• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.82-83
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.49-49
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.169-169
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.69-69
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• 1997

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.145-146
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• 1997

수소화된 비정질 규소(a-Si:H)는 전자소자에서 광범위하게 사용되고 있다. 하지만 a-Si:H는 반송자 이동도가 느리고 불안정하기 때문에 그 특성개선이 요구되어진다. 본 논문은 금속기판 Mo위에 a-Si:H를 성장하고 후속 결정화 연구를 수행하였다. a-Si:H 박막은 DC 글로우 방전으로 Mo 기판위에 증착되었다. 실험에 사용되어진 열처리로는 질소분위기, 진공상태, 급속가열 및 엑시머레이저 열처리를 행하였다. 열처리 온도는 10$0^{\circ}C$에서 120$0^{\circ}C$까지 행하였다. 엑시머레이저의 에너지는 단위 펄스당 90에서 340mJ이였다. 결정화에 영향을 주는 요소로는 불순물 주입, 온도, 박막의 두께 및 열처리 시간등을 조사하였다. 불순물이 주입된 비정질규소는 진성규소보다 더 좋은 결정화를 보였다. 불순물 주입은 낮은 온도에서의 결정화에 도움을 주었다. 열처리 시간은 결정화에 큰 영향을 미치지 못하였다. 반면에 열처리 온도는 결정화에 큰 영향을 주었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.205-205
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• 2003

우리나라에서는 많은 양의 폐분진이 발생하며 경남지역에서는 연간 3만톤의 폐분진이 발생한다. 매년 폐기물의 발생량은 증가하고 있으며 폐분진류의 주성분은 실리카와 알루미나가 주성분을 이룬다. 특히 주조, 제강 등 금속공업에서 발생하는 분진은 입자가 미세한 다량의 실리카와 알루미나로 이루어져 있어 탄화규소(SiC) 및 알루미나-탄화규소-탄소(A1$_2$O$_3$-SiC-C)계 내화물 제조에 분쇄공정 없이 세라믹스의 원료로 활용할 수 있다. 현재 알루미나-탄화규소-탄소(Al$_2$O$_3$-SiC-C)계 내화물 제조를 위해 제조공정이 간단한 연소합성법을 이용하지만 분말제조 공정 중 분위기 조절에 많은 비용이 요구되고 있어 시급한 대안이 필요한 상태이다.

• Korean Journal of Materials Research
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• v.7 no.3
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• pp.224-228
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• 1997

Rolling contact fatigue tests were performed for two types silicon nitrides using disk- type specimens. Materials showed a fatigue behaviour similar to that typically found in metallic materials From the fractographic and metallographic observations, it has been found that the crack initation in the silicon nitrides subjected to rolling contact fatigue is to be induced by cyclic subsurface shear stress, as is known in steel bearing. On the mid-sections of the specimens, many subsurface cracks which lay parallel to the contact surface can be found at a depth where fluctuation of the Herzian shear stress was the maximum.

• Resources Recycling
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• v.30 no.5
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• pp.25-31
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• 2021

Smelting reduction of spent lithium-ion batteries results in the production of metallic alloys in which reduced cobalt, nickel and copper coexist. In this study, we investigated the leaching of the metallic alloys containing the above three metals together with iron, manganese, and silicon. The mixture of hydrochloric acid and hydrogen peroxide as an oxidizing agent was employed, and the effect of the concentration thereof, the reaction time and temperature, and pulp density was investigated to accomplish the complete leaching of cobalt, nickel, and copper. The effect of the hydrogen peroxide concentration and pulp density on the leaching was prominent, compared to that of reaction time and temperature, especially in the range of 20 to 80℃. The complete leaching of the metals present in metallic alloys, except silicon, was accomplished using 2 M HCl and 5% H₂O₂ with a pulp density of 30 g/L for 150 min at 60℃.

• Analytical Science and Technology
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• v.24 no.2
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• pp.105-112
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• 2011

Syntheses and property analysis of hydropolysilanes were studied. Those hydropolysilanes can be utilized as precursors for amorphous silicon and polycrystallline silicon for the purpose of the solar cell and the thin film transister for the next generation's semiconductors. Most important characteristics of this study are to find optimized conditions for the synthesis and property analysis of soluble hydropolysilanes. Also the possibility of pyrolytic conversion to amorphous and polycrystalline silicon was investigated.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.29-33
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• 2003

Material and electrical properties of copper-based ohmic contacts on n-type 4H-SiC were investigated for the effects of the post-annealing and the metal covering conditions. The ohmic contacts were prepared by sequential sputtering of Cu and Si layers on SiC substrate. The post-annealing treatment was performed using RTP (rapid thermal process) in vacuum and reduction ambient. The specific contact resistivity ($p_{c}$), sheet resistance ($R_{s}$), contact resistance ($R_{c}$), transfer length ($L_{T}$), were calculated from resistance (RT) versus contact spacing (d) measurements obtained from TLM (transmission line method) structure. The best result of the specific contact resistivity was obtained for the sample annealed in the reduction ambient as $p_{c}= 1.0 \times 10^{-6}\Omega \textrm{cm}^2$. The material properties of the copper contacts were also examined by using XRD. The results showed that copper silicide was formed on SiC as a result of intermixing Cu and Si layer.