• Journal of the Institute of Convergence Signal Processing
• /
• v.4 no.1
• /
• pp.41-48
• /
• 2003

In this paper, a new equivalent circuit for a defected ground structure(DGS) is proposed and adapted to design of a power amplifier for performance improvement. The DGS equivalent circuit presented in this paper consists of parallel LC resonator and parallel capacitance to describe the fringing fields due to the etched defects on the metallic ground plane, and also is used to optimize the matching circuit of a power amplifier. A previous research has also used a DGS for harmonic rejection and efficiency improvement of a power amplifier(1), however, there was no exact equivalent circuit analysis. In this paper, we suggest a novel design method and show the performance improvement of a class AB power amplifier by using the equivalent circuit of a DGS applied to output matching circuit. The design method presented in this paper can provide very accurate design results to satisfy the optimum load condition and the desirable harmonic rejection, simultaneously. As a design example, we have designed a 20W power amplifier with and without circuit simulation of DGS, and compared the measurement results.

• Applied Microscopy
• /
• v.33 no.1
• /
• pp.17-23
• /
• 2003

Indium oxide ($In_2O_3$) nanowires were successfully synthesized by a simple reaction in a wet oxidizing environment at low temperature without metal catalyst. The nanowires were characterized by an x-ray diffraction (XRD), a scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS), and a transmission electron microscopy (TEM). It was shown that the $In_2O_3$ nanowires were two types of morphology, uniform nanowires and nanowires containing $In_2O_3$ nanoparticles in its stem. It was found that lengths of the nanowires were ranges of several micrometers and their diameters were around $10{\sim}250$ nm. The growth direction of the nanowires was investigated and their growth mechanism is also discussed.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.38 no.4
• /
• pp.409-417
• /
• 2014

To prevent the occurrence of fractures in metal structures, it is very important to evaluate the 3D crack growth process in those structures and any related parts. In this study, tension tests and two simulations, namely, Simulation-I and Simulation-II, were performed using XFEM to evaluate crack growth in three dimensions. In the tension test, Mode I crack growth was observed for a notched metal specimen. In Simulation-I, a 3D reconstructed model of the specimen was created using CT images of the specimen. Using this model, an FE model was constructed, and crack growth was simulated using XFEM. In Simulation-II, an ideal notch FE model of the same geometric size as the actual specimen was created and then used for simulation. Obtained crack growth simulation results were then compared. Crack growth in the metal specimen was evaluated in three dimensions. It was shown that modeling the real shape of a structure with a crack may be essential for accurately evaluating 3D crack growth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.325-325
• /
• 2012

1차원구속 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si (111) 기판 위에 GaAs NWs 와 InAs NWs를 촉매를 이용하지 않고 성장 하였다. vapour-liquid-solid (VLS)방법으로 성장하는 GaAs NWs는 Ga의 droplet을 이용하게 되는데 Ga이 Si 기판위에 자연 산화막에 존재하는 핀홀(pinhole)로 이동하여 1차적으로 Ga droplet 형성하고 이후 공급되는 Ga과 As은 SiO2 보다 GaAs와 sticking coefficient 가 좋기 때문에 Ga drolept을 중심으로 빠른 선택적 성장을 하게 되면서 NWs로 성장을 하게 된다. 반면에 InAs NWs를 성장 할 시에 droplet 방법으로 성장을 하게 되면 NWs가 아닌 박막 형태로 성장을 하게 되는데 이것으로 InAs과 GaAs의 $SiO_2$와의 sticking coefficient 의 차이를 추측을 할 수 있다. InAs NWs는 GaAs NWs는 달리 native oxide를 이용하지 않고 InAs 과 Si 사이의 11.5%의 큰 lattice mismatch를 이용한다. 이종의 epitaxy 방법에는 크게 3종류 (Frank-van der Merwe mode, Stranski-Krastanov mode, Volmer-Weber mode)가 있는데 각기 다른 adatom 과 surface의 adhesive force로 나누어지게 된다. 이 중 Volmer-Weber mode epitaxy는 adatom 의 cohesive force가 surface와의 adhesive force보다 큰 경우 성장 되는 방식으로 InAs NWs 는 이 방식을 이용한다. 즉 droplet을 이용하지 않는 vapour-solid (VS) 방법으로 성장을 하였다. 이 때 In 의 migration을 억제하기 위해서 VLS mode 의 GaAs NWs 보다 As의 공급을 10배 이상 하였다. FE-SEM 분석 결과 GaAs NWs는 Ga droplet을 확인 할 수 있었고 InAs NWs는 droplet이 존재하지 않았다. GaAs와 InAs NW는 density와 length가 V/III가 높을수록 증가 하였다.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2003.11a
• /
• pp.109-116
• /
• 2003

The amount of radioactive waste is expected to be increased continuously because of the rapid growth of the domestic nuclear industry, full power operation of the HANARO reactor and the increased research activities of the nuclear fuel cycle. Accordingly the efforts are focused to achieve the handling of radioactive waste in safe and reduce the volume of radioactive waste. The PIEF is carrying out the PIE (post irradiation examination) of spent fuel rods related to the identification of cause defect and evaluation of integration safety. This study describes the technologies and experiences of compaction, shredding and cutting of the solid radioactive waste used in the PIE. The quantity of the high level waste was reduced by 1/12 using the 100-ton compressor installed in hot-cell. Also middle and low level waste was reduced by 1/8 using the 60-ton compressor installed in intervention area. Plastic drums were shredded by crusher to be compacted in the ratio of 1/5, used filters in the ratio of 1/6 and the number of drum is also reduced by cutting procedure for the non-volatile materials such as metal.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.93.2-93.2
• /
• 2018

최근 기후 변화 문제로 $CO_2$배출량 억제 정책에 따라 열전재료가 다양한 분야에 크게 주목 받고 있다. 열전 모듈은 전류를 흘려 온도차를 발생시키는 펠티어 효과와 온도차를 전력으로 변환하는 제백 효과를 이용한다. 열전발전용에 적용되는 상용 열전모듈의 경우, 열전소자의 접합부의 수는 수십 개 이상이다. 따라서 단 한 개의 접합 불량 열전소자가 모듈 전체의 열전성능에 큰 영향을 미친다. 현재 상용화 된 Bi-Te계 열전 모듈은 Bi-Te의 Te와 Sn계 솔더의 주성분인 Sn이 $250^{\circ}C$ 부근에서 취성의 Sn-Te계 금속 화합물을 형성한다고 알려져 있다. 이 때 생성된 Sn-Te 화합물은 열전모듈의 접합강도를 약화시키고 이로 인해 열전모듈의 접합 신뢰성을 크게 저하 시킬 수 있다. 이를 해결하기 위해 솔더와 소자 사이에 확산방지층이 적용되고 있으며, 이 중에서 니켈합금이 가장 널리 적용되고 있다. 니켈층을 형성시키는 방법 중에서, 무전해 도금법은 간단하게 열전소자 표면 위에 도금 층을 균일한 두께로 만들어 낼 수 있다. 하지만, 니켈 도금층과 Bi-Te 소자 간에 화학적 결함이 존재하지 않기 때문에, 무전해 니켈 도금층의 밀착성이 떨어진다. 이 때. 소자 표면에 거칠기 효과(anchor effect)를 부여하기 위해 물리적 샌딩법을 사용하는데 이 방법의 경우 소자에 크랙 같은 손상을 미쳐 열전모듈의 신뢰성 저하를 가져온다. 그러므로 거칠기 효과를 부여하면서 소자에 손상을 최소화하는 습식 식각법을 개발하여 Bi-Te계 열전소자의 표면 조도를 조절하고 무전해 Ni-P 도금을 실시하였다. 그리고 열처리 유무에 따른 열전모듈의 접합강도를 측정하였으며, 제작한 열전 모듈의 접합부 및 파단부의 계면 분석하여 무전해 Ni-P도금을 위한 습식식각법(wet etching법)에 대하여 검토하였다. N-type은 질산과 구연산의 혼합수용액에, P-type은 왕수에 습식 식각처리를 해서 적당히 표면 조도를 조절한 후에 EPMA로 분석을 해본 결과 니켈 도금층과 Bi-Te 소자 간에 anchor effect가 부여 된 것을 확인했다. 습식 식각에 의해서 제조된 열전모듈의 접합강도는 종래의 알루미나 샌딩법으로 제조한 열전모듈 보다 높은 접합강도를 나타내었다.

• Journal of the Korean Chemical Society
• /
• v.30 no.1
• /
• pp.33-39
• /
• 1986

The x-values of nonstoichiometry chemical formulas, Sm$O_{1.5+x}$ and Zr$O_{2+x}$, have been measured in temperature range from 500$^{\circ}$C to 1000$^{\circ}$C under oxygen pressure of 2 ${\times}10^{-1}$ to 1 ${\times}10^{-5}$ atm by gravimetric method. The enthalpies of formation of defect in samarium sesquioxide and zirconium dioxide decrease with decreasing oxygen pressure and are all positive. The 1/n values calculated from the slopes of the plots of log x vs. log $PO_2$ increase with temperature and are positive values which mean the higher oxygen pressure dependence at higher temperature. From x-values and thermodynamic data, it is found out that the nonstoichiometric defect is fully ionized metal vacancy. The conduction mechanisms of the systems are also discussed with respect to the nonstoichiometric compositions.

• Transactions of Materials Processing
• /
• v.27 no.1
• /
• pp.5-11
• /
• 2018

Direct energy deposition (DED) technique uses a laser heat source to deposit a metal layer on a substrate. Many researchers have used the DED technique to study the hardfacing of molds and dies. The aim of this study is to obtain high surface hardness and a sound bonding between the AISI M4 deposits and a substrate utilizing a mixed powder that contains M4 and AISI P21 powders. To prevent interfacial cracks between the M4 deposits and the substrate, the mixed powder is pre-deposited onto a JIS S45C substrate, before the deposition of M4 powders. Interfacial defects occurring between the deposits and substrate and changes in the microhardness of the intermediate layer were examined. Observations of the cross-sections of deposited specimens revealed that the interfacial cracks appeared in samples with one and two mixed layers regardless of the mixture ratio. However, the crack was removed by increasing the mixture ratio and the number of intermediate layers. Meanwhile, the microhardness in the mixed layer was found to decrease with increasing ratio of P21 powder in the mixture and that in the upper region of the deposited layers was approximately 800 HV, which was attributed to various alloying elements in the M4 powder.

• Korean Chemical Engineering Research
• /
• v.50 no.3
• /
• pp.574-581
• /
• 2012

The relatively short lifetime is a major obstruction for the commercial applications of OLED. One of the reason for the short lifetime is that the organic materials are interacted with water or oxygen in the atmosphere. Protection of water or oxygen from diffusing into the organic material layers are necessary to increase the lifetime of OLED. Although encapsulation of OLED with glass or metal cans has been established, passivation methods of OLED by organic/inorganic thin films are still being developed. In this paper we have developed in-situ passivation system and thin film passivation method using PECVD by which deposition can be performed at room temperature. We have analyzed the characteristics of the passivated OLED device also. The WVTR (Water Vapor Transmission Rate) for the inorganic thin film mono-layer can be reached down to $1{\times}10^{-2}g/m^2{\cdot}day$ and improved lifetime can be obtained. Thin film passivation methods are expected to be applied to flexible display.

• Journal of the Korean Magnetics Society
• /
• v.8 no.5
• /
• pp.249-254
• /
• 1998

In relation to the application of magnetic method to the evaluation of irradiation damage (embrittlement) changes in the magnetic parameters(hysteresis loop and Barkhausen noise) and Vickers microhardness due to neutron irradiation and heat treatment were measured and compared. In the case of irradiation $(2.3{\times}10^{19}\;n/cm^2,\; E{\ge}1\;Mev,\; 288{\circ}C)$ hysteresis loop measurements show that susceptibility decreases as coercivity increase. Saturation magnetization do not show any change. Barkhausen noise amplitude and Barkhausen noise energy have decreased while Vickers microhardness has increased. For isothermally heat treated condition of irradiated specimen at 470 $^{\circ}C$ and 540 $^{\circ}C$, Barkhausen noise energy has increased while Vickers microhardness has decreased. Results of BNE and Vickers microhardness are reversed to the results on irradiated condition. All these consistent changes in magnetic parameter and Vickers microhardness measurement, which are thought to be resulted from the interaction between irradiation-induced defects and dislocation, and magnetic domain, respectively, show a possibility that magnetic measurement may be used to the evaluation of material degradation and recovery due to neutron irradiation and heat treatment, respectively, if a relevant large database in prepared.