• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.439-445
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• 2007

SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits. In this paper, we investigate the causes that generate the resistance nonuniformity after the silicon-based thin film resistor was fabricated, and consider the counter plan against that. Because the Ti-B precipitate, which formed during the silicide process of the SiGe thin film resistor, gives rise to the nonuniformity of SiGe resistors, the boron ions should be implanted as many as possible. In addition, the resistance deviation increases as the size of the contact hole that interconnects the SiGe resistor and the metal line decreases. Therefore, the size of the contact hole must be enlarged in order to reduce the resistance deviation.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.5
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• pp.154-161
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• 2009

Recently, as many functional blocks are integrated on a small area the high speed integrated circuits emerge as a critical electromagnetic interferer which causes mal-function of adjacent circuitries and lowers the sensitivity of the wireless receivers. Therefore, it is necessary to devise an precise analyzing tool to pinpoint the major electromagnetic noise contributor among the internal circuit blocks of high speed IC's. This paper presents the design, fabrication, and measurement results of the high resolution magnetic field probe which can measure the current density on the IC surface. In order to achieve the high resolution, the magnetic field probe is fabricated using 3-metal semiconductor process so that its thickness is reduced by 10% than that of conventional works. Through the magnetostatic analysis and EM simulation, spatial resolution and sensitivity to the nonmagnetic field components are analyzed. Experimentally, it is found that the fabricated probe can measure the current density on the IC surface with $210{\mu}m$-spatial-resolution.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.95-99
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• 2008

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. We investigated the electrolyte effects of the electroplating solution in the resistivity value of Cu films grown by electroplating deposition (EPD). The resistivity was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the electrolyte condition plays an Important role in formation of Cu film with lower resistivity by EPD.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.977-981
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• 1998

Controlling the wafer temperatures from 200 to$500^{\circ}C$, low resistive tungsten thin films used for VLSI metallization are deposited by PECVD method. Resistivities of plasma deposited tungsten thin films are very sensitive to the $H_2/WF_6 $ partial pressure ratios. Residual stress behaviors of the films as a function of plasma power density were also studied. At the power density under the $0.7W/\textrm{cm}^2$, residual stress of W film is about $2.4\times10^9dyne/\textrm{cm}^2$. When the power density is. however, increased from 1.8 to $2.7W/\textrm{cm}^2$, residual stress is suddenly increased from $8.1\times10^9$ to $1.24\times10^{10}dyne/\textrm{cm}^2$ ue to the ion or radical bombardment at high power density.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.315-316
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• 2012

반도체와 금속배선의 확산을 방지하기 위한 확산방지막의 필요성이 대두되고 있으며, 이에 대한 연구는 많은 연구 그룹에서 진행중에 있다. 하지만 이러한 연구의 대부분은 전기적, 결정학적 특성에 대하여 안전성 및 재료학적 연구에 국한되어 진행되어졌다. 본 연구그룹은 텅스텐(W)을 질화시킨 W-N 확산방지막에 대하여 연구를 진행하였고, 역시 결정학적 특성에 대한 열적인 안전성을 주로 연구하였으나, 본 연구에서는 W-N 박막의 나노영역에 대한 기계적 특성 평가에 주안점을 두어 W-N 박막의 stress를 nano-indenter 기법을 이용하여 측정하고자하였다. 특히 공정시간의 단축 효과 등의 이유로 박막의 두께를 감소시키는 현재 추세에 맞춰 더 얇은 W-N 확산방지막을 제작하였으며, 이에 대한 분석을 실시하였다. W-N 확산방지막은 Ar(Argonne), $N_2$ (nitrogen) 총유량을 40 sccm으로 고정하여, 질소 유입 조건을 0, 0.5, 1 sccm 으로 변화시켜 Si (silicon) (100) 기판 위에 rf (radio-frequency) magnetron sputter를 이용하여 증착하였다. 이때 W-N 박막의 두께를 30, 100 nm로 달리하여 증착하였으며, 증착된 박막은 질소 분위기 $600^{\circ}C$에서 30분간 열처리하였다. 증착된 시료는 nano-indent를 통하여 표면으로부터 10 nm 부근의 극 표면 물성을 측정하였다. 측정 결과, $N_2$ 가스의 유량을 0.5 sccm 흘려주면서 증착한 W-N 박막이 $N_2$가스를 흘려주지 않은 W 박막과 비교하여 압축응력을 덜 받아 비교적 열에 대하여 안정적임을 확인하였다. 또 30 nm 두께의 W-N 박막이 100 nm 두께의 W-N 박막보다 더 기계적으로 안정적인 상태임을 확인하였다.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.450-455
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• 2000

For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.30-30
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• 2018

스마트 도금공장을 구축하기 위해서는 도금액 내부의 화학 물질 농도 변화를 측정할 수 있는 화학 센서 기술이 필수적으로 요구된다. 와트욕은 대표적인 고속 니켈 도금액 중 하나로 기본적으로 황산니켈, 염화니켈, 보릭산의 염과 함께 케리어(type-1 광택제), 광택제(type 2-광택제), 응력 제어제 등의 유기 첨가제로 구성되어 있다. 이러한 유기 첨가제는 전차된 니켈층의 두께 균일도, 조도, 미세 구조, 내부 응력 등 다양한 특성을 제어하며, 정밀한 농도 관리가 필수적으로 요구되나, 분석 기술의 부재로 인하여 지금까지도 대부분의 액관리는 할셀법이나 작업자의 경험에 의존하고 있다. Cyclic voltammetry stripping(CVS) 방법은 전기화학 분석 과정에서 나타나는 첨가제의 가속, 감속 특성 등과 여기에 수반되는 stripping peak의 변화를 이용하여 개별 첨가제의 농도를 측정하는 방법이며, 지금까지 인쇄회로기판의 비아필 공정, 전해 동박 제조, 반도체 배선 등 구리도금 산업 전반에 걸쳐 첨가제 관리에 효과적으로 적용되고 있다. 그러나 수소 발생으로 인한 stripping 효율 문제로 인하여 니켈, 주석, 아연 등 표준 환원 전위가 높은 금속 도금액 내부 첨가제 농도 측정은 아직 어려운 상황이다. 본 연구에서는 이 문제를 극복하기 위해 염소를 과량 첨가한 구리 도금액을 CVS 분석의 base 용액으로 이용하여 니켈 도금액 내부 여러 광택제 (polyetylene glycol(PEG) 계열, thiourea 계열, 2-butyne-1,4-diol 등) 농도를 측정하는 법을 제시하였다. 제시된 방법은 CVS 분석 과정에서 구리-염소 사이의 상호 작용으로 인해 생성되는 3가지 stripping peak의 상대적인 크기 변화가 첨가제 농도에 따라 영향을 받는다는 사실에 기반하였다. 본 연구에서는 여기에 관한 원인에 대해 고찰하였으며, 제시된 방법을 통해 광택제 계열 첨가제 농도 측정을 선택적으로 할 수 있다는 것을 증명하였다.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.500-505
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• 1997

Experimental amorphous photodiode is fabricated on CMOS IC using a-Si:H p-i-n structure. Amorphous photodiode is scuccessfully integrated on CMOS IC using amorphous Si produced by PECVD system. The PECVD system can deposit a-Si:H at low temperature so that photodiode can be integrated with CMOS IC structure without any process incompatibility. The fabricated amorphous photodiode has a breakdown voltage of below -20 V, a leakage current of about 1 $\mu\textrm{A}$, and turn-on voltage of 0.6~0.8 V. It is demonstrated that the photocurrent of optical signal can be turned on and off by a small voltage and the fabricated amorphous p-i-n photodiode can be used as an optical switch.

• Journal of the Korean Society of Propulsion Engineers
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• v.2 no.3
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• pp.1-9
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• 1998

The exhaustion of fossil fuels and serious environmental pollution put the concern about non-po llution energy into the world. On the developments of technology, wind energy has been spotlighted as a non-pollution energy in many countries. This study has carried out the aerodynamic and structural design procedure of the lightweight composite rotor blades with an appropriate aerodynamic performance and structural strength for the 500㎾ medium class wind turbine system. The previous design, which is shell-spar structure, is redesigned to shell-spar- sandwich structure for light weight. Large deformation problem from light weight is examined by non-linear analysis. Local buckling occurred under lower stress than failure stress. The buckling analysis is accomplished to confirm the safety of the composite blade. The stress analysis around pin hole joint part at hub is carried out and it is confirmed that the pin hole is not failed. The results show that the resonance of redesigned blade does not happen in operation range.