• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1816-1822
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• 2003

We propose a novel structure of wavelength selective optical add/drop filter comprising two tap couplers and a fiber Bragg grating. The device has unique features including a simpler structure and a lower cost implementation as compared with existing device for the same operation. The filter performance has been measured and analyzed, experimentally. The implemented prototype filter shows good performance with no­crosstalk power penalty in a 155Mbps per channel wavelength­division­multiplexing transmission system but suffers from a relatively high loss of 3.5㏈ and 21㏈ for transmitted and dropped channel, respectively. While the dropped channel extinction ratio was more than 15㏈, the transmitted channel extinction ratio was more than 26㏈.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.578-582
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• 2003

We propose a novel structure of wavelength selective optical add/drop module comprising two tap couplers and a fiber Bragg grating. The device has unique features including a simpler structure and a lower cost of implementation as compared with existing devices for the same operation. The module performance has been measured and analyzed experimentally. The implemented prototype module shows good performance with no-crosstalk power penalty in a 155 Mbps per channel wavelength-division-multiplexing transmission system but suffers from a relatively high loss of 3.5 ㏈ and 21 ㏈ for transmitted and dropped channels, respectively. While the dropped channel extinction ratio was more than 25 ㏈, the transmitted channel extinction ratio was more than 35 ㏈.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.