• Title/Summary/Keyword: 그래핀 파괴

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Mode III Fracture Toughness of Single Layer Graphene Sheet Using Molecular Mechanics (분자역학을 사용한 단층 그래핀 시트의 모드 III 파괴인성)

  • Nguyen, Minh-Ky;Yum, Young-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.38 no.2
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    • pp.121-127
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    • 2014
  • An atomistic-based finite bond element model for predicting the tearing mode (mode III) fracture of a single-layer graphene sheet (SLGS) is developed. The model uses the modified Morse potential for predicting the maximum strain relationship of graphene sheets. The mode III fracture of graphene under out-of-plane shear loading is investigated with extensive molecular mechanics simulations. Molecular mechanics is used for describing the displacements of atoms in the area near a crack tip, and linear elastic fracture mechanics is used outside this area. This work shows that the molecular mechanics method can provide a reliable and yet simple method for determining not only the shear properties of SLGS but also its mode III fracture toughness in the armchair and the zigzag directions; the determined mode III fracture toughness values of SLGS are $0.86MPa{\sqrt{m}}$ and $0.93MPa{\sqrt{m}}$, respectively.

Mode II and Mixed Mode Fracture of Single Layer Graphene Sheet (단층 그래핀시트의 모드 II 및 혼합모드 파괴)

  • Nguyen, Minh-Ky;Yum, Young-Jin
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.38 no.2
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    • pp.105-113
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    • 2014
  • The mode II fracture behavior of a single-layer graphene sheet (SLGS) containing a center crack was characterized with the results of an atomistic simulation and an analytical model. The fracture of zigzag graphene models was analyzed with molecular dynamics and the mode II fracture toughness was found to be $2.04MPa{\sqrt{m}}$. The in-plane shear fracture of a cellular material was analyzed theoretically for deriving the $K_{IIc}$ of SLGS, and FEM results were obtained. Mixed-mode fracture of SLGS was studied for various mode I and mode II ratios. The mixed-mode fracture criterion was determined, and the obtained fracture envelope was in good agreement with that of another study.

단일 원자층 박막의 파괴거동

  • HwangBo, Yun;Kim, Jae-Hyeon;Lee, Seung-Mo
    • Journal of the KSME
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    • v.55 no.2
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    • pp.40-44
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    • 2015
  • 이 글에서는 얇은 두께를 지닌 박막의 파괴거동을 측정하는 방법과, 이를 이용하여 측정된 단원자층 박막인 그래핀의 파괴거동에 대해서 소개한다.

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효과적인 일함수 조절을 위한 그래핀-고분자의 적층 구조

  • Cha, Myeong-Jun;Kim, Yu-Seok;Jeong, Min-Uk;Song, U-Seok;Jeong, Dae-Seong;Lee, Su-Il;An, Gi-Seok;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.210-210
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    • 2013
  • 그래핀은 뛰어난 기계적, 화학적, 광학적, 전기적 특성을 가지고 있는 2차원 물질로, 대면적 합성법과 전사 공정을 통해 다양한 기판에서의 사용이 가능해지면서 차세대 전자 소자로 활용하기위한 활발한 연구가 이루어지고 있다. 디스플레이, 태양전지의 전극과 전계 효과 트랜지스터의 채널로 적용한 연구에서 우수한 결과들을 보이고 있다. 특히, 금속/금속 산화물 전극은 염료 감응형 태양전지와 유기 발광 다이오드 구조에서 화학적으로 불안정할 뿐 아니라 일함수가 고정되어 쇼트키 접촉이 형성되면 저항을 낮추기 어렵지만, 그래핀은 금속/금속 산화물 전극보다 화학적으로 안정하고 일함수의 조절이 가능해 옴 접촉 형성에 용이하다. 그래핀의 일함수를 조절하는 연구는 크게 공유결합과 비공유 결합을 이용한 방법이 시도된다. 공유 결합을 이용한 방법은 합성과정에서 그래핀의 구조에 내재된 결함 혹은 새로운 결함을 형성하여 다른 원소를 첨가하는 방법이다. 이러한 방법은 그래핀의 결함 영역에서 작용하기 때문에 그래핀 전자 구조의 높은 수준 조절을 위해선 그래핀 구조의 파괴가 동반된다. 반면, 비공유 결합을 이용한 방법은 전하 이동 도핑 효과를 이용해 그래핀의 전자 구조를 제어하는 방법으로, 금속/금속산화물/기능기와 그래핀의 적층으로 복합 구조를 형성하는 방법이다. 금속/금속 산화물과의 복합구조는 안정적인 p-형 도핑이 보고되었지만, n-형 도핑은 대기중의 수분, 산소 그리고 기판과의 상호작용에 의해 대기중에서 불안정해 추가적인 피막공정이 요구된다. 기능기를 이용한 적층 구조는 그래핀과 기판사이의 상호작용 혹은 그래핀 전자 구조를 다양한 기능기를 이용해 제어하는 것으로, 이극성을 가진 자기정렬 단일층(self-assembled monolayers)이 대표적인 방법이다. 공간기(spacer)의 길이나 말단기(end group)의 종류로 p-형과 n-형의 도핑 수준을 제어할 수 있지만, 흡착기(chemisorbing groups)의 반응성이 기판의 화학적, 물리적 표면상태에 의존하기때문에 기판 선택이 제약되며 전처리 공정이 요구될 수 있는 한계가 있다. 본 연구에서는 다양한 기판에 적용가능한 용액 공정을 이용해 그래핀과 고분자를 적층하였고, 안정적이고 효과적으로 일함수를 낮추는 구조를 확인하였다.

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Measurements of the Adhesion Energy of CVD-grown Monolayer Graphene on Dielectric Substrates (단일층 CVD 그래핀과 유전체 사이의 접착에너지 측정)

  • Bong Hyun Seo;Yonas Tsegaye Megra;Ji Won Suk
    • Composites Research
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    • v.36 no.5
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    • pp.377-382
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    • 2023
  • To enhance the performance of graphene-based devices, it is of great importance to better understand the interfacial interaction of graphene with its underlying substrates. In this study, the adhesion energy of monolayer graphene placed on dielectric substrates was characterized using mode I fracture tests. Large-area monolayer graphene was synthesized on copper foil using chemical vapor deposition (CVD) with methane and hydrogen. The synthesized graphene was placed on target dielectric substrates using polymer-assisted wet transfer technique. The monolayer graphene placed on a substrate was mechanically delaminated from the dielectric substrate by mode I fracture tests using double cantilever beam configuration. The obtained force-displacement curves were analyzed to estimate the adhesion energies, showing 1.13 ± 0.12 J/m2 for silicon dioxide and 2.90 ± 0.08 J/m2 for silicon nitride. This work provides the quantitative measurement of the interfacial interactions of CVD-grown graphene with dielectric substrates.

저밀도 유도결합플라즈마 처리를 이용한 그래핀 클리닝

  • Im, Yeong-Dae;Lee, Dae-Yeong;Sim, Jeon-Ja;Ra, Chang-Ho;Yu, Won-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.220-220
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    • 2012
  • 저밀도 알곤 유도결합플라즈마(Ar-ICP) 를 적용한 그래핀 클리닝 연구를 보고한다. 알곤 축전결합플라즈마(Ar-CCP)는 높은 이온포격에너지 (수백 eV) 로 인하여 그래핀의 C-C $sp_2$ bonding을 쉽게 파괴하고 defect을 형성시킨다. 그러나 저밀도 ($n_i$ < $5{\times}10^8cm^{-3}$) Ar-ICP 에 노출된 그래핀은 낮은 이온포격에너지, 이온밀도로 인하여 defect 이 형성되지 않고 residue 제거가 가능하였다. Graphene 이 집적된 back-gated field effect transistor (G-FET) 가 저밀도 Ar-ICP 에 노출될 경우 resist residue 제거로 인하여 $V_{dirac}$ 이 0 V 방향으로 이동하고 mobility 가 증가하는 것을 확인하였다.

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A Study on the Electrical Resistivity of Graphene Added Carbon Black Composite Electrode with Tensile Strain (인장변형에 따른 그래핀복합 카본블랙전극의 저항변화연구)

  • Lee, T.W.;Lee, H.S.;Park, H.H.
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.1
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    • pp.55-61
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    • 2015
  • Stretchable electrode materials are focused to apply to flexible device such as e-skin and wearable computer. Used as a flexible electrode, increase in electrical resistance should be minimalized under physical strain as bend, stretch and twist. Carbon black is one of candidates, for it has many advantages of low cost, simple processing, and especially reduction in resistivity with stretching. However electrical conductivity of carbon black is relatively low to be used for electrodes. Instead graphene is one of the promising electronic materials which have great electrical conductivity and flexibility. So it is expected that graphene added carbon black may be proper to be used for stretchable electrode. In this study, under stretching electrical property of graphene added carbon black composite electrode was investigated. Mechanical stretching induced cracks in electrode which means breakage of conductive path. However stretching induced aligned graphene enhanced connectivity of carbon fillers and maintained conductive network. Above all, electronic structure of carbon electrode was changed to conduct electrons effectively under stretching by adding graphene. In conclusion, an addition of graphene gives potential of carbon black composite as a stretchable electrode.

Physical Properties of Functionalized Graphene Sheet/Poly(ethylene-co-vinyl acetate) Composites (관능화 그래핀 쉬트/에틸렌-비닐아세테이트 공중합체 복합재료의 물성)

  • Lee, Ki Suk;Kim, Jeong Ho;Jeong, Han Mo
    • Polymer(Korea)
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    • v.38 no.3
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    • pp.307-313
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    • 2014
  • The physical properties of functionalized graphene sheet (FGS)/poly(ethylene-co-vinyl acetate) (EVA) was examined with various kinds of EVA, having vinyl acetate (VA) contents in the range of 0 to 40 wt%. The compatibility between FGS and EVA was enhanced as the polar VA content of EVA increased. Thus, the dispersion of FGS in EVA became finer, and the decrease of surface resistivity and the increase of tensile modulus by the added FGS became more effective when the VA content of EVA was high. When the VA content was low, the elongation at break was reduced drastically by added FGS due to the poor adhesion of FGS/EVA interface. The crystallization of EVA was generally retarded by the interaction with dispersed FGS. However, when both the VA content of EVA and the added amount of FGS were low, the crystallization of EVA was enhanced, probably due to the predominant nucleating effect by FGS.

Recent Progress in Qantum Dots Containing Thin Film Composite Membrane for Water Purification (양자점이 합체된 복합 박막을 이용한 정수의 최근 발전)

  • Park, Shinyoung;Patel, Rajkumar
    • Membrane Journal
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    • v.30 no.5
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    • pp.293-306
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    • 2020
  • Increasing harmful effects of climate change, such as its effect on water scarcity, has led to a focus on developing effective water purification methods to obtain pure water. Additionally, rising levels of water pollution is increasing levels of environmental degradation, calling for sources of water treatment to remove contaminants. To purify water, osmotic processes across a semipermeable membrane can take place, and recent studies are showing that incorporating nanoparticles, including carbon quantum dots (CQDs), graphene carbon dots (GQDs), and graphene oxide quantum dots (GOQDs) are making thin film composite (TFC) membranes more effective by increasing water flux while maintaining similar levels of salt rejection, increasing the hydrophilicity of the membrane surface, showing bactericidal properties, exhibiting antifouling properties to prevent accumulation of bacteria or other microorganisms from reducing the effectiveness of the membrane, and more. In the review, the synthesis process, applications, functionality, properties, and the role of several types of quantum dots are discussed in the composite membrane for water purification.

Effects of Graphene Oxide Addition on the Electromigration Characteristics of Sn-3.0Ag-0.5Cu Pb-free Solder Joints (Graphene Oxide 첨가에 따른 Sn-3.0Ag-0.5Cu 무연솔더 접합부의 Electromigration 특성 분석)

  • Son, Kirak;Kim, Gahui;Ko, Yong-Ho;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.3
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    • pp.81-88
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    • 2019
  • In this study, the effects of graphene oxide (GO) addition on electromigration (EM) lifetime of Sn-3.0Ag-0.5Cu Pb-free solder joint between a ball grid array (BGA) package and printed circuit board (PCB) were investigated. After as-bonded, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) was formed at the interface of package side finished with electroplated Ni/Au, while $Cu_6Sn_5$ IMC was formed at the interface of OSP-treated PCB side. Mean time to failure of solder joint without GO solder joint under $130^{\circ}C$ with a current density of $1.0{\times}10^3A/cm^2$ was 189.9 hrs and that with GO was 367.1 hrs. EM open failure was occurred at the interface of PCB side with smaller pad diameter than that of package side due to Cu consumption by electrons flow. Meanwhile, we observed that the added GO was distributed at the interface between $Cu_6Sn_5$ IMC and solder. Therefore, we assumed that EM reliability of solder joint with GO was superior to that of without GO by suppressing the Cu diffusion at current crowding regions.