System Engineering
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• v.3 no.2
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• pp.57-63
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• 1999

The fabrication of $Al_2O_3/Al$ composites by pressureless infiltration technique was made to investigate the effects of processing variables such as content of Mg, processing temperature and time on the infiltration behavior of molten Al and microstructure. When the pure Al was infiltrated into mixtures of Mg and $Al_2O_3$ powder, processing temperature required to spontaneous infiltration was decreased and critical processing temperature and Mg content were $700^{\circ}C$ and 3wt% respectively. The content of Mg was found the most powerful variable for infiltration of molten Al. The infiltration ratio increased with Mg content and processing temperature, however the $Al_2O_3/Al$ composites which were fabricated by high Mg content and processing temperature resulted in non uniform dispersion of $Al_2O_3$ particles by excessive interfacial reaction. XRD pattern indicated that $MgAl_2O_4$ and AIN was observed at the interface of $Al_2O_3$ particles and in the Al matrix as reaction products.

• Journal of the Korean Ceramic Society
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• v.25 no.2
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• pp.136-142
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• 1988

β-Al2O3, which is used for solid electrolyte membrances in sodium-sulfur batteries, was prepared by sol-gel process. Sodium-n-propoxide NaOC3H7 and aluminum-isopropoxide Al(OC3H7)3 were hydrolyzated in the solution at pH 3, pH 7, pH 9 and pH 11, respectively. The sol-gel processed samples were calcined at several temperature steps, respectively and analysed by thermal analyser(DT-TGA), infrared spectrum analyser and X-ray diffraction analyser. The gelling rate of solution at pH 7 was much higher than that of the solution at pH 3. Thermal exchanging behavior of the gels at pH 3 were similar to Na2O·Al2O3·6H2O and, above pH 7, were similar to Na2O·Al2O3·3H2O. When samples' composition ratio was 9.13 : 90.87 [NaOC3H7:Al(OC3H7)3] at pH 7, β-Al2O3 was formed at 1100℃.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.592-598
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• 1998

AZO(Aluminum doped Zinc Oxide) thin films were fabricated by reactive DC magnetron sputtering method using zinc metal target (Al 2%) and zinc oxide target ($Al_2O_3\;2%$) respectively. The intermediate condition with optimum transmittance and conductivity was obtained by controlling the sputtering parameters. Oxygen gas ratio for this condition was $0.5{\times}10^{-2}~1.0{\times}10^{-2}$ in oxide target and. In case of metal target, this optimum oxygen gas ratio at the applied power of 0.6 kW and 1.0 kW was 0.215~0.227 and 0.305~0.315, respectively. The resistivity of AZO film deposited was obtained $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}$cm as deposited state regardless of target species.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.73-73
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• 2009

트렌지스터의 채널 길이가 줄어듦에 따라 절연층으로 쓰이는 $SiO_2$의 두께는 얇아져야 한다. 이에 따라 얇아진 절연층에서 터널링이 발생하여 누설전류가 증가하게 되어 소자의 오동작을 유발한다. 절연층에서의 터널링을 줄여주기 위해서는 High-K와 같은 유전율이 높은 물질을 이용하여 절연층의 두께를 높여주어야 한다. 최근에 각광 받고 있는 High-K의 대표적인 물질은 $HfO_2$, $ZrO_2$와 $Al_2O_3$등이 있다. $HfO_2$, $ZrO_2$와 $Al_2O_3$는 $SiO_2$보다 유전상 수는 높지만 밴드갭 에너지, 열역학적 안정성, 재결정 온도와 같은 특성 면에서 $SiO_2$를 완전히 대체하기는 어려운 실정이다. 최근 연구에 따르면 기존의 High-K물질에 금속을 첨가한 금속산화물의 경우 밴드갭 에너지, 열역학적 안정성, 재결정 온도의 특성이 향상되었다는 결과가 있다. 이 금속 산화물 중 $HfAlO_3$가 대표적이다. $HfAlO_3$는 유전상수 18.2, 밴드캡 에너지 6.5 eV, 재결정 온도 $900\;^{\circ}C$이고 열역학적 안전성이 개선되었다. 게이트 절연층으로 사용될 수 있는 $HfAlO_3$는 전극과 기판사이에 적층구조를 이루고 있어, 이방성 식각인 건식 식각에 대한 연구가 필요하다. 본 연구는 $BCl_3$/Ar 유도결합 플라즈마를 이용하여 $HfAlO_3$ 박막의 식각 특성을 알아보았다. RF Power 700 W, DC-bias -150 V, 공정압력 15 mTorr, 기판온도 $40\;^{\circ}C$를 기본 조건으로 하여, $BCl_3$/Ar 가스비율, RF Power, DC-bias 전압, 공정압력에 의한 식각율 조건과 마스크물질과의 선택비를 알아보았다. 플라즈마 분석은 Optical 이용하여 진행하였고, 식각 후 표면의 화학적 구조는 X-ray Photoelectron Spectroscoopy(XPS) 분석을 통하여 알아보았다.

• Korean Journal of Metals and Materials
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• v.48 no.3
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• pp.256-261
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• 2010

In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.