• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.126-136
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• 2018

A steel-plate concrete composite beam is composed of a steel plate, concrete and shear connector to combine inhomogeneous two materials. The steel plate is assembled by welding an existing composite beam. In this study, new steel-plate concrete composite beam, called a SPC Beam, was developed to reduce the shear connector and improve the workability. The SPC Beam was composed of folding steel plates and concrete, without a shear connector. The folding steel plate was assembled using high strength bolt instead of welding. To improve the workability in field construction, a hat-shaped Cap was attached to the junction with a slab. Monotonic load testing under two points was conducted under displacement control mode. The flexural strength of the specimen for positive moment and negative moment was calculated using the plastic stress distribution method. The test results showed that the flexural strength of the new SPC Beam had 80% of the strength of a complete composite beam. In addition, increasing the composite ratio was possible through clearance controls of the cap. In this study, the performance of the SPC Beam was verified through additional experiments and analyses with the cross-sectional shape and cap as variables, because the representative shape in the positive negative moment region is targeted.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.12-12
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• 2009

터빈에서 핵심부품인 로터는 블레이드를 원심 운동시키는 대형 단조강이며, 고압의 증기 조건에서 고속회전하며 고온에서 운전과 저온에서 과속시험 동안 높은 원심력을 받는다. 또한 기동/정지 천이 동안 열응력을 받기 때문에, 이러한 운전조건에 부합되는 소재로서는 높은 Creep 강도 및 피로강도를 가지는 CrMoV type의 강종이 사용되어져 왔다. 발전소의 대용량화 및 고온화에 따라 종래의 증기조건에서 사용되어져 왔던 1%CrMoV강은 내산화성 및 내부식성이 문제가 되어 더 이상 사용이 불가하며, 고온/고압하에서도 우수한 소재 특성을 가지는 12%Cr강의 사용이 필수적이다. 그러나 12%Cr강으로 제작되는 로타는 Cr 양이 높기 때문에 저널부에 Galling 또는 Scuffing 이라 불리는 부적절한 마모현상과 사용 중 소착이 발생하기 쉬운 단점이 있기 때문에, 저널부에 Cr 함유량 2~3% 이하의 저합금강을 오버레이 용접하여 육성하는 일체형 가공구조의 로타 저널부가 주목되어 왔다. 따라서 본 연구에서는 Large scale 로타가 용접 도중 급열 및 급냉이 되지 않으면서 균일한 온도로 일정 시간 유지할 수 있는 열관리 장치 개발, 최적 오버레이 용접조건 선정 및 용접부 건전성 시험 평가를 통하여 12%Cr 로타 저널부의 최적 오버레이 용접공정을 확립하고자 하였다. 용접 열관리 장치는 전기저항 가열방식을 적용하고 있으며 용접이 최종 완료되기 전까지 로타 제품 전체는 $93^{\circ}C$이상의 온도로 유지 되어져야 하며, 규정 용접후열처리 온도는 $650^{\circ}C{\pm}14^{\circ}C$ 이다. 또한 로타 오버레이 용접은 모재 Set up $\Rightarrow$ 용접예열 $\Rightarrow$ GTA용접 $\Rightarrow$ SA용접 $\Rightarrow$ 용접후열(Post heating) $\Rightarrow$ 용접후열처리(PWHT) $\Rightarrow$ 정삭가공 $\Rightarrow$ NDE(UT) 순으로 수행 되어진다 실제 로타의 1/3 Scale로 시험편을 제작하여, 오버레이 mockup 시험을 수행한 후 화학성분, 경도 분포, 인장강도, 충격인성 및 굽힘시험을 수행한 결과, 오버레이 용접에서 요구되어지는 용접 물성값을 만족하는 것으로 확인되었다. 또한 균열 등의 선형 결함이나 기공, 슬라그 혼입과 같은 결함은 관찰되지 않았으며, 용접 시 아크의 안정성과 슬라그의 박리성은 양호하였으며 비드의 외관도 미려하여 용접 작업성도 양호하였다.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.874-880
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• 2003

The effect of h-BN content on microstructure, mechanical properties, and machinability of AlN-BN based machinable ceramics were investigated. The relative density of sintered compact decreased with increasing h-BN content. The four-point flexural strength also decreased from 238 MPa of monolith up to 182 MPa by the addition of 30 vol％ h-BN. Both low Young's modulus and residual tensile stress, formed by the thermal expansion coefficient difference between AIN and h-BN, might cause the strength drop in AlN-BN composite. The crack deflection, and pull-out phenomena increased by the plate-like h-BN. However, the fracture toughness decreased with h-BN content. The second phases, consisted of YAG and ${\gamma}$-Al$_2$O$_3$, were formed by the reaction between Al$_2$O$_3$ and Y$_2$O$_3$. During end-milling process, feed and thrust forces measured for AlN-(10～30) vol％ BN composites decreased with increasing h-BN particles, showing excellent machinability. Also, irrespective of h-BN content, relatively good surfaces with roughness less than 0.5 m (Ra) could be achieved within short lapping time.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.29-37
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• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.212-217
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• 2022

Large thermal stress due to the difference between silicon carbide and graphite's coefficients of thermal expansion could be formed during crystal growing process of silicon carbide (SiC) at high temperature. The large thermal stress could separate the SiC seed crystals from graphite components, which bring about the drop of the seed crystal during crystal growth. However, the bonding properties of SiC seed crystal module has hardly reported so far. In this study, SiC and graphite were bonded using 3 types of bonding agents and a three-point bending tests using a mixed-mode flexure test were conducted for the bonded samples to evaluate the bonding characteristics between SiC and graphite. Raman spectroscopy, X-ray Photoelectron Spectroscopy, and X-ray Computed Tomography were used to analyze the bonding characteristics and the microstructures of the SiC-graphite interfaces bonded with the bonding agents. As results, an excellent bonding agent was chosen to fabricate SiC seed crystal module with 50 mm in diameter. An SiC single crystal with 50 mm in diameter was successfully grown without falling out during top seeded solution growth of SiC at high temperature.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.29-34
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• 2024

The heating element utilizing the Joule heating generated when current flows through a conductor is widely researched and developed for various industrial applications such as moisture removal in automotive windshield, high-speed train windows, and solar panels. Recently, research utilizing heating elements with various nanostructures has been actively conducted to develop flexible heating elements capable of maintaining stable heating even under mechanical deformation conditions. In this study, flexible polyurethane possessing excellent flexibility was selected as the substrate, and silver (Ag) thin films with low electrical resistivity (1.6 μΩ-cm) were fabricated as the heating layer using magnetron sputtering. The 2D heating structure of the Ag thin films demonstrated excellent heating reproducibility, reaching 95% of the target temperature within 20 seconds. Furthermore, excellent heating characteristics were maintained even under mechanically deforming environments, exhibiting outstanding flexibility with less than a 3% increase in electrical resistance observed in repetitive bending tests (10,000 cycles, based on a curvature radius of 5 mm). This demonstrates that polyurethane/Ag planar heating structure bears promising potential as a flexible/wearable heating element for curved-shaped appliances and objects subjected to diverse stresses such as human body parts.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.1-10
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• 2018

Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.